Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2015
01/27/2015CA2458134C Nitride semiconductor device
01/25/2015CA2856490A1 Semiconductor assembly and method of manufacture
01/22/2015WO2015010089A1 Integration of silicon impatt diode in analog technology
01/22/2015WO2015009791A1 Integrated circuit and method of forming the integrated circuit
01/22/2015WO2015009669A1 Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
01/22/2015WO2015009576A1 Hemt device and method
01/22/2015WO2015009514A1 Iii-nitride transistor including a p-type depleting layer
01/22/2015WO2015009348A1 Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devices
01/22/2015WO2015009249A1 Enhancement-mode iii-n transistor with n-polarity and method of fabricating the same
01/22/2015WO2015008810A1 Organic film transistor, organic semiconductor film, and organic semiconductor material and use applications thereof
01/22/2015WO2015008805A1 Oxide semiconductor thin film and thin film transistor
01/22/2015WO2015008753A1 Organic film transistor, organic semiconductor film, organic semiconductor material and application of these
01/22/2015WO2015008727A1 Thermoelectric conversion element and composition for forming thermoelectric conversion layer
01/22/2015WO2015008720A1 Film-forming composition, film formed thereby, and method for manufacturing organic semiconductor element using same
01/22/2015WO2015008719A1 Composition for forming films, film produced from said composition, and method for producing organic semiconductor element using said composition
01/22/2015WO2015008630A1 Radiographic imaging device and radiographic imaging/display system
01/22/2015WO2015008550A1 Semiconductor device, and method for manufacturing same
01/22/2015WO2015008548A1 Method for manufacturing semiconductor device
01/22/2015WO2015008532A1 Field-effect transistor
01/22/2015WO2015008473A1 Semiconductor device
01/22/2015WO2015008458A1 Semiconductor device
01/22/2015WO2015008444A1 Semiconductor device
01/22/2015WO2015008430A1 Semiconductor device
01/22/2015WO2015008422A1 Sensor
01/22/2015WO2015008387A1 Method for manufacturing semiconductor device, and semiconductor device
01/22/2015WO2015008385A1 Power module
01/22/2015WO2015008342A1 Lithium ion secondary battery and battery control system
01/22/2015WO2015008336A1 Semiconductor device and method for manufacturing same
01/22/2015WO2015007947A1 An environmental sensor and a method for determining relative vapour pressure
01/22/2015WO2015007055A1 Method and system for preparing thin-film transistor and thin-film transistor, and array substrate
01/22/2015US20150024581 Method for manufacturing a semiconductor device
01/22/2015US20150024570 Scaling of bipolar transistors
01/22/2015US20150024569 Integrated circuits and methods of forming integrated circuits
01/22/2015US20150024568 Spacer replacement for replacement metal gate semiconductor devices
01/22/2015US20150024567 Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions
01/22/2015US20150024566 Finlike Structures and Methods of Making Same
01/22/2015US20150024565 Method of forming semiconductor device having embedded strain-inducing pattern
01/22/2015US20150024563 Semiconductor device, method of manufacturing the semiconductor device, and electronic device
01/22/2015US20150024562 Method of forming semiconductor structure
01/22/2015US20150024561 Method for fabricating a finfet in a large scale integrated circuit
01/22/2015US20150024560 Gate encapsulation achieved by single-step deposition
01/22/2015US20150024559 System and method for integrated circuits with cylindrical gate structures
01/22/2015US20150024558 Asymmetrical replacement metal gate field effect transistor
01/22/2015US20150024557 Semiconductor device having local buried oxide
01/22/2015US20150024556 Method for manufacturing semiconductor device
01/22/2015US20150024544 Method for manufacturing semiconductor device
01/22/2015US20150024530 Method of manufacturing an oxide semiconductor device and method of manufacturing a display device having the same
01/22/2015US20150024520 Semiconductor device manufacturing method and manufacturing device
01/22/2015US20150023082 Semiconductor device and power conversion device using the same
01/22/2015US20150021776 Polysilicon layer
01/22/2015US20150021747 Diode
01/22/2015US20150021746 Backscattering for localized annealing
