| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 03/30/2000 | DE19932880A1 Verfahren zur Herstellung von Nanometerstrukturen auf Halbleiteroberflächen A process for producing nanometer structures on semiconductor surfaces |
| 03/30/2000 | CA2344809A1 An optical fiber and an optical component |
| 03/30/2000 | CA2344067A1 Connector for an optical plug connection and method for producing the connector |
| 03/29/2000 | EP0989778A1 Substrate for patterning thin film and surface treatment thereof |
| 03/29/2000 | EP0989617A2 Semiconductor light emitting device and method for adjusting the luminous intensity thereof |
| 03/29/2000 | EP0989577A2 Field emission electron source |
| 03/29/2000 | EP0989539A1 True color flat panel display using LED dot matrix and LED dot matrix drive method and apparatus |
| 03/29/2000 | EP0988671A1 Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| 03/29/2000 | CN1248799A High-brightness LED |
| 03/29/2000 | CN1050936C Light source and technique for mounting LED |
| 03/28/2000 | US6044184 Integrated optics chip with reduced thermal errors due to pyroelectric effects |
| 03/28/2000 | US6043985 Thermal connecting structure for connecting materials with different expansion coefficients |
| 03/28/2000 | US6043800 Head mounted liquid crystal display system |
| 03/28/2000 | US6043514 Substrate containing an oxide having a calcium carbide crystal structure, and a nitride semiconductor layer epitaxially grown on the substrate; substrate selected for good lattice-match to a nitride semiconductor |
| 03/28/2000 | US6043509 Diode with plurality of heterojunctions; p-type gallium arsenide substrate and four epitaxial layers of aluminum gallium arsenide where the mixed crystal ratios of aluminum to arsenic of the layers satisfy a given condition |
| 03/28/2000 | US6043481 Optoelectronic array device having a light transmissive spacer layer with a ridged pattern and method of making same |
| 03/28/2000 | US6043443 Fabrication of semiconductor devices |
| 03/28/2000 | US6043140 Method for growing a nitride compound semiconductor |
| 03/28/2000 | CA2030368C Light-emitting diode having light reflecting layer |
| 03/23/2000 | WO2000016455A1 Semiconductor luminous element and semiconductor laser |
| 03/23/2000 | WO2000016411A1 Semiconductor light-emitting device and method for manufacturing the same |
| 03/23/2000 | WO2000016383A1 Method for forming compound semiconductor layer and compound semiconductor device |
| 03/23/2000 | WO2000016382A1 Low temperature formation of backside ohmic contacts for vertical devices |
| 03/23/2000 | WO2000016378A2 Method of fabricating group-iii nitride-based semiconductor device |
| 03/23/2000 | DE19927945A1 Semiconductor light emitting device, comprises emission layer between n-type and p-type layers, which emits visible light, and n- and p-type contacts connected to respective layers |
| 03/23/2000 | CA2343416A1 Low temperature formation of backside ohmic contacts for vertical devices |
| 03/22/2000 | EP0987770A1 Semiconductor light-emitting diode |
| 03/22/2000 | EP0987741A1 Method for relieving stress in GaN devices |
| 03/22/2000 | CN2369905Y Character luminous motor vehicle license |
| 03/22/2000 | CN1247997A Optical transmitting device having reflecting contact layer with fine picture |
| 03/21/2000 | US6040590 Semiconductor device with electrostatic control |
| 03/21/2000 | US6040588 Semiconductor light-emitting device |
| 03/16/2000 | WO2000001017A3 Metal electrical contact for high current density application in led and laser devices |
| 03/16/2000 | DE19941875A1 Low cost photonic III-V compound semiconductor device, e.g. an LED or laser diode for blue to UV light emission, has a silicon dioxide film between a silicon substrate and a zinc oxide buffer film |
| 03/16/2000 | DE19840436A1 LED, especially a powerful red to yellowish green emitting aluminum gallium indium phosphide LED, has upper cladding structure including thin high ohmic layer |
| 03/15/2000 | EP0986151A2 Semiconductor light emitting device and method for producing the same |
| 03/15/2000 | EP0985945A2 Method of manufacturing optical module |
| 03/15/2000 | EP0985944A1 Package for optoelectronic components |
| 03/15/2000 | EP0985235A1 Method for producing a light-emitting component |
| 03/15/2000 | EP0985007A1 Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
| 03/15/2000 | CN2369358Y Deformable light emitting diode |
| 03/15/2000 | CN1247638A II-VI semiconductor device with bete buffer layer |
| 03/15/2000 | CN1247637A Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device |
| 03/15/2000 | CN1247387A Semiconductor device and packed articles and mfg. method |
| 03/14/2000 | USRE36614 Modular surface mount component for an electrical device or LED's |
| 03/14/2000 | US6038387 Method for optical design of lighting equipment utilizing light-emitting devices |
| 03/14/2000 | US6037612 Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon |
| 03/14/2000 | US6037603 Opto-electronic device with transparent high lateral conductivity current spreading layer |
| 03/14/2000 | US6037188 Method of manufacturing photosensitive semiconductor device |
| 03/09/2000 | WO2000013273A1 Semiconductor device and substrate for semiconductor device |
| 03/09/2000 | WO2000013239A1 METHOD FOR PRODUCING A PLURALITY OF Ga(In,Al)N-LUMINESCENT DIODE CHIPS |
