Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2001
08/07/2001US6271132 Self-aligned source and drain extensions fabricated in a damascene contact and gate process
08/07/2001US6271103 Solid state image sensor and method for fabricating the same
08/07/2001US6271102 Method and system for dicing wafers, and semiconductor structures incorporating the products thereof
08/07/2001US6271101 Process for production of SOI substrate and process for production of semiconductor device
08/07/2001US6271098 Multilayer intermetallic
08/07/2001US6271097 Method of fabricating a low base-resistance bipolar transistor
08/07/2001US6271096 Method and device for improved salicide resistance on polysilicon gates
08/07/2001US6271094 Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
08/07/2001US6271093 Methods for reducing anomalous narrow channel effect in trench-bounded buried-channel p-MOSFETs
08/07/2001US6271091 Method of fabricating flash memory cell
08/07/2001US6271090 Method for manufacturing flash memory device with dual floating gates and two bits per cell
08/07/2001US6271089 Method of manufacturing flash memory
08/07/2001US6271088 Method for fabricating a buried vertical split gate memory device with high coupling ratio
08/07/2001US6271069 Transistor
08/07/2001US6271066 Semiconductor material and method for forming the same and thin film transistor
08/07/2001US6271065 Method directed to the manufacture of an SOI device
08/07/2001US6271064 Thin film transistor and method of manufacturing the same
08/07/2001US6271063 Method of making an SRAM cell and structure
08/07/2001US6271062 Thin film semiconductor device including a semiconductor film with high field-effect mobility
08/07/2001US6271061 Fabrication of insulated gate bipolar devices
08/07/2001US6271060 Process of fabricating a chip scale surface mount package for semiconductor device
08/07/2001US6270944 Thermal transfer element for forming multilayers devices
08/07/2001US6270685 Method for producing a semiconductor
08/07/2001US6270619 Treatment device, laser annealing device, manufacturing apparatus, and manufacturing apparatus for flat display device
08/07/2001US6270573 Growing silicon carbide thin film via molecular beam epitaxy (mbe) on hexagonal crystal using an off-cut inclined surface prevents occurrence of twin; substrate crystal layers each have different stacked crystal systems; semiconductors
08/02/2001WO2001056087A1 Memory cell structure integrated on semiconductor
08/02/2001WO2001056080A1 Method and laminate for fabricating an integrated circuit
08/02/2001WO2001056075A1 Nitridation barriers for nitridated tunnel oxide for circuitry for flash memory technology and for locos/sti isolation
08/02/2001WO2001056065A2 Unreactive gas anneal and low temperature pretreatment of layered superlattice materials
08/02/2001WO2001055675A1 Angular rate sensor
08/02/2001WO2001018870A3 Charge compensating semiconductor device and method for the production thereof
08/02/2001WO2001018869A3 Semiconductor element for high blocking voltages during a simultaneously low closing resistance and method for the production thereof
08/02/2001WO2000060644A3 A method of manufacturing a trench gated vdmos
08/02/2001WO2000058999B1 Semiconductor structures having a strain compensated layer and method of fabrication
08/02/2001US20010010976 Method and system for reducing ARC layer removal bamd providing a capping layer for the ARC layer
08/02/2001US20010010975 Feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer
08/02/2001US20010010967 Method for supressing boron penetrating gate dielectric layer by pulsed nitrogen plasma doping
08/02/2001US20010010966 Semiconductor device and method of manufacturing the same
08/02/2001US20010010963 Said dicing line is aligned with said pre-existing defect extending from said notch, prior to cutting the wafer, such that the dicing line overlaps the defect.
