| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/30/2001 | US20010018245 Method for manufacturing semiconductor devices |
| 08/30/2001 | US20010018243 Method for fabricating a semiconductor device |
| 08/30/2001 | US20010018241 Transistor and method for fabricating the same |
| 08/30/2001 | US20010018240 Method of fabricating thin film transistor |
| 08/30/2001 | US20010018238 Method of fabricating an array substrate |
| 08/30/2001 | US20010018227 Process for producing a semiconductor device |
| 08/30/2001 | US20010018224 Semiconductor device and manufacturing method thereof |
| 08/30/2001 | US20010018221 Method of manufacturing ferroelectric memory device |
| 08/30/2001 | US20010017807 Semiconductor memory device allowing static-charge tolerance test between bit lines |
| 08/30/2001 | US20010017798 Semiconductor integrated circuit device and data processor device |
| 08/30/2001 | US20010017789 Nonvolatile semiconductor memory device having a data reprogram mode |
| 08/30/2001 | US20010017786 Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
| 08/30/2001 | US20010017683 Electro-optical device |
| 08/30/2001 | US20010017417 Semiconductor device with a condductive metal layer engaging not less than fifty percent of a source\drain region |
| 08/30/2001 | US20010017400 Semiconductor device |
| 08/30/2001 | US20010017399 Bipolar transistor and manufacturing method thereof |
| 08/30/2001 | US20010017396 High resistance integrated circuit resistor |
| 08/30/2001 | US20010017393 Diode and method for manufacturing the same |
| 08/30/2001 | US20010017392 Vertical transport MOSFETs and method for making the same |
| 08/30/2001 | US20010017391 Method of fabricating semiconductor device |
| 08/30/2001 | US20010017390 Non-uniform gate/dielectric field effect transistor |
| 08/30/2001 | US20010017389 Semiconductor device and method of manufacturing such a device |
| 08/30/2001 | US20010017388 Semiconductor device and method of manufacturing same |
| 08/30/2001 | US20010017387 Method of fabricating buried source to shrink chip size in memory array |
| 08/30/2001 | US20010017386 Memory configuration and method for reading a state from and storing a state in a ferroelectric transistor |
| 08/30/2001 | US20010017385 Semiconductor device |
| 08/30/2001 | US20010017382 Optimized low leakage diodes, including photodiodes |
| 08/30/2001 | US20010017379 High voltage transistor using P+ buried layer |
| 08/30/2001 | US20010017378 Semiconductor device |
| 08/30/2001 | US20010017377 Chip-type semiconductor device |
| 08/30/2001 | US20010017374 Semi-insulating silicon carbide without vanadium domination |
| 08/30/2001 | US20010017371 Display device such as electro-optic element and thin film transistor and display device manufacturing method |
| 08/30/2001 | US20010017370 Nitride based transistors on semi-insulating silicon carbide substrates |
| 08/30/2001 | US20010017265 Molecular recognition type chemical CCD |
| 08/30/2001 | DE10008545A1 Monolithic integrated semiconducting component has first region with additional contact to higher concentration region so Ohmic contact exists and is connected to Schottky diode(s) |
| 08/29/2001 | EP1128443A1 Field-effect semiconductor device |
| 08/29/2001 | EP1128442A2 Lateral thyristor structure for protection against electrostatic discharge |
| 08/29/2001 | EP1128441A2 Semiconductor devices comprising a SOI bipolar transistor and corresponding manufacturing methods |
| 08/29/2001 | EP1128440A2 Semiconductor junction profile and method for the production thereof |
| 08/29/2001 | EP1128439A2 Active matrix display device |
| 08/29/2001 | EP1128430A2 Semiconductor device and method of manufacturing the same |
| 08/29/2001 | EP1128427A2 Manufacturing semiconductor devices |
| 08/29/2001 | EP1128389A1 Write/Sense amplifier with vertical transistors for DRAM |
| 08/29/2001 | EP1128356A2 Precharge circuit and image display device using the same |
| 08/29/2001 | EP1128174A2 Capacitance-type pressure sensor and its manufacture |
| 08/29/2001 | EP1128173A2 Capacitive semiconductor pressure sensor |
| 08/29/2001 | EP1127379A1 Vertically structured semiconductor power module |
| 08/29/2001 | EP1127378A1 Ferroelectric thin films of reduced tetragonality |
| 08/29/2001 | EP1127371A1 Method of oxidizing a substrate in the presence of nitride and oxynitride films |
| 08/29/2001 | EP1127368A2 Method for forming silicide regions on an integrated device |
| 08/29/2001 | EP0694086B1 Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits |
| 08/29/2001 | CN1310883A Mask configurable smart power circuit-applications and GS-NMOS devices |
