| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 01/11/2001 | DE19932051A1 Fahrzeugleuchte Vehicle light |
| 01/11/2001 | DE19931689A1 Planar LED assembly on thermally-conductive board, increases cooling, component packing density and life, whilst permitting active device integration to form display- or illumination panel in or on e.g. vehicle |
| 01/11/2001 | DE19928576A1 Surface mount LED component with improved heat removal has leads fed towards mounting plane on outer surface of opposing sides, connected mounting surfaces partly in plane |
| 01/11/2001 | DE19926958A1 Lichtemissions-Halbleiterdiode auf der Basis von Ga (In, AL) P-Verbindungen mit ZnO-Fensterschicht The light-emitting semiconductor diode based on Ga (In, Al) P compounds with ZnO window layer |
| 01/11/2001 | DE19918859A1 Elektro-optisches Wandlerbauteil und Verfahren zu seiner Herstellung Electro-optical transducer element and process for its preparation |
| 01/11/2001 | DE10027199A1 Semiconductor light emitting device e.g. LED has transparent coating material that includes polymetalloxane or ceramic |
| 01/11/2001 | CA2341657A1 Drive circuit for leds, and an associated operating method |
| 01/10/2001 | EP1067643A1 Optical semiconductor device with a wavelength tunable resonant cavity, and usage in light intensity modulation |
| 01/10/2001 | EP1067594A2 A semiconductor device |
| 01/10/2001 | EP1067332A2 Vehicle lamp |
| 01/10/2001 | CN1279733A Method for producing a gallium nitride epitaxial layer |
| 01/10/2001 | CN1060597C Process and device for supplying an electric consumer with regulated electric voltage or current |
| 01/09/2001 | US6172701 Light emitting element array chip, light emitting element array drive IC and print head |
| 01/09/2001 | US6172459 A multilayer comprising a cathode buffer layer including porphyrinic compounds as a protection layer against damage of the light-emitting structure during high energy deposition of a cathode over the buffer layer |
| 01/09/2001 | US6172414 Apparatus and method for snap-on thermo-compression bonding |
| 01/09/2001 | US6172382 Nitride semiconductor light-emitting and light-receiving devices |
| 01/09/2001 | US6171878 Method of fabricating semiconductor laser using selective growth |
| 01/09/2001 | US6171877 Optical transmitter package assembly and methods of manufacture |
| 01/09/2001 | US6171394 Method for manufacturing compound semiconductor epitaxial wafer |
| 01/09/2001 | US6171331 Method of treating of pathological tissues and device to effect the same |
| 01/09/2001 | US6170963 Light source |
| 01/08/2001 | CA2313442A1 Optoelectric component group |
| 01/04/2001 | WO2001001497A1 Hermetic chip-scale package for photonic devices |
| 01/04/2001 | WO2001001118A1 Illumination module |
| 01/04/2001 | WO2000058999A3 Semiconductor structures having a strain compensated layer and method of fabrication |
| 01/04/2001 | WO2000057492B1 Luminescent diode device |
| 01/04/2001 | DE19930174A1 Ansteuerschaltung für LED und zugehöriges Betriebsverfahren A drive circuit for LED and operating method thereof |
| 01/04/2001 | DE19929591A1 Process for producing an epitaxial gallium nitride layer on a substrate comprises applying a precursor compound containing gallium carbodiimide on the substrate, and converting into crystalline gallium nitride by pyrolysis |
| 01/04/2001 | CA2378211A1 Hermetic chip-scale package for photonic devices |
| 01/03/2001 | EP1065734A2 Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof. |
| 01/03/2001 | EP1065733A2 Light emitting diode and manufacturing method thereof |
| 01/03/2001 | EP1065705A2 Group III nitride compound semiconductor device and producing method therefore |
| 01/03/2001 | EP1065482A1 Light source of selectable color and method of providing colored illumination |
| 01/03/2001 | CN2413390Y Light-emitting diode device |
| 01/03/2001 | CN2413389Y Side light-emitting diode device |
| 01/03/2001 | CN2413388Y DH-Ga1 -xAlxAsLED rheotaxial wafer |
| 01/03/2001 | CN1278949A Group III nitride photonic devices on silicon carbice substrates with conductie buffer interlayer structure |
| 01/03/2001 | CN1278604A Optical model block, mfg. method thereof and optical transfer apparatus |
| 01/02/2001 | US6169298 A double heterostructure or a multi-layer quantum well structure on a substrate having an electrically conductive oxide layer (aluminum zinc oxide) as a highly transparent window layer; eliminates the crowding effect |
| 01/02/2001 | US6169297 Metal thin film with ohmic contact for light emit diodes |
| 01/02/2001 | US6169296 Light-emitting diode device |
| 01/02/2001 | US6169294 Inverted light emitting diode |
| 01/02/2001 | US6168964 Method of fabricating a semiconductor light emitting device with etched end surface |
| 01/02/2001 | US6168962 Method of manufacturing a semiconductor light emitting device |
| 01/02/2001 | US6168731 Strontium gallium sulfide |
| 01/02/2001 | US6168296 Lighting unit for reading marks |
| 12/28/2000 | WO2000079659A1 Encapsulated optoelectronic devices with controlled properties |
| 12/28/2000 | WO2000079605A1 Light emitting diode |
| 12/28/2000 | WO2000079599A1 InGaAsN/GaAs QUANTUM WELL DEVICES |
