Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
02/2001
02/20/2001US6191534 Low current drive of light emitting devices
02/20/2001US6191439 Semiconductor light emitting device
02/20/2001US6191438 Light emitting diode array
02/20/2001US6191437 Semiconductor light emitting device and method of manufacturing the same
02/20/2001US6191436 Optical semiconductor device
02/20/2001US6191431 Device for emitting electromagnetic radiation at a predetermined wavelength
02/20/2001US6190937 Method of producing semiconductor member and method of producing solar cell
02/20/2001CA2315582A1 Method of fabricating a semiconductor mesa device
02/15/2001WO2001010926A1 Transparent liquid resin material for smt-enabled led-applications at higher temperatures and higher luminosities
02/15/2001WO2000063961B1 Dual process semiconductor heterostructures and methods
02/15/2001DE19936605A1 Transparente Gießharzmasse für SMT-fähige LED-Anwendungen mit hoher Temperatur und hohen Helligkeiten oder Leuchtstärken Transparent casting resin for SMT-compatible LED applications with high temperature and high brightness or lighting levels
02/14/2001EP1076390A2 Semiconductor light-emitting element and method of fabrication thereof
02/14/2001EP1075710A2 Light emitting semiconductor device
02/14/2001CN2419688Y Electrode structure for compound semicondutor assembly
02/14/2001CN1283875A LED with asymmetrical resonance tunnels
02/13/2001US6188527 LED array PCB with adhesive rod lens
02/13/2001US6188466 Image forming apparatus and two-dimensional light-emitting element array
02/13/2001US6188087 Semiconductor light-emitting device
02/13/2001US6188086 Light emitting diode array and optical image forming apparatus with light emitting diode array
02/13/2001US6187606 Avoids the cracking and other problems
02/13/2001US6187515 Etching a iii-v semiconductor wafer to form a curved mirror first surface then selectively and anisotropically etching into an opposite second surface a groove which perpendicularly intersects the plane of the first surface
02/13/2001CA2178324C Porous semiconductor material
02/08/2001WO2001009996A1 Semiconductor structures using a group iii-nitride quaternary material system
02/08/2001WO2001009963A1 Light-emitting diode
02/08/2001WO2001009962A1 Optoelectronic component and method for the production thereof
02/08/2001WO2000059084A3 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
02/08/2001DE10000142A1 Luminescent diode emits different or stable frequencies when electrons are stimulated below transition threshold to emit visible and/or ultraviolet light and transmits via lens filled with rare gas
02/07/2001EP1074049A1 Method and apparatus for distributing an optical clock in an integrated circuit
02/07/2001CN1283306A GaN signale crystalline substrate and method of producing the same
02/07/2001CN1282985A LED-type christmes lamp bulb and its making method
02/07/2001CN1282984A Blue-light LED using sapphire as substrate and its making technology
02/06/2001US6184582 Article comprising a standoff complaint metallization and a method for making same
02/06/2001US6184544 Semiconductor light emitting device with light reflective current diffusion layer
02/06/2001US6184543 Optical semiconductor device and method for fabricating the same
02/06/2001US6184542 Superluminescent diode and optical amplifier with extended bandwidth
02/06/2001US6184534 Method of pulsing light emitting diodes for reading fluorescent indicia, data reader, and system
02/06/2001US6184049 Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same
02/06/2001US6183086 Variable multiple color LED illumination system
02/01/2001WO2001008453A1 Luminescent array, wavelength-converting sealing material and light source
02/01/2001WO2001008452A1 Luminous substance for a light source and light source associated therewith
02/01/2001WO2001008229A1 ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF
02/01/2001WO2001008228A1 Bulk lens, light emitting body, lighting device and optical information system
02/01/2001WO2001008225A1 Method for making a device comprising layers of planes of quantum dots
02/01/2001WO2001007689A2 Tellurium-containing nanocrystalline materials
02/01/2001DE19932907A1 Anordnung zum Ankoppeln von optoelektronischen Elementen Arrangement for coupling optoelectronic elements
02/01/2001DE10033013A1 Flüssigkeits-Spritzpresssystem zum Vergießen von integrierten Halbleiterschaltungen Liquid molding system for encapsulating semiconductor integrated circuits
01/2001
01/31/2001EP1072074A1 Lattice-relaxed vertical optical cavities
