| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/03/2001 | US6255726 Vertical interconnect process for silicon segments with dielectric isolation |
| 07/03/2001 | US6255716 Bipolar junction transistors having base electrode extensions |
| 07/03/2001 | US6255710 3-D smart power IC |
| 07/03/2001 | US6255706 Thin film transistor and method of manufacturing same |
| 07/03/2001 | US6255705 Producing devices having both active matrix display circuits and peripheral circuits on a same substrate |
| 07/03/2001 | US6255704 Semiconductor device and method for fabricating the same |
| 07/03/2001 | US6255703 Device with lower LDD resistance |
| 07/03/2001 | US6255696 Retrograde ESD protection apparatus |
| 07/03/2001 | US6255695 TFT CMOS logic circuit having source/drain electrodes of differing spacing from the gate electrode for decreasing wiring capacitance and power consumption |
| 07/03/2001 | US6255694 Multi-function semiconductor structure and method |
| 07/03/2001 | US6255693 Ion implantation with programmable energy, angle, and beam current |
| 07/03/2001 | US6255692 Trench-gate semiconductor device |
| 07/03/2001 | US6255691 Nonvolatile semiconductor memory device and manufacturing process thereof |
| 07/03/2001 | US6255690 Non-volatile semiconductor memory device |
| 07/03/2001 | US6255689 Flash memory structure and method of manufacture |
| 07/03/2001 | US6255683 Dynamic random access memory |
| 07/03/2001 | US6255679 Field effect transistor which can operate stably in millimeter wave band |
| 07/03/2001 | US6255674 Silicon-germanium heterobipolar transistor with a step-wise graded base |
| 07/03/2001 | US6255673 Hetero-junction field effect transistor |
| 07/03/2001 | US6255668 Thin film transistor with inclined eletrode side surfaces |
| 07/03/2001 | US6255447 Oligomers or polymers which demonstrate fluorescence, high glass transition temperatures or liquid-crystalline properties; facilitate preparation of films having high heat resistance and solvent resistance |
| 07/03/2001 | US6255227 Etching process of CoSi2 layers |
| 07/03/2001 | US6255219 Method for fabricating high-performance submicron MOSFET with lateral asymmetric channel |
| 07/03/2001 | US6255206 Method of forming gate electrode with titanium polycide structure |
| 07/03/2001 | US6255204 Method for forming a semiconductor device |
| 07/03/2001 | US6255203 Technique for low-temperature formation of excellent silicided α-Si gate structures |
| 07/03/2001 | US6255202 Damascene T-gate using a spacer flow |
| 07/03/2001 | US6255201 Method and device for activating semiconductor impurities |
| 07/03/2001 | US6255199 Method of producing polycrystalline silicon |
| 07/03/2001 | US6255198 Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| 07/03/2001 | US6255196 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 07/03/2001 | US6255195 Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
| 07/03/2001 | US6255190 Method for dielectrically isolated deep pn-junctions in silicon substrates using deep trench sidewall predeposition technology |
| 07/03/2001 | US6255187 Method of fabricating self-aligning stacked capacitor using electroplating method |
| 07/03/2001 | US6255184 Fabrication process for a three dimensional trench emitter bipolar transistor |
| 07/03/2001 | US6255183 Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers |
| 07/03/2001 | US6255181 Method for fabricating MOS semiconductor device having salicide region and LDD structure |
| 07/03/2001 | US6255178 Method for forming transistors with raised source and drains and device formed thereby |
| 07/03/2001 | US6255175 Fabrication of a field effect transistor with minimized parasitic Miller capacitance |
| 07/03/2001 | US6255174 Mos transistor with dual pocket implant |
| 07/03/2001 | US6255171 Method of making dense SOI flash memory array structure |
| 07/03/2001 | US6255166 Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
| 07/03/2001 | US6255165 Nitride plug to reduce gate edge lifting |
| 07/03/2001 | US6255154 Semiconductor device and method of manufacturing the same |
| 07/03/2001 | US6255150 Use of crystalline SiOx barriers for Si-based resonant tunneling diodes |
| 07/03/2001 | US6255149 Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate |
| 07/03/2001 | US6255148 Polycrystal thin film forming method and forming system |
| 07/03/2001 | US6255146 Thin film transistor and a method of manufacturing thereof |
| 07/03/2001 | US6255145 Process for manufacturing patterned silicon-on-insulator layers with self-aligned trenches and resulting product |
| 07/03/2001 | US6255131 Liquid crystal display device |
