| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/15/2015 | US20150014744 Semiconductor device |
| 01/15/2015 | US20150014743 IGBT with Emitter Electrode Electrically Connected with an Impurity Zone |
| 01/15/2015 | US20150014742 Semiconductor device and production method for semiconductor device |
| 01/15/2015 | US20150014741 Semiconductor device |
| 01/15/2015 | US20150014740 Monolithic Composite III-Nitride Transistor with High Voltage Group IV Enable Switch |
| 01/15/2015 | US20150014734 Light emitting device and light emitting device package |
| 01/15/2015 | US20150014707 Method for producing a mos stack on a diamond substrate |
| 01/15/2015 | US20150014706 Vertical Hetero Wide Bandgap Transistor |
| 01/15/2015 | US20150014704 Bipolar Transistor and a Method for Manufacturing a Bipolar Transistor |
| 01/15/2015 | US20150014703 III-NITRIDE Device with Solderable Front Metal |
| 01/15/2015 | US20150014701 III-Nitride Semiconductor Device with Reduced Electric Field |
| 01/15/2015 | US20150014700 Vertical iii-nitride semiconductor device with a vertically formed two dimensional electron gas |
| 01/15/2015 | US20150014699 Vertical transistors having p-type gallium nitride current barrier layers and methods of fabricating the same |
| 01/15/2015 | US20150014696 Gallium nitride power semiconductor device having a vertical structure |
| 01/15/2015 | US20150014691 Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film |
| 01/15/2015 | US20150014687 Semiconductor device |
| 01/15/2015 | US20150014684 Semiconductor device, measurement apparatus, and measurement method of relative permittivity |
| 01/15/2015 | US20150014683 Semiconductor device |
| 01/15/2015 | US20150014682 Semiconductor device |
| 01/15/2015 | US20150014679 Semiconductor device |
| 01/15/2015 | US20150014678 Semiconductor device, method of manufacturing the same and system for manufacturing the same |
| 01/15/2015 | US20150014677 Thin film transistor substrate and method of manufacturing the same |
| 01/15/2015 | US20150014641 Organic light emitting diode display |
| 01/15/2015 | US20150014637 Thin film transistor, and thin film transistor array panel and organic light emitting diode display including the same |
| 01/15/2015 | US20150014633 Tunnel field-effect transistors with a gate-swing broken-gap heterostructure |
| 01/15/2015 | US20150014632 Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices |
| 01/15/2015 | US20150014631 Gallium nitride nanowire based electronics |
| 01/15/2015 | US20150014630 Tunneling devices and methods of manufacturing the same |
| 01/15/2015 | US20150014629 Methods for coating semiconductor nanocrystals |
| 01/15/2015 | US20150014624 Nanodevice and method for fabricating the same |
| 01/15/2015 | DE112013002106T5 Halbleitervorrichtung und Verfahren zum Herstellen desselben Of the same semiconductor device and method of manufacturing |
| 01/15/2015 | DE112013001236T5 Isolierschicht für eine elektronische Vorrichtung und Verfahren zur Herstellung einer Isolierschicht für eine elektronische Vorrichtung Insulating layer for an electronic device and method for producing an insulating layer for an electronic device |
| 01/15/2015 | DE102014212483A1 Komplexes Schaltungselement und Kondensator mit CMOS-kompatiblen antiferroelektrischen High-k-Materialien Complex circuit element and condenser with CMOS-compatible antiferroelectric high-k materials |
| 01/15/2015 | DE102014211905A1 Halbleitervorrichtung Semiconductor device |
| 01/15/2015 | DE102014109771A1 Mehrchipvorrichtung Multi-chip device |
| 01/15/2015 | DE102014109715A1 Oberflächenpassivierung eines Substrats durch mechanisches Beschädigen der Oberflächenschicht Surface passivation of a substrate by mechanical damage of the surface layer |
