Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1978
09/05/1978CA1037876A1 Touch keyboard
08/1978
08/29/1978US4110839 Non-volatile long memory for fast signals
08/29/1978US4110835 Bucket brigade circuit for signal scaling
08/29/1978US4110782 Monolithic integrated circuit transistor having very low collector resistance
08/29/1978US4110781 Bidirectional grooved thyristor fired by activation of the beveled surfaces
08/29/1978US4110780 Semiconductor power component
08/29/1978US4110779 High frequency transistor
08/29/1978US4110777 Charge-coupled device
08/29/1978US4110776 Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
08/29/1978US4110775 Schottky diode with voltage limiting guard band
08/29/1978US4110638 Configuration for reducing the turn-off time of a thyristor
08/29/1978US4110637 Electronic system for capacitively storing a signal voltage of predetermined level
08/29/1978US4110633 Depletion/enhancement mode FET logic circuit
08/29/1978US4110488 Method for making schottky barrier diodes
08/29/1978US4110126 NPN/PNP Fabrication process with improved alignment
08/29/1978US4110125 Method for fabricating semiconductor devices
08/29/1978US4109372 Method for making an insulated gate field effect transistor utilizing a silicon gate and silicide interconnection vias
08/29/1978US4109371 Process for preparing insulated gate semiconductor
08/29/1978CA1037613A1 Method of aligning edges of emitter and its metalization in a semiconductor device
08/29/1978CA1037612A1 Variable capacity diode device
08/29/1978CA1037600A1 Charge coupled optical scanner
08/22/1978US4109274 Semiconductor switching device with breakdown diode formed in the bottom of a recess
08/22/1978US4109273 Silicon
08/22/1978US4109272 Silicon film
08/22/1978US4109270 Semiconductor store
08/22/1978US4109169 Avalanche memory triode and logic circuits
08/22/1978US4109029 High resolution electron beam microfabrication process for fabricating small geometry semiconductor devices
08/22/1978US4108738 Method for forming contacts to semiconductor devices
08/22/1978US4108686 Method of making an insulated gate field effect transistor by implanted double counterdoping
08/22/1978US4107835 Dopant ions, deposition of metal on silicon
08/22/1978CA1037160A1 Semiconductor device having at least one pn junction and channel stopper surrounded by a protective conducting layer
08/15/1978US4107731 Silicon doped with cadmium to reduce lifetime
08/15/1978US4107720 Overlay metallization multi-channel high frequency field effect transistor
08/15/1978US4107719 Inverse planar transistor
08/15/1978US4107670 Charge coupled digital to analog converter
08/15/1978US4107550 Bucket brigade circuits
08/15/1978US4106959 Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system
08/15/1978US4106954 Method of manufacturing transistors by means of ion implantation
08/15/1978US4106953 Semiconductors
08/15/1978CA1036714A1 Thyristor
08/15/1978CA1036473A1 Process for the localised etching of silicone crystals
08/15/1978CA1036470A1 Deposition of solid semiconductor compositions and novel semiconductor materials
08/15/1978CA1036345A1 Dielectric composition for forming electric current regulating junctions
08/08/1978US4106051 Molybdenum or tungsten layer
08/08/1978US4106048 Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
08/08/1978US4106045 Field effect transistors
08/08/1978US4106044 Field effect transistor having unsaturated characteristics
08/08/1978US4106043 Zener diodes
08/08/1978US4105901 Monostable circuit
08/08/1978US4105478 Mercury cadmium telluride with lithium
08/08/1978US4105477 Doping of (hg,cd)te with a group va element
08/08/1978US4105476 Silicon wafer with diborane impurity by triple diffusion process
08/08/1978US4105475 Epitaxial method of fabricating single igfet memory cell with buried storage element
08/08/1978US4105472 Semiconductors
08/08/1978US4104786 Method of manufacture of a semiconductor device
08/01/1978US4104732 Static RAM cell
08/01/1978US4104697 Metal-nitride-oxide-silicon chip
08/01/1978US4104676 Semiconductor device with pressure electrical contacts having irregular surfaces
08/01/1978US4104675 Moderate field hole and electron injection from one interface of MIM or MIS structures
08/01/1978US4104673 Field effect pentode transistor
08/01/1978US4104672 High power gallium arsenide schottky barrier field effect transistor
08/01/1978US4104543 Multichannel CCD signal subtraction system
08/01/1978US4104085 Method of manufacturing a semiconductor device by implanting ions through bevelled oxide layer in single masking step
08/01/1978US4103415 Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
07/1978
07/25/1978US4103347 Zig-zag sps ccd memory
07/25/1978US4103344 Method and apparatus for addressing a non-volatile memory array
07/25/1978US4103312 Semiconductor memory devices
07/25/1978US4103273 Method for batch fabricating semiconductor devices
07/25/1978US4103245 Transistor amplifier for low level signal
07/25/1978US4103227 Ion-controlled diode
07/25/1978US4102766 Alkali metal or an alkaline-earth metal reductant, silicon halide, doping agent reacted to produce metal salts and liquid silicon
07/25/1978US4102733 Two and three mask process for IGFET fabrication
07/25/1978US4102732 Method for manufacturing a semiconductor device
07/25/1978US4102714 Process for fabricating a low breakdown voltage device for polysilicon gate technology
07/18/1978US4101922 Field effect transistor with a short channel length
07/18/1978US4101921 Memory type insulating gate field effect semiconductor device
07/18/1978US4101350 Self-aligned epitaxial method for the fabrication of semiconductor devices
07/18/1978US4101344 Doping silicon with arsenic or antimony
07/11/1978US4100565 Monolithic resistor for compensating beta of a lateral transistor
07/11/1978US4100564 Power transistor device
07/11/1978US4100563 Semiconductor magnetic transducers
07/11/1978US4100561 Protective circuit for MOS devices
07/11/1978US4099999 Method of making etched-striped substrate planar laser
07/11/1978US4099998 Method of making zener diodes with selectively variable breakdown voltages
07/11/1978US4099997 Method of fabricating a semiconductor device
07/11/1978US4099987 Fabricating integrated circuits incorporating high-performance bipolar transistors
07/11/1978US4099318 Semiconductor devices
07/11/1978US4099317 Method for fabricating self-aligned CCD devices and their output self-aligned MOS transistors on a single semiconductor substrate
07/04/1978US4099197 Complementary input structure for charge coupled device
07/04/1978US4099196 Triple layer polysilicon cell
07/04/1978US4099175 Charge-coupled device digital-to-analog converter
07/04/1978US4099069 Circuit producing a common clear signal for erasing selected arrays in a mnos memory system
07/04/1978US4098921 Tantalum-gallium arsenide schottky barrier semiconductor device
07/04/1978US4098638 Etching, semiconductors
07/04/1978US4097986 Manufacturing process for the collective production of semiconductive junction devices
06/1978
06/27/1978US4097890 Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
06/27/1978US4097887 Low resistance, durable gate contact pad for thyristors
06/27/1978US4097886 Split electrode structure for semiconductor devices
06/27/1978US4097885 Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material
06/27/1978US4097829 Thermoelectric compensation for voltage control devices
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