Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
12/2000
12/05/2000US6157050 Optical module and lead frame for optical module
12/05/2000US6157047 Light emitting semiconductor device using nanocrystals
12/05/2000US6157012 Method of manufacturing an optical module using multiple applications of thermosetting resins and multiple heating processes
12/05/2000US6156584 Method of manufacturing a semiconductor light emitting device
12/05/2000US6156581 Reacting a vapor-phase gallium aluminum indium composition with a vapor-phase nitrogenous compound in the presence of a substrate to grow a gallium aluminum indium nitride base layer on the substrate, thereby yielding a microelectronic device
11/2000
11/30/2000WO2000071930A1 Luminaire with leds
11/30/2000WO2000046839A3 LUMINESCENCE SPECTRAL PROPERTIES OF CdS NANOPARTICLES
11/30/2000DE19924316A1 Luminescent diode has a cone shape with geometry selected for maximum output
11/30/2000DE19922361A1 LED-Modul für Signaleinrichtungen LED module for signaling devices
11/30/2000DE19920871A1 UV-unterstützte thermische Behandlung von Verbindungshalbleitern in RTP-Systemen UV-assisted thermal treatment of compound semiconductors in RTP systems
11/30/2000DE10011567A1 Luminescent material for light emitting element, comprises silicon and nitrogen, with the amount of silicon higher than stoichiometric amount of silicon in silicon nitride
11/29/2000EP1055557A2 Vehicle lighting device with a plurality of light-emitting diodes employed as light source
11/29/2000CN2408574Y Structure improvement of fixed crystal device
11/29/2000CN2408571Y Luminous diode chip and epitaxy chip light intensity measurer
11/29/2000CN2408567Y Luminous diode lamp for lamp series
11/29/2000CN1274906A Two-dimensional display device
11/28/2000US6154592 Optical connector
11/28/2000US6154362 Display apparatus
11/28/2000US6153895 Semiconductor comprises a p-type impurity of a group 2a or group 5b element, and an n-type impurity of a group 4b or 7b element, or both, contained in a group 1b-3b-(6b)2 compound semiconductor; high conversion efficiency solar battery
11/28/2000US6153894 Active layer as a nitride mixed-crystal layer directly joined to the upper end layer of super lattice structure in which n-type nitride semiconductor crystal layers of different composition are stacked repeatedly; emits long wavelength
11/28/2000US6153123 For flat panel display devices such as liquid crystal displays, plasma displays, thick film and thin film electroluminescent displays and field emission displays; narrow particle size distribution, spherical morphology
11/28/2000US6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
11/23/2000WO2000070692A1 Conducting polymers
11/23/2000WO2000070691A1 Light emitting diode with improved efficiency
11/23/2000WO2000070687A1 Led module for signaling devices
11/23/2000WO2000021144A9 VERTICAL GEOMETRY InGaN LED
11/23/2000DE19922176A1 Oberflächenmontierte LED-Mehrfachanordnung The surface-mount LED array
11/23/2000DE19921684A1 Illuminating element for illuminating food counters has semiconductor chips arranged on a conducting support material and controlled by conducting paths
11/22/2000EP1054491A2 Gallium nitride based semiconductor light emitting device
11/22/2000EP1054442A2 Method for growing epitaxial group III nitride compound semiconductors on silicon
11/22/2000EP1054082A1 P-type group II-VI compound semiconductor crystals, growth method for such crystals, and semiconductor device made of such crystals
11/22/2000CN1274177A Luminous device and its mfg. method
11/21/2000US6150716 Metal substrate having an IC chip and carrier mounting
11/21/2000US6150677 Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device
11/21/2000US6150674 Semiconductor device having Alx Ga1-x N (0<x<1) substrate
11/21/2000US6150673 Light emitting diode unit for distance measuring system
11/21/2000US6150672 P-type group III-nitride semiconductor device
11/21/2000US6150192 Apparatus and method for snap-on thermo-compression bonding
11/21/2000US6150190 Method of formation of buried mirror semiconductive device
11/16/2000WO2000069000A1 Light-emitting diode arrangement
11/16/2000WO2000068988A1 Uv-supported activation of a doping agent in compound semiconductors by means of rtp systems
11/16/2000WO2000068983A1 Method for producing an element with material that has been made porous
11/16/2000WO2000068720A1 Phase conjugating structure for mode matching in an optical amplifier
11/16/2000WO2000068473A1 Detached and inverted epitaxial regrowth & methods
11/16/2000WO2000068471A1 Sequential hydride vapor-phase epitaxy
11/16/2000WO2000068470A1 Magnesium-doped iii-v nitrides & methods
