Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/1982
07/21/1982EP0056191A2 Integrated injection logic
07/21/1982EP0056186A2 Integrated circuit device with interconnect-level logic diodes
07/21/1982EP0056084A1 Electrostatically deformographic switches
07/20/1982US4340953 Information recording medium and recording and reproducing system using the same
07/20/1982US4340900 Mesa epitaxial diode with oxide passivated junction and plated heat sink
07/20/1982US4339870 Series-connected two-terminal semiconductor devices and their fabrication
07/14/1982EP0055968A2 Field effect transistor, normally in "off" position, having a short switching time
07/14/1982EP0055932A1 Schottky gate electrode for a compound semiconductor device, and method of manufacturing it
07/14/1982EP0055906A2 Semiconductor memory device
07/14/1982EP0055803A2 Semiconductor memory
07/14/1982EP0055799A2 Non-volatile dynamic random access memory cell
07/13/1982US4339767 High performance PNP and NPN transistor structure
07/13/1982US4339765 Transistor device
07/13/1982US4339764 PbSx Se1-x semiconductor
07/13/1982US4339710 MOS Integrated test circuit using field effect transistors
07/13/1982US4339672 Delay circuit constituted by MISFETs
07/13/1982US4339668 Monolithically integrated circuit of high dielectric strength for electrically coupling isolated circuits
07/08/1982WO1982002283A1 Method for fabricating complementary semiconductor devices
07/08/1982WO1982002275A1 Programmable memory cell and array
07/07/1982EP0055644A1 MOS transistor with bipolar operation in saturation
07/07/1982EP0055608A2 Semiconductor memory device and method of making it
07/07/1982EP0055571A2 ECL integrated circuit
07/07/1982EP0055558A2 Method of manufacturing a semiconductor device
07/07/1982EP0055557A2 Nonvolatile semiconductor memory device
07/07/1982EP0055552A2 Input protection circuit for an MIS transistor
07/07/1982EP0055451A2 Semiconductor memory device
07/07/1982EP0055412A2 Lateral NPN transistor and method
07/07/1982EP0055411A2 Extremely small area NPN lateral transistor and method
07/07/1982EP0055408A1 Method of manufacturing a non-volatile memory and non-volatile memory
07/06/1982US4338622 Self-aligned semiconductor circuits and process therefor
07/06/1982US4338618 Composite static induction transistor and integrated circuit utilizing same
07/06/1982US4338617 Four terminal GTO thyristor with transistor controlled turn-off
07/06/1982US4338616 Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
07/06/1982US4338138 For high speed, low power performance integrated circuits
07/06/1982CA1127322A1 Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
06/1982
06/30/1982EP0055182A2 High speed nonvolatile electrically erasable memory cell and system
06/30/1982EP0055161A1 Multilayer metal silicide interconnections for integrated circuits
06/30/1982EP0055140A2 Method of manufacturing a GaAs field effect transistor
06/30/1982EP0055110A2 Nonvolatile high density JFET RAM cell
06/30/1982EP0055032A2 Field effect transistors
06/30/1982EP0054998A1 Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process
06/30/1982EP0054764A2 A method of trimming the resistance of a semiconductor resistor device
06/30/1982EP0054740A2 Zener diode burn prom
06/30/1982EP0054707A1 Acceleration detecting devices and methods of fabrication thereof
06/30/1982EP0054655A2 Schottky diode and process for its production
06/30/1982EP0054649A1 Method of manufacturing a monolithic semiconductor integrated circuit
06/30/1982EP0054648A2 pn Diode and process for its production
06/29/1982US4337476 Silicon rich refractory silicides as gate metal
06/29/1982US4337475 High power transistor with highly doped buried base layer
06/29/1982US4337474 Semiconductor device
06/29/1982US4337473 Junction field effect transistor having unsaturated drain current characteristic with lightly doped drain region
06/29/1982CA1126876A1 Method for fabricating self-aligned high resolution non planar devices employing low resolution registration
06/29/1982CA1126875A1 Dielectrically-isolated integrated circuit complementary transistors for high voltage use
