| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/21/2015 | CN104299988A 一种具有平面型发射阴极的纳米真空三极管及其制作方法 A planar nano-emission cathode triode vacuum and its production method |
| 01/21/2015 | CN104299987A 具有掩埋栅极电极和栅极接触的半导体器件 Having a buried gate electrode and a gate contact of a semiconductor device |
| 01/21/2015 | CN104299986A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/21/2015 | CN104299985A 半导体装置 Semiconductor device |
| 01/21/2015 | CN104299984A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof |
| 01/21/2015 | CN104299983A 电致发光器件及其制造方法、显示基板和显示装置 Electroluminescent device and a manufacturing method, the display substrate and a display device |
| 01/21/2015 | CN104299971A 具有不均匀p型杂质分布的mos器件 Having a non-uniform distribution of the p-type impurity mos device |
| 01/21/2015 | CN104299970A 具有减少的面的外延区的mos器件 Mos device having a reduced surface area of the epitaxial |
| 01/21/2015 | CN104299966A 静电放电保护结构 ESD protection structures |
| 01/21/2015 | CN104299965A 静电防护装置 ESD protection device |
| 01/21/2015 | CN104299963A 一种mos静电保护结构及保护方法 One kind mos electrostatic protection structure and protection methods |
| 01/21/2015 | CN104299913A 薄膜晶体管的制造方法 The method of manufacturing a thin film transistor |
| 01/21/2015 | CN104299912A 在先进多栅极装置中的高度共形延伸掺杂 In more highly advanced gate means extending doped conformal |
| 01/21/2015 | CN104299910A 由杂质离子植入调整的通道半导体合金层成长 By adjustment of the channel ion implantation impurity semiconductor alloy layer is grown |
| 01/21/2015 | CN104299909A 热调整半导体器件中的应力 Adjust heat stress in semiconductor devices |
| 01/21/2015 | CN104299908A Vdmos及其制造方法 Vdmos and manufacturing method thereof |
| 01/21/2015 | CN104299906A 一种掩埋式势垒分压场效应管及其生产方法 One kind of buried barrier divider FET and its production method |
| 01/21/2015 | CN104299905A 无结晶体管及其制造方法 No junction transistor and manufacturing method thereof |
| 01/21/2015 | CN104299902A 电容值可变的mis电容的结构及制作方法 Structure and method of making the capacitance value of variable capacitance mis |
| 01/21/2015 | CN104299897A 具改善阈值电压表现的取代金属栅极的集成电路及其制法 Replace with improving the performance of the threshold voltage metal gate IC Jiqizhifa |
| 01/21/2015 | CN104299893A 通过执行替代生长制程形成finfet半导体装置的替代鳍片的方法 Finfet alternative method of forming a fin of a semiconductor device by performing alternative routing Growth |
| 01/21/2015 | CN102856367B 随机噪声源 Random noise source |
| 01/21/2015 | CN102800592B 晶体管及其形成方法 Transistor and method of forming |
| 01/21/2015 | CN102779849B 半导体器件和用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device |
| 01/21/2015 | CN102684485B 垂直互补场效应管 Vertical complementary FET |
| 01/21/2015 | CN102683209B 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof |
| 01/21/2015 | CN102667597B 有源矩阵基板和显示装置 Active matrix substrate and a display device |
| 01/21/2015 | CN102655166B 一种用于功率器件击穿保护的栅漏箝位和静电放电保护电路 A power device gate-drain breakdown protection clamp and electrostatic discharge protection circuit |
| 01/21/2015 | CN102646717B 阵列基板和其制造方法以及显示装置 Array substrate and its manufacturing method, and a display device |
| 01/21/2015 | CN102549759B 具有分级掺杂区的垂直结型场效应晶体管和二极管及其制造方法 The vertical junction field effect transistor and a diode and a manufacturing method having graded doped region |
| 01/21/2015 | CN102315217B 多指条形ggnmos、静电保护电路 Multi-finger bar ggnmos, electrostatic protection circuit |
| 01/21/2015 | CN102088034B 半导体装置 Semiconductor device |
| 01/21/2015 | CN101910431B 高纯度镧、包含高纯度镧的溅射靶以及以高纯度镧为主成分的金属栅膜 High-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a high-purity lanthanum metal gate film mainly composed of |
| 01/20/2015 | US8937834 Method of maintaining the state of semiconductor memory having electrically floating body transistor |
| 01/20/2015 | US8937692 Color mixing lens with light receiving portion, color mixing portion, and light emission portion, and liquid crystal display device having the same |
| 01/20/2015 | US8937691 TFT-LCD array substrate, manufacturing method of the same and TFT-LCD |
| 01/20/2015 | US8937505 Integrated circuit comprising a clock tree cell |
| 01/20/2015 | US8937502 Lateral insulated gate turn-off devices |
| 01/20/2015 | US8937368 Semiconductor device |
| 01/20/2015 | US8937367 Semiconductor memory device |
| 01/20/2015 | US8937366 Selective epitaxial overgrowth comprising air gaps |
| 01/20/2015 | US8937364 Multi-gate high voltage device |
| 01/20/2015 | US8937359 Contact formation for ultra-scaled devices |
| 01/20/2015 | US8937354 PD SOI device with a body contact structure |
| 01/20/2015 | US8937353 Dual epitaxial process for a finFET device |
| 01/20/2015 | US8937352 High voltage metal-oxide-semiconductor transistor device and layout pattern thereof |
