| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/20/2001 | US20010023114 Method of manufacturing a semiconductor device comprising semiconductor elements formed in a toplayer of a silicon wafer situated on a buried insulating layer |
| 09/20/2001 | US20010023113 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 09/20/2001 | US20010023106 Method for fabricating high voltage transistor |
| 09/20/2001 | US20010023105 Insulated gate semiconductor device and method of manufacturing the same |
| 09/20/2001 | US20010023104 Field effect transistor and method of its manufacture |
| 09/20/2001 | US20010023092 Method of manufacturing a semiconductor device |
| 09/20/2001 | US20010023090 Thin film transistor and a fabricating method thereof |
| 09/20/2001 | US20010023089 Semiconductor device and method of fabricating the same |
| 09/20/2001 | US20010023080 Integrated circuit ferroelectric capacitors including tensile stress applying layer on the upper electrode thereof and methods of fabricatiing same |
| 09/20/2001 | US20010022635 Liquid crystal display device and wiring structure therefor |
| 09/20/2001 | US20010022389 Semiconductor junction profile and method for the production thereof |
| 09/20/2001 | US20010022386 Bipolar transistor having recessed and rounded surface and its manufacturing method |
| 09/20/2001 | US20010022385 Semiconductor device having resistive element |
| 09/20/2001 | US20010022381 Semiconductor raised source-drain structure |
| 09/20/2001 | US20010022380 Integrated MOS transistor with a high threshold voltage and low multiplication coefficient |
| 09/20/2001 | US20010022379 Power trench transistor device source region formation using silicon spacer |
| 09/20/2001 | US20010022377 Eeprom memory cell with increased dielectric integrity |
| 09/20/2001 | US20010022375 Method to fabricate a new structure with multi-self-aligned for split-gate flash |
| 09/20/2001 | US20010022371 Multi-layered gate for a CMOS imager |
| 09/20/2001 | US20010022367 Gallium nitride-based III-V group compound semiconductor |
| 09/20/2001 | US20010022366 Repairable thin film transistor matrix substrate and method of repairing the substrate |
| 09/20/2001 | US20010022365 Electro-optical device |
| 09/20/2001 | US20010022364 Semiconductor device and method of manufacturing the same |
| 09/20/2001 | US20010022363 Image sensor and method of manufacturing the same |
| 09/20/2001 | US20010022362 Thin film semiconductor device and manufacturing method thereof |
| 09/20/2001 | US20010022361 Thin film transistor, and manufacturing method thereof |
| 09/20/2001 | DE10112784A1 Semiconductor device comprising power MOSFET and peripheral device has epitaxial layers applied to trenches and p=type well layer formed by ion implantation |
| 09/20/2001 | DE10112783A1 Semiconductor arrangement with resistance includes resistive section with conductivity of second type extending through semiconductor thickness |
| 09/20/2001 | DE10112530A1 Pressure sensor for common rail fuel lines has sealing lip on flat seating improves sealing pressure distribution |
| 09/20/2001 | DE10112463A1 Superjunction semiconductor structure includes two layers of pn junctions in area contact, junctions in the first layer being closer together than those in the second |
| 09/20/2001 | DE10111212A1 Semiconductor sensor for physical quantity e.g. acceleration, has projections which prevent movable electrodes adhering to fixed electrodes |
| 09/20/2001 | CA2402776A1 Mis hydrogen sensors |
| 09/19/2001 | EP1134858A1 Buried mesa semiconductor device |
| 09/19/2001 | EP1134814A1 Millimeter wave and far-infrared detector |
| 09/19/2001 | EP1134811A1 Transistor and semiconductor device |
| 09/19/2001 | EP1134810A2 Field effect transistor |
| 09/19/2001 | EP1134809A2 Ultra high speed heterojunction bipolar transistor having a cantilivered base |
| 09/19/2001 | EP1134803A1 Semiconductor device and method for fabricating the same |
| 09/19/2001 | EP1134798A1 Semiconductor device, method for making the same and method for making electrical contacts on a semiconductor substrate |
| 09/19/2001 | EP1134797A2 Bipolar transistor having recessed and rounded surface and its manufacturing method |
| 09/19/2001 | EP1134795A1 Method of adjusting the threshold voltage of a MOS transistor |
| 09/19/2001 | EP1134794A1 Semiconductor thin film and thin film device |
| 09/19/2001 | EP1133799A1 Thin-film solar array system and method for producing the same |
| 09/19/2001 | EP1133798A1 Lateral thin-film silicon-on-insulator (soi) pmos device having a drain extension region |
| 09/19/2001 | EP1133797A1 Semiconductor device with esd protection |
| 09/19/2001 | EP1133713A2 Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
| 09/19/2001 | EP0876509B1 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination |
