| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/22/2015 | US20150021664 Lateral/Vertical Semiconductor Device with Embedded Isolator |
| 01/22/2015 | US20150021663 Finfet with insulator under channel |
| 01/22/2015 | US20150021662 Iii-v semiconductor device having self-aligned contacts |
| 01/22/2015 | US20150021661 Transistor having high breakdown voltage and method of making the same |
| 01/22/2015 | US20150021660 Transistor having a back-barrier layer and method of making the same |
| 01/22/2015 | US20150021659 Programmable scr for esd protection |
| 01/22/2015 | US20150021658 Semiconductor device and method for fabricating the same |
| 01/22/2015 | US20150021657 Semiconductor device |
| 01/22/2015 | US20150021656 Semiconductor device |
| 01/22/2015 | US20150021655 Semiconductor device |
| 01/22/2015 | US20150021654 Tunneling transistor with asymmetric gate |
| 01/22/2015 | US20150021646 Light emitting device package including a substrate having at least two recessed surfaces |
| 01/22/2015 | US20150021625 Semiconductor fin isolation by a well trapping fin portion |
| 01/22/2015 | US20150021624 Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates |
| 01/22/2015 | US20150021623 Enhanced gate dielectric for a field effect device with a trenched gate |
| 01/22/2015 | US20150021621 Self-aligned gate buried channel field effect transistor |
| 01/22/2015 | US20150021619 III-Nitride Semiconductor Device with Reduced Electric Field Between Gate and Drain |
| 01/22/2015 | US20150021618 Semiconductor device |
| 01/22/2015 | US20150021617 Semiconductor device |
| 01/22/2015 | US20150021616 Nitride-based semiconductor devices |
| 01/22/2015 | US20150021615 Junction barrier schottky diode and manufacturing method thereof |
| 01/22/2015 | US20150021614 Controlled on and off time scheme for monolithic cascoded power transistors |
| 01/22/2015 | US20150021612 Array substrate, display device and manufacturing method of array substrate |
| 01/22/2015 | US20150021610 Semiconductor structures with deep trench capacitor and methods of manufacture |
| 01/22/2015 | US20150021609 Semiconductor apparatus with multiple tiers, and methods |
| 01/22/2015 | US20150021608 Array substrate and method for manufacturing the same |
| 01/22/2015 | US20150021607 Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same |
| 01/22/2015 | US20150021603 Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element |
| 01/22/2015 | US20150021602 Thin film transistor display panel and manufacturing method thereof |
| 01/22/2015 | US20150021601 Semiconductor device and electronic device |
| 01/22/2015 | US20150021599 Barrier materials for display devices |
| 01/22/2015 | US20150021597 Photopatternable Materials and Related Electronic Devices and Methods |
| 01/22/2015 | US20150021596 Semiconductor Device |
| 01/22/2015 | US20150021593 Oxide semiconductor film, method for forming oxide semiconductor film, and semiconductor device |
| 01/22/2015 | US20150021591 Thin film transistor and thin film transistor array panel including the same |
| 01/22/2015 | US20150021572 Thin film transistor, method of manufacturing the same, and electronic apparatus |
| 01/22/2015 | US20150021561 Thin film transistor array substrate and organic light emitting display apparatus including the same |
| 01/22/2015 | US20150021554 Direct formation of graphene on semiconductor substrates |
| 01/22/2015 | US20150021553 Junctionless accumulation-mode device isolated from semiconductive substrate by reverse-bias junction |
