Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2015
01/06/2015US8928120 Wafer edge protection structure
01/06/2015US8928118 Processes and structures for IC fabrication
01/06/2015US8928116 Power device integration on a common substrate
01/06/2015US8928115 Semiconductor package having internal shunt and solder stop dimples
01/06/2015US8928113 Layout scheme and method for forming device cells in semiconductor devices
01/06/2015US8928112 Shallow trench isolation
01/06/2015US8928111 Transistor with high breakdown voltage having separated drain extensions
01/06/2015US8928100 Spin transfer torque cell for magnetic random access memory
01/06/2015US8928099 Micromechanical component and method for the manufacture of same
01/06/2015US8928095 Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof
01/06/2015US8928094 Strained asymmetric source/drain
01/06/2015US8928093 FinFET body contact and method of making same
01/06/2015US8928092 Semiconductor devices and methods of fabricating the same
01/06/2015US8928090 Self-aligned contact structure for replacement metal gate
01/06/2015US8928089 Semiconductor structure and method for forming the same
01/06/2015US8928088 Integrated circuits having dummy gate electrodes and methods of forming the same
01/06/2015US8928087 Semiconductor device
01/06/2015US8928086 Strained finFET with an electrically isolated channel
01/06/2015US8928084 ESD protection device and method of forming an ESD protection device
01/06/2015US8928083 Diode structure and method for FINFET technologies
01/06/2015US8928082 JLT (junction-less transistor) device and method for fabricating the same
01/06/2015US8928081 Semiconductor device having display device
01/06/2015US8928079 MOS device with low injection diode
01/06/2015US8928078 Double diffused metal oxide semiconductor device and manufacturing method thereof
01/06/2015US8928077 Superjunction structures for power devices
01/06/2015US8928075 Power integrated circuit including series-connected source substrate and drain substrate power MOSFETs
01/06/2015US8928074 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
01/06/2015US8928073 Semiconductor devices including guard ring structures
01/06/2015US8928072 Semiconductor device
01/06/2015US8928071 Semiconductor device including a MOSFET and Schottky junction
01/06/2015US8928070 Trench type power transistor device with super junction
01/06/2015US8928068 Vertical semiconductor device with thinned substrate
01/06/2015US8928067 Bulk fin-field effect transistors with well defined isolation
01/06/2015US8928066 Integrated circuit with power and sense transistors
01/06/2015US8928065 Trench DMOS device with improved termination structure for high voltage applications
01/06/2015US8928064 Gate stack of boron semiconductor alloy, polysilicon and high-K gate dielectric for low voltage applications
01/06/2015US8928063 Non-volatile memory device and method for fabricating the same
01/06/2015US8928062 Nonvolatile semiconductor memory device and manufacturing method thereof
01/06/2015US8928061 Three dimensional NAND device with silicide containing floating gates
01/06/2015US8928060 Architecture to improve cell size for compact array of split gate flash cell
01/06/2015US8928059 Nonvolatile memory device and method for fabricating the same
01/06/2015US8928057 Uniform finFET gate height
01/06/2015US8928056 Nonvolatile semiconductor memory device
01/06/2015US8928051 Metal oxide semiconductor (MOS) device with locally thickened gate oxide
01/06/2015US8928050 Electronic device including a schottky contact
01/06/2015US8928049 High efficiency module
01/06/2015US8928048 Methods of forming semiconductor device with self-aligned contact elements and the resulting device
01/06/2015US8928047 MOSFET with source side only stress
01/06/2015US8928046 Transistor and method of fabricating the same
01/06/2015US8928045 Semiconductor device
01/06/2015US8928044 Display device, switching circuit and field effect transistor
01/06/2015US8928043 High voltage FET device with voltage sensing
01/06/2015US8928042 Structure having plural conductive regions and process for production thereof
01/06/2015US8928040 Semiconductor device including line-type active region and method for manufacturing the same
01/06/2015US8928039 Semiconductor device including heterojunction field effect transistor and Schottky barrier diode
01/06/2015US8928038 Field effect transistor containing a group III nitride semiconductor as main component
01/06/2015US8928037 Heterostructure power transistor with AlSiN passivation layer
01/06/2015US8928035 Gallium nitride devices with gallium nitride alloy intermediate layer
01/06/2015US8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer
01/06/2015US8928033 Semiconductor device
01/06/2015US8928032 Fully isolated LIGBT and methods for forming the same
01/06/2015US8928031 Nanotube semiconductor devices
01/06/2015US8928030 Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device
01/06/2015US8928029 Single-band and dual-band infrared detectors
01/06/2015US8928027 Semiconductor light emitting device
01/06/2015US8928024 Optical device and method for manufacturing the same
01/06/2015US8928022 Light-emitting device
01/06/2015US8928011 Light-emitting device and lighting device
01/06/2015US8928006 Substrate structure, method of forming the substrate structure and chip comprising the substrate structure
01/06/2015US8928004 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
01/06/2015US8928003 Nitride semiconductor device
01/06/2015US8928002 Semiconductor device and method of manufacturing semiconductor device
01/06/2015US8928000 Nitride semiconductor wafer including different lattice constants
01/06/2015US8927999 Edge termination by ion implantation in GaN
01/06/2015US8927997 Substrate including thin film transistors and organic light emitting display apparatus including the substrate
01/06/2015US8927995 Thin film transistor with anti-diffusion area that prevents metal atoms and/or ions from source/drain electrodes from shortening the channel length and display substrate having the thin film transistor
01/06/2015US8927994 Display device
01/06/2015US8927993 Array substrate for fringe field switching mode liquid crystal display and method of manufacturing the same
01/06/2015US8927990 Semiconductor device and manufacturing method thereof
01/06/2015US8927986 P-type metal oxide semiconductor
01/06/2015US8927985 Semiconductor device
01/06/2015US8927984 Rotated channel semiconductor field effect transistor
01/06/2015US8927983 Thin film transistor substrate and method fabricating the same
01/06/2015US8927982 Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
01/06/2015US8927981 Semiconductor device and method for manufacturing the same
01/06/2015US8927974 Display apparatus and image pickup apparatus
01/06/2015US8927972 Current-amplifying transistor device and current-amplifying, light-emitting transistor device
01/06/2015US8927970 Organic electroluminescence device and method for manufacturing the same
01/06/2015US8927969 Doped graphene electronic materials
01/06/2015US8927968 Accurate control of distance between suspended semiconductor nanowires and substrate surface
01/06/2015US8927967 Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof
01/06/2015US8927966 Dynamic random access memory unit and method for fabricating the same
01/06/2015US8927964 Photodetection
01/06/2015US8927963 Semiconductor memory cell, device, and method for manufacturing the same
01/06/2015US8927962 Group III nitride semiconductor optical device
01/06/2015US8927961 Semiconductor light emitting device and method for manufacturing the same
01/06/2015US8927960 Gallium nitride based light emitting diode
01/06/2015US8927957 Sidewall diode driving device and memory using same
01/06/2015US8927438 Methods for manufacturing high dielectric constant films
01/06/2015US8927432 Continuously scalable width and height semiconductor fins
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