Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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09/17/1985 | US4542398 Semiconductor devices of multi-emitter type |
09/17/1985 | US4542397 Self aligning small scale integrated circuit semiconductor chips to form large area arrays |
09/17/1985 | US4542396 Trapped charge bidirectional power FET |
09/17/1985 | US4541166 Method of making semiconductor deivce using a conductive layer as mask |
09/17/1985 | CA1193758A1 Triple diffused short channel device structure |
09/17/1985 | CA1193757A1 Lateral junction field effect transistor device |
09/17/1985 | CA1193464A1 Semiconductor pressure transducer |
09/12/1985 | WO1985004049A1 Improved integrated circuit structure having intermediate metal silicide layer and method of making same |
09/12/1985 | WO1985004045A1 Thermally-activated, shorting diode switch having non-operationally-alternable junction path |
09/11/1985 | EP0154431A1 Integrated circuit chip assembly |
09/11/1985 | EP0154082A1 Gate turn-off thyristor |
09/10/1985 | US4541074 Semiconductor device for memory cell |
09/10/1985 | US4541002 Protective device for a semiconductor integrated circuit including double polysilicon resistor |
09/10/1985 | US4541001 Bidirectional power FET with substrate-referenced shield |
09/10/1985 | US4541000 Varactor or mixer diode with surrounding substrate metal contact and top surface isolation |
09/10/1985 | US4539742 Semiconductor device and method for manufacturing the same |
09/04/1985 | EP0153902A2 Power semiconductor device, particularly a thyristor and a gridistor, and process for its production |
09/04/1985 | EP0153889A2 Deprogramming insensitive eprom process |
09/04/1985 | EP0153860A2 Logic circuit |
09/04/1985 | EP0153774A1 ECL-compatible elementary gallium-arsenide transistor circuit |
09/04/1985 | EP0153686A2 Method for making transistor |
09/03/1985 | US4539660 Semiconductor integrated circuit |
09/03/1985 | US4539580 High density integrated circuit device with MOS transistor and semiconductor region having potential wells |
09/03/1985 | US4538343 Integrated circuits, nitride isolation, dipes, etching |
09/03/1985 | US4538342 Forming platinum contacts to in-based group III-V compound devices |
09/03/1985 | CA1192819A1 Method for grading the band gaps of amorphous alloys and devices |
09/03/1985 | CA1192818A1 Method for optimizing photoresponsive amorphous alloys and devices |
09/03/1985 | CA1192817A1 Method for increasing the band gap in photoresponsive amorphous alloys and devices |
09/03/1985 | CA1192816A1 Method for making photoresponsive amorphous germanium alloys and devices |
08/29/1985 | WO1985003807A1 Versatile generic chip substrate |
08/29/1985 | WO1985003806A1 Integrated circuit chip assembly |
08/29/1985 | WO1985003805A1 Monolithic wafer having interconnection system including programmable interconnection layer |
08/29/1985 | WO1985003798A1 Nonvolatile latch |
08/28/1985 | EP0153170A2 Phosphorus and high phosphorus polyphosphide barriers in quantum well devices |
08/28/1985 | EP0153028A2 A mirror wafer of compound semiconductor |
08/28/1985 | EP0152972A2 Contact system for 2-pole electronic chips, in particular for semi-conductor chips |
08/28/1985 | EP0152689A2 Memory device |
08/28/1985 | EP0152625A2 Method for fabricating a semiconductor device having a polycrystalline silicon-active region. |
08/28/1985 | EP0152624A2 Method of manufacturing a semiconductor device having a polycristalline silicon-active region. |
08/28/1985 | EP0152615A2 Semiconductor device and a method of manufacturing the same |
08/28/1985 | EP0025050B1 Dielectrically isolated high voltage semiconductor devices |
08/27/1985 | US4538287 Floating gate amplifier using conductive coupling for charge coupled devices |
08/27/1985 | US4538244 Semiconductor memory device |
08/27/1985 | US4538166 Semiconductor memory device |
08/27/1985 | US4538165 FET With heterojunction induced channel |
08/27/1985 | US4537654 Two-gate non-coplanar FET with self-aligned source |
08/27/1985 | US4536946 Method for fabricating semiconductor photodetector |
08/27/1985 | US4536945 Process for producing CMOS structures with Schottky bipolar transistors |
08/27/1985 | US4536944 Method of making ROM/PLA semiconductor device by late stage personalization |
