| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
|---|
| 07/27/1999 | US5927845 Integrally formed linear light strip with light emitting diodes |
| 07/21/1999 | EP0930600A1 Optical element comprising LED and two lenses for the generation of pointlike light sources for traffic signs and display panels |
| 07/20/1999 | US5926726 In-situ acceptor activation in group III-v nitride compound semiconductors |
| 07/20/1999 | US5925898 Optoelectronic transducer and production methods |
| 07/20/1999 | US5925897 Optoelectronic semiconductor diodes and devices comprising same |
| 07/20/1999 | US5925896 Surface-emitting semiconductor optical device |
| 07/20/1999 | US5924785 Light source arrangement |
| 07/19/1999 | CA2259750A1 Optical element for traffic signs, display panels or the like |
| 07/15/1999 | DE19860347A1 Light emitting nitride semiconductor element, especially LED |
| 07/14/1999 | EP0929109A1 Method for manufacturing a semiconductor light emitting device |
| 07/14/1999 | CN1223009A Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device |
| 07/14/1999 | CN1222770A Nitride semiconductor light-emitting device and manufacturing method of the same |
| 07/14/1999 | CN1222769A Efficient LED and its making method |
| 07/14/1999 | CN1222719A Drive apparatus and method of light emission element array |
| 07/13/1999 | US5923951 Method of making a flip-chip bonded GaAs-based opto-electronic device |
| 07/13/1999 | US5923950 Growing aluminum nitride buffer layer on silicon carbide substrate; growing aluminum gallium indium nitride single crystal layer on aluminum nitride layer |
| 07/13/1999 | US5923946 Subjecting a group iii nitride epitaxial layer on a silicon carbide substrate to a stress that sufficiently increases the number of dislocations in the epitaxial layer to make the epitaxial layer subject to attack and dissolution in a mineral |
| 07/13/1999 | US5923691 Laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency |
| 07/13/1999 | US5923054 Light emitting diode with tilted plane orientation |
| 07/13/1999 | US5923053 Light-emitting diode having a curved side surface for coupling out light |
| 07/13/1999 | US5923052 Multilayer |
| 07/13/1999 | US5923045 Semiconductor photocathode and semiconductor photocathode apparatus using the same |
| 07/08/1999 | WO1999034421A1 Process for producing a porous layer by an electrochemical etching process |
| 07/08/1999 | CA2315674A1 Process for producing a porous layer by an electrochemical etching process |
| 07/07/1999 | CN1222250A Light emitting device and arrays thereof |
| 07/07/1999 | CN1221986A Transplanting method of super-thin micro-cavity laser device |
| 07/06/1999 | US5920767 Method of forming a groove in a semiconductor laser diode and a semiconductor laser diode |
| 07/06/1999 | US5920086 Light emitting device |
| 07/06/1999 | US5920079 Semiconductive light-emitting device having strained MQW with AlGaInAs barriers |
| 07/06/1999 | US5920078 Optoelectronic device using indirect-bandgap semiconductor material |
| 07/06/1999 | US5919715 Method for cleaning a semiconductor surface |
| 07/06/1999 | US5919579 Organic emission layer comprises a naphthalimide derivative |
| 07/06/1999 | US5919305 Thick film semiconductor |
| 07/01/1999 | DE19860326A1 LED matrix |
| 07/01/1999 | DE19860325A1 LED matrix |
| 07/01/1999 | DE19757560A1 Verfahren zur Herstellung einer porösen Schicht mit Hilfe eines elektrochemischen Ätzprozesses A process for preparing a porous layer with the aid of an electrochemical etching process |
| 06/30/1999 | EP0926784A2 Method of fabricating opto-electronic devices |
| 06/30/1999 | EP0926744A2 Light emitting device |
| 06/30/1999 | EP0733270B1 Radiation-emitting semiconductor diode and method of manufacturing such a diode |
| 06/30/1999 | CN1221215A White-light electroluminescence device with organic multi-quantum pit structure |
| 06/29/1999 | US5917846 Optical Semiconductor device with carrier recombination layer |
| 06/29/1999 | US5917227 Permits the diffusion regions to be formed at a higher density. |
| 06/29/1999 | US5917202 Highly reflective contacts for light emitting semiconductor devices |
| 06/29/1999 | US5917201 Light emitting diode with asymmetrical energy band structure |
| 06/29/1999 | US5917200 Optical semiconductor device |
| 06/29/1999 | US5917196 Low threshold current and low threshold voltage characteristics, niobium |
| 06/29/1999 | US5917195 Phonon resonator and method for its production |
| 06/29/1999 | US5917183 Method of temperature compensation for optoelectronic components, more specifically optoelectronic semiconductors |
| 06/24/1999 | WO1999031738A2 Aiii-nitride channeled led |