| 01/20/2015 | US8937351 Power MOS transistor with improved metal contact |
| 01/20/2015 | US8937350 Semiconductor device and method of manufacturing the same |
| 01/20/2015 | US8937349 Semiconductor component and manufacturing method thereof |
| 01/20/2015 | US8937348 3-D nonvolatile memory device, memory system, and manufacturing method thereof |
| 01/20/2015 | US8937347 Non-volatile memory |
| 01/20/2015 | US8937346 Semiconductor device |
| 01/20/2015 | US8937343 Semiconductor device including transistor and method of manufacturing the same |
| 01/20/2015 | US8937341 Two-phase charge-coupled device |
| 01/20/2015 | US8937340 Silicon on insulator and thin film transistor bandgap engineered split gate memory |
| 01/20/2015 | US8937339 Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer |
| 01/20/2015 | US8937338 Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer |
| 01/20/2015 | US8937337 Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier |
| 01/20/2015 | US8937336 Passivation of group III-nitride heterojunction devices |
| 01/20/2015 | US8937335 Gallium nitride devices with aluminum nitride intermediate layer |
| 01/20/2015 | US8937334 Triggerable bidirectional semiconductor device |
| 01/20/2015 | US8937323 LED array capable of reducing uneven brightness distribution |
| 01/20/2015 | US8937319 Schottky barrier diode |
| 01/20/2015 | US8937317 Method and system for co-packaging gallium nitride electronics |
| 01/20/2015 | US8937316 Light-emitting device and electronic apparatus having a power line with a notch portion |
| 01/20/2015 | US8937315 Organic light emitting diode display and manufacturing method thereof |
| 01/20/2015 | US8937313 Semiconductor device and method of manufacturing the same |
| 01/20/2015 | US8937312 Organic light-emitting display apparatus |
| 01/20/2015 | US8937311 Thin film transistor, thin film transistor array substrate and method of fabricating the same |
| 01/20/2015 | US8937309 Semiconductor die assemblies, semiconductor devices including same, and methods of fabrication |
| 01/20/2015 | US8937308 Oxide semiconductor thin film transistor |
| 01/20/2015 | US8937306 Oxide semiconductor |
| 01/20/2015 | US8937305 Semiconductor device |
| 01/20/2015 | US8937302 Organic light-emitting diode |
| 01/20/2015 | US8937301 Photocurable polymeric dielectrics containing 6-substituted coumarin moieties and methods of preparation and use thereof |
| 01/20/2015 | US8937300 Triarylamine compounds for use in organic light-emitting diodes |
| 01/20/2015 | US8937299 III-V finFETs on silicon substrate |
| 01/20/2015 | US8937298 Structure and method for forming integral nitride light sensors on silicon substrates |
| 01/20/2015 | US8937295 Nanowire sized opto-electronic structure and method for manufacturing the same |
| 01/20/2015 | US8937294 Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same |
| 01/20/2015 | US8937293 Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements |
| 01/20/2015 | US8937291 Three-dimensional array structure for memory devices |
| 01/20/2015 | US8937290 Memory cells |
| 01/20/2015 | US8937022 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus |
| 01/20/2015 | US8937020 Sputtering target and manufacturing method thereof, and transistor |
| 01/20/2015 | US8937012 Production method for semiconductor device |
| 01/20/2015 | US8937005 Reducing or eliminating pre-amorphization in transistor manufacture |
| 01/20/2015 | US8937002 Nitride electronic device and method for manufacturing the same |
| 01/20/2015 | US8936999 Manufacturing method of SOI substrate |
| 01/20/2015 | US8936996 Structure and method for topography free SOI integration |
| 01/20/2015 | US8936992 Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate |
| 01/20/2015 | US8936990 Manufacturing method of power transistor device with super junction |
| 01/20/2015 | US8936989 Method for manufacturing semiconductor devices using self-aligned process to increase device packing density |
| 01/20/2015 | US8936988 Methods for manufacturing a MOSFET using a stress liner of diamond-like carbon on the substrate |
| 01/20/2015 | US8936987 PMOS transistors and fabrication methods thereof |
| 01/20/2015 | US8936986 Methods of forming finfet devices with a shared gate structure |
| 01/20/2015 | US8936985 Methods related to power semiconductor devices with thick bottom oxide layers |
| 01/20/2015 | US8936982 Semiconductor device with buried bit line and method for fabricating the same |
| 01/20/2015 | US8936981 Method for fabricating semiconductor device with mini SONOS cell |
| 01/20/2015 | US8936980 Dual gate lateral double-diffused MOSFET (LDMOS) transistor |