| 01/22/2015 | US20150021552 Iii-nitride transistor including a p-type depleting layer |
| 01/22/2015 | US20150021551 Methods for coating semiconductor nanocrystals |
| 01/22/2015 | DE112013002407T5 Halbleitervorrichtung Semiconductor device |
| 01/22/2015 | DE112013002390T5 Harzgekapselte Halbleitervorrichtung und Verfahren zu ihrer Herstellung Resin-encapsulated semiconductor device and process for their preparation |
| 01/22/2015 | DE112013002352T5 Halbleitervorrichtung Semiconductor device |
| 01/22/2015 | DE112013001297T5 Leistungshalbleiterbauelement und Verfahren, dieses herzustellen A power semiconductor device and method of manufacturing this |
| 01/22/2015 | DE112008003787B4 Halbleitervorrichtung Semiconductor device |
| 01/22/2015 | DE102014211026A1 Verfahren zum Bilden von Austauschfins für eine FinFET-Halbleitervorrichtung unter Durchführung eines Austauschaufwachsprozesses A method of forming Austauschfins for a FinFET semiconductor device by performing a Austauschaufwachsprozesses |
| 01/22/2015 | DE102014110006A1 Ladungskompensations-Halbleitervorrichtungen Charge compensation semiconductor devices |
| 01/22/2015 | DE102012218580B4 Kohlenstoffimplantation zur Anpassung der Austrittsarbeit bei einem Ersatzgate-Transistor Carbon implantation to adapt the work function for a replacement gate transistor |
| 01/22/2015 | DE102005060702B4 Vertikaler MOS-Transistor mit geringem Einschaltwiderstand Vertical MOS transistor with a low turn-on resistance |
| 01/22/2015 | DE102005039131B4 Halbleiterbauteil und Siliciumcarbid-Halbleiterbauteil Semiconductor device and the silicon carbide semiconductor device |
| 01/21/2015 | EP2827374A1 Modular approach for reducing flicker noise of MOSFETs |
| 01/21/2015 | EP2827373A2 Protection device and related fabrication methods |
| 01/21/2015 | EP2826069A1 Sensor arrangement comprising a carrier substrate and a ferroelectric layer and method for producing and using the sensor arrangement |
| 01/21/2015 | EP2826035A1 Memory and logic device and methods for performing thereof |
| 01/21/2015 | CN204118078U 一种GaN基异质结肖特基二极管器件 One kind of GaN-based heterostructure Schottky diode device |
| 01/21/2015 | CN204118077U 一种用于开关电源的新型快恢复二极管 A new switching power fast recovery diode |
| 01/21/2015 | CN204118076U 一种具有异质埋层的rf ldmos器件 Rf ldmos device having a buried heterostructure layers |
| 01/21/2015 | CN204118075U 半导体结构 Semiconductor structure |
| 01/21/2015 | CN204118074U 一种电流控制装置 A current control device |
| 01/21/2015 | CN204118073U 高频非穿通型绝缘栅双极型晶体管 High frequency of non-punch-through insulated gate bipolar transistor |
| 01/21/2015 | CN204118072U 电子器件 Electronic devices |
| 01/21/2015 | CN204118070U 高压无阻达林顿功率晶体管 High pressure unimpeded Darlington power transistors |
| 01/21/2015 | CN104303315A 包括能独立控制的吸收区电场和倍增区电场的器件 Device comprising an electric field absorption region and the multiplication region can be independently controlled electric field |
| 01/21/2015 | CN104303314A 具有结终端扩展的半导体器件 Having a junction termination extension of the semiconductor device |
| 01/21/2015 | CN104303313A 纳米器件及其制作方法 Nano-devices and manufacturing method thereof |
| 01/21/2015 | CN104303312A 立式耐高压半导体装置及其制造方法 Vertical high-voltage semiconductor device and manufacturing method |
| 01/21/2015 | CN104303311A 纵型高耐压半导体装置及纵型高耐压半导体装置的制造方法 The method of manufacturing a vertical high-voltage semiconductor device and a vertical high-voltage semiconductor device |
| 01/21/2015 | CN104303310A 可缩放门逻辑非易失性存储器单元及阵列 Scalable gate non- volatile memory cells and a logic array |
