| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/08/2015 | DE102010016455B4 Halbleiterbauelement, Herstellungsverfahren für ein Halbleiterbauelement, sowie integrierte Leistungsschaltung A semiconductor device manufacturing method for a semiconductor device, and power integrated circuit |
| 01/07/2015 | EP2822040A1 Nanodevice and manufacturing method for same |
| 01/07/2015 | EP2822039A1 Semiconductor device |
| 01/07/2015 | EP2822038A1 Insulated gate bipolar transistor |
| 01/07/2015 | EP2822027A2 Method for manufacturing a double-gate electronic memory cell and related memory cell |
| 01/07/2015 | EP2820681A1 High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications |
| 01/07/2015 | EP2820680A1 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications |
| 01/07/2015 | EP2820679A1 Power field effect transistor |
| 01/07/2015 | EP2820672A2 Wire arrangement for an electronic circuit and method of manufacturing the same |
| 01/07/2015 | EP2820403A1 Molecular sensor based on virtual buried nanowire |
| 01/07/2015 | CN204088330U 可变电容器以及半导体器件 Variable capacitor and a semiconductor device |
| 01/07/2015 | CN204088329U 双向触发二极管芯片 DIAC chip |
| 01/07/2015 | CN204088328U 一种新型双栅极沟槽mos单元 A new dual-gate trench mos unit |
| 01/07/2015 | CN204088327U 鳍式场效晶体管 Fin field-effect transistors |
| 01/07/2015 | CN204088326U 包括导电电极的电子装置 The electronic device comprises a conductive electrode |
| 01/07/2015 | CN204088325U 用于集成电路中的器件 For the integrated circuit device |
| 01/07/2015 | CN204088324U 一种高压驱动电路的隔离结构 A high voltage driving circuit isolation structure of |
| 01/07/2015 | CN204088320U 高饱和容量的图像传感器像素 High saturation capacity of the image sensor pixel |
| 01/07/2015 | CN104272483A 用于在电储能器中使用的介电材料 The dielectric material for use in electrical energy storage vessel |
| 01/07/2015 | CN104272464A 金属-半导体-金属(msm)异质结二极管 Metal - semiconductor - metal (msm) heterojunction diode |
| 01/07/2015 | CN104272463A 薄膜晶体管和显示装置 A thin film transistor and a display device |
| 01/07/2015 | CN104272462A 氧化物半导体薄膜晶体管的制备方法、使用该晶体管的有源操作显示装置和有源操作传感器装置 Preparation oxide semiconductor thin film transistor, using the active transistor operation display device and an active operation sensor means |
| 01/07/2015 | CN104272461A 用于增加金属氧化物半导体层的电导率的方法 Increases the conductivity of the metal oxide semiconductor layer is a method for |
| 01/07/2015 | CN104272452A 互补金属氧化物半导体(cmos)器件和方法 Complementary metal oxide semiconductor (cmos) devices and methods |
| 01/07/2015 | CN104272444A 具突变结的隧穿晶体管的制造方法 With abrupt junction tunneling transistor manufacturing method |
| 01/07/2015 | CN104272442A 半导体器件的制造方法 The method of manufacturing a semiconductor device |
| 01/07/2015 | CN104272372A 显示装置、制造方法和电子设备 Display device, and electronic equipment manufacturing method |
| 01/07/2015 | CN104272179A 液晶显示面板、液晶显示装置和薄膜晶体管阵列基板 Means a thin film transistor array substrate and a liquid crystal display panel, liquid crystal display |
| 01/07/2015 | CN104272074A 压力传感器 Pressure sensors |
| 01/07/2015 | CN104269445A 快恢复二极管及快恢复二极管的制作方法 Fast recovery diodes and fast recovery diode production methods |
| 01/07/2015 | CN104269444A 快恢复二极管及快恢复二极管的制作方法 Fast recovery diodes and fast recovery diode production methods |
| 01/07/2015 | CN104269443A 一种恒流二极管 One kind of constant current diode |
| 01/07/2015 | CN104269442A 薄膜晶体管及像素结构 A thin film transistor and the pixel structure |
| 01/07/2015 | CN104269441A 等间距固定电荷区soi耐压结构及soi功率器件 Spaced fixed charge zone structure and soi soi pressure power devices |
| 01/07/2015 | CN104269440A 堆栈式n型晶体管以及静电保护电路 Stacked n-type transistor and electrostatic protection circuit |
