Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
12/1998
12/01/1998US5844257 Multi-directional light emitting semiconductor device
12/01/1998US5843590 Epitaxial wafer and method of preparing the same
12/01/1998US5843227 Crystal growth method for gallium nitride films
11/1998
11/25/1998EP0880181A2 Low voltage-drop electrical contact for gallium (aluminium, indium) nitride
11/25/1998EP0714557B1 Method of providing a film of conjugated, substituted or unsubstituted poly(p-phenylene vinylene) on a substrate by chemical vapour deposition (cvd), as well as a method of manufacturing an electroluminescent (el) device
11/25/1998EP0683930B1 Buried-ridge ii-vi laser diode and method of fabrication
11/25/1998EP0429566B1 Radiation detector array using radiation sensitive bridges
11/24/1998US5841177 Multicolor light emitting device
11/24/1998US5841154 Light-emitting diode device with reduced scatter
11/24/1998US5841152 Optical semiconductor device provided with strained quantum well layer formed on a ternary compound semiconductor substrate
11/19/1998WO1998052229A1 Light emitting device contact layers having substantially equal spreading resistance and method of manufacture
11/19/1998WO1998051757A1 Organic electroluminescence element
11/18/1998EP0878026A1 Led matrix
11/17/1998US5838706 Low-strain laser structures with group III nitride active layers
11/17/1998US5838705 Light emitting device having a defect inhibition layer
11/17/1998US5838174 Photocoupler having element isolation layers for low cross-talk low stress and high break down voltage
11/17/1998US5838029 GaN-type light emitting device formed on a silicon substrate
11/17/1998US5838028 Al, ga, as
11/17/1998US5838024 Image forming system
11/17/1998US5837561 Fabrication of transparent substrate vertical cavity surface emitting lasers by semiconductor wafer bonding
11/17/1998US5836676 Light emitting display apparatus
11/12/1998WO1998050944A2 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
11/12/1998DE19820777A1 Electrode for light emitting semiconductor device
11/12/1998DE19810060A1 Bonding component to substrate especially by flip-chip technique
11/11/1998EP0877455A2 Semiconductor light emitting device and method for producing the same
11/11/1998EP0877452A2 Laser sub-mount
11/11/1998EP0877428A2 A device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing said device
11/10/1998US5834792 Articles comprising doped semiconductor material
11/10/1998US5834763 Low noise photon coupled circuit
11/10/1998US5834378 Increasing quantum efficiency of silicon carbide layer by coating an oxide passivating layer on the pore wall to eliminate dangling bonds and surface statics
11/10/1998US5834361 Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same
11/10/1998US5834331 Method for making III-Nitride laser and detection device
11/10/1998US5834326 Process for producing a luminous element of group III nitride semi-conductor
11/10/1998US5834325 Light emitting device, wafer for light emitting device, and method of preparing the same
11/10/1998US5833903 Injection molding encapsulation for an electronic device directly onto a substrate
11/10/1998US5833870 Method for forming a high density quantum wire
11/10/1998US5833355 Led illuminated lamp assembly
11/07/1998CA2236693A1 Laser sub-mount
11/04/1998EP0875946A1 Light emitting diode with a microcavity and a method of producing such device
11/04/1998EP0875940A2 Optoelectronic array and method of making the same
11/04/1998EP0875078A1 Iii-v/ii-vi semiconductor interface fabrication method
11/04/1998EP0874964A1 An led illuminated lamp assembly
11/04/1998CN2296580Y 半导体节能灯 Semiconductor energy-saving lamps
11/04/1998CN1197998A Epitaxial chip and its manufacture
11/04/1998CN1197909A Signaling device with light emitting diode
11/03/1998US5831329 Layered system with an electrically activatable layer
11/03/1998US5831277 III-nitride superlattice structures
10/1998
10/28/1998EP0874405A2 GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
10/28/1998EP0874403A2 Semiconductor devices with quantum-wave interference layers
10/28/1998EP0873557A1 Image-display device emitting multicoloured light
10/28/1998EP0873231A1 Closed mold for led alphanumeric displays
10/28/1998CN1197510A Device and method for optical package for providing feedback