| 01/21/2015 | CN104303309A 使用与串联连接的p型mos器件并联的串联连接的n型mos器件的双向开关 Used in tandem with a series connection of a p-type devices in parallel mos mos n-type bidirectional switching devices connected |
| 01/21/2015 | CN104303308A 包含纳米-轨道电极的非易失性存储单元 Comprising nano - Track electrode nonvolatile memory cell |
| 01/21/2015 | CN104303307A 半导体装置 Semiconductor device |
| 01/21/2015 | CN104303285A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device |
| 01/21/2015 | CN104303276A 防止相邻器件的短路 Prevent shorting between adjacent devices |
| 01/21/2015 | CN104303269A 碳化硅半导体装置的制造方法 The method of manufacturing a silicon carbide semiconductor device |
| 01/21/2015 | CN104303221A 有源矩阵基板的制造方法和显示装置的制造方法 A manufacturing method of an active matrix substrate and a display device |
| 01/21/2015 | CN104302816A 具有可调节属性的纳米线的高吞吐量连续气相合成 High throughput continuous gas phase synthesis with an adjustable attributes nanowires |
| 01/21/2015 | CN104300963A 用于减少mosfet闪烁噪声的模块化方法 Reduce flicker noise mosfet modular approach for |
| 01/21/2015 | CN104300010A 常态导通高压开关 Normal conducting high-voltage switchgear |
| 01/21/2015 | CN104300009A 一种薄膜晶体管及其制备方法、电路结构、电子设备 A thin film transistor and its preparation method, the circuit structure, electronic equipment |
| 01/21/2015 | CN104300008A 一种电极结构、薄膜晶体管、阵列基板及显示面板 An electrode structure, a thin film transistor array substrate and a display panel |
| 01/21/2015 | CN104300007A 薄膜晶体管及其制作方法、阵列基板、显示装置 Thin film transistor and its manufacturing method, the array substrate, display device |
| 01/21/2015 | CN104300006A 薄膜晶体管及其制造方法、oled背板和显示装置 A thin film transistor and its manufacturing method, oled backplane and display means |
| 01/21/2015 | CN104300005A 薄膜晶体管、阵列基板和显示装置 Thin film transistor array substrate and a display device |
| 01/21/2015 | CN104300004A 薄膜晶体管及其制备方法、阵列基板、显示装置 Thin film transistor and its preparation method, the array substrate, display device |
| 01/21/2015 | CN104300003A 薄膜晶体管及其制造方法以及电子设备 A thin film transistor and its manufacturing method, and electronic device |
| 01/21/2015 | CN104300002A 一种薄膜晶体管及其制造方法、光刻工艺 A thin film transistor and its manufacturing method, a lithographic process |
| 01/21/2015 | CN104300001A 一种mosfet芯片布局结构 One kind of chip layout structure mosfet |
| 01/21/2015 | CN104300000A 具有静电保护结构的功率器件及其制作方法 Has the power device and manufacturing method thereof static protection structures |
| 01/21/2015 | CN104299999A 一种具有复合栅介质层的氮化镓基异质结场效应晶体管 GaN-based heterojunction field effect transistor having a gate dielectric layer composite |
| 01/21/2015 | CN104299998A 一种ldmos器件及其制作方法 Ldmos one kind of device and manufacturing method thereof |
| 01/21/2015 | CN104299997A 电荷补偿半导体器件 Charge compensation semiconductor devices |
| 01/21/2015 | CN104299996A 非对称替代金属栅场效应晶体管及其制造方法 Asymmetric replacement metal gate field effect transistor and manufacturing method thereof |
| 01/21/2015 | CN104299995A 半导体装置 Semiconductor device |
| 01/21/2015 | CN104299994A 晶体管及晶体管的形成方法 The method for forming transistors and transistor |
| 01/21/2015 | CN104299993A 高压场效应晶体管器件 High-voltage field effect transistor device |
| 01/21/2015 | CN104299992A 一种横向沟槽绝缘栅双极型晶体管及其制备方法 A widthwise trench insulated gate bipolar transistor and its preparation method |
| 01/21/2015 | CN104299991A 半导体装置 Semiconductor device |
| 01/21/2015 | CN104299990A 绝缘栅双极晶体管及其制造方法 Insulated gate bipolar transistor and its manufacturing method |
| 01/21/2015 | CN104299989A 绝缘栅双极型晶体管及其制造方法 Insulated gate bipolar transistor and its manufacturing method |