| 01/15/2015 | DE102014109665A1 Halbleitervorrichtung mit vergrabener Gateelektrode und Gatekontakten A semiconductor device with a buried gate electrode and gate contacts |
| 01/15/2015 | DE102014109662A1 Halbleiterchip und Gehäuse mit Source-Down- und Sensorkonfiguration Semiconductor chip and package with source-down and sensor configuration |
| 01/15/2015 | DE102014109643A1 Bipolartransistor und verfahren zum herstellen eines bipolartransistors Bipolar transistor and method for producing a bipolar transistor |
| 01/15/2015 | DE102014109475A1 Elektronische schaltung mit einem rückwärts leitenden igbt und einer gate-ansteuerschaltung An electronic circuit with a reverse-conducting IGBT and a gate drive circuit |
| 01/15/2015 | DE102005030658B4 Halbleitervorrichtung mit einer verbesserten spannungsgesteuerten Oszillatorschaltung A semiconductor device with an improved voltage controlled oscillator circuit |
| 01/14/2015 | EP2824711A2 Vertical transistors having p-type gallium nitride current barrier layers and methods of fabricating the same |
| 01/14/2015 | EP2824710A2 Semiconductor device with an electric field modification structure, and corresponding integrated circuit, fabrication method and method of increasing breakdown voltage |
| 01/14/2015 | EP2824708A1 Non volatile memory cell, method for programming, erasing and reading such a cell and non volatile memory device |
| 01/14/2015 | EP2824695A1 Pattern forming method |
| 01/14/2015 | EP2824694A1 Pattern forming method |
| 01/14/2015 | EP2824223A1 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device |
| 01/14/2015 | EP2823512A1 Magnetic logic units configured to measure magnetic field direction |
| 01/14/2015 | EP2823511A1 Schottky contact |
| 01/14/2015 | EP2823509A1 Electrostatic discharge protection circuit having buffer stage fet with thicker gate oxide than common-source fet |
| 01/14/2015 | EP2823358A1 Method for removing a high definition nanostructure, a partly freestanding layer, a sensor comprising said layer and a method using said sensor |
| 01/14/2015 | EP2823083A1 Methods for making silicon containing films on thin film transistor devices |
| 01/14/2015 | CN204102911U 一种低漏电低正向压降肖特基二极管结构 A low leakage Low forward voltage drop Schottky diode structure |
| 01/14/2015 | CN204102910U 一种肖特基二极管 One kind of Schottky diodes |
| 01/14/2015 | CN204102909U 一种整流二极管器件 One kind of rectifier diode device |
| 01/14/2015 | CN204102908U 一种带三角槽的soi-ldmos高压功率器件 Soi-ldmos a high-voltage power devices with a triangular groove |
| 01/14/2015 | CN204102907U 具有低特征导通电阻的功率mosfet器件 Features a low on-resistance power mosfet devices |
| 01/14/2015 | CN204102906U 一种双多晶硅功率mos管 A dual polysilicon power mos tube |
| 01/14/2015 | CN204102905U 一种rf-ldmos漏端场板结构 One kind of rf-ldmos drain field plate structure |
| 01/14/2015 | CN204102904U 半导体装置 Semiconductor device |
| 01/14/2015 | CN104285302A 半导体装置 Semiconductor device |
| 01/14/2015 | CN104285301A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104285300A 半导体装置 Semiconductor device |
| 01/14/2015 | CN104285299A 碳化硅半导体器件 Silicon carbide semiconductor device |
| 01/14/2015 | CN104285298A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device |
| 01/14/2015 | CN104285291A 存储设备和存储器件 Storage devices and memory devices |
| 01/14/2015 | CN104285286A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104285285A 半导体装置的制造方法 The method of manufacturing a semiconductor device |
| 01/14/2015 | CN104285282A 等离子体蚀刻方法 The plasma etching method |
