| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 02/10/2000 | CA2338993A1 Lead frame attachment for optoelectronic device |
| 02/09/2000 | EP0979024A1 Control circuit for electrolumiscent diodes |
| 02/09/2000 | EP0978798A2 Method of pulsing light emitting diodes for reading fluorescent indicia, data reader, and system |
| 02/09/2000 | EP0978147A2 SEMICONDUCTOR DEVICE COMPRISING P-TYPE ZnMgSSe LAYER |
| 02/09/2000 | CN1244027A Method for transferring miniature machined block including integrated circuits |
| 02/08/2000 | US6023546 Structure for securing optical device and fiber optics |
| 02/08/2000 | US6023414 Display device mounting arrangement and method |
| 02/08/2000 | US6023354 Semiconductor Bragg reflector and a method of fabricating said reflector |
| 02/08/2000 | US6023077 Multilayer |
| 02/08/2000 | US6023076 Group III nitride compound semiconductor light emitting device having a current path between electrodes |
| 02/08/2000 | US6022155 Driver IC and print head |
| 02/03/2000 | WO2000005758A1 Electronic component and method for the production thereof |
| 02/03/2000 | DE19933552A1 Photonic semiconductor device, e.g. an LED or laser diode, comprises an indium gallium aluminum nitride semiconductor layer on a ZnO buffer layer of controlled c-axis lattice constant |
| 02/03/2000 | DE19932201A1 Photonic semiconductor device, e.g. an LED or laser diode, comprises an indium gallium aluminum nitride semiconductor layer on a zinc oxide buffer layer which is free of the semiconductor constituents |
| 02/03/2000 | DE19911701A1 Aluminium gallium indium phosphide (AlGaInP) light emitting device |
| 02/02/2000 | EP0977286A2 Electron-injecting layer providing a modified interface between an organic light-emitting structure and a cathode buffer layer |
| 02/02/2000 | EP0977280A2 Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| 02/02/2000 | EP0977279A2 AlGalnN LED and laser diode structures |
| 02/02/2000 | EP0977278A2 Substrate-fluorescent LED |
| 02/02/2000 | EP0977277A1 Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
| 02/02/2000 | EP0977276A1 Semiconductor device cleave initiation |
| 02/02/2000 | EP0977074A2 An integrated optics chip with reduced thermal errors due to pyroelectric effects |
| 02/02/2000 | EP0977064A1 a socket and a system for optoelectronic interconnection and a method of fabricating such socket and system |
| 02/02/2000 | EP0977063A1 A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system |
| 02/02/2000 | EP0976589A1 Luminescent diode |
| 02/02/2000 | EP0976162A1 Recovery of surface-ready silicon carbide substrates |
| 02/02/2000 | EP0976161A1 Optoelectronic semiconductor diodes and devices comprising same |
| 02/01/2000 | US6020632 Electronic component including an adjustable cap |
| 02/01/2000 | US6020602 Light emitting zone; n-p-n junction; stacked structure |
| 02/01/2000 | US6020601 Semiconductor light-emitting device |
| 02/01/2000 | CA2170922C Compound semiconductor light emitting device and method of preparing the same |
| 01/27/2000 | WO2000004593A1 Optical devices |
| 01/27/2000 | WO2000003950A1 Optical devices |
| 01/27/2000 | DE19833039A1 Opto-electronic components encapsulated in transparent plastic to make e.g. displays, are rear-injected individually through holes in substrate to prevent undesirable segment cross-illumination |
| 01/26/2000 | EP0975073A1 Semiconductor laser |
| 01/26/2000 | EP0975027A2 Light emitting device and process for producing the same |
| 01/26/2000 | EP0975013A2 Method of manufacturing an oxide layer on a GaAs-based semiconductor body |
| 01/26/2000 | EP0974485A2 Signal lamp for vehicle |
| 01/26/2000 | EP0974220A2 Electrical device |
| 01/25/2000 | US6018357 LED printer and drive method having an energy distribution flattening function |
| 01/25/2000 | US6018167 Light-emitting device |
| 01/25/2000 | US6017811 Stain etching crystalline semiconductor substrate with solution comprising acid, water, and oxidizing agent to form porous region having interstices; forming electrically conductive contact structure to create semiconductor |
| 01/25/2000 | US6017807 Forming p-type gallium nitride layer which is doped with p-type dopants; thermally annealing while supplying flow of inert gas |
| 01/25/2000 | US6017774 Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor |
| 01/25/2000 | US6017773 Stabilizing process for porous silicon and resulting light emitting device |
| 01/20/2000 | WO2000003230A1 Photoluminescent semiconductor materials |
| 01/20/2000 | DE19931149A1 Optical semiconductor device, especially an optoelectronic integrated circuit for wideband optical communications, comprises a zinc oxide film between a gallium arsenide substrate and a gallium nitride-based light emitting-receiving layer |
