| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 02/03/1999 | CN1207206A Wavelength conversion pouring material, its use and manufacturing method |
| 02/03/1999 | CN1207012A Electronic elements and equipment |
| 02/02/1999 | US5866918 Semiconductor light emitting device |
| 02/02/1999 | US5866440 Method of making compound semiconductor light emitting device having evaporation preventing layer Alx Ga.sub.(1-x) N |
| 02/02/1999 | US5866439 Method of fabricating an end face light emitting type light-emitting diode and a light-emitting diode array device |
| 02/02/1999 | US5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor |
| 02/02/1999 | US5865529 Light emitting diode lamp having a spherical radiating pattern |
| 02/02/1999 | CA2105069C Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 01/28/1999 | WO1998047123A3 Electrical device |
| 01/28/1999 | DE19832852A1 Semiconductor light emitting device |
| 01/28/1999 | DE19727632A1 Optical data transmission component |
| 01/27/1999 | EP0893834A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 01/27/1999 | CN1206484A True color flat panel display using led dot matrix and led dot matrix drive method and apparatus |
| 01/26/1999 | US5864573 Gaas, gap, inas or inp |
| 01/26/1999 | US5864171 Semiconductor optoelectric device and method of manufacturing the same |
| 01/26/1999 | US5863811 Lattice relaxation in the single crystal buffer layer allows single crystal gallium-indium- or aluminum-gallium-nitride layer to crystallize with high quality on the buffer layer regardless lattice constant difference between the layers |
| 01/26/1999 | US5863810 Method for encapsulating an integrated circuit having a window |
| 01/21/1999 | WO1999003156A1 II-VI SEMICONDUCTOR COMPONENT WITH AT LEAST ONE JUNCTION BETWEEN AN Se-CONTAINING LAYER AND A BeTe CONTAINING LAYER AND METHOD FOR PRODUCING SAID JUNCTION |
| 01/21/1999 | WO1999003144A1 Method for producing a ii-vi semi-conducting component |
| 01/21/1999 | WO1999002026A2 Fluorescent dye added to epoxy of light emitting diode lens |
| 01/21/1999 | DE19831585A1 Semiconductor light emitter with LED chip |
| 01/20/1999 | EP0892446A2 Method of manufacturing an aggregate of semiconductor micro-needles and method of manufacturing a semiconductor device comprising an aggregate of semiconductor micro-needles |
| 01/20/1999 | EP0892445A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 01/20/1999 | EP0892444A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 01/20/1999 | EP0892443A2 Electrode of n-type nitride semiconductor, semiconductor device having the electrode, and method of fabricating the same |
| 01/20/1999 | EP0891639A1 Semiconductor integrated circuit |
| 01/20/1999 | EP0746719A4 Electronic wide angle lighting device |
| 01/20/1999 | EP0714558B1 Radiation-emitting semiconductor index-guided diode |
| 01/20/1999 | EP0714556B1 Light-emitting diode comprising an active layer of 2,5-substituted poly(p-phenylene vinylene) |
| 01/20/1999 | CN1205556A Gan group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
| 01/19/1999 | US5862167 Light-emitting semiconductor device using gallium nitride compound |
| 01/19/1999 | US5861636 Surface emitting visible light emiting diode having ring-shaped electrode |
| 01/14/1999 | WO1999001594A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 01/14/1999 | WO1999001593A2 Elimination of defects in epitaxial films |
| 01/14/1999 | DE19830838A1 Semiconductor light emitting diode chip |
| 01/14/1999 | DE19729396A1 Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes An electrical contact for a II-VI semiconductor device and method of manufacturing the electrical contact |
| 01/14/1999 | DE19729186A1 Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements A method of manufacturing a II-VI semiconductor device |
| 01/13/1999 | EP0890997A2 III-nitride optoelectronic semiconductor devices |
| 01/13/1999 | EP0890996A2 Transparent coating member for light-emitting diodes and fluorescent color light source |
| 01/13/1999 | EP0890857A2 Structure for securing optical device and an optical fiber |
| 01/12/1999 | US5859942 Optical coupling device |
| 01/12/1999 | US5858862 Process for producing quantum fine wire |
| 01/12/1999 | US5858559 Selectively irratiating certain regions |
| 01/12/1999 | US5857767 Thermal management system for L.E.D. arrays |
| 01/07/1999 | WO1999000853A1 METHOD OF DOPING GaN LAYERS |
| 01/07/1999 | WO1999000852A1 Reflection type light emitting diode |
| 01/07/1999 | WO1999000851A1 Beam-emitting opto-electronic component |
