Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2014
11/11/2014US8883555 Electronic device, manufacturing method of electronic device, and sputtering target
11/11/2014US8883554 Method for manufacturing a semiconductor device using an oxide semiconductor
11/11/2014US8883541 Self-powered integrated circuit with multi-junction photovoltaic cell
11/11/2014US8883538 High power density photo-electronic and photo-voltaic materials and methods of making
11/11/2014US8883524 Methods and apparatus for CMOS sensors
11/11/2014US8883357 Ceramic material and process for producing the same
11/11/2014US8883047 Thermoelectric skutterudite compositions and methods for producing the same
11/06/2014US20140329374 Methods of fabricating quantum well field effect transistors having multiple delta doped layers
11/06/2014US20140329368 Bipolar transistor with embedded epitaxial external base region and method of forming the same
11/06/2014US20140329367 Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
11/06/2014US20140329366 Method for fabricating semiconductor device
11/06/2014US20140329365 Semiconductor device and method for manufacturing the same
11/06/2014US20140329364 Manufacturing method of power semiconductor
11/06/2014US20140328742 Method for producing group iii nitride crystal, group iii nitride crystal, and semiconductor device
11/06/2014US20140328128 NAND String Utilizing Floating Body Memory Cell
11/06/2014US20140328106 Semiconductor memory device
11/06/2014US20140327665 Pixel circuit, display device, and method of driving pixel circuit
11/06/2014US20140327142 Metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
11/06/2014US20140327134 Metal bump structure for use in driver ic and method for forming the same
11/06/2014US20140327133 Metal bump structure for use in driver ic and method for forming the same
11/06/2014US20140327118 Power semiconductor device and fabricating method thereof
11/06/2014US20140327116 Composite substrate
11/06/2014US20140327114 Semiconductor component with optimized edge termination
11/06/2014US20140327113 3d integrated heterostructures having low-temperature bonded interfaces with high bonding energy
11/06/2014US20140327112 Method to delineate crystal related defects
11/06/2014US20140327111 Trench isolation structures and methods for bipolar junction transistors
11/06/2014US20140327110 Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuit
11/06/2014US20140327106 Bipolar junction transistors with self-aligned terminals
11/06/2014US20140327105 Electrostatic discharge diode
11/06/2014US20140327104 Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric Layer
11/06/2014US20140327103 Semiconductor Device with an Electrode Buried in a Cavity
11/06/2014US20140327093 Field-effect transistor and fabricating method thereof
11/06/2014US20140327092 Semiconductor device and manufacturing method of the same
11/06/2014US20140327091 Fin field effect transistor
11/06/2014US20140327090 Finfet device with an etch stop layer positioned between a gate structure and a local isolation material
11/06/2014US20140327089 Finfet devices having recessed liner materials to define different fin heights
11/06/2014US20140327088 Finfet semiconductor device with a recessed liner that defines a fin height of the finfet device
11/06/2014US20140327086 Semiconductor Device and Method for Forming Same
11/06/2014US20140327084 Dual shallow trench isolation (sti) field effect transistor (fet) and methods of forming
11/06/2014US20140327081 Standard cell metal structure directly over polysilicon structure
11/06/2014US20140327080 Semiconductor structure and manufacturing method thereof
11/06/2014US20140327078 Semiconductor Device
11/06/2014US20140327076 Robust replacement gate integration
11/06/2014US20140327075 High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
11/06/2014US20140327073 Semiconductor apparatus and manufacturing method thereof
11/06/2014US20140327072 Semiconductor device and method for manufacturing the same
11/06/2014US20140327071 Method of Manufacturing a Semiconductor Device
11/06/2014US20140327070 Super Junction Structure Semiconductor Device Based on a Compensation Structure Including Compensation Layers and a Fill Structure
