Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2015
01/08/2015US20150011064 Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
01/08/2015US20150011063 Methods of fabricating semiconductor structures
01/08/2015US20150011062 Three dimensional floating gate nand memory
01/08/2015US20150011061 Complementary stress memorization technique layer method
01/08/2015US20150011060 Dual epi cmos integration for planar substrates
01/08/2015US20150011059 High-k metal gate devices with a dual work function and methods for making the same
01/08/2015US20150011058 Method of Manufacturing HEMTs with an Integrated Schottky Diode
01/08/2015US20150011057 Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits
01/08/2015US20150011056 Variation Resistant MOSFETs with Superior Epitaxial Properties
01/08/2015US20150011055 Manufacturing method of low temperature poly-silicon tft array substrate
01/08/2015US20150011049 Semiconductor device and manufacturing method thereof
01/08/2015US20150011048 Semiconductor device and method for manufacturing semiconductor device
01/08/2015US20150011047 Method for fabricating igzo layer and tft
01/08/2015US20150011046 Semiconductor device and method for manufacturing semiconductor device
01/08/2015US20150011045 Method of forming oxide thin film and method of fabricating oxide thin film transistor using hydrogen peroxide
01/08/2015US20150010705 Methods for Forming Templated Materials
01/08/2015US20150008977 Soi bipolar junction transistor with substrate bias voltages
01/08/2015US20150008563 Composite of III-Nitride Crystal on Laterally Stacked Substrates
01/08/2015US20150008562 Pnp bipolar junction transistor fabrication using selective epitaxy
01/08/2015US20150008561 Bipolar transistor having sinker diffusion under a trench
01/08/2015US20150008559 Bipolar junction transistor with multiple emitter fingers
01/08/2015US20150008558 Self-aligned bipolar junction transistors
01/08/2015US20150008557 Semiconductor device
01/08/2015US20150008556 Isolation trench through backside of substrate
01/08/2015US20150008539 Semiconductor device
01/08/2015US20150008538 Partially recessed channel core transistors in replacement gate flow
01/08/2015US20150008537 N-type mosfet and method for manufacturing the same
01/08/2015US20150008536 Semiconductor device structure and method for forming a semiconductor device structure
01/08/2015US20150008535 Devices including fin transistors robust to gate shorts and methods of making the same
01/08/2015US20150008532 Transistor structure with silicided source and drain extensions and process for fabrication
01/08/2015US20150008530 Semiconductor device and method of forming the same
01/08/2015US20150008528 Diffusion barrier and method of formation thereof
01/08/2015US20150008527 Integrated circuit structure having selectively formed metal cap
01/08/2015US20150008526 Semiconductor device
01/08/2015US20150008524 Integrated circuit device structure and fabrication method thereof
01/08/2015US20150008523 Compensated well esd diodes with reduced capacitance
01/08/2015US20150008521 Transistor having a stressed body
01/08/2015US20150008519 Power integrated device having surface corrugations
01/08/2015US20150008518 Flatband shift for improved transistor performance
01/08/2015US20150008517 Semiconductor Device with Vertical Transistor Channels and a Compensation Structure
01/08/2015US20150008516 Semiconductor device with buried gate electrode structures
01/08/2015US20150008515 Trench gate mosfet
01/08/2015US20150008514 Trench gate mosfet
01/08/2015US20150008513 Trench type power semiconductor device and fabrication method thereof
01/08/2015US20150008512 Method of Manufacturing a Semiconductor Device with Device Separation Structures and Semiconductor Device
01/08/2015US20150008511 Bond pad stack for transistors
01/08/2015US20150008510 Semiconductor device
01/08/2015US20150008509 Method for manufacturing a double-gate electronic memory cell and associated memory cell
01/08/2015US20150008508 Semiconductor device and method of manufacturing the same
01/08/2015US20150008504 Non-volatile memory structure and manufacturing method thereof
01/08/2015US20150008500 Non-volatile semiconductor memory and method for producing non-volatile semiconductor memory
01/08/2015US20150008499 Vertical semiconductor device
01/08/2015US20150008498 Semiconductor Component Arrangement Comprising a Trench Transistor
01/08/2015US20150008497 Capacitor
01/08/2015US20150008495 Semiconductor device and method for fabricating the same
01/08/2015US20150008492 Semiconductor device and method of manufacturing same
01/08/2015US20150008491 Metal Gate Structure
01/08/2015US20150008490 Fluctuation Resistant FinFET
01/08/2015US20150008489 Fin-type field effect transistor and method of fabricating the same