| 01/07/1999 | EP0889435A2 Light emitting element array chip, light emitting element array drive IC and print head |
| 01/07/1999 | DE19729919A1 Pure green emitting gallium phosphide-based LED structure |
| 01/07/1999 | DE19727233A1 Strahlungsemittierendes optoelektronisches Bauelement The radiation optoelectronic component |
| 01/05/1999 | US5856682 Semiconductor light-emitting device and method for producing the same |
| 01/05/1999 | US5856208 Epitaxial wafer and its fabrication method |
| 01/05/1999 | US5855924 Closed-mold for LED alphanumeric displays |
| 12/30/1998 | EP0887867A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 12/30/1998 | EP0887866A2 Semiconductor device comprising an aggregate of semiconductor micro-needles |
| 12/30/1998 | EP0887865A1 Optical module with an optoelectronic semiconductor device |
| 12/30/1998 | EP0887668A1 Bragg reflector in a semiconductor and fabrication method |
| 12/30/1998 | CN1203698A Method and device for chip assembly |
| 12/29/1998 | US5854089 Semiconductor device by selectively controlling growth of an epitaxial layer without a mask |
| 12/29/1998 | US5854087 Method of manufacturing an optical semiconductor device |
| 12/29/1998 | US5853960 Method for producing a micro optical semiconductor lens |
| 12/24/1998 | DE19817368A1 LED with high brightness |
| 12/23/1998 | EP0886329A2 Electroluminescence device, electroluminescence apparatus, and production methods thereof |
| 12/23/1998 | EP0886326A2 Separate hole injection structure for improved reliability light emitting semiconductor devices |
| 12/23/1998 | EP0885451A1 Transparent contacts for organic devices |
| 12/22/1998 | US5852517 Optical send-receive module |
| 12/22/1998 | US5852346 Forming luminescent silicon material and electro-luminescent device containing that material |
| 12/22/1998 | US5851905 Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows |
| 12/22/1998 | US5851904 Method of manufacturing microcrystalline layers and their utilization |
| 12/22/1998 | US5851850 Method for fabricating a gap type semiconductor substrate of red light emitting devices |
| 12/22/1998 | US5851449 Method for manufacturing a surface-mounted type optical semiconductor device |
| 12/22/1998 | US5851063 General illumination system |
| 12/22/1998 | CA2124544C Method and apparatus of mounting a lens |
| 12/17/1998 | WO1998057402A1 Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| 12/17/1998 | CA2286838A1 Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| 12/16/1998 | EP0884786A2 Multiple display apparatus |
| 12/16/1998 | EP0884782A1 Integrated electro-optical package and method of fabrication |
| 12/16/1998 | EP0786150B1 Method for producing high efficiency light-emitting diodes |
| 12/16/1998 | EP0775180B1 Organic electroluminescent device |
| 12/16/1998 | CN1202244A Infrared optical system |
| 12/15/1998 | US5848839 LED sealing lens cap and retainer |
| 12/15/1998 | US5848837 Integrally formed linear light strip with light emitting diodes |
| 12/15/1998 | CA2128068C Packaging of high power semiconductor lasers |
| 12/10/1998 | WO1998056046A1 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
| 12/10/1998 | DE19745723A1 Light emitting semiconductor device especially LED |
| 12/09/1998 | EP0883195A1 Head tracking system comprising LED with fluorescent coating |
| 12/09/1998 | EP0883003A2 Optical semiconductor device and lead frame used in it |
| 12/09/1998 | CN2300189Y High brightness luminescent diode |
| 12/08/1998 | US5847507 Fluorescent dye added to epoxy of light emitting diode lens |
| 12/08/1998 | US5847506 Organic light emitting device and substrate plate for it |
| 12/08/1998 | US5846844 Method for producing group III nitride compound semiconductor substrates using ZnO release layers |
| 12/03/1998 | WO1998054930A2 Uv/blue led-phosphor device with enhanced light output |
| 12/03/1998 | WO1998054929A2 Uv/blue led-phosphor device with efficient conversion of uv/blue light to visible light |
| 12/03/1998 | WO1998054764A1 Method for producing a light-emitting component |
| 12/03/1998 | DE19823914A1 Light emitting diode array |
| 12/02/1998 | EP0881691A2 Quantum dot device |
| 12/02/1998 | EP0881667A2 A method for manufacturing compound semiconductor epitaxial wafer |
| 12/02/1998 | EP0881666A2 P-type nitrogen compound semiconductor and method of manufacturing same |
| 12/01/1998 | US5845031 Optical module having an improved heat dissipation and reduced mechanical distortion |
| 12/01/1998 | US5845024 Optical fiber with lens and method of manufacturing the same |