Patents
Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364)
09/1999
09/15/1999EP0942474A2 Light emitting diode
09/15/1999EP0942459A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
09/15/1999EP0942407A1 Current-driven emissive display device, method for driving the same, and method for manufacturing the same
09/15/1999CN2338880Y Positioning block structure for light-emitting diode
09/15/1999CN1228873A Light-emitting semi-conductor component with luminescence conversion element
09/15/1999CN1045138C Short-phase dry length semiconductor integrated light source
09/14/1999US5953581 Dry etching process for forming electrodes and mirror facets; etching upper semiconductor layer to form a window, forming an electrode for a lower semiconductor layer through the window
09/14/1999US5952789 Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor
09/14/1999US5952681 Light emitting diode emitting red, green and blue light
09/14/1999US5952680 Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications
09/14/1999US5952115 Electroluminescent devices
09/14/1999US5951152 For mounting a light emitting diode
09/10/1999WO1999045312A1 Omnidirectional lighting device
09/09/1999DE19830751A1 LED with transparent encapsulation
09/08/1999EP0940861A2 Light emitting diode
09/08/1999EP0940860A1 Spheric semiconductor device, method for manufacturing the same, and spheric semiconductor device material
09/08/1999EP0939876A1 Method for production of conducting element and conducting element
09/08/1999CN2337679Y Organic thin membrance electroluminescent element
09/08/1999CN1228198A Process for producing semiconductor bodies with MOVPE-layer sequence
09/07/1999US5949804 Semiconductor light emission device
09/07/1999US5949182 For optical displays
09/07/1999US5949093 Semiconductor light emitting device with current blocking region
09/07/1999US5949081 For the testing of infrared detection systems
09/02/1999WO1999044243A2 SEMICONDUCTOR DEVICE COMPRISING P-TYPE ZnMgSSe LAYER
09/02/1999WO1999044224A1 Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
09/02/1999WO1999031738A3 Aiii-nitride channeled led
09/01/1999EP0939468A2 Drive circuit for light emitting element
09/01/1999EP0939447A1 Indium based alloy and infrared transducer using the same
09/01/1999EP0938834A1 Lamp
09/01/1999CN1227670A Process for manufacturing an infrared-emitting luminescent diode
09/01/1999CN1227420A Method for producing unshaped light-emitting diode and its forming mold
08/1999
08/31/1999US5946121 IrDA data link with VCSEL light source
08/31/1999US5945689 Light-emitting semiconductor device using group III nitride compound
08/31/1999US5945688 Optical semiconductor device and lead frame used in such a device
08/26/1999WO1999020081A3 Highly transparent non-metallic cathodes
08/25/1999EP0938004A2 Method of making optical module
08/25/1999EP0937790A2 Method of making GaN single crystal and apparatus for making GaN single crystal
08/25/1999CN2335265Y Base for light emitting diode (LED)
08/24/1999US5943553 Applying semiconductor laser mirror layers after securing support plate to laser body
08/24/1999US5943355 Having p-type guide layer of zinc-sulfur-selenium mixed crystal doped with nitrogen; durability
08/24/1999US5942770 Light-emitting diode chip component and a light-emitting device
08/24/1999US5942748 Liquid level sensor and detector
08/19/1999WO1999041789A1 Semiconductor light-emitting diode
08/19/1999DE19905526A1 LED production e.g. for optical communications and information display panels
08/19/1999DE19755009C1 LED structure is produced with reduced dislocation density and lattice stress
08/18/1999EP0936683A1 Reflection type light emitting diode
08/18/1999EP0936682A1 Light emitting device and display device
08/18/1999EP0936400A2 Multiple light emitting diode module
08/18/1999CN1226089A High-efficiency intensified step-by-step high-lightness luminous diode and design method thereof
08/17/1999US5940684 Processing semiconductor wafer sequentially within a series of reactors whereby wafer is transferred to subsequent reactor through hermetically isolated passageways between each reactor
