Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
05/2001
05/02/2001EP1095411A1 Radiation-emitting and/or -receiving component
05/02/2001CN2428868Y White-light diode
05/02/2001CN1293457A LED unit
05/02/2001CN1293425A Multi colour display device
05/01/2001US6225912 Light-emitting diode array
05/01/2001US6225650 Comprises a base substrate, a mask layer, and a gallium nitride group crystal layer grown to cover the mask layer; allows growth of a gallium nitride group crystal in the c axis orientation
05/01/2001US6225648 High-brightness light emitting diode
05/01/2001US6225647 Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same
05/01/2001US6225195 Method for manufacturing group III-V compound semiconductor
05/01/2001US6225139 Manufacturing method of an led of a type of round concave cup with a flat bottom
05/01/2001US6224667 Method for fabricating semiconductor light integrated circuit
05/01/2001US6224216 System and method employing LED light sources for a projection display
04/2001
04/26/2001WO2001030119A1 Control circuit for led and corresponding operating method
04/26/2001WO2001029909A1 Light-emitting devices
04/26/2001WO2001029905A1 Luminescent diode device
04/26/2001WO2001029904A1 Luminescent diode device
04/26/2001WO2001029881A2 Method of making an optoelectronic device using multiple etch stop layers
04/26/2001US20010000410 Forming led having angled sides for increased side light extraction
04/26/2001DE19951158A1 Anordnung optoelektrischer Elemente Array of optoelectronic elements
04/26/2001CA2354473A1 Drive circuit for leds and an associated operating method
04/25/2001EP1094529A2 Semiconductor light emitting device
04/25/2001CN2427889Y Non-crystalline AIInGaN light-emitting diode structure
04/25/2001CN1292934A Nitride semiconductor device
04/24/2001US6222208 Light-emitting diode and light-emitting diode array
04/24/2001US6222207 Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
04/24/2001US6222205 Layered semiconductor structure for lateral current spreading, and light emitting diode including such a current spreading structure
04/24/2001US6222204 Electrode structure and method for fabricating the same
04/24/2001US6221684 GaN based optoelectronic device and method for manufacturing the same
04/24/2001US6221683 Method for producing a light-emitting component
04/24/2001US6221510 Blend of epoxy resin, hardener, coupler and release agent
04/24/2001US6220915 Method for manufacturing lamp tiles
04/24/2001US6220708 Method and device for producing multicolored patterns
04/19/2001US20010000335 Comprising uniform medium with controllable electric characteristic and semiconductor ultrafine particles dispersed in medium and having a mean particle size of 100 nm or less
04/19/2001US20010000316 Optical system unit for optical transceiver
04/19/2001DE19950135A1 Control circuit for LED array has master string with given number of LEDs in string and control circuit also controls semiconducting switch of slave string
04/19/2001DE19947030A1 Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung Surface structured light emitting diode with improved current injection
04/18/2001EP1092250A1 Light source control device
04/18/2001EP1092240A1 Fast luminescent silicon
04/18/2001CN2427017Y Two-colour complementary white light emitting diode
04/18/2001CN1292154A Radiation-emitting and/or-receiving component
04/18/2001CN1292149A Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
04/18/2001CN1292075A Omnidirectional lighting device
04/18/2001CN1291795A Base plate structure of LED
04/18/2001CN1291794A Vertically standing LED and its electrically conducting circuit structure
04/18/2001CN1291793A Method of making semi conductor device
04/17/2001US6219074 Light-emitting device and recording device using the same
04/17/2001US6218790 Connection assembly with selective establishment of intensity of light-emitting diode
04/17/2001US6218681 Compound semiconductor epitaxial layers provided on a substrate, with a low carrier concentration doped with nitrogen
04/17/2001US6218280 High pressure vapor deposition
04/12/2001WO2001025681A1 Elongated light emitting diode lighting system
04/12/2001WO2000060381A3 Flat panel solid state light source
04/12/2001US20010000209 Led having angled sides for increased side light extraction
04/12/2001DE19945131A1 Elektronisches Bauelement und Beschichtungs-Mittel Electronic component and coating agent
04/12/2001DE19943406A1 Lichtemissionsdiode mit Oberflächenstrukturierung Light-emitting diode with surface texturing