| 12/28/2000 | WO2000079033A1 Epitaxial films |
| 12/28/2000 | WO2000070691B1 Light emitting diode with improved efficiency |
| 12/28/2000 | DE10016503A1 Light-emitting structure used as a light-emitting diode chip comprises a light-emitting diode for emitting light, a reflecting layer, a solder layer on one side of the reflecting |
| 12/27/2000 | EP1063711A1 Turntable device and manufacturing method thereof |
| 12/27/2000 | EP1063710A1 Semiconductor light emitting device |
| 12/27/2000 | CN1278111A Epitaxial chip used for infrared light-emitting component, and light-emitting component using said chip |
| 12/26/2000 | US6165874 Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
| 12/26/2000 | US6165813 Replacing semiconductor chips in a full-width chip array |
| 12/26/2000 | US6165812 Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor |
| 12/26/2000 | US6165809 Suppressing both the total reflection of the emitted light and the ineffective emission under the under the front electrode; top substrate surface specifically inclined; form a light emmitting layer covered by a current blocking layer |
| 12/26/2000 | US6165631 Diode-addressed color display with lanthanoid phosphors |
| 12/21/2000 | WO2000077863A1 Ga(In, Al) P COMPOUND-BASED LIGHT-EMITTING SEMICONDUCTOR DIODE WITH A ZnO WINDOW LAYER |
| 12/21/2000 | WO2000077861A1 Stacked wavelength-selective opto-electronic device |
| 12/21/2000 | DE10017758A1 Verfahren zum Bilden von transparenten Kontakten an einer p-Typ-GaN-Schicht A method of forming transparent contacts on a p-type GaN layer |
| 12/21/2000 | DE10017757A1 Aluminum-gallium-indium-nitride light-emitting diode for use as, e.g. illuminators, comprises a multi-layered epitaxial structure |
| 12/20/2000 | EP1061590A1 Light emitting diode and its manufacturing method |
| 12/20/2000 | EP1061588A2 Photo-conductive relay and method of making same |
| 12/20/2000 | EP1061564A2 MBE growth of group III-nitride semiconductor layers |
| 12/20/2000 | EP1061391A2 Optical module and method of manufacturing the same, and optical transmission device |
| 12/20/2000 | EP1061083A1 Adduct of a dialkylgalliumazide with hydrazine for MOCVD of GaN |
| 12/20/2000 | EP1060340A1 Omnidirectional lighting device |
| 12/20/2000 | CN2411577Y Packaged cooling device for light-emitting diode |
| 12/20/2000 | CN1277461A Unipolar light emitting device based on superlattice III-nitride semiconductor |
| 12/20/2000 | CN1059755C Buffer structure between silicon carbide and gallium nitride and semiconductor obtained from the same |
| 12/19/2000 | US6163557 Mesas provide reduced area surfaces for epitaxially growing group iii-v nitride films, to reduce thermal film stresses in the films to reduce cracking |
| 12/19/2000 | US6163038 White light-emitting diode and method of manufacturing the same |
| 12/19/2000 | US6163037 Double heterojunction light emitting device possessing a dopant gradient across the N-type layer |
| 12/19/2000 | US6162656 Manufacturing method of light emitting device |
| 12/19/2000 | US6162653 Lead frame attachment for optoelectronic device |
| 12/19/2000 | US6161910 LED reading light |
| 12/14/2000 | WO2000076010A1 Multiple wavelength light emitting device, electronic apparatus, and interference mirror |
| 12/14/2000 | WO2000076005A1 Photon recycling semiconductor multi-wavelength light-emitting diodes |
| 12/14/2000 | WO2000076004A1 Nitride semiconductor device |
| 12/14/2000 | WO2000076003A1 Edge-emitting light-emitting device having improved external luminous efficiency and self-scanning light-emitting device array comprising the same |
| 12/14/2000 | CA2696270A1 Nitride semiconductor device |
| 12/14/2000 | CA2339665A1 End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same |
| 12/13/2000 | EP1059678A2 Hybrid integrated circuit device |
| 12/13/2000 | EP1059677A2 Method for manufacturing a nitride semiconductor device and device manufactured by the method |
| 12/13/2000 | EP1059668A2 Hybrid integrated circuit device |
| 12/13/2000 | EP1059667A2 Hybrid integrated circuit device |
| 12/13/2000 | EP1059171A1 Rod lens array and printer head and optical printer using the same |
| 12/13/2000 | EP1058946A1 Method for forming cavities in a semiconductor substrate by implanting atoms |
| 12/13/2000 | CN1276917A Optical irradation device |
| 12/12/2000 | US6160833 Surface emitting laser containing a sapphire substrate, first gallium nitride layer on the substrate having first, second, third regions, a first refector of dielectric material on first region, second reflector on third region |
| 12/12/2000 | US6160273 Diode pumped solid state edge emitting light source |
| 12/12/2000 | US6159764 Varied-thickness heat sink for integrated circuit (IC) packages and method of fabricating IC packages |
| 12/07/2000 | WO2000034989A9 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
| 12/06/2000 | EP1058226A2 Display lamp |
| 12/06/2000 | EP1056993A1 Led luminaire |
| 12/06/2000 | CN1275814A Packaging method for organic electroluminescence device |
| 12/06/2000 | CN1059290C Method for assembly integrated circuit on a shared substrate |