| 09/19/2001 | EP0860026B1 Process for reducing defects in oxide layers on silicon carbide |
| 09/19/2001 | EP0836747B1 Method of producing a read-only storage cell arrangement |
| 09/19/2001 | CN1314005A Semiconductor chip with surface coating |
| 09/19/2001 | CN1313949A Flexible silicon strain gage |
| 09/19/2001 | CN1313640A Semiconductor device and forming method thereof |
| 09/19/2001 | CN1071496C Flash memory cell and method of making the same |
| 09/18/2001 | US6292423 Nonvolatile semiconductor memory |
| 09/18/2001 | US6292390 Semiconductor device |
| 09/18/2001 | US6292241 Reflective liquid crystal display apparatus with low manufacturing cost |
| 09/18/2001 | US6292237 Active-matrix liquid-crystal display device and substrate therefor |
| 09/18/2001 | US6292183 Display device and drive circuit therefor |
| 09/18/2001 | US6292011 Method for measuring collector and emitter breakdown voltage of bipolar transistor |
| 09/18/2001 | US6292009 Reduced terminal testing system |
| 09/18/2001 | US6291886 Semiconductor device having wirings with reflection preventing film and method of manufacturing the same |
| 09/18/2001 | US6291885 Thin metal barrier for electrical interconnections |
| 09/18/2001 | US6291873 Semiconductor device having a resistive element connected to a transistor and substrate |
| 09/18/2001 | US6291868 Forming a conductive structure in a semiconductor device |
| 09/18/2001 | US6291867 Semiconductor device; also contains single-crystal silicon semiconducting channel region; amorphous/polycrystalline dielectric; integrated circuits; stability |
| 09/18/2001 | US6291866 Zirconium and/or hafnium oxynitride gate dielectric |
| 09/18/2001 | US6291865 Semiconductor device having improved on-off current characteristics |
| 09/18/2001 | US6291864 Gate structure having polysilicon layer with recessed side portions |
| 09/18/2001 | US6291863 Thin film transistor having a multi-layer stacked channel and its manufacturing method |
| 09/18/2001 | US6291861 Semiconductor device and method for producing the same |
| 09/18/2001 | US6291859 Integrated circuits |
| 09/18/2001 | US6291857 Semiconductor device of SOI structure with floating body region |
| 09/18/2001 | US6291856 Semiconductor device with alternating conductivity type layer and method of manufacturing the same |
| 09/18/2001 | US6291855 Cell of flash memory device |
| 09/18/2001 | US6291854 Electrically erasable and programmable read only memory device and manufacturing therefor |
| 09/18/2001 | US6291853 Nonvolatile semiconductor device having a memory cells each of which is constituted of a memory transistor and a selection transistor |
| 09/18/2001 | US6291852 Semiconductor element and semiconductor memory device using the same |
| 09/18/2001 | US6291851 Semiconductor device having oxide layers formed with different thicknesses |
| 09/18/2001 | US6291845 Fully-dielectric-isolated FET technology |
| 09/18/2001 | US6291843 Semiconductor memory device |
| 09/18/2001 | US6291842 Field effect transistor |
| 09/18/2001 | US6291837 Substrate of semiconductor device and fabrication method thereof as well as semiconductor device and fabrication method thereof |
| 09/18/2001 | US6291832 Resonant tunneling diode latch |
| 09/18/2001 | US6291826 Semiconductor element for electric power with a diode for sensing temperature and a diode for absorbing static electricity |
| 09/18/2001 | US6291366 Process of manufacturing semiconductor devices |
| 09/18/2001 | US6291365 Method for manufacturing thin gate silicon oxide layer |
| 09/18/2001 | US6291353 Lateral patterning |
| 09/18/2001 | US6291352 Method of manufacturing a semiconductor device |
| 09/18/2001 | US6291325 Asymmetric MOS channel structure with drain extension and method for same |
| 09/18/2001 | US6291310 Method of increasing trench density for semiconductor |
| 09/18/2001 | US6291304 Method of fabricating a high voltage transistor using P+ buried layer |
| 09/18/2001 | US6291301 Fabrication method of a gate junction conductive structure |
| 09/18/2001 | US6291298 Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
| 09/18/2001 | US6291297 Flash memory cell with self-aligned gates and fabrication process |
| 09/18/2001 | US6291291 Semiconductor device and method of manufacturing the same |
| 09/18/2001 | US6291289 Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon |
| 09/18/2001 | US6291287 Method for producing a memory cell |
| 09/18/2001 | US6291283 Forming semiconductors with substrates, layers of suboxides of hafnium, zirconium, lanthanium, yttritium, scandium and cerium metals on substrates |
| 09/18/2001 | US6291282 Method of forming dual metal gate structures or CMOS devices |
| 09/18/2001 | US6291277 Method of manufacturing a semiconductor device including etching of a stack of layers by means of photolithography |