Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1982
10/27/1982EP0063209A1 Magnetically sensitive transistors utilizing Lorentz field potential modulation of carrier injection
10/27/1982EP0063139A1 Method of making a planar iii-v bipolar transistor by selective ion implantation and a device made therewith
10/27/1982EP0016768B1 Mounting semi-conductor elements with insulating envelope
10/26/1982US4356503 Latching transistor
10/26/1982US4356502 Protection circuit for a semiconductor device
10/26/1982US4356463 Filtering device using the transfer of electrical charges into a semiconductor
10/26/1982US4356453 Reduced noise-improved gain transistor circuit
10/26/1982US4356407 Input circuit for bucket brigade
10/26/1982US4356041 Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer
10/26/1982US4355455 Method of manufacture for self-aligned floating gate memory cell
10/26/1982US4355454 Method for fabricating a metal oxide semiconductor
10/20/1982EP0062982A2 Isolated integrated circuit comprising a substrate electrode
10/20/1982EP0062883A2 Method of manufacturing an integrated planar bipolar transistor
10/20/1982EP0062725A1 Method of making an integrated planar transistor
10/19/1982US4355375 Semiconductor memory device
10/19/1982US4355374 Semiconductor memory device
10/19/1982US4355344 Protective device electronic semiconductor component
10/19/1982US4355322 Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor
10/19/1982US4354309 Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon
10/19/1982US4354308 Method for manufacture of a selective chemical sensitive FET transducer
10/19/1982US4354307 Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
10/19/1982CA1134062A1 Semiconductor device by diffusion of zinc or cadmium
10/19/1982CA1134060A1 Epitaxial manufacture of a semiconductor device having a multi-layer structure
10/19/1982CA1134057A1 Glass-sealed power thyristor
10/19/1982CA1134056A1 Field effect transistor with insulated gate electrode
10/19/1982CA1134055A1 Semiconductor device
10/19/1982CA1134054A1 Integrated circuit
10/19/1982CA1134037A1 Bi-polar dual-channel charge-coupled device
10/19/1982CA1134021A1 Pressure transducer having electrically shielded piezoresistive sensors
10/14/1982WO1982003498A1 Electronic circuit
10/14/1982WO1982003497A1 Gated diode switch
10/14/1982WO1982003496A1 Planar semiconductor devices having pn junctions
10/14/1982WO1982003495A1 Process for fabricating a self-aligned buried channel and the product thereof
10/13/1982EP0062460A2 Electrically-erasable non-volatile semiconductor memory elements
10/13/1982EP0062417A2 Semiconductor device including a transistor and a capacitor and method for manufacturing it
10/13/1982EP0062170A2 Process for forming self-aligned dielectric isolation
10/13/1982EP0062102A2 Thyristor with connectible internal-current amplification, and process for its operation
10/13/1982EP0062100A2 Thyristor with internal-current amplification, and process for its operation
10/13/1982EP0062099A2 Thyristor, and process for its operation
10/13/1982EP0062079A1 Thin silicon film and process for preparing same
10/12/1982US4354121 Field controlled thyristor control circuit with additional FCT in reverse bias circuit
10/12/1982US4353935 Method of manufacturing a device having a conductor pattern
10/12/1982US4353754 Annealing to control leakage current into element having defect layer
10/12/1982CA1133636A1 Substrate coupled floating gate memory cell
10/06/1982EP0061923A1 Semiconductor device having a polycrystalline thin film
10/06/1982EP0061859A2 Semiconductor memory device
10/06/1982EP0061729A2 Process for producing integrated semiconductor device structures with a mesa configuration and structure of said type
10/06/1982EP0061700A2 Method for forming schottky-barrier diodes
10/06/1982EP0061551A2 Planar type semiconductor device with a high breakdown voltage
10/06/1982EP0061512A1 Integrated circuit for writing, reading and erasing memory matrixes composed of insulated-layer field-effect transistors
10/05/1982US4353083 Low voltage nonvolatile memory device
