| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/15/1982 | EP0059796A1 NPN lateral transistor isolated from a substrate by orientation-dependent etching, and method of making it |
| 09/15/1982 | EP0059720A1 Emitter design for improved rbsoa and switching of power transistors |
| 09/14/1982 | US4349797 Phase-compensated integrated circuit |
| 09/14/1982 | US4349749 Integrated circuit for transferring complementary charge packets between two charge transfer devices |
| 09/14/1982 | US4349395 Method for producing MOS semiconductor device |
| 09/14/1982 | US4349394 Method of making a zener diode utilizing gas-phase epitaxial deposition |
| 09/14/1982 | US4348802 Process for producing a semiconductor device |
| 09/14/1982 | CA1131801A1 Semiconductor device |
| 09/14/1982 | CA1131800A1 High voltage junction solid-state switch |
| 09/14/1982 | CA1131797A1 Fabrication of a semiconductor device in a simulated epitaxial layer |
| 09/14/1982 | CA1131796A1 Method for fabricating mos device with self-aligned contacts |
| 09/14/1982 | CA1131778A1 Charge coupled devie (ccd) input circuit operating according to the fill and spill principle |
| 09/14/1982 | CA1131777A1 Highly integrated dynamic memory element |
| 09/14/1982 | CA1131761A1 Mechanically biased semiconductor strain sensitive microphone |
| 09/14/1982 | CA1131759A1 Semiconductor absolute pressure transducer assembly and method |
| 09/14/1982 | CA1131703A1 Semiconductor switch |
| 09/10/1982 | EP0037818A4 Current source having saturation protection. |
| 09/08/1982 | EP0059547A1 Clock controlled anti-blooming for virtual phase CCD's |
| 09/08/1982 | EP0059539A1 Pressure sensing device |
| 09/08/1982 | EP0059266A2 Lateral transistor separated from substrate by intersecting slots filled with a substrate oxide for minimal interference therefrom and method for producing same |
| 09/08/1982 | EP0059264A1 NPN Type lateral transistor with minimal substrate operation interference and method for producing same |
| 09/07/1982 | US4348746 Semiconductor integrated circuit device having a plurality of insulated gate field effect transistors |
| 09/07/1982 | US4348687 Clamping assembly for thyristor column |
| 09/07/1982 | US4347656 Charge coupled devices employing two levels of metallization |
| 09/07/1982 | CA1131367A1 Self-aligned mesfet having reduced series resistance |
| 09/02/1982 | WO1982002982A1 Method and device for rectification of alternating current |
| 09/02/1982 | WO1982002981A1 Mos power transistor |
| 09/01/1982 | EP0058998A1 Semiconductor memory device |
| 09/01/1982 | EP0058748A1 Mask programmable read-only memory stacked above a semiconductor substrate |
| 08/25/1982 | EP0058604A1 Method for manufacturing a semiconductor structure having reduced lateral spacing between buried regions |
| 08/25/1982 | EP0058577A1 Semiconductor device with deviation of "ballistic transport" type electrons, and method of making the same |
| 08/25/1982 | EP0058566A2 Process for producing a semiconductor device using a diffusion step |
| 08/25/1982 | EP0058548A1 Method of producing MOSFET type semiconductor device |
| 08/25/1982 | EP0058337A2 Process for predicting oxygen precipitation in semiconductor wafers |
| 08/24/1982 | US4345477 Semiconduction stress sensing apparatus |
| 08/24/1982 | US4345366 Self-aligned all-n+ polysilicon CMOS process |
| 08/24/1982 | US4345364 Method of making a dynamic memory array |
| 08/24/1982 | CA1130475A1 Light activated silicon switch |
| 08/24/1982 | CA1130474A1 Epitaxial tunnels |
| 08/24/1982 | CA1130473A1 Mosfet substrate sensitivity control |
| 08/24/1982 | CA1130472A1 Semiconductor integrated circuit |
| 08/24/1982 | CA1130470A1 Capacitance diode |
| 08/24/1982 | CA1130469A1 Capacitance diode |
| 08/24/1982 | CA1130458A1 V-groove charge-coupled device |
| 08/24/1982 | CA1130378A1 Ion selective field-effect sensor |
| 08/19/1982 | WO1982002799A1 Semiconductor device |
| 08/18/1982 | EP0058124A1 Polycrystalline silicon Schottky diode array and method of manufacturing |
| 08/18/1982 | EP0058049A2 Defect-remediable semiconductor integrated circuit memory with spare substitution |
| 08/18/1982 | EP0057784A2 Read-only/read-write memory |
| 08/17/1982 | US4345266 Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure |
