Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
09/2000
09/19/2000US6121950 Control system for display panels
09/19/2000US6121656 Semiconductor memory device mounted with a light emitting device
09/19/2000US6121639 Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides
09/19/2000US6121638 Multi-layer structured nitride-based semiconductor devices
09/19/2000US6121637 Semiconductor light emitting device with increased luminous power
09/19/2000US6121636 Semiconductor light emitting device
09/19/2000US6121635 Semiconductor light-emitting element having transparent electrode and current blocking layer, and semiconductor light-emitting including the same
09/19/2000US6121634 Nitride semiconductor light emitting device and its manufacturing method
09/19/2000US6121127 Methods and devices related to electrodes for p-type group III nitride compound semiconductors
09/19/2000US6121121 Method for manufacturing gallium nitride compound semiconductor
09/19/2000US6121075 Fabrication of two-dimensionally arrayed quantum device
09/19/2000US6120600 Double heterojunction light emitting diode with gallium nitride active layer
09/14/2000WO2000054342A1 HIGH BRIGHTNESS NITRIDE-BASED LEDs
09/14/2000WO2000019145A9 Illumination system having an array of linear prisms
09/14/2000WO1998036461A9 Optoelectronic semiconductor diodes and devices comprising same
09/14/2000DE19910743A1 Method to generate multicolored patterns, to test color vision or reactions; involves moving transparent color disc over light diodes to form image of mixed color
09/13/2000EP1034690A1 Circuit arrangement and signalling light provided with the circuit arrangement
09/13/2000EP1034571A1 Highly luminescent color-selective materials
09/13/2000EP1034325A1 Method for producing a gallium nitride epitaxial layer
09/13/2000EP0704068B1 Optical component
09/13/2000CN2396512Y Improvement in cup base of LED
09/12/2000US6117700 Method for fabricating semiconductor device having group III nitride
09/07/2000DE19908404A1 Inside illumination for air-, water- craft etc. with several light sources, such as a LEDs or laser diodes, of long service life
09/06/2000EP1033903A2 Illuminating electronic device and illumination method
09/06/2000EP0870294B1 True color flat panel display LED matrix module with driving circuitry
09/06/2000CN2395388Y 蓝色发光二极管 Blue light-emitting diode
09/06/2000CN2395387Y Eutectic package structure for light-emitting diode
09/06/2000CN2395136Y Light guide cavity for luminous diode
09/05/2000US6115521 Fiber/waveguide-mirror-lens alignment device
09/05/2000US6115515 Optical device mounting board
09/05/2000US6115399 Semiconductor light emitting device
09/05/2000US6113691 Subjecting substrate to organometallic and hydride precursor compounds in epitaxy reactor at ultra low pressure, whereby organometallic and hydride precursor compounds react at substrate surface without substantial reaction in gas phase
09/05/2000US6113685 Method for relieving stress in GaN devices
09/05/2000US6113284 Optical fiber light source assembly and manufacturing method for the same
09/05/2000US6113248 Automated system for manufacturing an LED light strip having an integrally formed connector
08/2000
08/31/2000WO2000017103A3 Inventory control
08/31/2000DE19962765A1 Phosphor-LED zum Kompensieren eines unzureichenden Anteils von rotem Licht Phosphorus-LED for compensating an insufficient proportion of red light
08/31/2000DE19951656A1 Light emitting device (LED) with chip cast in housing for light input into optical fibre by focussing the LED light emission
08/30/2000EP1032099A2 Semiconductor device and method of fabricating the same
08/30/2000CN2394329Y Crystal coated sealing structure for LED
08/30/2000CN2394328Y LED Christmas bulbs
08/30/2000CN1265228A Nitride semiconductor device
08/29/2000US6111277 Semiconductor device as well as light emitting semiconductor device
08/29/2000US6111276 Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes and a process for their fabrication
08/29/2000US6111275 Gallium nitride group compound semiconductor light-emitting device and method for fabricating the same
08/29/2000US6111273 Semiconductor device and its manufacturing method
08/29/2000US6111272 Semiconductor light source formed of layer stack with total thickness of 50 microns
08/29/2000US6111271 Optoelectronic device with separately controllable carrier injection means
08/29/2000US6110757 Method of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structure
08/29/2000US6110277 Creating parcel-like structure on surface of substrate, growing nucleation layer on silicon surface in parcels, epitaxially growing nitride compound semiconductor exclusively in parcels on nucleation layer
08/24/2000WO1998054929A3 Uv/blue led-phosphor device with efficient conversion of uv/blue light to visible light
