Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1978
11/14/1978US4125426 Method of manufacturing semiconductor device
11/14/1978US4125418 Utilization of a substrate alignment marker in epitaxial deposition processes
11/14/1978US4125415 Method of making high voltage semiconductor structure
11/14/1978US4124934 Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconductor devices thus manufactured
11/14/1978CA1042560A1 Semiconductor surface passivation films containing a12o3
11/14/1978CA1042559A1 Closely spaced ic contact structure and manufacture
11/14/1978CA1042558A1 Thyristor with branched base
11/14/1978CA1042534A1 Method of making a light activated semiconductor controlled rectifier
11/07/1978US4124862 Charge transfer filter
11/07/1978US4124861 Charge transfer filter
11/07/1978CA1042101A1 Integrated circuit memory cell
10/1978
10/31/1978US4123771 Metal nitride oxide
10/31/1978US4123564 Method of producing semiconductor device
10/31/1978US4123300 High density
10/31/1978US4123295 Mercury chalcogenide contact for semiconductor devices
10/31/1978CA1041674A1 Semiconductor device
10/31/1978CA1041673A1 Transistor
10/31/1978CA1041672A1 High efficiency gallium arsenide impatt diodes
10/31/1978CA1041616A1 Transistor amplifier
10/24/1978US4122543 Non-volatile memory for fast signals
10/24/1978US4122483 Semiconductor device having reduced leakage current
10/24/1978US4122407 Heterostructure junction light emitting or responding or modulating devices
10/24/1978US4121334 Application of field-assisted bonding to the mass production of silicon type pressure transducers
10/24/1978US4121333 Method of manufacturing a two-phase charge-transfer semiconductor device and a device obtained by said method
10/24/1978CA1041226A1 P-type-epitaxial-base transistor with base-collector schottky diode clamp
10/24/1978CA1041221A1 Thermally balanced pn junction
10/24/1978CA1041211A1 Filament-type memory semiconductor device and method of making the same
10/17/1978US4121240 Semiconductor device having a discharge-formed insulating film
10/17/1978US4121239 Controllable semiconductor component for two current directions
10/17/1978US4121117 Regenerator circuit for CCD arrangements
10/17/1978US4120705 Vacuum deposition process for fabricating a CdS--Cu2 S heterojunction solar cell device
10/17/1978CA1040749A1 Method of manufacturing fine line conductors on semiconductors
10/17/1978CA1040745A1 Semiconductor switching device having unusual shorted emitter configuration
10/10/1978US4120035 Electrically reprogrammable transversal filter using charge coupled devices
10/10/1978US4119996 Complementary DMOS-VMOS integrated circuit structure
10/10/1978US4119995 Electrically programmable and electrically erasable MOS memory cell
10/10/1978US4119994 Heterojunction and process for fabricating same
10/10/1978US4119993 Gallium arsenide transistor
10/10/1978US4119992 Integrated circuit structure and method for making same
10/10/1978US4119446 Method for forming a guarded Schottky barrier diode by ion-implantation
10/10/1978US4119440 Method of making ion implanted zener diode
10/10/1978CA1040322A1 Method of making a semiconductor structure using backside exposure
10/10/1978CA1040321A1 Polycrystalline silicon resistive device for integrated circuits and method for making same
10/10/1978CA1040320A1 Depletion isolated semiconductor on insulator structures
10/10/1978CA1040076A1 Stabilized droplet method of making deep diodes
10/10/1978CA1039919A1 Structural panels
10/03/1978US4118795 Two-phase CCD regenerator - I/O circuits
10/03/1978US4118728 Integrated circuit structures utilizing conductive buried regions
10/03/1978US4118257 Method for producing a semiconductor device having monolithically integrated units in a semiconductor body
10/03/1978US4118251 Semiconductors, integrated circuits, dopes, heat treatment, diffusion
10/03/1978US4118250 Process for producing integrated circuit devices by ion implantation
09/1978
09/26/1978US4117507 Diode formed in integrated-circuit structure
09/26/1978US4117505 Thyristor with heat sensitive switching characteristics
09/26/1978US4117504 Heterogeneous semiconductor structure with composition gradient and method for producing same
09/26/1978US4117347 Charged splitting method using charge transfer device
09/26/1978US4116732 Method of manufacturing a buried load device in an integrated circuit
09/26/1978US4116722 Method for manufacturing compound semiconductor devices
09/26/1978US4116721 Gate charge neutralization for insulated gate field-effect transistors
09/26/1978US4116720 Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance
09/26/1978US4116719 Method of making semiconductor device with PN junction in stacking-fault free zone
09/26/1978US4115914 Electrically erasable non-volatile semiconductor memory
09/26/1978CA1039405A1 Multi-ripple charge coupled device
09/19/1978US4115799 Thin film copper transition between aluminum and indium copper films
09/19/1978US4115798 Semiconductor component having patterned recombination center means with different mean value of recombination centers on anode side from that on cathode side
09/19/1978US4115797 Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
09/19/1978US4115794 Charge pumping device with integrated regulating capacitor and method for making same
09/19/1978US4115793 Field effect transistor with reduced series resistance
09/19/1978US4114255 Floating gate storage device and method of fabrication
09/19/1978US4114254 Polycrystalline silicon, oxidation
09/19/1978CA1038969A1 Edge contouring of semiconductor wafers
09/19/1978CA1038968A1 Manufacture of complementary vertical transistors
09/19/1978CA1038967A1 Mosfet transistor and method of fabrication
09/12/1978US4114178 Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate
09/12/1978US4113533 Method of making a mos device
09/12/1978US4113516 Method of forming a curved implanted region in a semiconductor body
09/12/1978US4113515 Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen
09/12/1978US4113514 Method of passivating a semiconductor device by treatment with atomic hydrogen
09/12/1978US4113512 Technique for preventing forward biased epi-isolation degradation
09/12/1978US4112670 Electronic timepiece
09/12/1978CA1038504A1 Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein
09/12/1978CA1038502A1 Semiconductor switch device
09/12/1978CA1038496A1 Dynamic memory with non-volatile back-up mode
09/12/1978CA1038461A1 Gain control circuits
09/05/1978US4112510 Dynamic memory cell with automatic refreshing
09/05/1978US4112507 Metal-nitride-oxide-silicon
09/05/1978US4112458 Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C
09/05/1978US4112456 Stabilized charge injector for charge coupled devices with means for increasing the speed of propagation of charge carriers
09/05/1978US4112455 Field-effect transistor with extended linear logarithmic transconductance
09/05/1978US4112333 Display panel with integral memory capability for each display element and addressing system
09/05/1978US4112316 Charge coupled device circuit with increased signal bandwidth
09/05/1978US4111726 Bipolar integrated circuit process by separately forming active and inactive base regions
09/05/1978US4111725 Gallium arsenide
09/05/1978US4111724 Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique
09/05/1978US4111720 Method for forming a non-epitaxial bipolar integrated circuit
09/05/1978US4111719 Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium
09/05/1978US4110899 Method for manufacturing complementary insulated gate field effect transistors
09/05/1978CA1038085A1 Collector-up semiconductor structure and method
09/05/1978CA1038084A1 Thyristor with shorted emitter
09/05/1978CA1038083A1 Bilateral switching integrated circuit
09/05/1978CA1038080A1 Overlapping gate buried channel charge coupled device
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