| 08/17/1982 | US4345265 MOS Power transistor with improved high-voltage capability |
| 08/17/1982 | US4345166 Current source having saturation protection |
| 08/17/1982 | US4344980 Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity |
| 08/17/1982 | US4344815 Heat treatment, electrical resistance |
| 08/17/1982 | US4344222 Made by oxidizing a metal in silicon dioxide by sintering |
| 08/17/1982 | CA1130013A1 Method for forming a narrow dimensioned region on a body |
| 08/17/1982 | CA1129973A1 Integrated logic circuit |
| 08/11/1982 | EP0057605A2 A Schottky-barrier gate field effect transistor and a process for the production of the same |
| 08/11/1982 | EP0057563A2 Semiconductor integrated circuit |
| 08/11/1982 | EP0057558A2 Field effect semiconductor device and method of manufacturing such a device |
| 08/11/1982 | EP0057549A2 Semiconductor device |
| 08/11/1982 | EP0057336A2 Bipolar transistor with base plate |
| 08/11/1982 | EP0057256A2 Vertical MIS field effect transistor with low forward resistance |
| 08/10/1982 | US4344081 Combined DMOS and a vertical bipolar transistor device and fabrication method therefor |
| 08/10/1982 | US4344080 Field effect transistor |
| 08/10/1982 | US4344047 Millimeter-wave power limiter |
| 08/10/1982 | US4343875 Method for the etching of silicon substrates and substrate for the execution of the method |
| 08/10/1982 | US4343832 Semiconductor devices by laser enhanced diffusion |
| 08/10/1982 | US4343657 Process for producing a semiconductor device |
| 08/10/1982 | US4343388 Apparatus for sorting articles |
| 08/10/1982 | US4343082 Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device |
| 08/10/1982 | US4343081 Process for making semi-conductor devices |
| 08/10/1982 | US4343080 Method of producing a semiconductor device |
| 08/10/1982 | US4343079 Self-registering method of manufacturing an insulated gate field-effect transistor |
| 08/10/1982 | US4343078 IGFET Forming method |
| 08/10/1982 | CA1129550A1 Mos dynamic memory in a diffusion current limited semiconductor structure |
| 08/04/1982 | EP0057135A2 Low resistance Schottky diode on polysilicon/metal-silicide |
| 08/04/1982 | EP0057126A2 Process for the manufacture of a transistor |
| 08/04/1982 | EP0057024A1 Semiconductor device having a safety device |
| 08/04/1982 | EP0056904A2 High electron mobility single heterojunction semiconductor devices and methods of production of such devices |
| 08/04/1982 | EP0056856A1 Method for forming P-N junctions, particularly in IGFET devices, with improved drain voltage characteristics |
| 08/03/1982 | US4343015 Vertical channel field effect transistor |
| 08/03/1982 | US4343014 Light-ignitable thyristor with anode-base duct portion extending on cathode surface between thyristor portions |
| 08/03/1982 | US4342926 Bias current reference circuit |
| 08/03/1982 | US4342616 Technique for predicting oxygen precipitation in semiconductor wafers |
| 08/03/1982 | US4342227 Planar semiconductor three direction acceleration detecting device and method of fabrication |
| 08/03/1982 | US4342149 Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation |
| 08/03/1982 | CA1129119A1 Thyristor with an imprved di/dt capability |
| 08/03/1982 | CA1129117A1 Method of manufacturing a device in a silicon wafer |
| 07/28/1982 | EP0056737A2 Method of manufacturing a semiconductor device using molecular beam epitaxy |
| 07/28/1982 | EP0056571A2 Multi-emitter type npn transistor |
| 07/28/1982 | EP0056482A2 Glass passivation semiconductor device and method of manufacturing the same |
| 07/28/1982 | EP0056434A2 Monolithic integrated semiconductor memory |
| 07/27/1982 | US4342099 Electrically erasable programmable MNOS read only memory |
| 07/27/1982 | US4342044 Method for optimizing photoresponsive amorphous alloys and devices |
| 07/27/1982 | US4341011 Method of manufacturing semiconductor device |
| 07/27/1982 | US4341009 Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate |
| 07/27/1982 | CA1128672A1 Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semi-conductor material |
| 07/27/1982 | CA1128670A1 Semiconductor device having a mos-capacitor |
| 07/21/1982 | EP0056195A2 Nonvolatile semiconductor memory device |