| 01/07/2015 | CN104269439A 一种嵌入层异质结隧穿场效应晶体管及其制备方法 An embedded layer heterojunction tunneling field effect transistor and its preparation method |
| 01/07/2015 | CN104269438A 无结场效应晶体管及其制备方法 No junction field effect transistor and its preparation method |
| 01/07/2015 | CN104269437A 一种具有双层屏蔽环的ldmos器件及其制备方法 Ldmos device and having a double shield ring preparation |
| 01/07/2015 | CN104269436A 采用两种性质的本征应变膜的应变ldmos器件 Strain ldmos device uses two properties intrinsic membrane strain |
| 01/07/2015 | CN104269435A 一种无结晶体管 A non-junction transistor |
| 01/07/2015 | CN104269434A 一种高电子迁移率晶体管 A high-electron mobility transistor |
| 01/07/2015 | CN104269433A 具有复合沟道层的氮化镓基增强型异质结场效应晶体管 Enhanced GaN-based heterojunction field effect transistor having a composite channel layer |
| 01/07/2015 | CN104269400A 一种新型栅极接地nmos结构esd保护器件及其制作方法 A new gate structure esd nmos grounding protection device and manufacturing method thereof |
| 01/07/2015 | CN104269357A 功率半导体器件及其制造方法 Power semiconductor device and manufacturing method thereof |
| 01/07/2015 | CN103123911B 像素结构及其制作方法 Pixel structure and manufacturing method thereof |
| 01/07/2015 | CN102842598B 用于功率半导体器件的改进的锯齿电场漂移区域结构 Sawtooth electric field for improving the power semiconductor device of the structure of the drift region |
| 01/07/2015 | CN102832247B 在基于沟槽的碳化硅功率器件中的分裂栅结构 Split-gate structure in the trenches on the silicon carbide power devices |
| 01/07/2015 | CN102800705B 一种金属氧化物半导体薄膜晶体管的制作方法 A method of making a metal oxide semiconductor thin film transistor |
| 01/07/2015 | CN102782857B 半导体装置 Semiconductor device |
| 01/07/2015 | CN102779851B 一种无结场效应晶体管 A non-junction field effect transistor |
| 01/07/2015 | CN102760648B 平面高压晶体管的分压环的制造方法 Planar transistor manufacturing method of the partial pressure of high pressure ring |
| 01/07/2015 | CN102738218B 集成电路及其制造方法 IC and its manufacturing method |
| 01/07/2015 | CN102723358B 绝缘栅场效应晶体管及其制造方法 Insulated gate field effect transistor and manufacturing method thereof |
| 01/07/2015 | CN102694034B 半导体装置 Semiconductor device |
| 01/07/2015 | CN102683400B 自对准抬升外基区锗硅异质结双极晶体管及其制备方法 Self-aligned SiGe uplift outer base heterojunction bipolar transistor and its preparation method |
| 01/07/2015 | CN102683192B 用后期鳍片蚀刻形成于图案化sti区上的鳍式管 Etching with a late-fins formed on the patterned region of fin tube sti |
| 01/07/2015 | CN102664194B 薄膜晶体管 Thin film transistor |
| 01/07/2015 | CN102646579B 一种sonos结构及制造方法 One kind of structure and manufacturing method sonos |
| 01/07/2015 | CN102637738B 高压多栅极元件及其制造方法 High pressure multi-gate device and manufacturing method |
| 01/07/2015 | CN102629664B 一种阵列基板及其制作方法和显示装置 One kind of array substrate and a display device and manufacturing method thereof |
| 01/07/2015 | CN102623459B 一种薄膜晶体管存储器及其制备方法 A thin film transistor memory and preparation method |
| 01/07/2015 | CN102610646B 半导体器件侧墙空洞层结构及其制备方法 Side wall cavity semiconductor device layer structure and preparation method |
| 01/07/2015 | CN102576726B 隧道场效应晶体管及其制造方法 Tunneling field effect transistor and manufacturing method thereof |
| 01/07/2015 | CN102549729B 用于半导体衬底上的大面积的基于氮化镓或其它氮化物的结构的应力补偿 Stress Compensation for a large area on a semiconductor substrate of gallium nitride or other nitride structure based on the |
| 01/07/2015 | CN102544097B 半导体结构及其制造方法 Semiconductor structure and manufacturing method |
| 01/07/2015 | CN102468326B 接触电极制造方法和半导体器件 Contact electrode and the semiconductor device manufacturing method |
