| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 05/31/2001 | US20010002048 Light-emitting device using group III nitride group compound semiconductor |
| 05/31/2001 | CA2360502A1 Optical semiconductor device with multiple quantum well structure |
| 05/30/2001 | EP1104031A2 Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same |
| 05/30/2001 | EP1103076A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 05/29/2001 | US6240115 Epitaxial facet formation for laser diodes based on III-V material systems |
| 05/29/2001 | US6239901 Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate |
| 05/29/2001 | US6239716 Optical display device and method of operating an optical display device |
| 05/29/2001 | US6239490 P-contact for a Group III-nitride semiconductor device and method of making same |
| 05/29/2001 | US6239453 Optoelectronic material, device using the same, and method for manufacturing optoelectronic material |
| 05/29/2001 | US6239033 Making a device using nitride iii-v compound semiconductors on one major surface of a single-crystal substrate; thinning said single-crystal substrate by processing the other major surface |
| 05/29/2001 | US6239005 A platinum layer is epitaxially grown in a crystal orientation of by sputtering; after annealing at 600-900 degrees c., a buffer layer made of gallium nitride is epitaxially grown on the platinum layer |
| 05/29/2001 | US6238947 That permits etching of gan based compound semiconductor layers that allows the formation near a light-emitting layer of a current blocking layer for defining a current injection region |
| 05/29/2001 | US6238945 Intermediate layer includes a group iii-nitride semiconductor in which atoms of a group v element other than nitrogen have been substituted for a fraction of nitrogen atoms. |
| 05/29/2001 | CA2274577C Injection molding encapsulation for an electronic device directly onto a substrate |
| 05/25/2001 | WO2001037385A1 Contact structure for an electric ii/vi semiconductor component and a method for the production of the same |
| 05/25/2001 | WO2001037383A2 Group iii-nitride semiconductor structures with reduced phase separation |
| 05/25/2001 | WO2001037351A1 Multi color solid state led/laser |
| 05/25/2001 | WO2001037327A1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates |
| 05/25/2001 | WO2001037321A2 Semiconductor devices with selectively doped iii-v nitride layers |
| 05/23/2001 | EP1101842A2 Substrate for epitaxy of III-V compounds and a method for producing the same |
| 05/23/2001 | EP1101841A2 Substrate for epitaxy of III-V compounds and a method for producing the same |
| 05/23/2001 | EP1101250A1 Lead frame attachment for optoelectronic device |
| 05/23/2001 | EP0727099B1 Optoelectronic semiconductor device with a semiconductor diode laser |
| 05/23/2001 | DE19955747A1 Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices |
| 05/23/2001 | CN1296296A Novel process for preparing gallium nitride based LED |
| 05/22/2001 | US6236477 Optical transmission and receiving module |
| 05/22/2001 | US6236382 Light emitting diode display unit |
| 05/22/2001 | US6236067 Semiconductor light emitting device using an AlGaInP group or AlGaAs group material |
| 05/22/2001 | US6236066 Light emitting element with electrode window |
| 05/22/2001 | US6236065 Light-emitting diode array and method for fabricating the same |
| 05/22/2001 | US6236061 Semiconductor crystallization on composite polymer substrates |
| 05/22/2001 | US6236060 Bottom and top layers of electrically conductive material that are attached to voltage supplying, optically transparent electrodes, a block of oxide material between the layers, and nano-crystals disposed within block |
| 05/22/2001 | US6235617 Semiconductor device and its manufacturing method |
| 05/22/2001 | US6234648 Lighting system |
| 05/22/2001 | US6234646 Vehicular signal lamp having a plurality of light-emitting diodes |
| 05/22/2001 | US6234645 LED lighting system for producing white light |
| 05/17/2001 | WO2001035447A2 Highly efficient uv-emitter based on nitride semiconductors |
| 05/17/2001 | WO2001034382A1 Aerogel substrate and method for preparing the same |
| 05/17/2001 | US20010001241 Light emitting diode display unit |
| 05/17/2001 | US20010001207 Light emitting device and display |
| 05/17/2001 | DE19947044A1 Oberflächenmontierbares optoelektronisches Bauelement mit Reflektor und Verfahren zur Herstellung desselben Surface-mountable optoelectronic component with a reflector and method of manufacturing the same |
| 05/17/2001 | DE10049573A1 Illuminating diode comprises a first electrode, a stacking structure, a layer of distributing contacts, a transparent conducting layer, a Schottky barrier and a second electrode |
| 05/16/2001 | EP1100131A1 Chip light-emitting device |
| 05/16/2001 | EP1099261A1 Optical devices |
| 05/16/2001 | EP1099258A1 Light source for generating a visible light |
| 05/16/2001 | EP1099257A1 Infrared light emitting diodes |