| 01/14/2015 | CN104285260A 具有表面官能化金属纳米线的透明导电电极、它们的结构设计及制造方法 , Their structural design and manufacturing method of a transparent conductive electrode surface functionalized metal nanowires |
| 01/14/2015 | CN104284997A 在薄膜晶体管器件上制备含硅膜的方法 The method of preparing a silicon-containing film on a thin film transistor device |
| 01/14/2015 | CN104283533A 半导体装置 Semiconductor device |
| 01/14/2015 | CN104282770A 具有整体深沟槽电容器的硅控整流器 Silicon controlled rectifier has a whole deep trench capacitor |
| 01/14/2015 | CN104282769A 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置 Thin film transistor and method of preparation, and preparation methods array substrate, a display device |
| 01/14/2015 | CN104282768A 薄膜晶体管的制作方法 The method of making a thin film transistor |
| 01/14/2015 | CN104282767A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof |
| 01/14/2015 | CN104282766A 一种新型碳化硅mosfet及其制造方法 A novel method of manufacturing the silicon carbide mosfet |
| 01/14/2015 | CN104282765A 一种新型碳化硅mos器件及其制造方法 A novel device and a manufacturing method for silicon carbide mos |
| 01/14/2015 | CN104282764A 具有坡形栅极的4H-SiC金属半导体场效应晶体管及制作方法 4H-SiC metal semiconductor field effect transistor and method of making the gate with a sloping |
| 01/14/2015 | CN104282763A 射频横向双扩散场效应晶体管及其制作方法 RF lateral double diffused field effect transistor and its manufacturing method |
| 01/14/2015 | CN104282762A 射频横向双扩散场效应晶体管及其制作方法 RF lateral double diffused field effect transistor and its manufacturing method |
| 01/14/2015 | CN104282761A 垂直沟道存储器及其制造方法与应用其的操作方法 A vertical channel memory and a manufacturing method thereof and application method of operation |
| 01/14/2015 | CN104282760A 半导体器件 Semiconductor devices |
| 01/14/2015 | CN104282759A 超结mosfet及其制造方法和复合半导体装置 Mosfet and method for manufacturing super-junction and compound semiconductor devices |
| 01/14/2015 | CN104282758A 具有增加的沟道外围的金属氧化物半导体(mos)器件及制造的方法 Peripheral channel metal oxide semiconductor has increased (mos) of the device and method of manufacturing |
| 01/14/2015 | CN104282757A 半导体器件 Semiconductor devices |
| 01/14/2015 | CN104282756A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104282755A 半导体器件 Semiconductor devices |
| 01/14/2015 | CN104282754A 高性能高集成度l形栅控肖特基势垒隧穿晶体管 L-shaped high performance and high integration density gated Schottky barrier tunneling transistor |
| 01/14/2015 | CN104282753A 高集成度日形源漏栅辅控u形沟道高迁移率无结晶体管 Highly integrated live form the source and drain-gate auxiliary control u-shaped channel high-mobility transistor knotless |
| 01/14/2015 | CN104282752A 高性能高集成度漏电极辅控l形栅型无结晶体管 High-performance highly integrated auxiliary control l-shaped drain-gate transistor knotless |
| 01/14/2015 | CN104282751A 高集成度高迁移率源漏栅辅控型无结晶体管 High mobility of highly integrated source-drain-gate-controlled no auxiliary junction transistor |
| 01/14/2015 | CN104282750A 主辅栅分立控制u形沟道无掺杂场效应晶体管 Primary and secondary grid of discrete control u-shaped channel field effect transistor undoped |
| 01/14/2015 | CN104282749A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method |
| 01/14/2015 | CN104282748A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/14/2015 | CN104282747A 抑制谐波效应半导体结构及形成抑制谐波效应结构的方法 Harmonic suppression effect semiconductor structure and method of harmonic suppression effect of structure formation |
| 01/14/2015 | CN104282746A 具有p型氮化镓电流势垒层的垂直型晶体管及其制造方法 Having a vertical-type transistor and its current method of manufacturing a p-type gallium nitride barrier layer |
| 01/14/2015 | CN104282745A 半导体器件以及改善半导体器件的击穿电压的方法 A semiconductor device and a method of improving the breakdown voltage of the semiconductor device |
| 01/14/2015 | CN104282744A 一种igbt器件结构 One kind of device structure igbt |
| 01/14/2015 | CN104282743A 半导体装置 Semiconductor device |