| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 08/09/2000 | CN1262539A Technology for making luminous element of optical ridge waveguide semiconductor |
| 08/09/2000 | CN1262528A Process for preparing indium aluminium gallium nitrogen optical transmitting set by removing substrate |
| 08/08/2000 | US6100913 Method of correcting the amounts of emitted light |
| 08/08/2000 | US6100595 Semiconductor device having optoelectronic remote signal-exchange means |
| 08/08/2000 | US6100586 The electrical contact comprises a layer of p-type gallium nitride, a metal layer, and an intermediate layer sandwiched between above two layer and including layers of differnt group 3 to 5 semiconduictors with prefered energy levels |
| 08/08/2000 | US6100546 Bandgap light emitting materials, comprising gallium aresinide nitride and indium arsenide-nitiride, useful for semiconductor lasers with different emission wavelength within the lightwave spectrum from ultraviolet to infrared |
| 08/08/2000 | US6100545 GaN type semiconductor device |
| 08/08/2000 | US6100544 Second cladding layer with graded aluminum-gallium-indium-phosphide gradually changing from being lattice-matched to lattice-mismatched with semiconductor substrate |
| 08/08/2000 | US6100174 GaN group compound semiconductor device and method for producing the same |
| 08/08/2000 | US6100106 Fabrication of nitride semiconductor light-emitting device |
| 08/08/2000 | US6100105 Fabrication of InGaAlN based compound semiconductor device |
| 08/08/2000 | US6100104 Method for fabricating a plurality of semiconductor bodies |
| 08/08/2000 | US6100103 Highly integrated multicolor light emitting device and a method for manufacturing the same |
| 08/08/2000 | US6099970 Electrically conductive material is formed from a plurality of quantum wells where at least one of said quantum wells is formed of a layer of gallium nitride sandwiched between layers of aluminum gallium nitride |
| 08/08/2000 | CA2054853C Semiconductor device having reflecting layer |
| 08/03/2000 | WO2000045443A1 High performance light emitting diodes |
| 08/03/2000 | DE19902750A1 Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung A semiconductor device for generating mixed-color electromagnetic radiation |
| 08/03/2000 | DE10003065A1 Light emitting semiconductor device, especially LED, production comprises low rate growth of a highly mismatched layer on an upper cladding layer |
| 08/02/2000 | EP1024539A2 Solid state based illumination source utilizing dichroic reflectors |
| 08/02/2000 | EP1024399A1 Projector light source utilizing a solid state green light source |
| 08/02/2000 | EP1024398A1 Solid state based illumination source for a projection display |
| 08/02/2000 | EP0783808B1 Optical transmitter and transceiver module for wireless data transmission |
| 08/01/2000 | US6097743 Superluminescent diode and optical amplifier with wavelength stabilization using WDM couplers and back output light |
| 08/01/2000 | US6097360 Analog driver for LED or similar display element |
| 08/01/2000 | US6097159 Drive circuit of light emitting element |
| 08/01/2000 | US6097041 Light-emitting diode with anti-reflector |
| 08/01/2000 | US6097040 Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| 08/01/2000 | US6096617 Preventing the formation of free atomic hydrogen by changing the first growth temperature to a second growth temperature under an alkylarsine |
| 08/01/2000 | US6096130 Method of crystal growth of a GaN layer over a GaAs substrate |
| 08/01/2000 | US6095666 Light source |
| 07/27/2000 | WO2000044053A1 Semiconductor component for generating mixed-color electromagnetic radiation |
| 07/27/2000 | WO2000021144A3 VERTICAL GEOMETRY InGaN LED |
| 07/27/2000 | DE19944020A1 Verbesserte Halbleiterbauelemente aus passivierten III-V-Materialien mit hohem Aluminiumgehalt Improved semiconductor devices from passivated III-V materials with high aluminum content |
| 07/26/2000 | EP1022825A1 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device |
| 07/26/2000 | EP1022787A1 Method of producing a surface-mountable optical element |
| 07/26/2000 | EP1021817A1 Fluorescent dye added to epoxy of light emitting diode lens |
| 07/26/2000 | CN1261462A Beam-emitting opto-electronic component |
| 07/25/2000 | US6094007 Optical tracking system |
| 07/25/2000 | US6093965 Gallium nitride-based III-V group compound semiconductor |
| 07/25/2000 | US6093941 Photonic silicon on a transparent substrate |
| 07/25/2000 | US6093940 Light-emitting diode chip component and a light-emitting device |
| 07/19/2000 | EP1020935A2 Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| 07/19/2000 | EP1020933A1 Photocoupler device, method for fabricating the same, and lead frame for photocoupler device |
| 07/19/2000 | EP1020510A1 Organic electroluminescence element |