01/31/2001EP1072072A1 Optical devices
01/31/2001CN1282111A Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof
01/31/2001CN1061471C Optical device packaging and method for packaging
01/30/2001US6181723 Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same
01/30/2001US6180962 Chip type semiconductor light emitting device having a solder preventive portion
01/30/2001US6180961 Light emitting semiconductor device with stacked structure
01/30/2001US6180960 Surface light-emitting element and self-scanning type light-emitting device
01/30/2001US6180869 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
01/30/2001US6180029 Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same
01/30/2001US6179483 Coupling apparatus of light emitter and optical fiber and method for adjusting optical fiber position using the same
01/30/2001US6179449 Multi-color semiconductor lamp and method of providing colored illumination
01/25/2001WO2001006608A1 Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
01/25/2001WO2001006576A1 Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance
01/25/2001DE19934126A1 Fluorescent oxide for forming white LEDs, includes cerium-activated garnet-based oxide with terbium addition
01/25/2001DE19931122A1 Arrangement for connecting light guides to electric circuit, has at least one connecting contact with adjustment section for aligning each converter to associated optical conductor
01/25/2001CA2377077A1 Long-lifetime polymer light-emitting devices with improved luminous efficiency and radiance
01/24/2001EP1071143A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF PRODUCING GaN-BASED CRYSTAL
01/24/2001EP1071141A2 Diamond semiconductor and method for the fabrication thereof.
01/24/2001EP1071070A2 Low current drive of light emitting device
01/24/2001EP1070909A1 Lighting device
01/24/2001EP1070371A1 Method for forming an optical silicon layer on a support and use of said method in the production of optical components
01/24/2001EP1070355A1 Quantum dot white and colored light emitting diodes
01/24/2001EP1070340A1 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
01/24/2001CN1281263A LED with improved brightness and its making method
01/24/2001CN1281248A Ohm contact layer of semiconductor and its making method
01/23/2001US6178190 Stacked structure including an n-type clad layer, an active layer, and a p-type clad layer on an indium phosphide substrate; the p-type clad layer is made from an magnesium zinc selenium tellurium based compound semiconductor
01/23/2001US6177761 LED with light extractor
01/23/2001US6177690 Semiconductor light emitting device having a p-n or p-i-n junction
01/23/2001US6177689 Photosensitive device having light transmissive sealing resin with carbonized outer surface
01/23/2001US6177688 Low defect densities
01/23/2001US6177684 Quantum semiconductor device having a quantum dot structure
01/23/2001US6177352 Method for producing semiconductor bodies with an MOVPE layer sequence
01/23/2001US6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
01/23/2001US6177291 Method of making aggregate of semiconductor micro-needles
01/23/2001US6176925 Detached and inverted epitaxial regrowth & methods
01/18/2001WO2001005193A1 Flyback converter as led driver
01/18/2001WO2001005001A1 Resonant microcavities
01/18/2001WO2001004966A1 Diamond ultraviolet luminescent element
01/18/2001WO2001004965A1 Diamond ultraviolet light-emitting device
01/18/2001WO2001004963A1 Encapsulation of a device
01/18/2001WO2001004940A1 Method for doping gallium nitride (gan) substrates and the resulting doped gan substrate
01/18/2001WO2001004938A1 Mechanical patterning of a device layer
01/18/2001WO2001004678A1 Device for coupling optoelectronic elements and fiber arrays
01/18/2001WO2000065700A3 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors
01/18/2001DE19935496C1 Optoelectronic component with light emitter or -receiver in mounting system, includes thermally-conductive auxiliary support with thin window in same material
01/18/2001CA2343227A1 Mechanical patterning of a device layer
01/18/2001CA2343062A1 Flyback converter as led driver
01/18/2001CA2342946A1 Encapsulation of a device
01/17/2001CN2415462Y Chip type LED
01/16/2001US6175123 Semiconductor devices with quantum-wave interference layers
01/16/2001US6174749 Fabrication of multiple-wavelength vertical-cavity opto-electronic device arrays
01/16/2001US6174747 Method of fabricating ridge waveguide semiconductor light-emitting device
01/11/2001WO2001003474A1 Control circuit for led and corresponding operating method