| 01/20/2000 | DE19929165A1 Light emitting diode array for optical printer |
| 01/20/2000 | DE19827198A1 Single crystal aluminum nitride layers, useful as high frequency SAW filters and buffer layers for electronic and optoelectronics component deposition, are grown on silicon using silicon surface construction and reconstruction steps |
| 01/20/2000 | CA2383952A1 Photoluminescent semiconductor materials |
| 01/19/2000 | EP0973207A2 Semiconductor light emitting device |
| 01/19/2000 | EP0972310A1 Method for fabricating low-resistance contacts on nitride semiconductor devices |
| 01/19/2000 | CN1241821A White color light emitting diode and neutral color light emitting diode |
| 01/19/2000 | CN1241820A Method of activating compound semiconductor layer to P-type compound semiconductor layer |
| 01/18/2000 | US6015979 Nitride-based semiconductor element and method for manufacturing the same |
| 01/18/2000 | US6015719 Transparent substrate light emitting diodes with directed light output |
| 01/18/2000 | US6015631 Luminescent compound for an electroluminescence display device |
| 01/13/2000 | WO2000002421A1 Circuit arrangement and signalling light provided with the circuit arrangement |
| 01/13/2000 | WO2000002263A1 Infrared light emitting diodes |
| 01/13/2000 | WO2000002262A1 Radiation-emitting and/or -receiving component |
| 01/13/2000 | WO2000002261A1 Light source for generating a visible light |
| 01/13/2000 | DE19829197A1 Strahlungsaussendendes und/oder empfangendes Halbleiter-Bauelement Radiation-emitting and / or receiving semiconductor component |
| 01/13/2000 | CA2336609A1 Infrared light emitting diodes |
| 01/12/2000 | EP0971421A2 White color light emitting diode and neutral color light emitting diode |
| 01/12/2000 | EP0874964A4 An led illuminated lamp assembly |
| 01/11/2000 | US6014395 Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device |
| 01/11/2000 | US6014202 Optical system for transmitting a graphical image |
| 01/11/2000 | US6013539 Edge emitting led and method of forming the same |
| 01/06/2000 | WO2000001046A1 Light source control device |
| 01/06/2000 | WO2000001017A2 Metal electrical contact for high current density application in led and laser devices |
| 01/06/2000 | WO2000001014A1 Method for producing and separating semiconductor light-emitting diodes |
| 01/06/2000 | CA2335950A1 Light source control device |
| 01/05/2000 | EP0969524A1 Light emitter |
| 01/05/2000 | EP0969517A1 Electrode for use in electro-optical devices |
| 01/05/2000 | DE19828970A1 Verfahren zur Herstellung und Vereinzelung von Halbleiter-Lichtemissionsdioden Process for the preparation and separation of semiconductor light emitting diodes |
| 01/05/2000 | CN1240537A Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
| 01/05/2000 | CN1240304A GaN monocrystal substrate and making method thereof |
| 01/04/2000 | US6010796 Electroluminescent device |
| 01/04/2000 | US6010231 Light source holding device |
| 01/04/2000 | US6009712 Temperature controller of optical module package |
| 12/30/1999 | DE19854899C1 Lighting unit for automobile |
| 12/29/1999 | WO1999057788A3 Light emitting semiconductor device |
| 12/29/1999 | EP0967664A1 Gallium nitride single crystal substrate and method of producing the same |
| 12/29/1999 | EP0967590A1 Optical display device using LEDs and its operating method |
| 12/29/1999 | EP0966766A2 A?iii -nitride channeled led |
| 12/29/1999 | CN2356424Y Safety diode indicating lamp |
| 12/28/1999 | US6009218 Vertical positioning of an optoelectronic component on a support relative to an optical guide integrated into said support |
| 12/28/1999 | US6009113 Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same |
| 12/28/1999 | US6009112 Semiconductor laser and manufacturing method therefor |
| 12/28/1999 | US6008833 Light-emitting device and image forming apparatus using the same |
| 12/28/1999 | US6008539 Multilayer |
| 12/28/1999 | US6008525 Semiconductor and passivation layer |
| 12/28/1999 | US6008507 Photoelectric semiconductor device having a GaAsP substrate |
| 12/28/1999 | US6008506 SOI optical semiconductor device |
| 12/28/1999 | US6008066 Method of manufacturing a light emitting diode to vary band gap energy of active layer |
| 12/23/1999 | WO1999066613A1 High power semiconductor light source |
| 12/23/1999 | WO1999066612A1 Superluminescent diode and optical amplifier with wavelength stabilization using wdm couplers and back output light |
| 12/23/1999 | WO1999066565A1 Method and apparatus for producing group-iii nitrides |
| 12/23/1999 | WO1999066564A1 Light emitting diode having encapsulated microsphere lens |
| 12/23/1999 | WO1999066482A1 Display |