| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/24/2001 | US6265747 Semiconductor device having OHMIC connection that utilizes peak impurity concentration region |
| 07/24/2001 | US6265746 Highly resistive interconnects |
| 07/24/2001 | US6265745 Method for producing insulated gate thin film semiconductor device |
| 07/24/2001 | US6265744 Semiconductor device having a trench structure and method for manufacturing the same |
| 07/24/2001 | US6265741 Trench capacitor with epi buried layer |
| 07/24/2001 | US6265739 Non-volatile semiconductor memory device and its manufacturing method |
| 07/24/2001 | US6265738 Thin film ferroelectric capacitors having improved memory retention through the use of essentially smooth bottom electrode structures |
| 07/24/2001 | US6265735 Semiconductor device and manufacturing method thereof |
| 07/24/2001 | US6265731 Ohmic contacts for p-type wide bandgap II-VI semiconductor materials |
| 07/24/2001 | US6265730 Thin-film transistor and method of producing the same |
| 07/24/2001 | US6265728 Compound semiconductor device and method for controlling characteristics of the same |
| 07/24/2001 | US6265727 Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions |
| 07/24/2001 | US6265329 Quantum deposition distribution control |
| 07/24/2001 | US6265327 Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method |
| 07/24/2001 | US6265293 CMOS transistors fabricated in optimized RTA scheme |
| 07/24/2001 | US6265290 Method for fabricating a thin film transistor and a substrate and thin film transistor manufactured using the same |
| 07/24/2001 | US6265279 Method for fabricating a trench capacitor |
| 07/24/2001 | US6265277 Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges |
| 07/24/2001 | US6265276 Structure and fabrication of bipolar transistor |
| 07/24/2001 | US6265275 Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base |
| 07/24/2001 | US6265269 Method for fabricating a concave bottom oxide in a trench |
| 07/24/2001 | US6265268 High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device |
| 07/24/2001 | US6265265 Flash memory cell and fabricating method thereof |
| 07/24/2001 | US6265259 Method to fabricate deep sub-μm CMOSFETs |
| 07/24/2001 | US6265249 Method of manufacturing thin film transistors |
| 07/24/2001 | US6265247 Thin-film transistor and manufacturing method for improved contact hole |
| 07/24/2001 | US6265243 Process for fabricating organic circuits |
| 07/24/2001 | US6265238 Electrostatic capacitive sensor and method for manufacturing the same |
| 07/24/2001 | US6265234 Alignment system for a spherical device |
| 07/24/2001 | US6264167 Semiconductor device |
| 07/24/2001 | CA2055665C Field effect transistor |
| 07/19/2001 | WO2001052398A1 Charge pump circuit |
| 07/19/2001 | WO2001052326A1 Virtual-ground, split-gate flash memory cell arrangements |
| 07/19/2001 | WO2001052314A1 Drive transistor with folded gate |
| 07/19/2001 | WO2001052313A1 Top gate thin-film transistor and method of producing the same |
| 07/19/2001 | WO2001052306A2 Trench insulated-gate bipolar transistor with improved safe-operating-area |
| 07/19/2001 | WO2001052271A1 Dielectric material and process for producing the same, and semiconductor device made therewith and process for producing the same |
| 07/19/2001 | WO2001051931A2 Accelerometer |
| 07/19/2001 | WO2001006542A3 Method for producing a vertical semiconductor transistor component element and a vertical semiconductor transistor component |
| 07/19/2001 | WO2000072360A3 Junction insulated lateral mosfet for high/low side switches |
| 07/19/2001 | WO2000070654A3 Low-resistance vdmos semiconductor component |
| 07/19/2001 | WO2000044031A3 Power transistor arrangement exhibiting a high level of electric strength |
| 07/19/2001 | WO2000033354A9 High-efficiency heterostructure thermionic coolers |
| 07/19/2001 | US20010008799 Forming a stacked semiconductor layer and conductive layer, after forming second conductive layer, by using the same mask providing separation between drain and source electrodes of transistor and connecting pixel electrode to source |
| 07/19/2001 | US20010008796 Phosphorus atom containing gas such as phosphine is added to the reactive gas to carry out tungsten silicide deposition; enhanced yields without forming voids in the electrode and/or wiring |
| 07/19/2001 | US20010008791 High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| 07/19/2001 | US20010008788 Double diffused Metal on Semiconductor (DMOS); steps of trench formation completed prior to removal of the patterned trench mask so dopant does not leach out of the p-body since the mask serves as barrier, preventing leakage current |
| 07/19/2001 | US20010008786 NOR type; floating gates and a common source line, and drains; a region overlapping one of the drains and one of the floating gates in a memory cell is larger than a region overlapping the common source and one of the floating gates |
