Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
12/1999
12/23/1999WO1999048339A8 Substrate for patterning thin film and surface treatment thereof
12/23/1999DE19827602A1 Verfahren zur Korrektur nicht-rotationssymmetrischer Bildfehler A method of correcting non-rotationally symmetric aberrations
12/22/1999EP0966047A2 GaN single crystal substrate and method of producing same
12/22/1999EP0965871A1 Method for correcting rotationally asymmetric imaging aberrations
12/22/1999CN1239342A Optical device including carbon-doped contact layers
12/22/1999CN1047691C Color freely changeable fully-centralized extra-high photo effect solid photo source
12/21/1999US6005263 Light emitter with lowered heterojunction interface barrier
12/21/1999US6005258 Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
12/21/1999CA2134256C Apparatus and method for referencing an optical receiver
12/16/1999WO1999065085A1 Fast luminescent silicon
12/16/1999WO1999065050A1 Planar electron emitter (pee)
12/16/1999DE19821544A1 Diode laser component with heat sink providing less thermal expansion stress
12/16/1999CA2334175A1 Fast luminescent silicon
12/16/1999CA2332556A1 Planar electron emitter (pee)
12/15/1999EP0964489A1 Optical device including carbon-doped contact layers
12/15/1999EP0964453A2 Article comprising an oxide layer on a GaAs-Based semiconductor body, and method of making the article
12/15/1999EP0964452A2 Semiconductor device with quantum-wave interference layers
12/15/1999CN2354244Y Device for preventing lead wire from error when splitting and chopping light
12/15/1999CN2354243Y Formation mould for luminous diode
12/15/1999CN1238858A Opto-electronic module for bi-directional optical data transmission
12/15/1999CN1238830A Method for production of conducting element and conducting element
12/14/1999USRE36446 Providing electrically insulating substrate; mounting a device having termainals on individual land areas; electrically connecting terminals; depositing curable layer of insulative material; curing; dividing into modular components
12/14/1999US6002700 Optical semiconductor device having a multilayer reflection structure
12/14/1999US6002698 Nonlinearity compensation of laser diode and other semiconductor diodes
12/14/1999US6002458 Liquid crystal display device
12/14/1999US6002212 Method and device for driving a radiation emitting device
12/14/1999US6001669 Method for producing II-VI compound semiconductor epitaxial layers having low defects
12/14/1999US6001483 Epoxy resin comprising: an epoxy resin; a hardener; and an alkylene-ethylene glycol copolymer of given formula; superior mold releasability and transparency
12/14/1999US6001173 Method of forming a compound semiconductor film
12/09/1999WO1999063602A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
12/09/1999WO1999063594A1 Semiconductor device
12/09/1999WO1999050916A9 Quantum dot white and colored light emitting diodes
12/09/1999DE19905517A1 Buffer layer for semiconductor device
12/09/1999DE19905516A1 Light emitting diode with interfacial layer and sharp p-n junction
12/08/1999CN1237795A Gallium nitride monocrystal substrate and its manufacturing method
12/07/1999US5999552 Radiation emitter component
12/07/1999US5999151 Pixel, video display screen and power delivery
12/07/1999US5998925 Indium, gallium, aluminum nitride; garnet containing rare earth oxide
12/07/1999US5998809 Multilayer
12/07/1999US5998232 Planar technology for producing light-emitting devices
12/07/1999US5998231 Semiconductor light-emitting device and method of manufacturing the same
12/07/1999US5996221 Method for thermocompression bonding structures
12/02/1999DE19824566C1 GaP-Halbleiteranordnung und Verfahren zur Herstellung derselben GaP semiconductor device and method of manufacturing the same
12/02/1999DE19824222A1 Transparent window layer for light emitting diode
12/01/1999EP0961371A1 Optoelectronic module and method for stabilizing its temperature
12/01/1999EP0961328A2 Gallium nitride-type semiconductor device
12/01/1999EP0960738A2 Semiconductor-chip control apparatus and control method and image recording apparatus and its control method
12/01/1999EP0960444A1 Passivation capping layer for ohmic contact in ii-vi semiconductor light transducing device
12/01/1999EP0960037A1 Luminous element, especially for illuminating function symbols or indicating functions in automobiles
11/1999
11/30/1999US5995529 Infrared light sources with semimetal electron injection
11/30/1999US5994723 Semiconductor element and its method of manufacturing
11/30/1999US5994722 Image display device that emits multicolored light
11/30/1999US5994720 Indirect bandgap semiconductor optoelectronic device
11/30/1999US5994205 Method of separating semiconductor devices
11/30/1999US5994154 Method of fabricating an optical semiconductor device
11/30/1999US5993542 Having an excellent quality with a good crystallographic property and no surface roughness or cracks.