04/12/2001DE10015259A1 Steckerbuchse, Verfahren zu deren Herstellung, sowie ein die Steckerbuchse aufweisender Steckverbinder Socket, to processes for their preparation, and the female connector having a connector Direction
04/12/2001CA2386224A1 Elongated light emitting diode lighting system
04/11/2001EP1091422A2 Semiconductor device, semiconductor substrate, and manufacture method
04/11/2001CN2426640Y Directional light high-efficiency LED
04/11/2001CN1291282A Luminous diode lighting device
04/11/2001CN1291068A Light emitting device capable of giving energy
04/11/2001CN1290967A Luminous diode and its producing method
04/11/2001CN1290958A Nitride III semiconductor device and its producing method
04/10/2001US6215803 Gallium nitride group compound semiconductor light-emitting device
04/10/2001US6215244 Stacked organic light emitting device with specific electrode arrangement
04/10/2001US6215134 Semiconductor surface lenses and shaped structures
04/10/2001US6215133 Light-emitting gallium nitride-based compound semiconductor device
04/10/2001US6215132 Light-emitting diode with divided light-emitting region
04/10/2001US6215131 Light-emitting device using vacuum doughnut to serve as a current blocking layer
04/10/2001US6214427 Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion
04/10/2001US6214116 For processing gallium nitride based semiconductors; high quality epitaxial growth because no dust is produced
04/10/2001US6213650 Method of making optical module
04/05/2001WO2001024584A1 Systems and methods for calibrating light output by light-emitting diodes
04/05/2001WO2001024324A2 High-power laser with transverse mode filter
04/05/2001WO2001024285A1 A light emitting diode device comprising a luminescent substrate that performs phosphor conversion
04/05/2001WO2001024284A1 A light emitting diode device that produces white light by performing complete phosphor conversion
04/05/2001WO2001024283A1 Light emitting diode comprising a thin phosphor-conversion film
04/05/2001WO2001024282A1 Method for forming p-type semiconductor crystalline layer of iii-group element nitride
04/05/2001WO2001024281A1 Optoelectronic component that comprises a reflector and method for producing said component
04/05/2001WO2001024280A1 Surface structured light-emitting diode with improved current coupling
04/05/2001WO2001024229A2 Phosphor and white light led lamp using the phosphor
04/05/2001WO2001023804A1 Apparatus for mixing light from different color leds
04/05/2001DE19940319A1 Verfahren zum spannungsarmen Aufsetzen einer Linse auf ein oberflächenmontierbares optoelektronisches Bauelement A method for low-stress setting up a lens on a surface-mountable optoelectronic component
04/05/2001DE10020501A1 Epitaxial wafer for an infrared LED has a p-conducting layer, a p-conducting covering layer, a p-conducting active layer and an n-conducting covering layer all made of gallium aluminum arsenide
04/04/2001EP1089348A2 Light-emitting semiconductor device
04/04/2001EP1088914A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
04/04/2001EP1088380A1 Superluminescent diode and optical amplifier with wavelength stabilization using wdm couplers and back output light
04/04/2001EP1088350A1 Lighting system
04/04/2001CN1290056A Semiconductor elements and manufacture thereof
04/04/2001CN1290044A Technology for making semiconductor
04/04/2001CN1289865A Growth process for monocrystal of gadolinium nitride, substrates of gadolinium mitride monocrystal and manufacture thereof
04/03/2001US6212213 Projector light source utilizing a solid state green light source
04/03/2001US6211537 LED array
04/03/2001US6211095 Method for relieving lattice mismatch stress in semiconductor devices
04/03/2001US6210987 Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
04/03/2001US6210604 For x-ray image intensifiers
04/03/2001US6210479 Depositing layer of nitride material such as gallium nitride, aluminum nitride and/or indium nitride, on sapphire substrate; growing semiconductor structure on nitride layer; lifting sapphire substrate by irradiation; remvoing metallic residues
03/2001
03/29/2001WO2001022545A1 Luminous element and luminous element module
03/29/2001WO2001022501A1 Electronic component and coating agent
03/29/2001WO2001022132A2 Electro-optical module comprising external electronic components
03/29/2001WO2001021412A1 Cross under metal interconnection structure of self scanning light-emitting device