| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/14/2015 | CN104282742A 折叠栅控l形沟道低泄漏电流隧穿晶体管 Folding gated l-shaped channel low leakage current tunneling transistor |
| 01/14/2015 | CN104282741A 场截止型反向导通绝缘栅双极型晶体管及其制造方法 Field cut-off reverse-conducting insulated gate bipolar transistor and its manufacturing method |
| 01/14/2015 | CN104282740A 绝缘体上硅的横向p型绝缘栅双极晶体管 P-type silicon on insulator lateral insulated gate bipolar transistor |
| 01/14/2015 | CN104282739A 双极晶体管以及制造双极晶体管的方法 Bipolar transistor and a method of manufacturing a bipolar transistor |
| 01/14/2015 | CN104282738A 可减少功率器件导通电阻的栅极衬垫结构 Can reduce power device on-resistance gate pad structure |
| 01/14/2015 | CN104282737A 高集成度h形源漏栅辅控u形沟道高迁移率无结晶体管 Highly integrated h-shaped source and drain-gate auxiliary control u-shaped channel knotless high mobility transistor |
| 01/14/2015 | CN104282736A 一种复合电极及其制备方法、阵列基板和显示装置 A composite electrode and its preparation method, the array substrate and a display device |
| 01/14/2015 | CN104282735A 一种具有负离子注入钝化层的场效应晶体管 A passivation layer having a negative ion injection field effect transistor |
| 01/14/2015 | CN104282734A 与cmos工艺兼容的沟道隔离的原生器件及其制造方法 Native device compatible with cmos technology and its manufacturing method of trench isolation |
| 01/14/2015 | CN104282733A 半导体器件 Semiconductor devices |
| 01/14/2015 | CN104282732A 半导体装置 Semiconductor device |
| 01/14/2015 | CN104282694A 非易失性半导体存储器件及其制造方法 Non-volatile semiconductor memory device and manufacturing method thereof |
| 01/14/2015 | CN104282689A 嵌入frd的igbt器件及制造方法 Igbt embedded device and manufacturing method of frd |
| 01/14/2015 | CN104282686A 宽带隙半导体装置 A wide bandgap semiconductor device |
| 01/14/2015 | CN104282680A 一种纳米相变esd器件、纳米相变esd结构及其制备方法 Esd phase change nano devices, nano-structural phase transition and preparation method esd |
| 01/14/2015 | CN104282667A 一种mos 静电保护结构及保护方法 One kind mos electrostatic protection structure and protection methods |
| 01/14/2015 | CN104282665A 高压静电保护结构 High-voltage electrostatic protection structure |
| 01/14/2015 | CN104282645A 沟渠式功率半导体器件及其制作方法 Trench type power semiconductor device and manufacturing method |
| 01/14/2015 | CN104282627A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104282626A 制造具有器件分离结构的半导体器件的方法及半导体器件 Method for manufacturing a semiconductor device having a semiconductor device structure separating device |
| 01/14/2015 | CN104282625A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method |
| 01/14/2015 | CN104282574A 一种半导体装置以及其制造方法 A semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104282571A 鳍型场效应晶体管及其制造方法 Fin-type field effect transistor and manufacturing method thereof |
| 01/14/2015 | CN104282568A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method |
| 01/14/2015 | CN104282566A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming |
| 01/14/2015 | CN104282565A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming |
| 01/14/2015 | CN104282564A 半导体器件和鳍式场效应晶体管的形成方法 The method for forming a semiconductor device and a fin field effect transistor |
| 01/14/2015 | CN104282563A Ldmos器件及其形成方法 Device and method for forming Ldmos |
| 01/14/2015 | CN104282562A 鳍式场效应晶体管及其形成方法 Fin field-effect transistor and method of forming |
| 01/14/2015 | CN104282561A FinFET器件及其制作方法 FinFET device and manufacturing method thereof |
| 01/14/2015 | CN104282560A 级联堆叠纳米线mos晶体管制作方法 Cascade stacked nanowire transistors mos production methods |
| 01/14/2015 | CN104282559A 堆叠纳米线mos晶体管及其制作方法 Mos stacked nanowire transistors and its production method |
| 01/14/2015 | CN104282558A 一种无结纳米线FinFET及其制作方法 A non-knot nanowires FinFET and production methods |
| 01/14/2015 | CN104282544A 具有掩埋栅极电极结构的半导体器件制造方法及半导体器件 A buried gate electrode structure having a semiconductor device manufacturing method and semiconductor device |
| 01/14/2015 | CN104282543A 应用于沟槽型mos器件的沟槽栅及其制备方法 Its preparation method is applied to the trench gate trench mos devices |
| 01/14/2015 | CN104282541A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method |
| 01/14/2015 | CN104282540A 晶体管及其形成方法 Transistor and method of forming |
| 01/14/2015 | CN102769016B 一种抗辐射的cmos器件及其制备方法 Cmos devices, an anti-radiation and its preparation method |
| 01/14/2015 | CN102683429B 超大电流高频frd二极管芯片及制作方法 Large current high frequency frd diode chips and production methods |
| 01/14/2015 | CN102651359B 具有低阻值基材与低功率损耗的半导体结构 A semiconductor structure having low resistance and low power loss substrate |
| 01/14/2015 | CN102593168B 半导体器件和逆导igbt Semiconductor devices and reverse conducting igbt |
| 01/14/2015 | CN102593130B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN102593001B 向沟道中引入应变的方法和使用该方法制作的器件 Strain introduced into the channel in a method and a device produced using this method |