11/16/2000WO2000021061A3 Background lighting which functions using white light
11/16/2000WO2000017678A3 Light-conducting fibre with a circular and non-circular cross-section
11/16/2000DE19921190A1 Verfahren zur Herstellung eines Elements mit porosidiertem Material A process for producing an element with porosidiertem material
11/15/2000EP1052706A2 Light emitting device and method of manufacturing the same
11/15/2000EP1052705A1 Method for fabricating a group III Nitride semiconductor device
11/15/2000EP1052684A1 A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
11/15/2000EP1051759A1 Light emitting device with phosphor composition
11/15/2000EP1051758A1 Light emitting device with phosphor having high luminous efficacy
11/15/2000EP1051746A1 Integrated circuit device
11/15/2000EP1051582A1 Lighting fixture
11/15/2000CN1273759A Circuit arrangement and signaling light provided with the circuit arrangement
11/15/2000CN1273438A Epitaxial growth chip used for infrared emitting diode and infrared emitting diode
11/14/2000US6148012 Multiple wavelength quantum cascade light source
11/14/2000US6147817 Optical module
11/14/2000US6147458 Circuit arrangement and signalling light provided with the circuit arrangement
11/14/2000US6147367 Packaging design for light emitting diode
11/14/2000US6147365 Optoelectronic semiconductor component
11/14/2000US6147364 Compound semiconductor device formed of nitrogen-containing gallium compound such as gan, algan or ingan
11/14/2000US6147363 Nitride semiconductor light-emitting device and manufacturing method of the same
11/14/2000US6147359 Method of making silicon quantum wires
11/14/2000US6146916 Forming a zno buffer layer on a glass or a silicon substrate; and epitaxially growing a gan-based semiconductor layer on the zno buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ecr-mbe) method.
11/14/2000US6146457 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
11/08/2000EP1044586A4 Highly transparent non-metallic cathodes
11/07/2000US6144681 Article comprising a dual-wavelength quantum cascade photon source
11/07/2000US6144396 Exposure device and printer
11/07/2000US6144044 Gallium phosphide light-emitting diode having improved electrical characteristics and/or improved brightness
11/07/2000US6144043 Light emitting semiconductor device having plural light emitting elements with different junction depth
11/07/2000US6143582 High density electronic circuit modules
11/02/2000WO2000065700A2 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors
11/02/2000WO2000065667A1 Led having embedded light reflectors to enhance led output efficiency
11/02/2000WO2000065666A1 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
11/02/2000WO2000065665A1 Radiation source
11/02/2000WO2000065664A1 Led light source with lens
11/02/2000WO2000065395A1 Electro-optical transformer component and method for producing same
11/02/2000WO2000041221A3 Method and device for shaping surfaces of semiconductors
11/02/2000EP1049360A2 Programmable led driver pad
11/02/2000EP1049179A2 Chip-type semiconductor light emitting device
11/02/2000EP1049178A2 Group III nitride compound semiconductor light-emitting device
11/02/2000EP1048085A1 Led module and luminaire
11/02/2000EP1048081A1 Bandgap isolated light emitter
11/02/2000EP1047904A1 Lighting system
11/02/2000EP0746887B1 Semiconductor device
11/02/2000DE19918370A1 LED-Weißlichtquelle mit Linse LED white light source with lens
11/02/2000DE10020612A1 Red to yellow-green aluminum gallium indium phosphide LED, used for traffic signals, vehicle rear and fog lights or full color displays, has a low energy gap layer inserted between p-cladding layer and p-window layer
11/02/2000CA2371361A1 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element
11/01/2000CN2404217Y Illuminating body
11/01/2000CN1272226A Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other device
11/01/2000CN1271967A Method for decreasing thickness of window layer of high-brightness LED chip by doping technology
11/01/2000CN1271966A Production method of high-brightness LED chip using zinc oxide as its window layer
11/01/2000CN1271965A Algalnp series luminous diode and epitaxial wafer used for making said diode
10/2000
10/31/2000US6140980 Head-mounted display system
10/31/2000US6140248 Process for producing a semiconductor device with a roughened semiconductor surface
10/31/2000US6139760 Short-wavelength optoelectronic device including field emission device and its fabricating method
10/31/2000US6139304 Mold for injection molding encapsulation over small device on substrate
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