| 07/03/2001 | US6255130 Thin film transistor array panel and a method for manufacturing the same |
| 07/03/2001 | US6255121 Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor |
| 07/03/2001 | US6254827 Placing chip adjacent to substrate; forming electrically conductive interconnects, interconnecting electrically conductive traces on first surface of chip with traces on substrate; light exposure; applying wickable sealent; curing |
| 07/03/2001 | US6254676 Method for manufacturing metal oxide semiconductor transistor having raised source/drain |
| 06/28/2001 | WO2001047045A1 Solution processing |
| 06/28/2001 | WO2001047044A2 Forming interconnects |
| 06/28/2001 | WO2001047043A1 Solution processed devices |
| 06/28/2001 | WO2001047030A1 Depletion type mos transistor |
| 06/28/2001 | WO2001047029A1 Horizontal junction field-effect transistor |
| 06/28/2001 | WO2001047028A1 Production of single-pole components |
| 06/28/2001 | WO2001047027A1 Semiconductor device |
| 06/28/2001 | WO2001047026A1 Silicon carbide lmosfet with gate break-down protection |
| 06/28/2001 | WO2001047025A1 Silicon carbide lateral mosfet and method of making the same |
| 06/28/2001 | WO2001047024A1 Silicon carbide n-channel power lmosfet |
| 06/28/2001 | WO2001047023A1 High voltage semiconductor |
| 06/28/2001 | WO2001047012A1 Non-volatile memory cells and periphery |
| 06/28/2001 | WO2001047006A1 Tunnel nitride for improved polysilicon emitter |
| 06/28/2001 | WO2001046989A2 Decoupling capacitors for thin gate oxides |
| 06/28/2001 | WO2001046987A2 Inkjet-fabricated integrated circuits |
| 06/28/2001 | WO2001046664A2 Method for producing micromechanical structures |
| 06/28/2001 | WO2001045864A1 Low temperature process for high density thin film integrated capacitors, and amorphously frustrated ferroelectric materials therefor |
| 06/28/2001 | WO2001045501A2 GROWTH OF ULTRATHIN NITRIDE ON Si(100) BY RAPID THERMAL N2 TREATMENT |
| 06/28/2001 | WO2001004949A9 Nand type flash memory device |
| 06/28/2001 | WO2000079570A3 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 06/28/2001 | US20010005622 Method for manufacturing gate electrode with vertical side profile |
| 06/28/2001 | US20010005620 Process for manufacturing semiconductor device |
| 06/28/2001 | US20010005618 Using epitaxial growth technique to construct lines of required fineness |
| 06/28/2001 | US20010005616 Method for fabricating semiconductor device |
| 06/28/2001 | US20010005613 Semiconductor device and method of fabricating the same |
| 06/28/2001 | US20010005610 Semiconductor device having metal silicide film and manufacturing method thereof |
| 06/28/2001 | US20010005608 Method for semiconductor manufacturing |
| 06/28/2001 | US20010005606 Laser irradiation apparatus and method of fabricating a semiconductor device |
| 06/28/2001 | US20010005605 High-temperature heat treatment of the oxidized film to drive out contamination acquired from the doped layer beneath to improve the quality of the oxidized film such as durability against a high voltage |
| 06/28/2001 | US20010005598 Method of manufacturing an active matrix device |
| 06/28/2001 | US20010005596 Method for manufacturing thin film transistor liquid crystal display |
| 06/28/2001 | US20010005333 Non-volatile memory structure and corresponding manufacturing process |
| 06/28/2001 | US20010005332 Non- volatile semiconductor memory device and method of forming the same |
| 06/28/2001 | US20010005330 Nand-type flash memory device and method of operating the same |
| 06/28/2001 | US20010005328 Non-volatile semiconductor memory device |
| 06/28/2001 | US20010005302 Clipping device with a negative resistance |
| 06/28/2001 | US20010005245 Color liquid crystal display and method of manufacturing color liquid crystal display |
| 06/28/2001 | US20010005227 Solid-state imaging device |
| 06/28/2001 | US20010005194 Semiconductor device and driving method thereof |
| 06/28/2001 | US20010005036 Power semiconductor component for high reverse voltages |
| 06/28/2001 | US20010005035 Bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity and process of fabrication thereof |
| 06/28/2001 | US20010005032 Method for producing a filled recess in a material layer, and an integrated circuit configuration produced by the method |
| 06/28/2001 | US20010005031 Power semiconductor device |
| 06/28/2001 | US20010005030 Semiconductor device and fabrication method |
| 06/28/2001 | US20010005029 Semiconductor device lacking steeply rising structures and fabrication method of the same |
| 06/28/2001 | US20010005026 Conductive thin film, a capacitor using the same and a method of manufacturing. |