| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 03/29/2001 | WO2000033388A9 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 03/29/2001 | DE10047963A1 Making multilayer thin film component, assembles component units, each carrying component layers on supportive substrates |
| 03/29/2001 | CA2351368A1 Cross under metal wiring structure for self-scanning light-emitting device |
| 03/28/2001 | EP1087447A1 Light-emitting semiconductor chip |
| 03/28/2001 | EP1086498A1 Optical semiconductor diode |
| 03/28/2001 | EP1086480A1 Planar electron emitter (pee) |
| 03/28/2001 | CN1289456A Light emitting device with phosphor composition |
| 03/28/2001 | CN1289455A Light emitting device with phosphor having high luminous efficacy |
| 03/28/2001 | CN1289454A Lighting system |
| 03/28/2001 | CN1289397A 照明系统 Lighting system |
| 03/28/2001 | CN1289152A 发光二极管 Led |
| 03/27/2001 | US6208078 Display device and display device assembly |
| 03/27/2001 | US6207973 Light emitting devices with layered III-V semiconductor structures |
| 03/27/2001 | US6207972 Light emitting diode with transparent window layer |
| 03/27/2001 | US6207469 Method for manufacturing a semiconductor device |
| 03/27/2001 | US6207229 Highly luminescent color-selective materials and method of making thereof |
| 03/27/2001 | US6206962 Intermetallics |
| 03/22/2001 | WO2001020691A1 Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss) |
| 03/22/2001 | WO2001020689A1 Method for producing a laterally integrated, monolithic light-emitting semiconductor component and a light-emitting semiconductor component |
| 03/22/2001 | WO2001020688A1 A method of manufacturing a light emitting diode unit body |
| 03/22/2001 | DE19945008A1 Substrate for a light emitting diode is made of sapphire has a first gallium nitride layer on the upper surface and side of the substrate and a second gallium nitride layer on the base surface and/or lower side of the substrate |
| 03/22/2001 | DE19945007A1 Light emitting diode used in computer peripherals and instrument displays comprises an epitaxial layer, a composite layer, a conducting substrate, a counter electrode and a front electrode |
| 03/22/2001 | DE19945006A1 Light emitting diode used in computer peripherals and instrument displays comprises a substrate with channel(s), a thin film buffer layer, an epitaxial layer, an electrode and a conducting layer |
| 03/22/2001 | DE19945005A1 Light-emitting diode used in computer peripherals and instrument displays comprises an epitaxial layer with a pn-junction, a gallium nitride thin film, a sapphire substrate, an electrode and a conducting layer |
| 03/21/2001 | EP1085583A2 Semiconductor devices with quantum-wave inference layers |
| 03/21/2001 | EP1085582A2 Light-emitting semiconductor device with quantum-wave interference layers |
| 03/21/2001 | EP1085581A2 Semiconductor device with quantum-wave interference layers |
| 03/21/2001 | EP1084514A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME |
| 03/21/2001 | CN1063587C Packaging of high power semiconductor lasers, and method therefor |
| 03/20/2001 | US6204545 Semiconductor device |
| 03/20/2001 | US6204523 High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
| 03/20/2001 | US6204514 Ultraviolet electroluminescent element and laser luminescent element |
| 03/20/2001 | US6204512 Provided with a p-electrode that allows observation of the light emitted from the device from a side of the substrate and an n-electrode that establishes an ohmic contact with an n-type gallium nitride-based compound semiconductor layer |
| 03/20/2001 | US6204084 Nitride system semiconductor device and method for manufacturing the same |
| 03/20/2001 | CA2054722C Substitutional carbon in silicon |
| 03/15/2001 | WO2001018883A1 Light-emitting diode with a structured surface |
| 03/15/2001 | WO2001018779A1 Led display device and control method therefor |
| 03/15/2001 | US20010000005 Transparent contacts for organic devices |
| 03/15/2001 | DE19936958A1 Light source for endoscopy has LEDs arranged on concave surface of calotte shell, with separate focussing lenses for each LED |
| 03/14/2001 | EP1083612A2 Efficient electron-injection for organic electroluminescent devices |
| 03/14/2001 | EP1082765A1 Opto-electronic element |
| 03/14/2001 | EP1082572A1 Luminaire with leds |
| 03/14/2001 | CN2423656Y 'Shirenyu' LED two-division type pin-cutting forming machine |
| 03/14/2001 | CN1287684A Thin film forming method, and semiconductor light emitting device manufacturing method |
| 03/14/2001 | CN1287602A Lighting device |
| 03/13/2001 | US6201823 Gallium nitride based compound semiconductor laser and method of forming the same |
| 03/13/2001 | US6201353 LED array employing a lattice relationship |