10/05/1982US4353082 Buried sense line V-groove MOS random access memory
10/05/1982US4353081 Graded bandgap rectifying semiconductor devices
10/05/1982US4352726 Having a polymer made from a giant heterocyclic compound
10/05/1982US4352238 Process for fabricating a vertical static induction device
10/05/1982US4352237 Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes
10/05/1982US4352236 Growing field oxide for a semiconductor memory
10/05/1982CA1133149A1 Field effect transistor devices
10/05/1982CA1133148A1 Monolithically integrated circuit of high dielectric strength for electrically coupling isolated circuits
10/05/1982CA1133136A1 Single electrode u-mosfet random access memory
10/05/1982CA1133134A1 Semicondutor charge transfer devices
10/05/1982CA1133133A1 Non-volatile memory devices fabricated from graded or stepped energy band gap insulator mim or mis structures
09/1982
09/29/1982EP0061421A1 Integrated circuit for a frequency-controlled oscillator
09/29/1982EP0061388A2 Binary germanium-silicon interconnect structure for integrated circuits
09/29/1982EP0061387A2 Logic gate structure using space charge limited transistors
09/29/1982EP0061376A1 Planar field-effect transistor having elektrodes comprising metallised holes, and process for manufacturing the transistor
09/29/1982EP0061202A1 Semiconductor memory device
09/29/1982EP0061063A2 Semiconductor device with a high blocking capability
09/29/1982EP0061046A1 Reversely non-conducting thyristor
09/29/1982EP0060989A2 High voltage on chip fet driver
09/29/1982EP0060912A1 Thyristor having a disconnectible emitter short
09/28/1982US4352187 Having an electrode consisting of a chromium-gold alloy on a doped gallium arsenide layer overlying a gallium aluminum arsenide layer
09/28/1982US4352118 Thyristor with segmented turn-on line for directing turn-on current
09/28/1982US4352115 Gallium arsenide with germanium-filled micropits
09/28/1982US4351942 Isochromans
09/28/1982US4351856 Evaporation of a polycrystalline silicon film on a substrate
09/28/1982US4351706 Electrochemically eroding semiconductor device
09/28/1982US4351677 Method of manufacturing semiconductor device having aluminum diffused semiconductor substrate
09/28/1982US4351674 Method of producing a semiconductor device
09/28/1982US4351100 Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes
09/28/1982US4351099 Method of making FET utilizing shadow masking and diffusion from a doped oxide
09/28/1982CA1132722A1 Microelectronic fabrication method minimizing threshold voltage variation
09/28/1982CA1132720A1 Two terminal field effect resistor
09/22/1982EP0060761A1 Lateral bipolar transistor and process for its manufacture
09/22/1982EP0060676A2 A method for the production of a semiconductor device comprising annealing a silicon wafer
09/22/1982EP0060657A2 High electron mobility heterojunction semiconductor devices
09/22/1982EP0060635A2 A semiconductor integrated circuit device including a protection element
09/22/1982EP0060408A1 Electrically erasable programmable read only memory
09/21/1982US4350994 Semiconductor device having an amorphous metal layer contact
09/21/1982US4350991 Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance
09/21/1982US4350990 Having contacts of gold or platinum on the surface of a noble metal or indium
09/21/1982US4350902 Input stage for a monolithically integrated charge transfer device which generates two complementary charge packets
09/21/1982US4350743 Structure for multilayer circuits
09/21/1982US4350536 Method of producing dynamic random-access memory cells
09/21/1982CA1132259A1 Semiconductor device having a dual emitter transistor with accurate base resistor
09/21/1982CA1132146A1 Process for plant scale production of cement with mechanical compounding
09/16/1982WO1982003069A1 Amorphous semiconductor method and devices
09/15/1982EP0060026A1 Gain stage with operational amplifier and switched capacitor resistor equivalent circuit
09/15/1982EP0059878A1 Monolithic integrated voltage reference source
09/15/1982EP0059848A2 FET and method for manufacturing such
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