08/23/2000EP1030417A2 Light output control circuit
08/23/2000EP1030378A2 Semiconductor luminescent element and method of manufacturing the same
08/23/2000EP1030377A2 Light-emitting diode
08/23/2000EP1030208A2 Display illuminator and portable information apparatus having the same
08/23/2000EP1029368A1 Semiconductor substrate and method for making the same
08/23/2000EP1029366A1 Polymer-nanocrystal photo device and method for making the same
08/23/2000EP0936682B1 Light emitting device and display device
08/23/2000CN1264199A Using laser melting for adjusting thickness of chip joining Alx, Gay, Inz N structure
08/23/2000CN1264181A Light-emitting diode
08/23/2000CN1264055A Illuminating apparatus and hand information device with the illuminating apparatus
08/22/2000US6107676 Leadframe and a method of manufacturing a semiconductor device by use of it
08/22/2000US6107648 Semiconductor light emitting device having a structure which relieves lattice mismatch
08/22/2000US6107647 Semiconductor AlGaInP light emitting device
08/22/2000US6107645 Thermoelectric system using semiconductor
08/22/2000US6107644 Semiconductor light emitting device
08/22/2000US6107213 Method for making thin film semiconductor
08/22/2000US6107162 Forming a semiconductor layer on one surface of a sapphire substrate, forming grooves in a surface opposite of substrate surface in such a shape as to concentrate stress at bottom portion of the groove, breaking the substrate at groove
08/22/2000US6106613 Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
08/17/2000WO2000048278A1 Method for forming an optical silicon layer on a support and use of said method in the production of optical components
08/17/2000WO2000048275A1 Silicon light-emitting device and method for the production thereof
08/17/2000WO2000048254A1 Nitride semiconductor device and its manufacturino method
08/17/2000WO2000048239A1 Heteroepitaxial growth with thermal expansion- and lattice-mismatch
08/17/2000WO2000047930A1 Lighting device
08/17/2000DE19953609A1 Dickenanpassen von waferverbundenen Al¶x¶Ga¶y¶In¶z¶N-Strukturen durch Laserschmelzen Dick Customize wafer Al¶x¶Ga¶y¶In¶z¶N associated structures by laser melting
08/17/2000DE19953588A1 Waferverbundene Al¶x¶Ga¶y¶In¶z¶N-Strukturen Related Al¶x¶Ga¶y¶In¶z¶N wafer structures
08/17/2000DE19905694A1 Bauelement Component part
08/17/2000DE10000088A1 Indium aluminum gallium nitride light-emitting device such as surface or edge emitting laser comprises host substrate, light-emitting structure, device contacts and wafer bonding layer between substrate and light-emitting structure
08/16/2000EP1028475A1 Electronic device comprising a columnar discotic phase
08/16/2000EP1027996A1 Colour filter moving mechanism for optical print head and printer
08/16/2000EP1027736A1 Group iii nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
08/16/2000EP0873557B1 Image-display device emitting multicoloured light
08/15/2000US6104044 Semiconductor compound electrode material containing calcium and a noble metal
08/15/2000US6104039 P-type nitrogen compound semiconductor and method of manufacturing same
08/15/2000US6103604 High electron mobility transparent conductor
08/15/2000US6103600 Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method
08/15/2000US6103543 Forming a base layer of electrode made of vanadium, niobium amd/or zirconium on a portion of n-type gallium nitride (gan) layer; forming main electrode layer of another metal; heat treating to form an n electrode; improved connection
08/15/2000US6103542 Method of manufacturing an optoelectronic semiconductor device comprising a mesa
08/15/2000US6103540 Laterally disposed nanostructures of silicon on an insulating substrate
08/10/2000WO2000046888A1 Radiation generation method and device for realising the same
08/10/2000WO2000046862A1 Photoelectric conversion functional element and production method thereof
08/10/2000WO2000046839A2 LUMINESCENCE SPECTRAL PROPERTIES OF CdS NANOPARTICLES
08/10/2000WO2000046431A1 Method for producing nitride monocrystals
08/10/2000WO2000046321A1 Fluorene copolymers and devices made therefrom
08/10/2000DE19904378A1 Verfahren zur Herstellung von Nitrid-Einkristallen A process for producing nitride crystals
08/10/2000CA2360644A1 Fluorene copolymers and devices made therefrom
08/09/2000EP1026442A1 Lighting device
08/09/2000EP1025988A1 Multi-layered coated substrate and method of production thereof
08/09/2000EP1025593A1 Semiconductor with tunnel hole contact sources
08/09/2000CN1262787A II-VI semiconductor component with at least one junction between Se-containing layer and BeTe containing layer and method for producing said junction
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