10/27/1998US5828172 Diode mount for an led with a plug connector and compensating resistor, and a method of its manufacture
10/27/1998US5828118 System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector
10/27/1998US5828088 Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
10/27/1998US5828086 Semiconductor light emitting device with a Mg superlattice structure
10/27/1998US5828085 Light emitting diode having light-emitting and light-absorbing regions
10/22/1998WO1998047185A1 Recovery of surface-ready silicon carbide substrates
10/22/1998WO1998047170A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
10/22/1998WO1998047123A2 Electrical device
10/22/1998DE19715572A1 Selective epitaxy of III-V nitride semiconductor layers
10/21/1998EP0872898A2 Led array
10/21/1998EP0872892A2 LED array and printer for an electrophotographic printer with said LED array
10/21/1998CN1196828A Photoelectronic material, device using same and method for manufacturing same
10/20/1998US5825796 Extended wavelength strained layer lasers having strain compensated layers
10/20/1998US5825054 Plastic-molded apparatus of a semiconductor laser
10/20/1998US5825053 Heterostructure III-V nitride semiconductor device including InP substrate
10/20/1998US5825052 Gallium nitride
10/20/1998US5825051 Optoelectronic component with central hollow
10/20/1998US5824186 Method and apparatus for fabricating self-assembling microstructures
10/15/1998WO1998045882A1 Semiconductor quantum oscillation device
10/15/1998DE19715053A1 Elektrisches Gerät Electrical equipment
10/15/1998DE19714659A1 Opto-electronic component insensitive to local temperature variations
10/14/1998EP0871228A2 Semiconductor substrate, semiconductor device and method of manufacturing the same
10/14/1998EP0871226A2 Method of manufacturing light-receiving/emitting diode array chip
10/14/1998EP0871049A1 Semiconductor device
10/14/1998EP0870352A1 Method of manufacturing an optoelectronic semiconductor device comprising a mesa
10/14/1998EP0870336A1 Surface mount led alphanumeric display
10/14/1998EP0870294A2 True color flat panel display using an led dot matrix and led dot matrix drive method and apparatus
10/14/1998EP0734586A4 Method for fabricating self-assembling microstructures
10/14/1998EP0712536B1 A SEMICONDUCTOR HETEROSTRUCTURE HAVING A II-VI COMPOUND IN OHMIC CONTACT WITH A p-TYPE GaAs SUBSTRATE
10/14/1998CN1195895A Semiconductor quantum oscillator device
10/13/1998US5822478 Optical device with means for preventing remaining scattered light rays from being fed back to the signal line and method for fabricating it
10/13/1998US5822347 Semiconductor light emitting device and method for fabricating the same
10/13/1998US5821615 Semiconductor chip package having clip-type outlead and fabrication method of same
10/13/1998US5821571 Dual sided integrated electro-optical package
10/13/1998US5821569 Surface-emission type light-emitting diode and fabrication process therefor
10/13/1998US5821568 Multilayer element with nitride of aluminum, gallium or indium for light emitting diodes
10/13/1998US5821567 High-resolution light-sensing and light-emitting diode array
10/13/1998US5821555 N-type impurity of a higher concentration formed between the first and second layer; lowers the operating voltage; reliability
10/13/1998US5821171 Article comprising a gallium layer on a GaAs-based semiconductor, and method of making the article
10/13/1998US5821155 Adding gaseous compounds of group 3 and group 5 elements; simultaneously adding silicon iodide as dopant gas with a carrier; low growth temperatures; dopant concentration control
10/08/1998WO1998044569A1 Light emitting device and method for manufacturing the same
10/08/1998WO1998044539A1 Method for manufacturing compound semiconductors
10/08/1998WO1998021755A3 Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
10/07/1998EP0869589A2 Method and apparatus for reducing excess photon noise in short coherence light sources
10/07/1998EP0869522A1 Signalling device with light emitting diode
10/07/1998EP0868743A1 Conductive element with lateral oxidation barrier
10/06/1998US5818546 Apparatus for generating an image
10/06/1998US5818072 Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
1 ... 934 935 936 937 938 939 940 941 942 943 944 945 946 947 948 949 950 951 952 953 954 ... 994