Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
06/2000
06/29/2000CA2352228A1 Method for wavelength compensation in semiconductor manufacturing
06/28/2000EP1014455A1 Nitride semiconductor device
06/28/2000EP1014430A1 Method for relieving lattice mismatch stress in semiconductor devices
06/28/2000EP1013740A2 Electroluminescent material, electroluminescent element and color conversion filter
06/28/2000EP1013413A1 Electroconductive glass laminate
06/28/2000EP1012872A1 Light emitting device and arrays thereof
06/28/2000EP0641493B1 Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
06/28/2000CN1258428A Substrate for patterning thin film and surface treatment thereof
06/28/2000CN1258094A Nitride semiconductor growth method, semiconductor device and its mfg. method
06/27/2000USRE36747 Light-emitting device of gallium nitride compound semiconductor
06/27/2000US6081540 Semiconductor light emitting device with high light emission efficiency
06/27/2000US6081001 Nitride semiconductor light emitting device
06/27/2000US6080599 Semiconductor optoelectric device and method of manufacturing the same
06/22/2000WO2000036645A1 Light extractor apparatus
06/22/2000WO2000036336A1 Light engine
06/22/2000CA2351822A1 Light extractor apparatus
06/21/2000EP1011151A2 Semiconductor device with reflector
06/21/2000CN2384314Y Organic film electroluminescent element with multi-layer seal
06/21/2000CN2384313Y Light emitting diode
06/21/2000CN1257313A Led
06/20/2000US6078064 Transparent conductive layer such as of indium tin oxide is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and reduce series resistance
06/20/2000US6078063 Light-emitting gallium nitride-based compound semiconductor device
06/20/2000US6078062 II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation
06/20/2000US6078061 Light emitting diode with patterned electrode
06/20/2000US6077720 Method for fabricating semiconductor laser facets using combined cleave and polish technique
06/20/2000US6077342 Single crystal formed by the czochralski method and having a crystallographic axis as a pulling direction set within an angle range of 30 degrees from a b-axis (010) direction; substrate for uniform gallium nitride semiconductor thin film
06/15/2000WO2000035029A1 Organic light emitting material and device
06/15/2000WO2000034989A1 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
06/15/2000DE19958229A1 Casing for optical semiconductor sensor, comprises focusing unit, transparent plate and casing
06/14/2000EP1009043A2 Electroluminescent device with polyphenyl hydrocarbon hole transport layer
06/14/2000EP1009042A2 Electroliuminescent device with arylethylene derivatives in hole transport layer
06/14/2000EP1009034A1 Semiconductor quantum oscillation device
06/14/2000EP1008213A1 Light absorbing layer for ii-vi semiconductor light emitting devices
06/14/2000EP1008189A1 II-VI SEMICONDUCTOR DEVICE WITH BeTe BUFFER LAYER
06/14/2000EP1008164A1 Bilayer polymer electroluminescent device featuring interface electroluminescence
06/14/2000EP1007771A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
06/14/2000EP1007768A2 Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature
06/14/2000CN1256795A Semiconductor light-emitting diode
06/13/2000US6074889 Method for producing semiconductor light-emitting device with undoped spacer layer
06/13/2000US6074888 Method for fabricating semiconductor micro epi-optical components
06/08/2000WO2000033396A1 Organic solar cell or light-emitting diode
06/08/2000WO2000033390A1 Light emitting device with phosphor composition
06/08/2000WO2000033389A1 Light emitting device with phosphor having high luminous efficacy
06/08/2000WO2000033388A1 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES
06/08/2000WO2000033365A1 Fabrication of gallium nitride layers by lateral growth
06/08/2000WO2000033364A1 Epitaxial aluminium-gallium nitride semiconductor substrate
06/08/2000WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
06/08/2000DE19956344A1 Halbleitervorrichtung mit geringer Störkapazität A semiconductor device with less parasitic capacitance
06/07/2000EP1006169A1 Polymers for use in optical devices
06/07/2000CN1255646A Method for making optical assembly
06/06/2000US6072819 Semiconductor light-emitting device and method of fabricating the same
06/06/2000US6072445 Head mounted color display system