01/22/2015US20150021742 Methods of Forming Junction Termination Extension Edge Terminations for High Power Semiconductor Devices and Related Semiconductor Devices
01/22/2015US20150021741 Bonded Semiconductor Structures
01/22/2015US20150021740 Integration of the silicon impatt diode in an analog technology
01/22/2015US20150021739 Protection device and related fabrication methods
01/22/2015US20150021738 Bipolar junction transistors with an air gap in the shallow trench isolation
01/22/2015US20150021735 Semiconductor device and method of manufacturing the same
01/22/2015US20150021734 Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device
01/22/2015US20150021733 Semiconductor wafer, semiconductor ic chip and manufacturing method of the same
01/22/2015US20150021722 MEMS Device
01/22/2015US20150021715 Low Temperature Salicide for Replacement Gate Nanowires
01/22/2015US20150021714 Integrated circuits having a metal gate structure and methods for fabricating the same
01/22/2015US20150021713 Guard ring structure of semiconductor arrangement
01/22/2015US20150021712 Highly conformal extension doping in advanced multi-gate devices
01/22/2015US20150021711 Semiconductor device
01/22/2015US20150021709 Structures and methods integrating different fin device architectures
01/22/2015US20150021707 Electromagnetic shield and associated methods
01/22/2015US20150021706 Integrated circuit and method of forming the integrated circuit with improved logic transistor performance and sram transistor yield
01/22/2015US20150021705 Method of fabricating dual high-k metal gates for mos devices
01/22/2015US20150021704 Finfet work function metal formation
01/22/2015US20150021703 Gate oxide quality for complex mosfet devices
01/22/2015US20150021702 Shallow trench isolation
01/22/2015US20150021700 Shallow trench isolation structure and method of forming the same
01/22/2015US20150021697 Thermally Tuning Strain in Semiconductor Devices
01/22/2015US20150021695 Epitaxial block layer for a fin field effect transistor device
01/22/2015US20150021693 Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer
01/22/2015US20150021692 Method of localized modification of the stresses in a substrate of the soi type, in particular fd soi type, and corresponding device
01/22/2015US20150021691 Finfet with electrically isolated active region on bulk semiconductor substrate and method of fabricating same
01/22/2015US20150021689 Asymmetrical replacement metal gate field effect transistor
01/22/2015US20150021688 MOS Devices with Non-Uniform P-type Impurity Profile
01/22/2015US20150021687 Semiconductor structure and method of forming the semiconductor structure with deep trench isolation structures
01/22/2015US20150021686 Device Structure and Methods of Forming Superjunction Lateral Power MOSFET with Surrounding LDD
01/22/2015US20150021685 Semiconductor device and manufacturing method of the same
01/22/2015US20150021684 Semiconductor device having buried channel array and method of manufacturing the same
01/22/2015US20150021683 Methods of forming semiconductor device with self-aligned contact elements and the resulting devices
01/22/2015US20150021682 Normally on high voltage switch
01/22/2015US20150021681 Semiconductor device having metal gate and manufacturing method thereof
01/22/2015US20150021680 Field effect transistor incorporating a schottky diode
01/22/2015US20150021679 Architecture to Improve Cell Size for Compact Array of Split Gate Flash Cell with Buried Common Source Structure
01/22/2015US20150021678 Nonvolatile semiconductor memory device and method of manufacturing the same
01/22/2015US20150021677 Embedded Transistor
01/22/2015US20150021673 Semiconductor device and manufacturing method thereof
01/22/2015US20150021672 Contact for high-k metal gate device
01/22/2015US20150021671 Field-effect transistor and method of manufacturing thereof
01/22/2015US20150021670 Charge Compensation Semiconductor Devices
01/22/2015US20150021669 Semiconductor device and manufacturing method thereof
01/22/2015US20150021667 High Electron Mobility Transistor and Method of Forming the Same
01/22/2015US20150021666 Transistor having partially or wholly replaced substrate and method of making the same
01/22/2015US20150021665 Transistor having back-barrier layer and method of making the same
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