| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 01/29/2015 | DE102014110450A1 Integrierte Schaltung und Verfahren zum Herstellen einer integrierten Schaltung Integrated circuit and method for fabricating an integrated circuit |
| 01/29/2015 | DE102014110442A1 Halbleitervorrichtung mit einer Steuerschaltung A semiconductor device with a control circuit |
| 01/29/2015 | DE102014110366A1 Mos-leistungstransistor mit integriertem gatewiderstand MOS power transistor with integrated gate resistor |
| 01/29/2015 | DE102014110316A1 Halbleitervorrichtung, Halbleiterwaferstruktur und Verfahren zur Bildung einer Halbleiterwaferstruktur A semiconductor device, semiconductor wafer structure and method of forming a semiconductor wafer structure |
| 01/29/2015 | DE102014109940A1 Verfahren für MEMS-Kappen-Arbeitsablauf für vielgestaltige Topographie Method for MEMS caps workflow for diverse topography |
| 01/29/2015 | DE102007011837B4 Integrierter Schaltkreis mit modifizierbarem Gate-Stapel-Speicherelement, Verwendung des integrierten Schaltkreises, Verfahren zum Herstellen eines integrierten Schaltkreises, sowie Speichermodul, System und hybrides Massenspeichersystem An integrated circuit comprising modifiable gate stack memory element, use of the integrated circuit, method for manufacturing an integrated circuit, as well as memory module, system, and hybrid storage system |
| 01/28/2015 | EP2830097A1 Bipolar transistor having self-adjusted emitter contact |
| 01/28/2015 | EP2830096A1 III-V semiconductor device with interfacial layer |
| 01/28/2015 | EP2830086A1 Method for manufacturing a spacer for a double-gate electronic memory cell and related electronic memory cell |
| 01/28/2015 | EP2830085A1 Semiconductor device and method for manufacturing same |
| 01/28/2015 | EP2829542A1 Benzobis(thiadiazole) derivative and organic electronics device using same |
| 01/28/2015 | EP2828894A1 Photovoltaic cells |
| 01/28/2015 | EP2828892A1 Electroconductive thin film, coating liquid for forming electroconductive thin film, field-effect transistor, and method for producing field-effect transistor |
| 01/28/2015 | CN204130552U 一种点接触型二极管 For point-contact diode |
| 01/28/2015 | CN204130551U 一种带密封盖的整流二极管 A tape closures of the rectifier diode |
| 01/28/2015 | CN204130550U 一种车用整流二极管 A vehicle with a rectifier diode |
| 01/28/2015 | CN204130549U 一种大电流二极管钝化台面结构 One kind of high-current diodes passivated mesa structure |
| 01/28/2015 | CN204130548U 一种薄膜晶体管、阵列基板、显示装置 A thin film transistor array substrate, a display device |
| 01/28/2015 | CN204130547U 一种半导体场效应管 A semiconductor FET |
| 01/28/2015 | CN204130546U 一种提高单位面积电流密度的vdmos器件结构 Method for improving the current density per unit area of the device structure vdmos |
| 01/28/2015 | CN204130545U 一种减小输入电容的vdmos器件结构 A method of reducing the input capacitance of the device structure vdmos |
| 01/28/2015 | CN204130544U 高压半导体器件 Voltage semiconductor device |
| 01/28/2015 | CN204130543U 垂直功率部件 Vertical power unit |
| 01/28/2015 | CN204130542U 功率半导体器件 Power semiconductor devices |
| 01/28/2015 | CN204130541U 一种平面型二极管 A planar diode |
| 01/28/2015 | CN204130540U 一种面接触型二极管 A surface-contact diode |
| 01/28/2015 | CN204130535U 一种非易失性三维半导体存储器 A nonvolatile semiconductor memory D |
| 01/28/2015 | CN104321880A 电流孔径二极管及其制作方法 Current aperture diode and manufacturing method thereof |
| 01/28/2015 | CN104321879A 具有优化的边缘终止的半导体元器件 With optimized edge termination of semiconductor components |
| 01/28/2015 | CN104321878A 具有多个氮氧化物层的氧化物氮化物氧化物堆栈 Oxide nitride oxide stack having a plurality of oxynitride layers |
| 01/28/2015 | CN104321877A 将ono 集成到逻辑cmos 流程中的方法 Ono cmos logic integrated into the process of method |