| 01/14/2015 | CN102593000B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN102574868B 取代苯并硫属并苯化合物、包含该化合物的薄膜以及包括该薄膜的有机半导体装置 And benzene substituted benzo chalcogen compound, a film comprising the compound and an organic semiconductor device comprising the film |
| 01/14/2015 | CN102569393B 晶体管、包括该晶体管的半导体器件及其制造方法 Transistor, a semiconductor device and a manufacturing method comprising the transistor |
| 01/14/2015 | CN102541136B 半导体器件 Semiconductor devices |
| 01/14/2015 | CN102496577B 非晶氧化物膜的制造方法 Method for producing an amorphous oxide film |
| 01/14/2015 | CN102376557B 掺杂的多晶硅栅极的制作方法、mos晶体管及其制作方法 Production methods doped polysilicon gate, mos transistor and its manufacturing method |
| 01/14/2015 | CN102354705B 半导体装置 Semiconductor device |
| 01/14/2015 | CN102292816B 有机半导体装置及其制造方法 The organic semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN102194880B 带有沟槽-氧化物-纳米管超级结的器件结构及制备方法 Oxide - - nanotube super junction device structures and trenches with preparation |
| 01/14/2015 | CN101673743B 半导体器件 Semiconductor devices |
| 01/13/2015 | US8935143 Semiconductor sensor reliability |
| 01/13/2015 | US8935117 Circuit and method for measuring voltage |
| 01/13/2015 | US8934066 Semiconductor device having stick drivers and a method of manufacturing the same |
| 01/13/2015 | US8933644 LED lamps with improved quality of light |
| 01/13/2015 | US8933568 Semiconductor device |
| 01/13/2015 | US8933566 Multilayer line trimming |
| 01/13/2015 | US8933565 Integrated circuit wiring fabrication and related methods and apparatus |
| 01/13/2015 | US8933563 Three-dimension circuit structure and semiconductor device |
| 01/13/2015 | US8933559 Carbon nanotube structures for enhancement of thermal dissipation from semiconductor modules |
| 01/13/2015 | US8933555 Semiconductor chip package |
| 01/13/2015 | US8933552 Semiconductor package |
| 01/13/2015 | US8933550 Structure of mixed semiconductor encapsulation structure with multiple chips and capacitors |
| 01/13/2015 | US8933542 Method to reduce magnetic film stress for better yield |
| 01/13/2015 | US8933538 Oxygen-doped gallium nitride single crystal substrate |
| 01/13/2015 | US8933537 Bipolar transistor having self-adjusted emitter contact |
| 01/13/2015 | US8933535 Wafer with spacer including horizontal member |
| 01/13/2015 | US8933534 Isolation structure of high-voltage driving circuit |
| 01/13/2015 | US8933533 Solid-state bidirectional switch having a first and a second power-FET |
| 01/13/2015 | US8933532 Schottky diode with buried layer in GaN materials |
| 01/13/2015 | US8933531 Semiconductor device having schottky diode structure |
| 01/13/2015 | US8933529 Method of manufacturing vertical pin diodes |
| 01/13/2015 | US8933528 Semiconductor fin isolation by a well trapping fin portion |
| 01/13/2015 | US8933521 Three-dimensional magnetic circuits including magnetic connectors |
| 01/13/2015 | US8933517 Semiconductor device comprising a dummy well |
| 01/13/2015 | US8933516 High capacity select switches for three-dimensional structures |
| 01/13/2015 | US8933515 Device structure, layout and fabrication method for uniaxially strained transistors |
| 01/13/2015 | US8933513 Semiconductor device |
| 01/13/2015 | US8933512 MOSFET and method for manufacturing the same |
| 01/13/2015 | US8933511 Semiconductor device |
| 01/13/2015 | US8933510 DEMOS formed with a through gate implant |
| 01/13/2015 | US8933509 Semiconductor device and method for fabricating the same |
| 01/13/2015 | US8933508 Memory with isolation structure |
| 01/13/2015 | US8933507 Metal/polysilicon gate trench power mosfet |
| 01/13/2015 | US8933506 Diode structures with controlled injection efficiency for fast switching |
| 01/13/2015 | US8933505 Three-dimensional semiconductor memory device |
| 01/13/2015 | US8933504 Semiconductor structure and method for forming the semiconductor structure |
| 01/13/2015 | US8933503 Advanced forming method and structure of local mechanical strained transistor |
| 01/13/2015 | US8933501 Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device |
| 01/13/2015 | US8933500 EEPROM-based, data-oriented combo NVM design |
| 01/13/2015 | US8933499 Asymmetrically stressed field effect transistor in dynamic cell |
| 01/13/2015 | US8933497 Semiconductor switch device and method of manufacturing semiconductor switch device |
| 01/13/2015 | US8933493 Semiconductor device with high voltage transistor |
| 01/13/2015 | US8933489 Compound semiconductor device and manufacturing method of the same |
| 01/13/2015 | US8933488 Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS |
| 01/13/2015 | US8933487 Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask |
| 01/13/2015 | US8933486 GaN based HEMTs with buried field plates |
| 01/13/2015 | US8933485 Compound semiconductor device and method of manufacturing the same |