| 07/19/2001 | US20010008781 Thin film transistor (TFT); forming polycrystalline silicon and having an off-set area or a lightly doped drain (LDD) structure |
| 07/19/2001 | US20010008434 Liquid crystal display and method of manufacture |
| 07/19/2001 | US20010008302 Semiconductor device |
| 07/19/2001 | US20010008298 Semiconductor device and method of manufacturing same |
| 07/19/2001 | US20010008295 Semiconductor device and manufacturing method thereof |
| 07/19/2001 | US20010008294 MOS transistor and fabrication method thereof |
| 07/19/2001 | US20010008293 MIS transistor and manufacturing method thereof |
| 07/19/2001 | US20010008291 Semiconductor device and method for manufacturing the same |
| 07/19/2001 | US20010008288 Semiconductor integrated circuit device having memory cells |
| 07/19/2001 | US20010008284 Silicon-germanium BiCMOS on SOI |
| 07/19/2001 | DE10101900A1 Semiconductor component used in integrated circuits comprises zones of various conductivity types, an insulating film, a gate electrode and main electrodes |
| 07/19/2001 | DE10101568A1 Semiconductor device used as a transistor of the trench-gate type comprises a semiconductor substrate with a trench formed in the main surface and an insulating film arranged on an inner wall of the trench |
| 07/19/2001 | DE10100194A1 Semiconductor-on-insulator field effect transistor comprises a silicon-germanium layer between an electrically insulating layer and a silicon active layer |
| 07/19/2001 | DE10060584A1 Bipolar transistor comprises used for high frequency operations a silicon layer, a silicon epitaxial layer of first type, a silicon-germanium epitaxial layer and a silicon epitaxial layer of second type |
| 07/19/2001 | DE10046945A1 Production of a non-volatile storage device comprises forming trench insulations on a substrate, forming source and drain regions between neighboring insulations |
| 07/19/2001 | DE10009345C1 Field effect transistor device with trench-shaped gate electrode |
| 07/19/2001 | CA2397089A1 Accelerometer |
| 07/18/2001 | EP1116279A1 Semiconductor device |
| 07/18/2001 | EP1116278A1 Bipolar transistor and method for producing same |
| 07/18/2001 | EP1116277A1 Connection arrangement for a semiconductor device and method of manufacturing same |
| 07/18/2001 | EP1116276A1 Semiconductor element with field-forming areas |
| 07/18/2001 | EP1116275A1 Non-volatile semiconductor memory device |
| 07/18/2001 | EP1116274A1 Electronic switching device with at least two semiconductor components |
| 07/18/2001 | EP1116273A1 Semiconductor device comprising a high-voltage circuit element |
| 07/18/2001 | EP1116270A1 Integrated circuit comprising vertical transistors, and a method for the production thereof |
| 07/18/2001 | EP1116269A1 Complementary bipolar/cmos epitaxial structure and process |
| 07/18/2001 | EP1116267A1 Process for making high perf0rmance mosfet with an inverted t-shaped gate electrode |
| 07/18/2001 | EP1116264A1 Device and method for etching spacers formed upon an integrated circuit gate conductor |
| 07/18/2001 | EP1116263A2 Method for producing an ohmic contact |
| 07/18/2001 | EP1116256A1 Vacuum field-effect device and fabrication process therefor |
| 07/18/2001 | EP1116236A1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
| 07/18/2001 | EP1116038A1 Formation of a bridge in a micro-device |
| 07/18/2001 | EP1116008A2 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer |
| 07/18/2001 | EP1115921A2 Method for producing an amorphous or polycrystalline layer on an insulating region |
| 07/18/2001 | EP1115649A1 Micromechanical component with sealed membrane openings |
| 07/18/2001 | EP0805985B1 Micromechanical component |
| 07/18/2001 | CN1304551A Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusions |
| 07/18/2001 | CN1304547A Method for producing thin film semiconductor device |
| 07/18/2001 | CN1304546A Method of fabricating silicon carbide power device by controlled annealing |
| 07/18/2001 | CN1304181A Transistor in nanometer channel and its integrated circuit |
| 07/18/2001 | CN1304180A Power semiconductor device |
| 07/18/2001 | CN1304179A Nonvolatile semiconductor storage device |
| 07/18/2001 | CN1304169A Method of forming silicon-germanium base zone of heterojunction bipolar transistor |
| 07/18/2001 | CN1304055A Film transistor array panel for liquid crystal display device |
| 07/17/2001 | US6262926 Nonvolatile semiconductor memory device |
| 07/17/2001 | US6262917 Structure of a flash memory device |
| 07/17/2001 | US6262589 TFT array inspection method and device |
| 07/17/2001 | US6262472 Bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
| 07/17/2001 | US6262470 Trench-type insulated gate bipolar transistor and method for making the same |
| 07/17/2001 | US6262469 Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor |
| 07/17/2001 | US6262466 Lateral semiconductor structure for forming a temperature-compensated voltage limitation |
| 07/17/2001 | US6262462 Enhanced dielectric constant gate insulator |