Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2001
08/16/2001US20010013610 Vertical bipolar transistor based on gate induced drain leakage current
08/16/2001US20010013608 Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device
08/16/2001US20010013607 Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
08/16/2001US20010013604 Compound semiconductor device and process for fabricating the same
08/16/2001US20010013600 Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof
08/16/2001EP1145323A3 An electronic device comprising a trench gate field effect device
08/16/2001EP1124262A2 Multilayer dielectric stack and method
08/16/2001EP1124260A2 Semiconductor device with reverse conducting faculty
08/16/2001EP1123566A1 Improvements in impatt diodes
08/16/2001EP1123492A1 Circuit configuration for compensating the temperature non-linearity of the characteristic curves of the piezoresistive measuring resistors connected in a bridge circuit
08/16/2001EP0946985B1 Memory cell arrangement and process for manufacturing the same
08/16/2001EP0892991B1 Semiconductor component with adjustable current amplification based on avalanche breakdown controlled by tunnel current
08/16/2001EP0852066B1 Process for generating the source regions of a flash-eeprom storage cell field
08/16/2001DE10106006A1 SJ-Halbleiterbauelement und Verfahren zu dessen Herstellung SJ-semiconductor device and process for its preparation
08/16/2001DE10104274A1 Contact structure used for e.g. MOSFETs, IGBTs and thyristors has a thin conducting separating layer applied to the exposed surfaces of the side wall spacer elements, and a relatively thick aluminum layer
08/16/2001DE10006035A1 Micro-mechanical component production, used as sensor element or actuator element, comprises providing functional element and/or functional layer with protective layer
08/16/2001DE10005564A1 Verfahren zur Herstellung definierter polykristalliner Silizium-Bereiche in einer amorphen Siliziumschicht A process for preparing polycrystalline silicon of defined regions in an amorphous silicon layer
08/16/2001DE10005442A1 Bipolartransistor Bipolar transistor
08/16/2001DE10004984A1 Vertikales Halbleiterbauelement mit Source-Down-Design und entsprechendes Herstellungsverfahren Vertical semiconductor device having source-down design and method of manufacture
08/16/2001DE10004392A1 Feldeffekttransistor und Verfahren zum Herstellen eines mit Ladungsträgern injizierten Feldeffekttransistors Field effect transistor and method for manufacturing an injected charge carriers with the field effect transistor
08/16/2001CA2400513A1 Semiconductor devices
08/16/2001CA2399394A1 A process for forming a semiconductor structure
08/16/2001CA2399031A1 Passive alignment using slanted wall pedestal
08/15/2001CN2443492Y Nano-size silicon schottky diode
08/15/2001CN1308774A Silicon carbide horizontal channel buffered gate semiconductor devices
08/15/2001CN1308772A ULSI MOS with high dielectric constant insulator
08/15/2001CN1308751A Semiconductor device having passivation
08/15/2001CN1308378A Buried metal contact structure and manufacture of semiconductor FET device
08/15/2001CN1308311A Semiconductor device and its drive method
08/14/2001US6275419 Multi-state memory
08/14/2001US6275414 Uniform bitline strapping of a non-volatile memory cell
08/14/2001US6275275 Thin film transistor and fabricating method thereof an insulating layer having a pattern not being in contact with source or drain electrode
08/14/2001US6275273 Active matrix liquid crystal display device having a black matrix and protective film in self alignment
08/14/2001US6275137 Semiconductor piezoresistor
08/14/2001US6274933 Integrated circuit device having a planar interlevel dielectric layer
08/14/2001US6274921 Semiconductor integrated circuit including protective transistor protecting another transistor during processing
08/14/2001US6274918 Integrated circuit diode, and method for fabricating same
08/14/2001US6274915 Method of improving MOS device performance by controlling degree of depletion in the gate electrode
08/14/2001US6274914 CMOS integrated circuits including source/drain plug
08/14/2001US6274913 Shielded channel transistor structure with embedded source/drain junctions
08/14/2001US6274911 CMOS device with deep current path for ESD protection
08/14/2001US6274908 Semiconductor device having input-output protection circuit
08/14/2001US6274907 Nonvolatile semiconductor memory device and its manufacture
08/14/2001US6274906 MOS transistor for high-speed and high-performance operation and manufacturing method thereof
08/14/2001US6274905 Trench structure substantially filled with high-conductivity material
08/14/2001US6274904 Edge structure and drift region for a semiconductor component and production method