11/30/1999US5993074 High speed electro-optical signal translator
11/30/1999CA2099049C Permanent metallic bonding method
11/25/1999WO1999044243A3 SEMICONDUCTOR DEVICE COMPRISING P-TYPE ZnMgSSe LAYER
11/25/1999CA2272178A1 Optoelectronic module and method for stabilizing its temperature
11/24/1999CN2350874Y Double layer resin filling machine for LED
11/24/1999CN1236486A Electroluminescent device made of organic material
11/23/1999US5991326 Lattice-relaxed verticle optical cavities
11/23/1999US5991322 Semiconductor optical device
11/23/1999US5991160 Surface mount LED alphanumeric display
11/23/1999US5990920 Driving apparatus with circuits for efficiently transferring and storing compensation data
11/23/1999US5990500 Metal on semiconductor
11/23/1999US5990499 Integrated semiconductor circuit
11/23/1999US5990498 Light-emitting diode having uniform irradiance distribution
11/23/1999US5990497 Semiconductor light emitting element, semiconductor light emitting device using same element
11/23/1999US5990496 Light emitting device with cap layer
11/23/1999US5990495 Multilayer; single crystal substrate; buffer layer
11/23/1999US5990494 Optoelectro transducer array, and light-emitting device array and fabrication process thereof
11/23/1999US5989339 Molecular beam epitaxy (mbe) to form n-type cladding, active layer, p-type cladding successively, then forming in second chamber contactor layers of alternating zinc selenide/zinc telluride capped with zinc telluride; laser light emitters
11/23/1999CA2153798C Optical device packaging
11/18/1999DE19921987A1 Light-radiating flip chip semiconductor device
11/17/1999EP0957525A1 Epitaxial wafer of compound semiconductor
11/17/1999EP0956623A1 Semiconductor laser device
11/17/1999EP0956601A1 Optoelectronic semiconductor component
11/17/1999CN1235397A Apparatus for stabilizing output wavelength of laser diode
11/16/1999US5987047 Radiation-emitting semiconductor diode and method of manufacturing
11/16/1999US5986317 Optical semiconductor device having plural encapsulating layers
11/16/1999US5986288 N-type gallium phosphide single crystal substrate with boron
11/16/1999US5986285 Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof
11/16/1999US5985954 Epoxy resin composition for sealing photo-semiconductor element and photo-semiconductor device sealed with the epoxy resin composition
11/16/1999US5985696 Method for producing an optoelectronic semiconductor component
11/16/1999US5985683 Depositing mask in first region over an oxidizable layerleaving second region which is removed, depositing a nonoxidizable material
11/16/1999US5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer
11/11/1999WO1999057788A2 Light emitting semiconductor device
11/11/1999DE19819543A1 Lichtemissions-Halbleitereinrichtung The light-emitting semiconductor device
11/11/1999DE19819211A1 Holder for semiconductor bars during optoelectronic component manufacture
11/10/1999EP0955709A2 Blue edge emitting laser
11/10/1999EP0955708A2 Blue vertical cavity surface emitting laser
11/10/1999EP0955704A2 Photoelectric conversion element and method for manufacturing the same
11/10/1999EP0955681A2 Optical semiconductor device and method of fabricating the same
11/10/1999EP0955680A1 p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
11/10/1999CN1234911A Spheric semiconductor device, method for manufacturing same, and spheric semiconductor device material
11/10/1999CN1234615A Optical module
11/10/1999CN1046375C Gallium nitride-based III-V group compound semiconductor device and method of producing the same
11/09/1999US5982092 Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter
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