Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
10/2000
10/26/2000WO2000063977A1 Lighting system
10/26/2000WO2000063961A1 Dual process semiconductor heterostructures and methods
10/26/2000DE19918647A1 Zinc selenide bulk crystal, useful as a substrate for an LED or laser diode, is produced by gaseous phase growth with addition of a group V element as p-type dopant and heat treatment at a high selenium partial pressure
10/26/2000DE19916572A1 Optical semiconductor component with transparent protection layer
10/25/2000EP1047163A2 Semiconductor laser, manufacturing method thereof, semiconductor device and manufacturing method thereof
10/25/2000EP1047120A1 Method of manufacturing an electrode in a semiconductor device
10/25/2000EP1046196A1 Lighting system
10/25/2000CN1271182A Semiconductor luminous device and its making method and method for producing transparent conductor film
10/25/2000CN1271175A Method for cleaning porous body and manufacture the same, non-porous film or keyed lining
10/24/2000US6137819 Optoelectronic semiconductor device
10/24/2000US6137224 Electronic device encapsulated directly on a substrate
10/24/2000US6137121 Integrated semiconductor light generating and detecting device
10/24/2000US6136712 Method and apparatus for improving accuracy of plasma etching process
10/24/2000US6136627 High-resolution light-sensing and light-emitting diode array and fabrication method thereof
10/24/2000US6136626 Device with double hetero structure made of aluminum gallium indium nitride, comprising active layer, n-type cladding layer and p-type cladding layer sandwiching active layer, wherein p-type layer has region containing hydrogen
10/24/2000US6136093 Method of making GaN single crystal and apparatus for making GaN single crystal
10/19/2000WO2000036336A8 Light engine
10/19/2000DE19918651A1 LED, e.g. for displays, lighting and data transmission, has thick epitaxial layers with an active zone delimited by deep separation regions of crystal structure irreversibly damaged by high energy ion irradiation
10/18/2000EP1045459A1 Variable-wavelength light-emitting device and method of manufacture
10/18/2000EP1045458A2 Light source system and display device
10/18/2000EP1045457A2 Quantum well type light-emitting diode
10/18/2000EP1045456A2 Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
10/18/2000EP1045453A2 LED array PCB with adhesive rod lens
10/18/2000EP1045431A1 Method for producing a group III nitride compound semiconductor substrate
10/18/2000EP1045193A1 Lighting device for concentrating axial light with an angled converging reflector
10/18/2000EP1044586A2 Highly transparent non-metallic cathodes
10/18/2000CN1270420A Semiconductor device made of Group III nitrogenous compounds and manufacture thereof
10/17/2000US6133590 Low resistance contact semiconductor diode
10/17/2000US6133589 AlGaInN-based LED having thick epitaxial layer for improved light extraction
10/17/2000US6133588 Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas
10/17/2000US6133058 Fabrication of semiconductor light-emitting device
10/17/2000US6132072 Led assembly
10/17/2000US6131278 Metal substrate having an IC chip and carrier mounting
10/12/2000WO2000060675A1 Optical semiconductor diode
10/12/2000WO2000060648A1 Method of producing an electrical contact on a semiconductor diode and diode with such a contact
10/12/2000WO2000060381A2 Flat panel solid state light source
10/12/2000WO1999066565A9 Method and apparatus for producing group-iii nitrides
10/12/2000DE10006585A1 Housing for light emitting diodes comprises LED arranged in a bowl shaped recess with input and output connections with support having printed circuit with pre etched circuit patterns
10/11/2000EP1043765A1 Thin film forming method, and semiconductor light emitting device manufacturing method
10/11/2000EP1042819A1 Surface-mounted optoelectronic component and method for producing same
10/11/2000EP1042794A1 Process for producing a porous layer by an electrochemical etching process
10/11/2000CN2400904Y Organic electroluminescent device
10/11/2000CN1269598A Manufacture of white and purple light source
10/10/2000US6130446 Blue light emitting diode, laser diode, or light receiving element; aluminum layer, silicon layer, nickel layer and gold layer are laminated in this order on an n-type gallium nitride
10/10/2000US6130445 Semiconductor light-emitting diodes with bragg reflector layer