08/27/1985 | US4536943 Method of manufacturing a FET |
08/27/1985 | US4536942 Fabrication of T-shaped metal lines for semiconductor devices |
08/27/1985 | CA1192669A1 Vertical igfet with internal gate and method of making same |
08/27/1985 | CA1192668A1 Semiconductor device and its fabrication method |
08/21/1985 | EP0152164A2 Provision of a sub-half-micron-size recess in a semiconductor substrate |
08/21/1985 | EP0152126A2 MESFET field-effect transistors for hyperfrequency applications and process for manufacturing such a transistor |
08/21/1985 | EP0152116A2 Lateral bipolar transistor and method of producing the same |
08/21/1985 | EP0151585A1 Shallow-junction semiconductor devices |
08/20/1985 | US4536858 Junction short-circuiting-type programmable read-only memory device |
08/20/1985 | US4536784 Semiconductor device having a junction capacitance, an integrated injection logic circuit and a transistor in a semiconductor body |
08/20/1985 | US4536782 Field effect semiconductor devices and method of making same |
08/20/1985 | US4536720 Programmable oscillator with power down feature and frequency adjustment |
08/20/1985 | US4536469 Masking segments of thermal conductive layer on support, and plating unmasked segments |
08/20/1985 | US4535531 Method and resulting structure for selective multiple base width transistor structures |
08/15/1985 | WO1985003599A1 Programmable read-only memory cell and method of fabrication |
08/15/1985 | WO1985003598A1 Integrated circuit having dislocation-free substrate |
08/15/1985 | WO1985003597A1 A bipolar transistor with active elements formed in slots |
08/14/1985 | EP0151476A2 A read only memory and a method of manufacturing the same |
08/14/1985 | EP0151354A2 Programmable read-only memory devices (PROM) |
08/14/1985 | EP0151350A1 Fabrication of stacked mos devices |
08/14/1985 | EP0151309A2 High Electron Mobility Field-Effect Transistor |
08/14/1985 | EP0151224A2 Short-channel thin-film field-effect transistor, and method of producing it |
08/13/1985 | US4535349 Floating single crystal electrode |
08/13/1985 | US4535251 A.C. Solid state relay circuit and structure |
08/13/1985 | US4534826 Trench etch process for dielectric isolation |
08/13/1985 | US4534623 Horizontally-stacked metal-insulator-metal element for electro-optical device and method for manufacture |
08/13/1985 | US4534622 Solid-state device having a plurality of optical functions |
08/13/1985 | US4534104 Mixed dielectric process and nonvolatile memory device fabricated thereby |
08/13/1985 | US4534103 Gallium arsenide |
08/13/1985 | CA1191974A1 Laser treatment of thyristor to provide overvoltage self-protection |
08/13/1985 | CA1191973A1 Process for making complementary transistors |
08/13/1985 | CA1191970A1 Stacked mos transistor |
08/13/1985 | CA1191969A1 Solid-state relay |
08/13/1985 | CA1191910A1 Low noise ccd output |
08/07/1985 | EP0151019A2 Gate turn-off thryistor |
08/07/1985 | EP0151004A2 Schottky barrier diodes |
08/07/1985 | EP0150827A2 Method of making silicon diaphragm pressure sensor |
08/07/1985 | EP0150728A2 Liquid crystal displays operated by amorphous silicon alloy diodes |
08/07/1985 | EP0150597A1 Method of manufacturing semiconductor memory device having trench memory capacitor |
08/07/1985 | EP0150582A1 Silicon gigabits per second metal-oxide-semiconductor device processing |
08/07/1985 | EP0150365A2 Semiconductor component with contact hole |
08/07/1985 | EP0150328A1 Trench-defined semiconductor structure |
08/07/1985 | EP0150307A2 Resistor structure for transistor having polysilicon base contacts |
08/06/1985 | US4534015 Information holding device |
08/06/1985 | US4533934 Device structures for high density integrated circuits |
08/06/1985 | US4533933 Schottky barrier infrared detector and process |
08/06/1985 | US4533932 Semiconductor device with enlarged corners to provide enhanced punch through protection |
08/06/1985 | US4532698 Method of making ultrashort FET using oblique angle metal deposition and ion implantation |
08/06/1985 | US4532697 Silicon gigabit metal-oxide-semiconductor device processing |
08/06/1985 | US4532696 Method of manufacturing a semiconductor device for forming a deep field region in a semiconductor substrate |
08/06/1985 | US4532695 Method of making self-aligned IGFET |