| 01/28/2015 | CN104321876A 用于制造碳化硅半导体器件的方法和碳化硅半导体器件 The method of manufacturing a silicon carbide semiconductor device and a silicon carbide semiconductor device for |
| 01/28/2015 | CN104321875A 高耐压半导体装置 High-voltage semiconductor device |
| 01/28/2015 | CN104321874A 载体衬底和铁电层组成的传感器布置以及用于制造和使用的传感器布置的方法 The carrier substrate and the ferroelectric layer is composed of a sensor and a sensor arrangement for making and using the arrangement method |
| 01/28/2015 | CN104321873A 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device |
| 01/28/2015 | CN104321872A 用于浮体单元的互补fet注入 Complementary fet injection unit for floating body |
| 01/28/2015 | CN104321871A 半导体装置和半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device |
| 01/28/2015 | CN104321855A 碳化硅半导体器件 Silicon carbide semiconductor device |
| 01/28/2015 | CN104321327A 苯并双(噻二唑)衍生物及含有其的有机电子装置 Benzo bis (thiadiazole) derivative thereof and an organic electronic device comprising |
| 01/28/2015 | CN104319293A 金属氧化物薄膜晶体管、阵列基板及制作方法、显示装置 A metal oxide thin film transistor array substrate and manufacturing method, a display device |
| 01/28/2015 | CN104319292A 一种新型碳化硅mosfet及其制造方法 A novel method of manufacturing the silicon carbide mosfet |
| 01/28/2015 | CN104319291A 双栅石墨烯鳍式场效应晶体管及其制造方法 Double-gate FinFET graphene and manufacturing method thereof |
| 01/28/2015 | CN104319290A 三栅石墨烯鳍式场效应晶体管及其制造方法 Tri-gate FinFET graphene and manufacturing method thereof |
| 01/28/2015 | CN104319289A Nldmos器件及其制造方法 Nldmos device and manufacturing method |
| 01/28/2015 | CN104319288A 包括电容器结构的电子设备及其形成工艺 Including electronic equipment capacitor structure and formation process |
| 01/28/2015 | CN104319287A 一种沟槽栅型半导体器件结构及其制作方法 One kind of trench gate type semiconductor device structure and fabrication method thereof |
| 01/28/2015 | CN104319286A 一种适用于体硅cmos可抑制寄生闩锁效应的器件结构 One for bulk cmos inhibit parasitic latch device structure |
| 01/28/2015 | CN104319285A 一种薄膜晶体管及其制备方法、阵列基板 A thin film transistor and its preparation method, the array substrate |
| 01/28/2015 | CN104319284A 一种半导体器件结构及其制造方法 A semiconductor device structure and manufacturing method thereof |
| 01/28/2015 | CN104319276A 一种非易失性三维半导体存储器的栅电极及其制备方法 A gate electrode and a method for preparing a three-dimensional non-volatile semiconductor memory |
| 01/28/2015 | CN104319262A 一种多晶氧化物薄膜晶体管阵列基板及其制备方法 A polycrystalline oxide thin film transistor array substrate and its preparation method |
| 01/28/2015 | CN104319238A 形成高电子迁移率半导体器件的方法及其结构 The method of forming a high electron mobility semiconductor device and its structure |
| 01/28/2015 | CN102881689B 阵列基板及其制造方法、液晶显示面板 Array substrate and manufacturing method thereof, a liquid crystal display panel |
| 01/28/2015 | CN102856369B 基于硅衬底氮化物的悬空hemt器件及其制备方法 Based on silicon nitride substrate floating device and fabrication method hemt |
| 01/28/2015 | CN102856177B 半导体器件和用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device |
| 01/28/2015 | CN102822959B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/28/2015 | CN102769028B 半导体结构及其制造方法 Semiconductor structure and manufacturing method |
| 01/28/2015 | CN102751330B 横向高压器件及其制造方法 Lateral high-voltage device and manufacturing method |
| 01/28/2015 | CN102742003B 半导体器件 Semiconductor devices |
| 01/28/2015 | CN102742002B 半导体器件及其驱动方法 Semiconductor device and method of driving |
| 01/28/2015 | CN102738229B 功率晶体管结构及其制作方法 Power transistor structure and method of making |
| 01/28/2015 | CN102668040B 半导体装置以及半导体装置的制造方法 The method of manufacturing a semiconductor device and a semiconductor device |
| 01/28/2015 | CN102646700B 复合缓冲层的氮化物高电子迁移率晶体管外延结构 Nitride high electron mobility transistor epitaxial buffer layer composite structure |