08/02/2001US20010010962 Method of fabricating field effect transistor
08/02/2001US20010010961 Method of forming contact holes of semiconductor device
08/02/2001US20010010960 Floating gate method and device
08/02/2001US20010010954 Method of forming an ESD protection device
08/02/2001US20010010953 Thin film transistor and method of fabricating the same
08/02/2001US20010010942 Solid state image sensor device and method of fabricating the same
08/02/2001US20010010743 Passive alignment using slanted wall pedestal
08/02/2001US20010010649 Novel flash memory using micro vacuum tube technology
08/02/2001US20010010646 Nonvolatile semiconductor memory device
08/02/2001US20010010573 Liquid crystal dispaly device
08/02/2001US20010010572 Vertical alignment liquid crystal display device having planarized substrate surface
08/02/2001US20010010567 Thin film transistor substrates for liquid crystal displays including passivation layer
08/02/2001US20010010566 Active matrix substrate, method for fabricating the substrate and liquid crystal display device
08/02/2001US20010010391 Semiconductor device and its manufacturing method
08/02/2001US20010010389 Homojunction semiconductor devices with low barrier tunnel oxide contacts
08/02/2001US20010010388 Bipolar transistor and method of fabricating the same
08/02/2001US20010010385 Trenched schottky rectifiers
08/02/2001US20010010384 Semiconductor device
08/02/2001US20010010383 Semiconductor device
08/02/2001US20010010382 Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
08/02/2001US20010010381 Semiconductor device and method of fabricating the same
08/02/2001US20010010380 Field-effect transistor and manufacture thereof
08/02/2001US20010010379 MOS type semiconductor apparatus
08/02/2001US20010010377 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricting same
08/02/2001US20010010370 Active matrix substrate plate and manufacturing method therefor
08/02/2001EP1145436A3 A method of manufacturing a trench gated vdmos
08/02/2001DE10003951A1 Tunneldiode und Verfahren zu ihrer Herstellung Tunnel diode and methods for their preparation
08/02/2001DE10002364A1 Silizium-Germanium-Bipolartranistor mit optimiertem Germaniumprofil Silicon-germanium-germanium Bipolartranistor with optimized profile
08/02/2001DE10002129A1 Vertikale DMOS-Transistoranordnung mit niedrigem Einschaltwiderstand Vertical DMOS transistor structure with low on-resistance
08/02/2001DE10001871A1 Process for the production of a controllable semiconductor logic element
08/02/2001DE10001868A1 Avalanchefester Randabschluß für planares Halbleiterleistungsbauelement Avalanche Solid edge termination for planar semiconductor power device
08/02/2001CA2398134A1 Angular rate sensor
08/01/2001EP1120836A1 Memory cell structure integrated on semiconductor
08/01/2001EP1120835A2 MOSFET and method of manufacturing the same
08/01/2001EP1120834A2 Insulated gate semiconductor device and manufacturing method thereof
08/01/2001EP1120821A2 Process for formation of cap layer for semiconductor
08/01/2001EP1120791A1 Semiconductor device
08/01/2001EP1120483A2 Method for etching GaN material
08/01/2001EP1120469A2 Method for actively transporting DNA
08/01/2001EP1120157A2 Self-addressable electronic device
08/01/2001EP1120156A2 Method of electronically controlled hybridization of DNA
08/01/2001EP1120155A2 Method for combinatorial synthesis of a biopolymer
08/01/2001EP1119876A2 Switching transistor with reduced switching losses
08/01/2001EP1119875A1 Semiconductor device with a non-volatile memory
08/01/2001EP1119872A1 Method of making a charge compensation semiconductor device using neutron transmutation
08/01/2001EP1119871A1 Method of making a charge compensation semiconductor device using direct bonding and corresponding device
08/01/2001EP0868742B1 Process for producing an mos transistor
08/01/2001CN1306677A Semiconductor device with transistor gate insulator
08/01/2001CN1306311A Field effect transistor
08/01/2001CN1306310A Transistor of composite perovskite structure oxide membrane
08/01/2001CN1306309A 钛酸钡晶体管 Barium titanate transistor
08/01/2001CN1306308A 钛酸锶晶体管 Strontium titanate transistor
08/01/2001CN1306301A Prodn tech of semiconductor device and its conductive structure
08/01/2001CN1305944A Air tight method for packing micro system in-situ
08/01/2001CN1069134C Gas sensor for detecting nitrogen dioxide and its prodn. tech
07/2001
07/31/2001US6268898 Liquid crystal display device and method of manufacturing the same
07/31/2001US6268894 LCD having capacitor lines with particular structures
07/31/2001US6268779 Integrated oscillators and tuning circuits
07/31/2001US6268648 Board for mounting semiconductor element, method for manufacturing the same, and semiconductor device
07/31/2001US6268640 Forming steep lateral doping distribution at source/drain junctions
07/31/2001US6268636 Operation and biasing for single device equivalent to CMOS