Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2015
01/13/2015US8933483 Semiconductor device
01/13/2015US8933473 Method, apparatus and system for providing light source structures on a flexible substrate
01/13/2015US8933472 Array substrate and display device comprising the same
01/13/2015US8933471 Organic EL panel, display device using same, and method for producing organic EL panel
01/13/2015US8933470 Display apparatus having a plurality of stacked organic and inorganic layers and method of manufacturing the same
01/13/2015US8933469 High-voltage light-emitting device
01/13/2015US8933468 Electronic device with reduced non-device edge area
01/13/2015US8933466 Semiconductor element
01/13/2015US8933465 Semiconductor device
01/13/2015US8933464 SiC epitaxial wafer and semiconductor device
01/13/2015US8933463 Semiconductor element, semiconductor device, and power converter
01/13/2015US8933462 Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method
01/13/2015US8933461 III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
01/13/2015US8933460 Array substrate for fringe field switching mode liquid crystal display device
01/13/2015US8933458 Semiconductor device structures and methods of forming semiconductor structures
01/13/2015US8933457 3D memory array including crystallized channels
01/13/2015US8933456 Germanium-containing release layer for transfer of a silicon layer to a substrate
01/13/2015US8933455 Display device comprising pixel
01/13/2015US8933454 Array substrate for liquid crystal display and method for manufacturing the same
01/13/2015US8933452 Active matrix substrate, production method, and display device
01/13/2015US8933449 Apparatus having a dielectric containing scandium and gadolinium
01/13/2015US8933446 High electron mobility transistors and methods of manufacturing the same
01/13/2015US8933445 Functional thin film for touch screen and method for forming the same
01/13/2015US8933444 Display device
01/13/2015US8933442 Thin film transistor substrate and display
01/13/2015US8933439 Organic light-emitting diode with enhanced efficiency
01/13/2015US8933435 Tunneling transistor
01/13/2015US8933434 Elemental semiconductor material contact for GaN-based light emitting diodes
01/13/2015US8933433 Method and structure for receiving a micro device
01/13/2015US8933432 Light-emitting device
01/13/2015US8933431 Dual-plane memory array
01/13/2015US8933428 Phase change memory
01/13/2015US8933427 Variable resistance memory device and method for fabricating the same
01/13/2015US8933394 Semiconductor device having at least a transistor cell with a second conductive type region surrounding a wall region and being insulated from both gate electrode and source electrode and solid state relay using same
01/13/2015US8933343 Electronic structure and electronic package component for increasing the bonding strength between inside and outside electrodes
01/13/2015US8932964 Method of forming a dielectric layer having an ONO structure using an in-situ process
01/13/2015US8932960 Methods for isolating portions of a loop of pitch-multiplied material and related structures
01/13/2015US8932957 Method of fabricating a FinFET device
01/13/2015US8932949 FinFET structure and method to adjust threshold voltage in a FinFET structure
01/13/2015US8932948 Memory cell floating gate replacement
01/13/2015US8932946 Power semiconductor device
01/13/2015US8932945 Wafer alignment system and method
01/13/2015US8932944 Silicon carbide semiconductor device manufacturing method
01/13/2015US8932942 Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contact
01/13/2015US8932941 Graphene device and method of fabricating the same
01/13/2015US8932940 Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication
01/13/2015US8932932 Highly scalable trench capacitor
01/13/2015US8932931 Self-aligned emitter-base region
01/13/2015US8932929 Thin film transistor memory and its fabricating method
01/13/2015US8932928 Power MOSFET structure and method
01/13/2015US8932927 Semiconductor structure and method for manufacturing the same
01/13/2015US8932926 Method for forming gate oxide film of sic semiconductor device using two step oxidation process
01/13/2015US8932925 Split-gate non-volatile memory (NVM) cell and device structure integration
01/13/2015US8932924 Trench-based power semiconductor devices with increased breakdown voltage characteristics
01/13/2015US8932923 Semiconductor gate structure for threshold voltage modulation and method of making same
01/13/2015US8932922 Method of fabricating semiconductor device having dual gate
01/13/2015US8932921 N/P metal crystal orientation for high-k metal gate Vt modulation
01/13/2015US8932919 Vertical stacking of graphene in a field-effect transistor
01/13/2015US8932917 Thin film transistor array panel and method for manufacturing the same
01/13/2015US8932916 Method for fabricating thin-film transistor
01/13/2015US8932915 Semiconductor device and method for manufacturing the same
01/13/2015US8932913 Manufacturing method of semiconductor device
01/13/2015US8932912 One-time programmable device
01/13/2015US8932911 Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects
01/13/2015US8932904 Semiconductor device and method of manufacturing the same
01/13/2015US8932903 Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
01/13/2015US8932902 Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same
01/13/2015US8932893 Method of fabricating MEMS device having release etch stop layer
01/13/2015US8932889 Display, method of manufacturing the same, and electronic unit
01/13/2015US8932444 Sputtering target of nonmagnetic-particle-dispersed ferromagnetic material
01/13/2015US8931351 Bending sensor
01/13/2015CA2795825C Polycrystalline silicon
01/08/2015WO2015003163A1 Bond pad stack for transistors
01/08/2015WO2015003102A1 Bipolar transistor having sinker diffusion under a trench
01/08/2015WO2015003100A1 Partially recessed channel core transistors in replacement gate flow
01/08/2015WO2015002995A1 Photoluminescent semiconductor nanocrystal-based luminescent solar concentrators
01/08/2015WO2015002923A1 Formation of self-aligned source for split-gate non-volatile memory cell
01/08/2015WO2015002840A1 Nand string containing self-aligned control gate sidewall cladding
01/08/2015WO2015002206A1 Semiconductor device and dielectric film
01/08/2015WO2015002204A1 Production method for organic transistor element
01/08/2015WO2015001926A1 Semiconductor device
01/08/2015WO2015001863A1 Method for manufacturing silicon carbide semiconductor device
01/08/2015WO2015001813A1 Compound sensor
01/08/2015WO2015001755A1 Thin-film transistor element, method for manufacturing same, and display device
01/08/2015WO2015001557A1 Colloidal semiconductor metal chalcogenide nanostructures
01/08/2015WO2015001484A1 Method of flip-chip assembly of two electronic components by uv annealing, and assembly obtained
01/08/2015WO2015001399A1 Tunnel field-effect transistor (tfet) with supersteep sub-threshold swing
01/08/2015WO2015001302A1 Lateral power semiconductor transistors
01/08/2015WO2015000619A1 Field plate trench fet and a semiconductor component
01/08/2015WO2015000355A1 Method for manufacturing igbt
01/08/2015WO2015000267A1 Thin film transistor, manufacturing method of same, array substrate, and display
01/08/2015WO2015000205A1 Method for manufacturing cascaded stacked nanowire mos transistor
01/08/2015WO2015000203A1 Semiconductor device and manufacturing method therefor
01/08/2015US20150011081 Method of fabricating semiconductor device
01/08/2015US20150011070 Method for fabricating semiconductor device
01/08/2015US20150011069 Method for manufacturing p-type mosfet
01/08/2015US20150011068 FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure
01/08/2015US20150011067 Flatband shift for improved transistor performance
01/08/2015US20150011066 Semiconductor device with vertical gate and method of manufacturing the same
01/08/2015US20150011065 Semiconductor device and method for manufacturing the same
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