| 06/24/1999 | WO1999031737A1 Surface-mounted optoelectronic component and method for producing same |
| 06/24/1999 | WO1999031735A1 Bandgap isolated light emitter |
| 06/24/1999 | DE19755734A1 Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes A method for producing a surface-mountable optoelectronic component |
| 06/24/1999 | DE19754945A1 Optoelektronisches Bauelement für den infraroten Wellenlängenbereich Optoelectronic device for the infrared wavelength range, |
| 06/23/1999 | EP0924824A2 Semiconductor light emitting device and method for fabricating the same |
| 06/23/1999 | EP0924281A1 Organic light emitting diode with a terbium complex |
| 06/23/1999 | EP0923696A1 Integrally formed linear light strip with light emitting diodes |
| 06/22/1999 | US5915194 Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon |
| 06/22/1999 | US5915163 Method of manufacturing a semiconductor diode laser |
| 06/22/1999 | US5914501 Light emitting diode assembly having integrated electrostatic discharge protection |
| 06/22/1999 | US5914496 Radiation emitting semiconductor diode of buried hetero type having confinement region of limited Al content between active layer and at least one inp cladding layer, and method of manufacturing same |
| 06/22/1999 | US5914484 Circuit for adjusting luminous energy of light-emitting element and optical device using same |
| 06/22/1999 | US5914183 Porous semiconductor material |
| 06/17/1999 | WO1999030373A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL |
| 06/17/1999 | WO1999030372A2 Opto-electronical component for the infrared wavelength range |
| 06/17/1999 | DE19855476A1 Gallium nitride based semiconductor layer is formed by electron cyclotron resonance molecular beam epitaxy |
| 06/16/1999 | EP0922977A2 Optical module |
| 06/16/1999 | EP0922306A2 Uv/blue led-phosphor device with enhanced light output |
| 06/16/1999 | EP0922305A2 Uv/blue led-phosphor device with efficient conversion of uv/blue light to visible light |
| 06/15/1999 | US5912477 High efficiency light emitting diodes |
| 06/15/1999 | US5912476 Compound semiconductor epitaxial wafer |
| 06/10/1999 | WO1999028977A1 SEMICONDUCTOR DEVICE BASED ON HETEROEPITAXIAL FILMS OF NITRIDE COMPOUNDS Gal-xAlxN |
| 06/10/1999 | WO1999028971A1 Electronic hybrid component and method for the production thereof |
| 06/09/1999 | EP0921579A2 Thin film transistor based on substituted phthalocyanines |
| 06/09/1999 | EP0921577A1 Light emitting element, semiconductor light emitting device, and method for manufacturing them |
| 06/09/1999 | CN2323468Y Voltage controlled color organic electro-luminescent device |
| 06/09/1999 | CN1218997A Method for preparing multiple semiconductors |
| 06/09/1999 | CN1218996A Multiple colour light emitting diode body |
| 06/08/1999 | US5910663 Optical system and light emitting diode having a light dividing surface portion |
| 06/02/1999 | DE19751911A1 Manufacturing LED with hermetically sealed casing |
| 06/02/1999 | CN1218192A Method, article of manufacture, and optical package for eliminating tilt angle between header and optical emitter mounted thereon |
| 06/01/1999 | US5909614 Method of improving performance of semiconductor light emitting device |
| 06/01/1999 | US5909459 Surface-emitting semiconductor light emitting device |
| 06/01/1999 | US5909051 Minority carrier semiconductor devices with improved stability |
| 06/01/1999 | US5909040 Semiconductor device including quaternary buffer layer with pinholes |
| 06/01/1999 | US5909037 Bi-level injection molded leadframe |
| 06/01/1999 | US5909036 Group III-V nitride semiconductor device |
| 06/01/1999 | US5908303 Manufacturing method of light-emitting diode |
| 06/01/1999 | CA2139140C A method for fabricating a semiconductor photonic integrated circuit |
| 05/27/1999 | WO1999026299A1 Highly luminescent color-selective materials |
| 05/27/1999 | WO1999025907A1 A method of growing a buffer layer using molecular beam epitaxy |
| 05/27/1999 | WO1998050944A3 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| 05/27/1999 | DE19854414A1 Light emitting module |
| 05/26/1999 | EP0918384A2 Semiconductor light emitting device and method for fabricating the same |
| 05/26/1999 | EP0917741A2 Process for manufacturing an infrared-emitting luminescent diode |
| 05/26/1999 | EP0917736A1 Led-array in a matrix structure |
| 05/26/1999 | EP0917734A1 Illuminator assembly incorporating light emitting diodes |
| 05/26/1999 | EP0725939B1 Head-mounted display system |
| 05/26/1999 | EP0576566B1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| 05/26/1999 | CN2321116Y Support structure of light-emitting diode |
| 05/26/1999 | CN1217807A Display device |