Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
05/1999
05/25/1999US5907162 Light-emitting device and method for manufacturing the same
05/25/1999US5907151 Surface mountable optoelectronic transducer and method for its production
05/20/1999WO1999025031A1 Light emitting element having an optical element molded in a surface thereof
05/20/1999WO1999025030A1 Semiconductor substrate and method for making the same
05/20/1999WO1999025028A1 Polymer-nanocrystal photo device and method for making the same
05/19/1999EP0917213A1 Self-scanning light-emitting element array
05/19/1999EP0917212A1 Self-scanning light-emitting element array
05/19/1999EP0917208A1 Polymer-nanocrystal photo device and method for making the same
05/19/1999EP0916750A1 Single crystal SiC and a method of producing the same
05/19/1999CN1216868A Photoelectron elements and method for mfg. same
05/19/1999CN1216742A Circuit with luminescent diode, and indicating light for motor vehicle contg. same
05/18/1999US5905276 Light emitting semiconductor device using nitrogen-Group III compound
05/18/1999US5905275 Gallium nitride compound semiconductor light-emitting device
05/18/1999US5904994 Oxazole, imidazole, quinoline and pyrazine compounds; white light emitters
05/18/1999US5904549 Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs
05/18/1999US5904545 Apparatus for fabricating self-assembling microstructures
05/14/1999WO1999023693A1 GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME
05/14/1999WO1999010936A3 Robust group iii nitride light emitting diode for high reliability in standard applications
05/12/1999EP0812485B1 Bandgap tuning of semiconductor well structure
05/12/1999CN2318712Y Improved luminous diode
05/11/1999US5903589 Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device
05/11/1999US5903583 Diode laser component with cooling element and diode laser module
05/11/1999US5903017 Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
05/11/1999US5902393 Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
05/06/1999WO1999021711A1 Multi-layered coated substrate and method of production thereof
05/06/1999WO1999013499A3 In-situ acceptor activation in group iii-v nitride compound semiconductors
05/06/1999EP0913005A1 BLUE AND DEEP BLUE LASER STRUCTURE LATTICE-MATCHED TO AN InP SUBSTRATE
05/06/1999DE19755051C1 Method of applying quantum points to surfaces for manufacturing semiconductors
05/06/1999DE19747433A1 Semiconductor LED has a reflection reducing quarter wavelength layer stack of semiconductor materials
05/05/1999CN1216134A Current-driven emissive display device, method for driving same, and method for mfg. same
05/05/1999CN1216002A Method for treating pathological conditions of tissues with non-coherent radiation and device therefor
05/05/1999CN1215931A Light emitting diode device and its mfg. method
05/04/1999US5901165 Excellent in confinement of charge carriers and in temperature characteristics
05/04/1999US5900650 Using a sapphire substrate, easy to manufacture
05/04/1999US5900647 Reducing the grating defect in a layer of the gallium nirtide; realizes laser oscillation
05/04/1999US5900642 Semiconductor light emitting device
04/1999
04/29/1999WO1999020816A1 Method for producing a gallium nitride epitaxial layer
04/28/1999EP0911929A2 Semiconductor laser and method for manufacturing the same
04/28/1999EP0911888A2 Light emitting semiconductor device using group III nitrogen compound
04/28/1999EP0911887A2 Light-emitting diode device and method for fabricating the same
04/28/1999EP0911886A2 Optoelectronic device and manufacturing method
04/28/1999EP0911573A2 Automated system and method for manufacturing an led light strip having an integrally formed connector
04/28/1999EP0544795B1 Semiconductive copolymers for use in luminescent devices
04/28/1999CN2316724Y Electro-semiconductor light-projector
04/28/1999CN1215503A Light emitting element, semiconductor light emitting device, and method for manufacturing them
04/28/1999CN1215500A Transparent contacts for organic devices
04/28/1999CN1215239A Semiconductor laser and making method thereof
04/28/1999CN1215232A LED and its making method