| 07/19/2000 | EP1019970A1 Optical irradiation device |
| 07/19/2000 | EP0852815B1 Process of manufacturing an optoelectronic semiconductor device |
| 07/19/2000 | CN2388710Y Colour-changing light-emitting diode device |
| 07/19/2000 | CN2388709Y Light-emitting diode |
| 07/19/2000 | CN1260600A Silicon-base dual potential barrier structure tunnel tuminous diode and its manufacture method |
| 07/19/2000 | CN1260506A Light-emitting-diode array heads positioning method and image forming apparatus |
| 07/19/2000 | CN1260501A Light transmittint-receiving assembly |
| 07/19/2000 | CN1054704C Light-emitting diode array and method for fabricating same |
| 07/18/2000 | US6091139 Semiconductor device |
| 07/18/2000 | US6091085 GaN LEDs with improved output coupling efficiency |
| 07/18/2000 | US6091084 Semiconductor light emitting device |
| 07/18/2000 | US6091083 Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface |
| 07/18/2000 | US6091069 Infrared optical system |
| 07/18/2000 | US6090637 Fabrication of II-VI semiconductor device with BeTe buffer layer |
| 07/18/2000 | US6090300 Etch depth is controlled by the energy, mass and dose of the implanted ions. |
| 07/13/2000 | WO2000041249A1 Light emitting diode and its manufacturing method |
| 07/13/2000 | WO2000041221A2 Method and device for shaping surfaces of semiconductors |
| 07/13/2000 | WO2000017642A3 Biological applications of semiconductor nanocrystals |
| 07/12/2000 | EP1018770A1 Compound semiconductor device based on gallium nitride |
| 07/12/2000 | EP1018170A1 Light-emitting diode |
| 07/12/2000 | EP1018169A2 Robust group iii nitride light emitting diode for high reliability in standard applications |
| 07/12/2000 | EP1018167A1 THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A 3?B 5? OF p- AND n-TYPE ELECTRIC CONDUCTIVITY |
| 07/12/2000 | EP1017735A1 Compounds for electronic devices |
| 07/12/2000 | EP0800563B1 Polymers for use in optical devices |
| 07/12/2000 | CN1054470C Light emitting diode and process for fabricating the same |
| 07/11/2000 | US6088375 Semiconductor device comprising p-type ZnMgSSe layer |
| 07/11/2000 | US6087725 Low barrier ohmic contact for semiconductor light emitting device |
| 07/11/2000 | US6087681 GaN semiconductor light emitting device having a group III-V substrate |
| 07/11/2000 | US6087680 Led device |
| 07/11/2000 | US6087197 Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same |
| 07/11/2000 | US6087195 Method and system for manufacturing lamp tiles |
| 07/11/2000 | US6087194 Composite unit of optical semiconductor device and supporting substrate and method for mounting optical semiconductor device on supporting substrate |
| 07/06/2000 | WO2000039860A1 Injection non-coherent emitter |
| 07/06/2000 | WO2000016378A3 Method of fabricating group-iii nitride-based semiconductor device |
| 07/06/2000 | DE19957312A1 Double heterostructure light emitting diode useful for displays and light sources in optical communications, has a barrier layer between a light emitting layer and one or both cladding layers |
| 07/06/2000 | DE19844701C1 Verfahren zur Justage eines optoelektronischen Bauelements sowie Bauelement Method for adjusting an optoelectronic component, and component |
| 07/06/2000 | CA2358897A1 Injection non-coherent emitter |
| 07/05/2000 | EP1017118A2 Organic electroluminescent element and production method thereof |
| 07/05/2000 | EP1017113A1 Nitride semiconductor device |
| 07/05/2000 | EP1017112A2 *Light emitting device and display* |
| 07/05/2000 | EP1017111A2 Light emitting device and display |
| 07/05/2000 | EP1016266A1 Optical system for transmitting a graphical image |
| 07/05/2000 | EP1015220A1 Injection molding encapsulation for an electronic device directly onto a substrate |
| 07/05/2000 | CN2386535Y Enclosing device for light-emitting diode |
| 07/05/2000 | CN2386534Y Enclosing device for light-emitting diode |
| 07/04/2000 | US6084899 Semiconductor light emitting device and manufacturing method |
| 07/04/2000 | US6084252 Semiconductor light emitting device |
| 07/04/2000 | US6084251 Semiconductor light emitting device with carrier diffusion suppressing layer |
| 07/04/2000 | US6084250 White light emitting diode |
| 07/04/2000 | US6083769 Method for producing a light-emitting diode |
| 06/29/2000 | WO2000038284A1 Method for wavelength compensation in semiconductor manufacturing |
| 06/29/2000 | WO2000038250A1 Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
| 06/29/2000 | WO2000037904A1 Led luminaire |
| 06/29/2000 | WO2000037314A1 Ir diode based high intensity light |
| 06/29/2000 | WO1999066613A9 High power semiconductor light source |
| 06/29/2000 | CA2356530A1 Efficient solid-state light emitting device with excited phosphors for producing a visible light output |