10/10/2000US6130147 Methods for forming group III-V arsenide-nitride semiconductor materials
10/10/2000US6130143 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130142 Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate
10/10/2000US6130108 Semiconductor laser and manufacturing method therefor
10/10/2000CA2177465C Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
10/05/2000WO2000059084A2 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
10/05/2000WO2000059046A1 Nitride semiconductor device
10/05/2000WO2000059039A1 Semiconductor device
10/05/2000WO2000058999A2 Semiconductor structures having a strain compensated layer and method of fabrication
10/05/2000WO2000058664A1 Luminaire with leds
10/05/2000DE19914718A1 Semiconductor diode surface contact manufacturing method
10/04/2000EP1041650A2 Group III nitride compound semiconductor light-emitting device
10/04/2000EP1041644A2 Transparent and conductive zinc oxide film with low growth temperature
10/04/2000EP1041639A1 Process for fabrication of a planar heterostructure
10/04/2000EP1041610A1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
10/04/2000EP1041609A1 Group III nitride compound semiconductor device and method of producing the same
10/04/2000EP1041419A1 Optical semiconductor module with fiber connection and its assembly process
10/04/2000EP1040527A2 Opto-electronical component for the infrared wavelength range
10/04/2000EP1040526A2 Metal electrical contact for high current density application in led and laser devices
10/04/2000EP1040398A2 Digitally controlled illumination methods and systems
10/04/2000EP0775371B1 Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorous
10/04/2000CN1269056A Robust group III nitride light emitting diode for high reliability in standard applications
10/03/2000US6127783 LED luminaire with electronically adjusted color balance
10/03/2000CA2182591C Semiconductor device
09/2000
09/28/2000WO2000057522A1 Vcsel power monitoring system using plastic encapsulation techniques
09/28/2000WO2000057492A1 Luminescent diode device
09/28/2000WO2000057491A1 Chip light-emitting device
09/28/2000WO2000057490A1 Lamp
09/28/2000WO2000057489A1 Optical signal transmission board and apparatus
09/28/2000WO2000057460A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
09/28/2000DE19911717A1 Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device
09/27/2000EP1039600A2 Semiconductor laser device and method of fabricating the same
09/27/2000EP1039599A2 Semiconductor optical device apparatus
09/27/2000EP1039596A2 Semiconductor light emitting device and method for manufacturing the same
09/27/2000EP1039555A1 Group III nitride compound semiconductor device
09/27/2000EP1039517A2 Method of cleaning porous body, and process for producing porous body, non-porous film or bonded substrate
09/27/2000EP1039325A2 Receiving system for free-space optical communications
09/27/2000EP1038056A1 A method of growing a buffer layer using molecular beam epitaxy
09/27/2000CN1268256A Light absorbing layer for II-VI semiconductor light emitting devices
09/27/2000CN1268250A Light emitting device and display device
09/26/2000US6124147 Alternately forming a silicon carbide and an aluminum nitride epitaxial film on a substrate, using a single source gas of 1,3-disilanebutane in an nitrogen plasma assited metalorganic molecular beam epitaxiy system; applying heat treatment
09/26/2000US6123768 Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
09/25/2000CA2300353A1 Receiving system for free-space optical communications
09/21/2000WO2000055926A1 Light-emitting semiconductor chip
09/21/2000WO2000055925A1 Opto-electronic element
09/21/2000WO2000055915A1 Web process interconnect in electronic assemblies
09/21/2000WO2000055914A1 Semiconductor radiation emitter package
09/21/2000WO2000055685A1 Indicators and illuminators using a semiconductor radiation emitter package
09/21/2000WO2000054655A1 Variable multiple color led illumination system
09/21/2000DE10006164A1 Display for use in printing processes
09/21/2000CA2367484A1 Variable multiple color led illumination system
09/20/2000CN2397607Y Controllable zone current density luminous diode
09/20/2000CN2397606Y Induction type luminous diode
09/20/2000CN1267109A Chip bonded Al-Ca-In-N structure
09/20/2000CN1267108A Electronic Bragg reflector and its application in LED
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