08/17/1999US5940683 Forming array of light emitting diode (led) chips each having connectors around the perimeter on surface of gallium arsenide first substrate, flip-chip mounting to a driver chip, engaging connectors, etching away first substrate
08/17/1999US5940563 Receptacle optical module
08/17/1999US5939996 Display sign and an optical element for use in the same
08/17/1999US5939735 Semiconductor light emitting device
08/17/1999US5939734 Semiconductor light emitting device and method of fabricating the same
08/17/1999US5939733 Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As
08/17/1999US5939732 Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof
08/17/1999US5939214 Thermal performance package for integrated circuit chip
08/12/1999WO1999040624A1 Integrated circuit device
08/12/1999WO1999040364A1 Lighting fixture
08/12/1999CA2319506A1 Integrated circuit device
08/11/1999EP0934604A1 Optoelectronic semiconductor devices
08/11/1999EP0859967B1 Low profile optical device with multiple mounting configurations
08/11/1999CN2333093Y Sizing shaped mould strip of light-emitting diode
08/11/1999CN1225520A Semiconductor device and method of forming the same
08/10/1999US5937313 Method of forming quantum wire for compound semiconductor
08/10/1999US5937274 Fabrication method for AlGaIn NPAsSb based devices
08/10/1999US5937273 Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material
08/10/1999US5937118 Quantum synthesizer, THz electromagnetic wave generation device, optical modulation device, and electron wave modulation device
08/10/1999US5936353 High-density solid-state lighting array for machine vision applications
08/10/1999US5936266 Semiconductor devices and methods with tunnel contact hole sources
08/10/1999US5936264 Mounting technique for a chip light emitting device
08/10/1999US5935410 Applying an etching photocurrent for an electrochemical etching process
08/05/1999WO1999039413A2 Ii-iv lasers having index-guided structures
08/05/1999WO1999039378A1 Method for forming cavities in a semiconductor substrate by implanting atoms
08/05/1999DE19901917A1 LED with increased light emission efficiency
08/05/1999DE19901916A1 Semiconductor light emitting module
08/04/1999EP0933823A2 Expansion compensated optoelectronic semiconductor device, in particular UV emitting diode and process for manufacturing the same
08/03/1999US5933705 Passivation and protection of semiconductor surface
08/03/1999US5933443 Semiconductor laser
08/03/1999US5932899 Semiconductor having enhanced acceptor activation
08/03/1999US5932896 Nitride system semiconductor device with oxygen
08/03/1999US5932004 Semiconductor laser device having clad and contact layers respectively doped with MG and method for fabricating the same
08/03/1999US5931570 Light emitting diode lamp
08/03/1999CA2139709C Method of processing an epitaxial wafer of inp
07/1999
07/31/1999CA2259802A1 Vertical cavity surface emitting laser
07/30/1999CA2260574A1 Ohmic contact and process for producing the same
07/30/1999CA2260389A1 Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (uv) light emitting diode, and method of its manufacture
07/29/1999WO1999038218A1 Semiconductor light emitting element and method for manufacturing the same
07/29/1999WO1999030372A3 Opto-electronical component for the infrared wavelength range
07/29/1999DE19901918A1 Light emitting semiconductor device e.g. an LED component
07/28/1999EP0931357A1 Opto-electronic module for bi-directional optical data transmision
07/28/1999EP0931332A1 Method for separating two material layers and electronic components produced therewith
07/28/1999CN1224533A Process for producing light-emitting and/or light-receiving semiconductor body
07/28/1999CN1224260A Light emitting semiconductor element capable of suppressing change of driving current
07/27/1999US5930656 Forming dielectric passivation film over mixed metal nitride layer on substrate within same chemical reactor without contamination or oxidation; simplification
07/27/1999US5929466 Algainn-based material, improvement of a buffer layer
07/27/1999US5929465 Non-quadrilateral light emitting devices of compound semiconductor
07/27/1999US5929461 Optical semiconductor device having a semiconductor laminate mirror
07/27/1999US5928421 Method of forming gallium nitride crystal