| 08/29/2001 | CN1310863A Independently programmable memory segments in isolated N-wells within A PMOS EEPROM array and method therefor |
| 08/29/2001 | CN1310861A Semiconductor thin film and thin film device |
| 08/29/2001 | CN1310846A Electrically erasable nonvolatile memory |
| 08/29/2001 | CN1310479A Semi-conductor device |
| 08/29/2001 | CN1310474A Large power semiconductor assembly capable of relieving mechanical stress |
| 08/29/2001 | CN1310452A Code addressing storage cell for flash memory device |
| 08/28/2001 | US6282123 Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell |
| 08/28/2001 | US6281954 Liquid crystal display device and method for manufacturing the same |
| 08/28/2001 | US6281865 Driving circuit of liquid crystal display device |
| 08/28/2001 | US6281756 Transistor with internal matching circuit |
| 08/28/2001 | US6281593 SOI MOSFET body contact and method of fabrication |
| 08/28/2001 | US6281591 Semiconductor apparatus and semiconductor apparatus manufacturing method |
| 08/28/2001 | US6281569 Pressure-contact semiconductor device |
| 08/28/2001 | US6281565 Semiconductor device and method for producing the same |
| 08/28/2001 | US6281559 Gate stack structure for variable threshold voltage |
| 08/28/2001 | US6281556 Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate and the resulting device |
| 08/28/2001 | US6281553 Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method |
| 08/28/2001 | US6281552 Thin film transistors having ldd regions |
| 08/28/2001 | US6281549 MOSFET component |
| 08/28/2001 | US6281548 Power semiconductor device using semi-insulating polycrystalline silicon |
| 08/28/2001 | US6281547 Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask |
| 08/28/2001 | US6281546 Insulated gate field effect transistor and manufacturing method of the same |
| 08/28/2001 | US6281545 Multi-level, split-gate, flash memory cell |
| 08/28/2001 | US6281539 Structure and process for 6F2 DT cell having vertical MOSFET and large storage capacitance |
| 08/28/2001 | US6281537 Ferroelectric memory device guaranteeing electrical interconnection between lower capacitor electrode and contact plug and method for fabricating the same |
| 08/28/2001 | US6281536 Ferroelectric memory device with improved ferroelectric capacity characteristic |
| 08/28/2001 | US6281535 Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell |
| 08/28/2001 | US6281532 Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
| 08/28/2001 | US6281530 LPNP utilizing base ballast resistor |
| 08/28/2001 | US6281528 Ohmic contact improvement between layer of a semiconductor device |
| 08/28/2001 | US6281521 Silicon carbide horizontal channel buffered gate semiconductor devices |
| 08/28/2001 | US6281520 Gate insulated field effect transistors and method of manufacturing the same |
| 08/28/2001 | US6281519 Quantum semiconductor memory device including quantum dots |
| 08/28/2001 | US6281470 Thin film semiconductor device uniforming characteristics of semiconductor elements and manufacturing method thereof |
| 08/28/2001 | US6281141 Process for forming thin dielectric layers in semiconductor devices |
| 08/28/2001 | US6281138 System and method for forming a uniform thin gate oxide layer |
| 08/28/2001 | US6281119 Method for making contact with a semiconductor layer and semiconductor structure having a plurality of layers |
| 08/28/2001 | US6281100 Semiconductor processing methods |
| 08/28/2001 | US6281097 Self-aligned selectively grown sige base (sssb) bipolar transistor including an epitaxial layer made of sige alloy as a base layer. |
| 08/28/2001 | US6281095 Process of manufacturing silicon-on-insulator chip having an isolation barrier for reliability |
| 08/28/2001 | US6281086 Semiconductor device having a low resistance gate conductor and method of fabrication the same |
| 08/28/2001 | US6281085 Method of manufacturing a semiconductor device |
| 08/28/2001 | US6281083 Methods of forming field effect transistor gates, and methods of forming integrated circuitry |
| 08/28/2001 | US6281079 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and production process |
| 08/28/2001 | US6281076 Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region |
| 08/28/2001 | US6281075 Method of controlling of floating gate oxide growth by use of an oxygen barrier |
| 08/28/2001 | US6281064 Method for providing dual work function doping and protective insulating cap |
| 08/28/2001 | US6281062 MOS semiconductor device with self-aligned punchthrough stops and method of fabrication |