08/14/2001US6274903 Memory device having a storage region is constructed with a plurality of dispersed particulates
08/14/2001US6274902 Nonvolatile floating gate memory with improved interpoly dielectric
08/14/2001US6274901 Nonvolatile semiconductor memory device and method for fabricating the same
08/14/2001US6274900 Semiconductor device architectures including UV transmissive nitride layers
08/14/2001US6274896 Drive transistor with fold gate
08/14/2001US6274894 Low-bandgap source and drain formation for short-channel MOS transistors
08/14/2001US6274893 Compound semiconductor device and method of manufacturing the same
08/14/2001US6274888 Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them
08/14/2001US6274887 Semiconductor device and manufacturing method therefor
08/14/2001US6274886 Thin-film-transistor-array substrate and liquid-crystal display device
08/14/2001US6274885 Active matrix display device with TFTs of different refractive index
08/14/2001US6274884 Thin film transistors for liquid crystal displays
08/14/2001US6274861 Active matrix display device having a common substrate and method of manufacturing the same
08/14/2001US6274515 Spin-on dielectric formation process for use in manufacturing semiconductors
08/14/2001US6274512 Method for manufacturing a semiconductor device
08/14/2001US6274510 Lower temperature method for forming high quality silicon-nitrogen dielectrics
08/14/2001US6274490 Method of manufacturing semiconductor devices having high pressure anneal
08/14/2001US6274489 Manufacturing method of semiconductor apparatus
08/14/2001US6274479 Flowable germanium doped silicate glass for use as a spacer oxide
08/14/2001US6274470 Method for fabricating a semiconductor device having a metallic silicide layer
08/14/2001US6274467 Dual work function gate conductors with self-aligned insulating cap
08/14/2001US6274466 Method of fabricating a semiconductor device
08/14/2001US6274454 Method for fabricating dielectric capacitor
08/14/2001US6274451 Method of fabricating a gate-control electrode for an IGBT transistor
08/14/2001US6274450 Method for implementing metal oxide semiconductor field effect transistor
08/14/2001US6274447 Semiconductor device comprising a MOS element and a fabrication method thereof
08/14/2001US6274446 Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap
08/14/2001US6274442 Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same
08/14/2001US6274441 Method of forming bitline diffusion halo under gate conductor ledge
08/14/2001US6274439 Process for fabricating semiconductor device with field effect transistor changeable in threshold voltage with hydrogen ion after formation of wirings
08/14/2001US6274437 Trench gated power device fabrication by doping side walls of partially filled trench
08/14/2001US6274436 Method for forming minute openings in semiconductor devices
08/14/2001US6274434 Method of making memory cell with shallow trench isolation
08/14/2001US6274432 Method of making contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators
08/14/2001US6274431 Method for manufacturing an integrated circuit arrangement having at least one MOS transistor
08/14/2001US6274422 Method for manufacturing a semiconductor device
08/14/2001US6274421 Method of making metal gate sub-micron MOS transistor
08/14/2001US6274418 Method of manufacturing flash memory cell
08/14/2001US6274417 Method of forming a semiconductor device
08/14/2001US6274416 Method for fabricating a semiconductor device including a latch-up preventing conductive layer
08/14/2001US6274415 Self-aligned Vt implant
08/14/2001US6274414 Laser anneal method of a semiconductor layer
08/14/2001US6274413 Method for fabricating a polysilicon thin film transistor
08/14/2001US6274234 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics
08/14/2001US6274007 Sputtering a silicon surface by a uniform flow of nitrogen molecular ions in an ultra-high vacuum so as to form a periodic wave-like relief,
08/14/2001US6273950 SiC device and method for manufacturing the same
08/09/2001WO2001057939A2 A hybrid organic-inorganic semiconductor device and a method of its fabrication
08/09/2001WO2001057931A1 Field effect transistor and method for the production of a charge carrier injected field effect transistor
08/09/2001WO2001057930A1 Semiconductor device and its manufacturing method
08/09/2001WO2001057929A1 Group iii nitride based fets and hemts with reduced trapping and method for producing the same
08/09/2001WO2001057927A1 Silicon nanoparticle field effect transistor and transistor memory device
08/09/2001WO2001057926A1 Mos field effect transistor arrangement
08/09/2001WO2001057925A1 Protection device for schottky diodes
08/09/2001WO2001057916A2 Bipolar transistor