| 03/13/2001 | US6201265 Group III-V type nitride compound semiconductor device and method of manufacturing the same |
| 03/13/2001 | US6201264 Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials |
| 03/13/2001 | US6201262 Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| 03/13/2001 | US6200827 Method for manufacturing a semiconductor light emitting device |
| 03/13/2001 | US6200382 Method of manufacturing a semiconductor laser device and a crystal growth apparatus for use in a semiconductor laser device |
| 03/13/2001 | US6200002 Luminaire having a reflector for mixing light from a multi-color array of leds |
| 03/08/2001 | WO2001016634A1 Dual-enclosure optoelectronic packages |
| 03/08/2001 | WO2001016524A1 Luminaire, optical element and method of illuminating an object |
| 03/08/2001 | WO2001015905A1 Self-scanning light-emitting device |
| 03/08/2001 | WO2000017655A8 Water-soluble fluorescent semiconductor nanocrystals |
| 03/08/2001 | CA2348400A1 Self-scanning light-emitting device |
| 03/07/2001 | EP1081818A2 Semiconductor laser devices |
| 03/07/2001 | EP1081817A2 A semiconductor device |
| 03/07/2001 | EP1081771A2 Light emitting device |
| 03/07/2001 | EP1081761A1 Semiconductor device |
| 03/07/2001 | EP1081747A1 Diamond PN junction diode and method for the fabrication thereof |
| 03/07/2001 | EP1081256A2 ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
| 03/07/2001 | CN2422728Y Non-crystal system AL In GaN luminous diode structure |
| 03/07/2001 | CN1062981C Indicating lamp of light-emitting diode (LED) |
| 03/06/2001 | US6198579 Process for the correction of non-rotationally-symmetrical image errors |
| 03/06/2001 | US6198112 III-V compound semiconductor luminescent device |
| 03/06/2001 | US6197609 Method for manufacturing semiconductor light emitting device |
| 03/06/2001 | US6197441 Cubic nitride semiconductor device and fabrication method of the same |
| 03/06/2001 | US6197218 Phosphor spherical particles of yttrium-gadolinium borate, zinc silicate, barium magnesium aluminate and barium aluminate in a liquid vehicle to be applied to a substrate; flat panel displays, e.g. plasma type; fluorescent lighting elements |
| 03/01/2001 | WO2001015243A1 Light-emitting thyristor and self-scanning light-emitting device |
| 03/01/2001 | WO2001015242A1 Method for the production of an optoelectronic component with a lens |
| 03/01/2001 | WO2001015232A1 Active matrix electroluminescent display device |
| 03/01/2001 | WO2001014790A1 Diffuse lighting arrangement |
| 03/01/2001 | WO2001014250A2 Synthesis of silicon nanoparticles and metal-centered silicon nanoparticles and applications thereof |
| 03/01/2001 | DE19937624A1 Luminescent diode with high luminosity comprises a rear electrode, a semiconductor substrate, a lower sleeve layer, an active layer, an upper sleeve layer, a window layer, a contact |
| 03/01/2001 | CA2348632A1 Light-emitting thyristor and self-scanning light-emitting device |
| 02/28/2001 | EP1079486A2 Method of fabricating a semiconductor mesa device |
| 02/28/2001 | EP1079444A2 Light-emitting semiconductor device using group III nitride compound |
| 02/28/2001 | EP1079427A2 Encapsulated electronic part and method of fabricating thereof |
| 02/28/2001 | EP1078816A2 Vehicle lighting device using led light source |
| 02/28/2001 | CN2421793Y Efficient high-colour purity lanthanum complex organic electroluminescent device |
| 02/28/2001 | CN1285955A Semiconductor substrate and method for making same |
| 02/28/2001 | CN1285619A Electronic parts and making method thereof |
| 02/27/2001 | US6194960 Driver IC |
| 02/27/2001 | US6194839 Lattice structure based LED array for illumination |
| 02/27/2001 | US6194744 Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer |
| 02/27/2001 | US6194743 Nitride semiconductor light emitting device having a silver p-contact |
| 02/27/2001 | US6194742 Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
| 02/27/2001 | US6194245 Method for making thin film semiconductor |
| 02/27/2001 | US6194241 Semiconductor light emitting device and method of manufacturing the same |
| 02/27/2001 | US6194239 Method for making thin film semiconductor |
| 02/27/2001 | US6193908 Electroluminescent phosphor powders, methods for making phosphor powders and devices incorporating same |
| 02/27/2001 | US6193383 Linear light source unit |
| 02/22/2001 | WO2001013437A1 Chip semiconductor light-emitting device |
| 02/22/2001 | WO2000023826A3 Electrochromic mirror incorporating a third surface reflector |
| 02/21/2001 | CN2420731Y White-light luminous diode with yellow light tube core |
| 02/21/2001 | CN1285082A Surface-mounted optoelectronic component and method for producing same |
| 02/21/2001 | CN1284751A 发光二极管 Led |