01/08/2015US20150008488 Uniform height replacement metal gate
01/08/2015US20150008487 Junction field-effect transistor with raised source and drain regions formed by selective epitaxy
01/08/2015US20150008485 High electron mobility transistors and methods of fabricating the same
01/08/2015US20150008484 High mobility strained channels for fin-based transistors
01/08/2015US20150008483 Fin Structure of Semiconductor Device
01/08/2015US20150008481 Lateral power semiconductor transistors
01/08/2015US20150008480 Semiconductor component
01/08/2015US20150008479 Igbt and igbt manufacturing method
01/08/2015US20150008478 Semiconductor device and manufacturing method of the same
01/08/2015US20150008477 IGBT Having an Emitter Region with First and Second Doping Regions
01/08/2015US20150008454 Substrate, semiconductor device, and method of manufacturing the same
01/08/2015US20150008453 Substrate, semiconductor device, and method of manufacturing the same
01/08/2015US20150008452 Semiconductor device and method of fabricating the same
01/08/2015US20150008450 Wide band gap semiconductor device
01/08/2015US20150008449 Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/2015US20150008448 Metal-oxide-semiconductor (mos) devices with increased channel periphery and methods of manufacture
01/08/2015US20150008447 Silicon Carbide Device and a Method for Manufacturing A Silicon Carbide Device
01/08/2015US20150008446 Semiconductor devices and methods of manufacture
01/08/2015US20150008445 III-Nitride Device and FET in a Package
01/08/2015US20150008444 Device Comprising a III-N Layer Stack With Improved Passivation Layer and Associated Manufacturing Method
01/08/2015US20150008442 Isolation structure in gallium nitride devices and integrated circuits
01/08/2015US20150008440 Semiconductor Device and Method of Manufacturing the Same
01/08/2015US20150008439 Light emitting apparatus and method for manufacturing the same
01/08/2015US20150008437 Thin film transistor and manufacturing method thereof
01/08/2015US20150008436 Display substrate and method of manufacturing the same
01/08/2015US20150008430 Semiconductor device and manufacturing method thereof
01/08/2015US20150008429 Method of manufacturing thin film transistor substrate and thin film transistor substrate manufactured by the method
01/08/2015US20150008428 Semiconductor device and method for manufacturing semiconductor device
01/08/2015US20150008409 Organic light-emitting device, display apparatus, image information-processing apparatus, and image-forming apparatus
01/08/2015DE112013001928T5 Isolierschicht, Verfahren zum Herstellen einer Halbleitervorrichtung und Halbleitervorrichtung Insulating layer, A method of manufacturing a semiconductor device and semiconductor device
01/08/2015DE112013001218T5 Drucksensorgehäuse und Verfahren zu seiner Herstellung Pressure sensor package and method for its preparation
01/08/2015DE102014211904A1 Halbleitervorrichtung Semiconductor device
01/08/2015DE102014211903A1 Halbleitervorrichtung mit breiter Bandlücke A semiconductor device having wide bandgap
01/08/2015DE102014108821A1 Verfahren zum Herstellen einer Halbleitervorrichtung mit vergrabenen Gateelektrodenstrukturen und Halbleitervorrichtung A method of manufacturing a semiconductor device having buried gate electrode structures and the semiconductor device
01/08/2015DE102014108790A1 Verfahren zum Herstellen einer Halbleitervorrichtung mit Vorrichtungstrennungsstrukturen und Halbleitervorrichtung A method of manufacturing a semiconductor device having device isolation structures and the semiconductor device
01/08/2015DE102014108786A1 Halbleitervorrichtung Semiconductor device
01/08/2015DE102013213026A1 Feldplatten-Trench-FET sowie ein Halbleiterbauelement Field plate trench FET and a semiconductor device
01/08/2015DE102013213007A1 Halbleiterbauelement, Trench-Feldeffekttransistor, Verfahren zur Herstellung eines Trench-Feldeffekttransistors und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device, trench field-effect transistor, method of manufacturing a trench field effect transistor and method of manufacturing a semiconductor device
01/08/2015DE102013212037A1 Schaltregler zur Ansteuerung eines Leuchtmittels Switching regulator for controlling a light bulb
01/08/2015DE102013212019A1 Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung Formulations for the production of indium oxide-containing layers, processes for their preparation and their use
01/08/2015DE102013212017A1 Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung Process for the preparation of indium alkoxide compounds, indium alkoxide, the compounds obtainable according to the method-compounds and their use
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