Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/13/2014US20140332894 Non-volatile memory devices having air gaps and methods of manufacturing the same
11/13/2014US20140332893 Integrated Circuit Device Having Defined Gate Spacing And Method Of Designing And Fabricating Thereof
11/13/2014US20140332892 Stringer-free gate electrode for a suspended semiconductor fin
11/13/2014US20140332890 Stringer-free gate electrode for a suspended semiconductor fin
11/13/2014US20140332888 Semiconductor device including finfet structures with varied epitaxial regions, related method and design structure
11/13/2014US20140332887 Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same
11/13/2014US20140332886 Single poly plate low on resistance extended drain metal oxide semiconductor device
11/13/2014US20140332885 Trench Transistor Having a Doped Semiconductor Region
11/13/2014US20140332884 High voltage device
11/13/2014US20140332882 Trench junction barrier controlled schottky
11/13/2014US20140332881 Semiconductor device
11/13/2014US20140332880 Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
11/13/2014US20140332879 Power Semiconductor Device with Reduced On-Resistance and Increased Breakdown Voltage
11/13/2014US20140332878 Semiconductor device and a manufacturing method of the same
11/13/2014US20140332876 High voltage gate formation
11/13/2014US20140332874 Semiconductor devices
11/13/2014US20140332869 Solid-state image pickup device
11/13/2014US20140332864 Method for Providing a Gate Metal Layer of a Transistor Device and Associated Transistor
11/13/2014US20140332863 Semiconductor device and method of manufacturing the same
11/13/2014US20140332862 Stacked carbon-based fets
11/13/2014US20140332861 Fin structure with varying isolation thickness
11/13/2014US20140332860 Stacked carbon-based fets
11/13/2014US20140332859 Self-Aligned Wrapped-Around Structure
11/13/2014US20140332858 Junction gate field-effect transistor (jfet), semiconductor device having jfet and method of manufacturing
11/13/2014US20140332857 Junction gate field-effect transistor (jfet), semiconductor device and method of manufacturing
11/13/2014US20140332855 Reduced short channel effect of iii-v field effect transistor via oxidizing aluminum-rich underlayer
11/13/2014US20140332854 Stress release structures for metal electrodes of semiconductor devices
11/13/2014US20140332853 Method and apparatus for reduced parasitics and improved multi-finger transistor thermal impedance
11/13/2014US20140332852 Non-planar semiconductor device having group iii-v material active region with multi-dielectric gate stack
11/13/2014US20140332851 Reduced short channel effect of iii-v field effect transistor via oxidizing aluminum-rich underlayer
11/13/2014US20140332850 Epitaxial Growth of Crystalline Material
11/13/2014US20140332849 Semiconductor device and method of manufacturing the same
11/13/2014US20140332847 Composite One-Piece IGBT Device and Producing Method Thereof
11/13/2014US20140332846 Transistor-type protection device, semiconductor integrated circuit, and manufacturing method of the same
11/13/2014US20140332845 Topside structures for an insulated gate bipolar transistor (igbt) device to achieve improved device perforemances
11/13/2014US20140332844 A process method and structure for high voltage mosfets
11/13/2014US20140332843 Junction-isolated blocking voltage structures with integrated protection structures
11/13/2014US20140332841 High voltage breakover diode having comparable forward breakover and reverse breakdown voltages
11/13/2014US20140332833 Substrate having hetero-structure, method for manufacturing the same and nitride semiconductor light emitting device using the same
11/13/2014US20140332824 Semiconductor structure with different fins of finfets
11/13/2014US20140332823 Schottky barrier diode
11/13/2014US20140332822 Nitride high electron mobility transistor and manufacturing method thereof
11/13/2014US20140332821 Semiconductor device, light emitting device using the same, and light emitting device package including the same
11/13/2014US20140332817 Thin Film Transistor, Thin Film Transistor Array Substrate, and Method for Making the Same
11/13/2014US20140332816 Semiconductor device
11/13/2014US20140332815 Semiconductor device including finfet and diode having reduced defects in depletion region