| 01/28/2015 | CN102610643B 沟槽金属氧化物半导体场效应晶体管器件 Trench metal oxide semiconductor field effect transistor device |
| 01/28/2015 | CN102593167B 半导体装置以及功率变换装置 The semiconductor device and power converter |
| 01/28/2015 | CN102569367B 碳化硅半导体器件及其制造方法 Silicon carbide semiconductor device and manufacturing method thereof |
| 01/28/2015 | CN102479803B 半导体器件及其形成方法 Semiconductor device and method for forming |
| 01/28/2015 | CN102473729B 制造半导体装置的方法 The method of manufacturing a semiconductor device |
| 01/28/2015 | CN102468166B 晶体管及其制造方法 Transistor and manufacturing method thereof |
| 01/28/2015 | CN102460663B 用于处理半导体晶片的方法 The method for processing a semiconductor wafer |
| 01/28/2015 | CN102439700B 通过栅极电介质叠层修正进行的阈值电压调整 Gate dielectric stack by correcting the threshold voltage adjustment performed |
| 01/28/2015 | CN102244091B 具有沟槽边缘终端的半导体元件 A semiconductor element having a groove edge terminals |
| 01/28/2015 | CN102214660B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/28/2015 | CN102044424B 包括金属硅化物层的半导体器件及其制造方法 Semiconductor device and manufacturing method including the metal silicide layer |
| 01/28/2015 | CN102034812B 半导体装置 Semiconductor device |
| 01/28/2015 | CN101567417B 氮化物类半导体元件和其制造方法 The nitride-based semiconductor device and manufacturing method thereof |
| 01/27/2015 | US8943591 Methods, systems, and computer program products for mitigating email address harvest attacks by positively acknowledging email to invalid email addresses |
| 01/27/2015 | US8942036 Method for achieving four-bit storage using flash memory having splitting trench gate |
| 01/27/2015 | US8941791 Liquid crystal display device and method of fabricating the same |
| 01/27/2015 | US8941565 EL display device, driving method thereof, and electronic equipment provided with the EL display device |
| 01/27/2015 | US8941416 Semiconductor device |
| 01/27/2015 | US8941412 Amplifiers using gated diodes |
| 01/27/2015 | US8941247 Stacked die package for MEMS resonator system |
| 01/27/2015 | US8941246 Semiconductor device and manufacturing method thereof |
| 01/27/2015 | US8941244 Semiconductor device and manufacturing method thereof |
| 01/27/2015 | US8941238 Semiconductor device |
| 01/27/2015 | US8941231 Electronic chip and method of fabricating the same |
| 01/27/2015 | US8941217 Semiconductor device having a through contact |
| 01/27/2015 | US8941214 Semiconductor device having a necked semiconductor body and method of forming semiconductor bodies of varying width |
| 01/27/2015 | US8941213 Semiconductor device |
| 01/27/2015 | US8941211 Integrated circuit using deep trench through silicon (DTS) |
| 01/27/2015 | US8941210 Semiconductor devices having a trench isolation layer and methods of fabricating the same |
| 01/27/2015 | US8941207 Surface (lateral) voltage-sustaining region with an insulator film containing conductive particles |
| 01/27/2015 | US8941206 Semiconductor device including a diode and method of manufacturing a semiconductor device |
| 01/27/2015 | US8941205 Method of generating electrical energy in an integrated circuit during the operation of the latter, corresponding integrated circuit and method of fabrication |
| 01/27/2015 | US8941201 Display panel and display device |
| 01/27/2015 | US8941196 Precessional reversal in orthogonal spin transfer magnetic RAM devices |
| 01/27/2015 | US8941195 Semiconductor device having insulating layer formed through oxidization of electrode |
| 01/27/2015 | US8941194 Pressure sensor device having bump chip carrier (BCC) |
| 01/27/2015 | US8941193 Method for manufacturing a hybrid integrated component |