| 05/16/2001 | EP1099255A1 Method for producing and separating semiconductor light-emitting diodes |
| 05/16/2001 | EP1099080A1 Luminaire with leds |
| 05/16/2001 | EP0811262B1 Diode laser component with cooling element |
| 05/16/2001 | CN1295365A Semiconductor device and semoconductor base board and their manufacture |
| 05/16/2001 | CN1295350A Light emitting semiconductor device and its manufacture |
| 05/15/2001 | US6233266 Light emitting device |
| 05/15/2001 | US6233265 AlGaInN LED and laser diode structures for pure blue or green emission |
| 05/15/2001 | US6233264 Optical semiconductor device having an active layer containing N |
| 05/15/2001 | US6232724 Light emitting diode array |
| 05/15/2001 | US6232623 Semiconductor device on a sapphire substrate |
| 05/15/2001 | US6232137 Nitride compound layer containing indium stacked on a substrate |
| 05/15/2001 | US6232136 Method of transferring semiconductors |
| 05/15/2001 | CA2092165C Chip carrier for optical device |
| 05/10/2001 | WO2001033913A1 A led array employing a specifiable lattice relationship |
| 05/10/2001 | WO2001033910A1 A lattice structure based led array for illumination |
| 05/10/2001 | WO2001033643A1 BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
| 05/10/2001 | WO2001033642A1 Gallium phosphide luminescent device |
| 05/10/2001 | WO2001033641A1 Semiconductor light-emitting device |
| 05/10/2001 | WO2001033640A1 Led white light source with broad band stimulation |
| 05/10/2001 | WO2001033607A2 Laser diode device and method for producing the same |
| 05/10/2001 | WO2001022132A3 Electro-optical module comprising external electronic components |
| 05/10/2001 | US20010001079 Electrode structure and method for fabricating the same |
| 05/10/2001 | US20010000916 Semiconductor photonic device, method for making the same, and method for forming ZnO film |
| 05/10/2001 | DE19953839A1 Hocheffiziente UV-Emitter auf Nitridhalbleiterbasis Highly efficient UV emitters on Nitridhalbleiterbasis |
| 05/10/2001 | DE19952712A1 Laserdiodenvorrichtung Laser diode device |
| 05/10/2001 | DE19943405A1 Verfahren zur Herstellung eines lateral monolithisch integrierten Lichtemissions-Halbleiterbauelements A process for preparing a laterally monolithically integrated light emitting semiconductor component |
| 05/10/2001 | CA2356323A1 Laser diode device and method for the manufacture thereof |
| 05/09/2001 | EP1098376A2 Organic EL device and image-reading, data-processing and display apparatus including the device |
| 05/09/2001 | EP1098375A1 Optical filter and Resonant Cavity LED comprising the said optical filter |
| 05/09/2001 | EP1098374A2 Optical filter and Resonant Cavity LED comprising the said optical filter |
| 05/09/2001 | EP1098373A2 A semiconductor light source |
| 05/09/2001 | EP1098134A2 LED lighting fixture |
| 05/09/2001 | EP1097108A1 Optical devices |
| 05/09/2001 | CN2429918Y Light emitting diodes with lamp cap electrode |
| 05/08/2001 | US6229834 Led display device |
| 05/08/2001 | US6229508 Active matrix light emitting diode pixel structure and concomitant method |
| 05/08/2001 | US6229160 Light extraction from a semiconductor light-emitting device via chip shaping |
| 05/08/2001 | US6229151 Gallium nitride based layers |
| 05/08/2001 | US6229150 Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication |
| 05/08/2001 | US6228669 Planar mount LED element and method for manufacturing the same |
| 05/08/2001 | US6227685 Electronic wide angle lighting device |
| 05/05/2001 | CA2323284A1 Led lighting fixture |
| 05/03/2001 | WO2001031676A1 Resonant microcavity display utilizing mirrors exhibiting anomalous phase dispersion |
| 05/03/2001 | WO2001030580A1 Circuit for driving self-scanned luminescent array |
| 05/03/2001 | US20010000733 Method of manufacturing nitride system III-V compound layer and method of manufacturing substrate |
| 05/03/2001 | US20010000622 Light-radiating semiconductor component with a luminescence conversion element |
| 05/03/2001 | DE19954319C1 Production of multilayered contact electrodes used in diodes comprises applying a first metallizing layer, heat treating and applying a second metallizing layer over the first layer |
| 05/03/2001 | DE19952932C1 LED-Weißlichtquelle mit breitbandiger Anregung LED white light source with broadband excitation, |
| 05/03/2001 | DE19951790A1 Leuchtstoff für Lichtquellen und zugehörige Lichtquelle Phosphor for light sources and associated light source |
| 05/03/2001 | DE19946101A1 Elektrooptisches Modul mit einem Gehäuse Electro-optical module with a housing |
| 05/03/2001 | DE10042911A1 Light emitting device used in piezoelectric resonators and servo components comprises substrate with first light-emitting piezoelectric layer having polar plane |
| 05/03/2001 | CA2356196A1 Driver circuit for a self-scanning light-emitting element array |
| 05/02/2001 | EP1096840A2 Arrangement of optoelectronic components |
| 05/02/2001 | EP1095998A2 Luminescent substance for light sources and corresponding light sources |