06/06/2000US6072202 II-VI compound semiconductor device with III-V buffer layer
06/06/2000US6072197 Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
06/06/2000US6072196 semiconductor light emitting devices
06/06/2000US6072189 Graded layers arranged at the interfaces between the cladding layers, contact layers and the active layer to compensate for the lattice mismatching between active region and first or second cladding regions; efficiency
06/06/2000US6071795 Separation of thin films from transparent substrates by selective optical processing
06/06/2000US6070986 Method of manufacturing a lighting unit for inspecting a surface
06/06/2000CA2065577C Encapsulated light emitting diode and method for encapsulation
06/02/2000WO2000031783A1 Fabrication of gallium nitride layers on silicon
05/2000
05/31/2000EP1005124A2 Semiconductor light emitting device and its manufacturing method
05/31/2000EP1005120A1 Optical semiconductor device with a mode converter
05/31/2000EP1005068A2 GaN film having a reduced threading dislocations density and fabrication method thereof
05/31/2000EP1005067A2 Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor device
05/31/2000EP1004145A1 Optoelectronic component
05/31/2000DE19953160A1 Verbesserte Elektrodenstrukturen für lichtemittierende Bauelemente Improved electrode structures for light-emitting devices
05/31/2000CN2381043Y Semiconductor lightwave and photoelectronic device with non-parallel cavity structure
05/31/2000CN1254866A Explosing device and imaging equipment using it
05/30/2000US6069741 Optical device having aperture arrays for shielding light
05/30/2000US6069440 Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
05/30/2000US6069394 Semiconductor substrate, semiconductor device and method of manufacturing the same
05/30/2000US6069367 Semiconductor element and semiconductor light-emitting and semiconductor photoreceptor devices
05/30/2000US6069021 Boron phosphide buffer layers
05/30/2000US6069020 Method of manufacturing semiconductor light-emitting device
05/30/2000CA2030785C Electroluminescent devices
05/25/2000WO2000030183A1 Transistor and semiconductor device
05/25/2000WO2000030178A1 Iii-nitride quantum well structures with indium-rich clusters and methods of making the same
05/25/2000DE19954242A1 Group III nitride semiconductor light emitting diode or laser diode has a light emitting superlattice structure with an overlying active layer of nonlinear potential structure
05/24/2000EP1003227A2 Semiconductor device
05/24/2000EP1002696A2 Light emitting diode mounting structure
05/24/2000CA2290147A1 Semiconductor optical component with a mode adaptor
05/23/2000US6066862 High brightness light emitting diode
05/23/2000US6066861 Wavelength-converting casting composition and its use
05/23/2000US6066004 LED light string structure
05/18/2000DE19945675A1 Oberflächenbefestigbares LED-Gehäuse Oberflächenbefestigbares LED housing
05/18/2000DE19938053A1 Hochstabile optische Einkapselung und Packung für lichtemittierende Dioden Highly stable optical encapsulation and packaging for light-emitting diodes
05/18/2000DE19861139A1 Steckerteil für eine optische Steckverbindung Plug part for an optical plug-in connection
05/17/2000EP1001468A1 Rare earth oxide layer on a GaAs- or GaN-based semiconductor body
05/17/2000CN1253663A Multichip module
05/17/2000CN1253431A Module used in bidirectional optical communication
05/17/2000CN1253383A Electroluminescent device and its making method
05/17/2000CN1052577C Method for preparing composite film of nm-level ferroelectrics-semiconductor particles
05/16/2000US6064683 Bandgap isolated light emitter
05/16/2000US6064418 Led array, print head, and electrophotographic printer
05/16/2000US6064079 Heat generation structure includes a low resistivity portion having a relatively low resistivity and a high resistivity portion having a relatively high resistivity and positioned adjacent to the low resistivity portion.
05/16/2000US6064078 Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
05/16/2000US6064076 Light-emitting diode having a transparent substrate
05/16/2000US6063644 Light-emitting element and array with etched surface, and fabrication method thereof
05/16/2000US6063643 Surface-emission type light-emitting diode and fabrication process thereof
05/16/2000US6061916 Head tracking system
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