06/29/1982CA1126631A1 Isotropic etching of silicon strain gages
06/23/1982EP0054471A2 Semiconductor resistor element
06/23/1982EP0054434A2 Semiconductor device
06/23/1982EP0054420A2 Functional electric devices
06/23/1982EP0054355A2 Semiconductor memory device
06/23/1982EP0054303A2 Semiconductor integrated circuit
06/23/1982EP0054259A2 Method of manufacturing a semiconductor device of the MIS type
06/23/1982EP0054163A2 Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate and method for making a field effect transistor
06/23/1982EP0054129A2 Method for forming a conductor line in an integrated semiconductor memory and an integrated semiconductor memory with cells including a capacitor and a field effect transistor
06/23/1982EP0054121A1 Method of manufacturing a one-transistor memory cell using the single silicon layer technique
06/23/1982EP0054117A1 Method of forming integrated MOSFET dynamic random access memories
06/23/1982EP0054110A1 ROM with redundant ROM cells employing a highly resistive polysilicon film for programming the cells
06/23/1982EP0054102A2 Very high density cells comprising a ROM and method of manufacturing same
06/22/1982US4336604 Monolithic static memory cell
06/22/1982US4336603 Three terminal electrically erasable programmable read only memory
06/22/1982US4336550 CMOS Device with silicided sources and drains and method
06/22/1982US4336549 Schottky-barrier gate gallium arsenide field effect devices
06/22/1982US4336466 Substrate bias generator
06/22/1982US4335505 Method of manufacturing semiconductor memory device having memory cell elements composed of a transistor and a capacitor
06/22/1982US4335502 Method for manufacturing metal-oxide silicon devices
06/22/1982CA1126412A1 Gate turn-off thyristor
06/16/1982EP0053878A2 Semiconductor memory device
06/16/1982EP0053854A1 High voltage semiconductor devices
06/16/1982EP0053712A1 Method of improving the conductivity of a microelectronic conductive tungsten silicide film and semiconductor device comprising said film
06/16/1982EP0053683A1 Method of making integrated circuit IGFET devices
06/16/1982EP0053672A2 Method of producing a one-transistor memory cell employing the double silicon layer technique
06/16/1982EP0053654A2 High capacitance single transistor memory cell suitable for high density RAM applications
06/15/1982US4335450 Non-destructive read out field effect transistor memory cell system
06/15/1982US4335392 Semiconductor device with at least two semiconductor elements
06/15/1982US4335391 Non-volatile semiconductor memory elements and methods of making
06/15/1982US4335362 Semiconductor device and a method of contacting a partial region of a semiconductor surface
06/15/1982US4335161 Vacuum deposition through mask
06/15/1982US4334347 Method of forming an improved gate member for a gate injected floating gate memory device
06/15/1982CA1125924A1 Nonalloyed ohmic contacts to n-type group iii(a)-v(a) semiconductors
06/15/1982CA1125922A1 Mis heterojunction structures
06/15/1982CA1125914A1 Line-addressable random-access memory decoupling apparatus
06/15/1982CA1125896A1 Amorphous semiconductors equivalent to crystalline semiconductors
06/10/1982WO1982001962A1 Gate modulation input circuit with polycrystalline silicon resistors
06/09/1982EP0053486A2 Stress sensing apparatus
06/09/1982EP0053273A2 Integrated cirucit with a programmable non-volatile semiconductor memory
06/09/1982EP0053213A1 Capacitor with four-pole structure, the integrity of which can be controlled by direct current tests
06/09/1982EP0053113A1 Control circuitry using two branch circuits for high-voltage solid-state switches.
06/08/1982US4334292 Low voltage electrically erasable programmable read only memory
06/08/1982US4334236 One-transistor dynamic ram with poly bit lines
06/08/1982US4334235 Insulated gate type semiconductor device
06/08/1982US4333964 Silicon semiconductor substrate with layers of silicon dioxide and silicon nitride, patterns
06/08/1982US4333794 Omission of thick Si3 N4 layers in ISA schemes
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