| 03/09/2000 | WO2000012649A1 Phosphor powders, methods for making phosphor powders and devices incorporating same |
| 03/09/2000 | DE19919944A1 Anordnung mit lichtemittierenden Dioden mit einem integrierten Schutz vor einer elektrostatischen Entladung Arrangement with light-emitting diodes with an integrated protection against electrostatic discharge |
| 03/09/2000 | DE19919381A1 Mehrfachverkapselung von Phosphor-LED-Bauelementen Mehrfachverkapselung of phosphorus-LED devices |
| 03/09/2000 | DE19845229C1 White light background lighting system, especially for flat displays, comprises blue-emitting LED chips and a diffuser foil with a coating containing a blue-to-white light conversion powder |
| 03/07/2000 | US6034983 Method of fabricating compound semiconductor device and optical semiconductor device |
| 03/07/2000 | US6034380 Electroluminescent diode with mode expander |
| 03/07/2000 | US6033929 Method for making II-VI group compound semiconductor device |
| 03/07/2000 | US6033928 Etching a silicon substrate using said dotted mask so as to form a first number of semiconductor micro-needles |
| 03/07/2000 | US6033927 Method for separating a substrate of a group III nitride semiconductor light-emitting device |
| 03/07/2000 | US6033490 Growth of GaN layers on quartz substrates |
| 03/07/2000 | CA2279837A1 Package for optoelectronic components |
| 03/07/2000 | CA2166750C Passive optical network having amplified led transmitters |
| 03/02/2000 | WO2000011727A1 Edge emitter and method for the production thereof |
| 03/02/2000 | DE19939471A1 Aluminum gallium indium phosphide LED especially for red to green light emission comprises current diffusion layer having a very low lattice mismatch with respect to a light-emitting structure |
| 03/02/2000 | DE19938480A1 Photonic semiconductor device, especially an LED, laser diode or photodiode, comprises an indium, gallium and/or aluminum nitride semiconductor layer on a Z-cut quartz substrate |
| 03/02/2000 | DE19838810A1 Verfahren zum Herstellen einer Mehrzahl von Ga(In,Al)N-Leuchtdiodenchips A method of manufacturing a plurality of Ga (In, Al) N light emitting diode chips |
| 03/02/2000 | DE19837221A1 Kantenemitter und Verfahren zur Herstellung desselben Edge emitters and methods of manufacturing the same |
| 03/01/2000 | EP0982819A1 Epitaxial facet formation for laser diodes based on III-V material systems |
| 03/01/2000 | EP0982532A2 A lamp comprising a light emitting diode |
| 03/01/2000 | CN1245979A Semiconductor light emitting diode |
| 02/29/2000 | US6031856 Method, article of manufacture, and optical package for eliminating tilt angle between a header and an optical emitter mounted thereon |
| 02/29/2000 | US6031855 Light emitting element driving circuit and light emitting device having the same |
| 02/29/2000 | US6031252 Epitaxial wafer and method of preparing the same |
| 02/29/2000 | US6031244 Luminescent semiconductor device with antidiffusion layer on active layer surface |
| 02/29/2000 | US6030886 Growth of GaN on a substrate using a ZnO buffer layer |
| 02/29/2000 | US6030848 Method for manufacturing a GaN-based compound semiconductor light emitting device |
| 02/29/2000 | US6030700 Multicolor light emitting device comprises first and second organic devices stacked one upon the other to form layered structure with each separated from others by conductive layer to enable each to receive separate bias potential |
| 02/23/2000 | EP0981214A2 Optical transmitter |
| 02/23/2000 | EP0981168A2 Semiconductor micro-optical components and method for producing them |
| 02/23/2000 | EP0980590A2 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| 02/23/2000 | CN1245352A White LED with energy-level spacing of photoelectric conversion and its manufacture method |
| 02/22/2000 | US6027989 Bandgap tuning of semiconductor well structure |
| 02/22/2000 | US6027952 Method of manufacturing a string of electrically connected light emitting diodes |
| 02/22/2000 | US6027666 Fast luminescent silicon |
| 02/17/2000 | WO2000008691A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 02/16/2000 | EP0980099A1 Multichip module |
| 02/16/2000 | EP0979969A2 LED lamp |
| 02/16/2000 | EP0979882A1 Method of manufacturing a nitride series III-V group compound semiconductor |
| 02/16/2000 | CN1244832A Injection molding encapsulation for an electronic device directly onto a substrate |
| 02/15/2000 | US6025858 Recording head and image forming apparatus using the same |
| 02/15/2000 | US6025566 Signaling device with light emitting diode |
| 02/15/2000 | US6025251 Method for producing a plurality of semiconductor components |
| 02/15/2000 | US6025213 Semiconductor light-emitting device package and method of manufacturing the same |
| 02/15/2000 | US6024794 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination |
| 02/15/2000 | US6024466 Electronic parts holder |
| 02/10/2000 | WO2000007247A1 Lead frame attachment for optoelectronic device |
| 02/10/2000 | WO2000007221A2 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 02/10/2000 | DE19931300A1 Photonic semiconductor device, e.g. an LED or laser diode, comprises an indium gallium aluminum nitride semiconductor layer on a c-axis aligned zinc oxide buffer layer |
| 02/10/2000 | DE19835392A1 Ansteuerschaltung für Leuchtdioden A drive circuit for LEDs |