11/13/2014US20140332814 Methods for the synthesis of arrays of thin crystal grains of layered semiconductors sns2 and sns at designed locations
11/13/2014US20140332809 Semiconductor device
11/13/2014US20140332808 Semiconductor device and method for manufacturing the same
11/13/2014US20140332807 Semiconductor device and manufacturing method thereof
11/13/2014US20140332806 Semiconductor device
11/13/2014US20140332804 Analog circuit and semiconductor device
11/13/2014US20140332801 Semiconductor device and method for manufacturing the same
11/13/2014US20140332800 Semiconductor Device and Manufacturing Method Thereof
11/13/2014US20140332799 Semiconductor device
11/13/2014US20140332767 Thin film transistor and organic light emitting diode display including the same
11/13/2014US20140332759 Electrode, an electronic device, and a method for manufacturing an optoelectronic device
11/13/2014US20140332753 Nano field-effect vacuum tube and fabrication method thereof
11/13/2014US20140332750 Transistors, Memory Cells and Semiconductor Constructions
11/13/2014US20140332749 Semiconductor device and method of manufacturing same
11/13/2014US20140332746 Single crystal high dielectric constant material and method for making same
11/13/2014US20140332251 Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same
11/13/2014US20140331917 Silicon carbide powder, method for manufacturing the same and method for growing single crystal
11/11/2014US8885404 Non-volatile storage system with three layer floating gate
11/11/2014US8885114 Display device and manufacturing method thereof
11/11/2014US8884682 Power semiconductor device
11/11/2014US8884651 Logic circuit and semiconductor device
11/11/2014US8884448 Flip chip interconnection with double post
11/11/2014US8884447 Semiconductor device and method of manufacturing the same
11/11/2014US8884445 Semiconductor chip and stacked semiconductor package having the same
11/11/2014US8884444 Nonvolatile memory device and manufacturing method thereof
11/11/2014US8884441 Process of ultra thick trench etch with multi-slope profile
11/11/2014US8884440 Integrated circuit device including through-silicon via structure having offset interface
11/11/2014US8884437 Electrical device with protruding contact elements and overhang regions over a cavity
11/11/2014US8884435 Semiconductor device
11/11/2014US8884433 Circuitry component and method for forming the same
11/11/2014US8884431 Packaging methods and structures for semiconductor devices
11/11/2014US8884422 Flip-chip fan-out wafer level package for package-on-package applications, and method of manufacture
11/11/2014US8884406 Etch depth determination structure
11/11/2014US8884404 Mechanism of patterning a semiconductor device and product resulting therefrom
11/11/2014US8884400 Capacitor in Post-Passivation structures and methods of forming the same
11/11/2014US8884397 Memory device and storage apparatus
11/11/2014US8884395 Schottky diode and method for fabricating the same
11/11/2014US8884393 Nitride compound semiconductor device and manufacturing method thereof
11/11/2014US8884388 Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
11/11/2014US8884387 Pillar-based interconnects for magnetoresistive random access memory
11/11/2014US8884386 MRAM device and fabrication method thereof
11/11/2014US8884385 Physical quantity sensor with son structure, and manufacturing method thereof
11/11/2014US8884384 Micromachine and method for manufacturing the same
11/11/2014US8884383 Semiconductor device and method of testing the same
11/11/2014US8884380 Semiconductor device and method of manufacturing the same
11/11/2014US8884379 Strain engineering in semiconductor devices by using a piezoelectric material
11/11/2014US8884378 Semiconductor device and a method for manufacturing a semiconductor device
11/11/2014US8884377 Conductive line structures and methods of forming the same
11/11/2014US8884376 Large bit-per-cell three-dimensional mask-programmable read-only memory
11/11/2014US8884375 Semiconductor integrated circuit device
11/11/2014US8884371 SOI substrate and manufacturing method thereof
11/11/2014US8884369 Vertical power MOSFET and methods of forming the same
11/11/2014US8884367 MOSgated power semiconductor device with source field electrode
11/11/2014US8884366 Semiconductor device with buried bit lines
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