| 01/07/2015 | CN102446729B 用湿式化学方法形成受控底切而有优异完整性的高介电系数栅极堆栈 Forming a wet chemical method and has excellent controlled undercut the integrity of high dielectric constant gate stack |
| 01/07/2015 | CN102420228B 抑制gidl效应的后栅极工艺半导体器件及其制备方法 Gidl inhibition effect after gate process for preparing a semiconductor device and method |
| 01/07/2015 | CN102412267B 在高压晶体管结构的端处的栅极回拉 At the gate end of the high-voltage transistor structure pullback |
| 01/07/2015 | CN102237399B 具有金属栅极的半导体元件及其制作方法 A semiconductor device and method of making the metal gate |
| 01/07/2015 | CN102195629B 交流二线式开关 AC-wire switch |
| 01/07/2015 | CN102163620B n沟道晶体管及反相器电路 n-channel transistor and an inverter circuit |
| 01/07/2015 | CN102157527B 半导体存储器件 A semiconductor memory device |
| 01/07/2015 | CN102122656B 竖直型集成电路器件和存储器件 Vertical type integrated circuit device and storage device |
| 01/07/2015 | CN102117737B 减小半导体器件中ler的方法及半导体器件 Reducing the semiconductor device and method of a semiconductor device ler |
| 01/07/2015 | CN101872783B 垂直超结双扩散金属氧化物半导体器件及制造方法 Vertical metal oxide semiconductor device and manufacturing method Superjunction double diffusion |
| 01/07/2015 | CN101866922B 一种用于esd保护电路的ggnmos器件 Ggnmos devices for esd protection circuit |
| 01/07/2015 | CN101819974B 沟槽式金属氧化物半导体晶体管 Grooved metal-oxide-semiconductor transistors |
| 01/07/2015 | CN101771077B 具静电放电保护的水平扩散金属氧化物半导体晶体管元件 ESD protection levels with diffused metal oxide semiconductor transistor element |
| 01/07/2015 | CN101515590B 薄膜晶体管数组基板 The thin film transistor array substrate |
| 01/06/2015 | US8930866 Method of converting between non-volatile memory technologies and system for implementing the method |
| 01/06/2015 | US8929381 Header replication in accelerated TCP (Transport Control Protocol) stack processing |
| 01/06/2015 | US8929145 Nonvolatile memory device, programming method thereof and memory system including the same |
| 01/06/2015 | US8929135 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell |
| 01/06/2015 | US8928850 Liquid crystal display panel based on three-dimensional transistor and liquid crystal display device using the same |
| 01/06/2015 | US8928831 TFT-LCD array substrate and manufacturing method thereof |
| 01/06/2015 | US8928828 Array substrate, manufacturing method thereof, liquid crystal panel, and display device |
| 01/06/2015 | US8928382 Multiple gate semiconductor devices and their applications |
| 01/06/2015 | US8928154 Semiconductor module |
| 01/06/2015 | US8928152 Semiconductor device including contact plug and method of manufacturing the same |
| 01/06/2015 | US8928148 Semiconductor component and device provided with heat dissipation means |
| 01/06/2015 | US8928147 Semiconductor device and method of manufacturing the same |
| 01/06/2015 | US8928143 Semiconductor device and method of manufacturing the same |
| 01/06/2015 | US8928141 Method for fabricating two substrates connected by at least one mechanical and electrically conductive connection and structure obtained |
| 01/06/2015 | US8928133 Interlocking type solder connections for alignment and bonding of wafers and/or substrates |
| 01/06/2015 | US8928129 Semiconductor packaging for a memory device and a fabricating method thereof |
| 01/06/2015 | US8928124 High aspect ratio and reduced undercut trench etch process for a semiconductor substrate |
| 01/06/2015 | US8928123 Through via structure including a conductive portion and aligned solder portion |
| 01/06/2015 | US8928122 Wiring structure, thin film transistor array substrate including the same, and display device |
| 01/06/2015 | US8928121 Thermal stress reduction |