11/06/2014US20140327069 Semiconductor Device with a Super Junction Structure Based On a Compensation Structure with Compensation Layers and Having a Compensation Rate Gradient
11/06/2014US20140327068 Semiconductor Device with a Super Junction Structure with One, Two or More Pairs of Compensation Layers
11/06/2014US20140327066 Semiconductor storage device and manufacturing method thereof
11/06/2014US20140327065 Conductive layers for hafnium silicon oxynitride films
11/06/2014US20140327058 Self-aligned contacts for replacement metal gate transistors
11/06/2014US20140327057 Power Semiconductor Device with a Double Metal Contact
11/06/2014US20140327056 Semiconductor device having contact plug and method of manufacturing the same
11/06/2014US20140327055 Replacement gate process and device manufactured using the same
11/06/2014US20140327054 Raised Source/Drain and Gate Portion with Dielectric Spacer or Air Gap Spacer
11/06/2014US20140327053 Semiconductor Device Including Trench Transistor Cell Array and Manufacturing Method
11/06/2014US20140327049 Methods of manufacturing the gallium nitride based semiconductor devices
11/06/2014US20140327048 Compact Electrostatic Discharge (ESD) Protection Structure
11/06/2014US20140327047 Fet dielectric reliability enhancement
11/06/2014US20140327046 Fin-Last FinFET and Methods of Forming Same
11/06/2014US20140327045 Method to make dual material finfet on same substrate
11/06/2014US20140327044 Method to make dual material finfet on same substrate
11/06/2014US20140327043 High electron mobility transistor and method of manufacturing the same
11/06/2014US20140327042 Semiconductor electrostatic protection circuit device
11/06/2014US20140327041 Semiconductor device and manufacturing method thereof
11/06/2014US20140327040 Power semiconductor device
11/06/2014US20140327039 Trench type power transistor device
11/06/2014US20140327038 Power semiconductor and manufacturing method thereof
11/06/2014US20140327019 Wide bandgap semiconductor device
11/06/2014US20140327017 Silicon carbide barrier diode
11/06/2014US20140327016 Group iii nitride semiconductor frequency multiplier and method thereof
11/06/2014US20140327015 Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method
11/06/2014US20140327013 Method for manufacturing a thick eptaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
11/06/2014US20140327012 Hemt transistors consisting of (iii-b)-n wide bandgap semiconductors comprising boron
11/06/2014US20140327011 Iii-nitride transistor layout
11/06/2014US20140327010 Avalanche energy handling capable iii-nitride transistors
11/06/2014US20140327006 Active Device Substrate and Manufacturing Method Thereof
11/06/2014US20140327001 Method for manufacturing oxide semiconductor thin film transistor, and active operating display device and active operating sensor device using same
11/06/2014US20140327000 Semiconductor device and method for manufacturing the same
11/06/2014US20140326999 Semiconductor Device
11/06/2014US20140326998 Semiconductor Device and Manufacturing Method Thereof
11/06/2014US20140326996 Semiconductor device and manufacturing method thereof
11/06/2014US20140326994 Semiconductor Device
11/06/2014US20140326992 Semiconductor device
11/06/2014US20140326991 Semiconductor device
11/06/2014US20140326989 Active device
11/06/2014US20140326955 Planar transistors with nanowires cointegrated on a soi utbox substrate
11/06/2014US20140326953 Techniques for forming contacts to quantum well transistors
11/06/2014US20140326952 Silicon and silicon germanium nanowire structures
11/06/2014US20140326951 Field effect power transistors
11/06/2014US20140326950 Stress Relieving Semiconductor Layer
11/04/2014US8879598 Emitting device with compositional and doping inhomogeneities in semiconductor layers
11/04/2014US8879326 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
11/04/2014US8879014 TFT-LCD array substrate manufacturing method
11/04/2014US8879012 Array substrate having a shielding pattern, and a liquid crystal display device having the same
11/04/2014US8879011 Display device and method for manufacturing the same
11/04/2014US8878757 Display device and method of driving the same
11/04/2014US8878594 IGBT device with buried emitter regions
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