04/27/1999US5898806 Optical interconnection circuit structure
04/27/1999US5898662 Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus
04/27/1999US5898267 Parabolic axial lighting device
04/27/1999US5898192 Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface
04/27/1999US5898191 Array of optical integrated devices with micro-lenses
04/27/1999US5898190 P-type electrode structure and a semiconductor light emitting element using the same structure
04/27/1999US5898185 Hybrid organic-inorganic semiconductor light emitting diodes
04/27/1999US5897329 Epitaxial growth of oxidizible and nonoxidizible layers; moification of oxidizing layer forming barrier to control lateral extent of oxidation
04/22/1999WO1999020081A2 Highly transparent non-metallic cathodes
04/21/1999EP0909972A2 Method of forming a high resolution liquid crystal display device
04/21/1999CN1214803A Semiconductor integrated circuit
04/21/1999CN1214800A LED matrix
04/20/1999US5896093 L.E.D. light assembly for traffic arrowboards
04/20/1999US5895938 Semiconductor device using semiconductor BCN compounds
04/20/1999US5895932 Gan layer, photoluminescent material comprising a host material doped with dye molecules, wherein said host material is coumarin 6 doped with dcm or alq
04/20/1999US5895706 Epitaxial structure for GaP light-emitting diode
04/20/1999US5895302 Method for making a heat-resistant reflector for LED display suitable for surface mounting
04/20/1999US5895225 Semiconductor light-emitting device and production method thereof
04/20/1999CA2248743A1 Automated system and method for manufacturing an led light strip having an integrally formed connector
04/15/1999WO1999018617A1 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
04/14/1999EP0908988A2 Light-emitting device and fabricating method thereof
04/14/1999EP0908959A2 Semiconductor diode
04/14/1999EP0908953A1 Light emitting element module and chip
04/14/1999EP0907971A1 Diode-addressed colour display with molecular phosphor
04/14/1999EP0907970A1 White light-emitting diode
04/14/1999EP0907969A1 Light-emitting semiconductor component with luminescence conversion element
04/14/1999CN2314546Y Flat electroluminescence element
04/14/1999CN1213863A Nitrided gallium III-V group compound semiconductor device and its mfg.method
04/14/1999CN1213756A Method of producing various colours light by means of exciting electronic energy glass transition and products of using same
04/13/1999US5894196 Angled elliptical axial lighting device
04/13/1999US5894195 Elliptical axial lighting device
04/13/1999US5893633 Light-emitting apparatus and method of producing the same
04/08/1999WO1998054930A3 Uv/blue led-phosphor device with enhanced light output
04/08/1999DE19845477A1 Light emitting semiconductor device
04/07/1999EP0906948A1 Electroluminescent devices
04/07/1999EP0906770A1 Method for treating pathological conditions of tissues with non-coherent radiation and device therefor
04/07/1999CN1213199A Method of fabricating semiconductor laser
04/07/1999CN1212989A Powder porasil and its hydrothermal preparation method
04/07/1999CA2245399A1 Electroluminescent diode with mode expander
04/06/1999US5892787 N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
04/06/1999US5892784 N-drive p-common surface emitting laser fabricated on n+ substrate
04/06/1999US5892278 Aluminum and aluminum alloy radiator for semiconductor device and process for producing the same
04/06/1999US5891790 Method for the growth of P-type gallium nitride and its alloys
04/01/1999WO1999016136A1 Optical irradiation device
04/01/1999WO1999016135A1 Electroluminescent device
04/01/1999WO1999016133A1 Optical module and lead frame for optical module
04/01/1999WO1999002026A3 Fluorescent dye added to epoxy of light emitting diode lens
04/01/1999DE19741609A1 Semiconductor layer assembly for lateral current propagation in LED manufacture
04/01/1999DE19741442A1 Semiconductor especially radiation emitting chips are produced from a wafer
04/01/1999DE19741333A1 Elektrolumineszierende Anordnung Electroluminescent arrangement
04/01/1999CA2304166A1 Optical irradiation device
04/01/1999CA2272615A1 Optical module and lead frame for optical module