Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2001
08/21/2001US6278173 Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device
08/21/2001US6278167 Semiconductor sensor with a base element and at least one deformation element
08/21/2001US6278166 Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxide
08/21/2001US6278165 MIS transistor having a large driving current and method for producing the same
08/21/2001US6278164 Semiconductor device with gate insulator formed of high dielectric film
08/21/2001US6278163 HV transistor structure and corresponding manufacturing method
08/21/2001US6278162 ESD protection for LDD devices
08/21/2001US6278161 Transistor
08/21/2001US6278158 Voltage variable capacitor with improved C-V linearity
08/21/2001US6278157 Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements
08/21/2001US6278156 Dielectric separate type semiconductor device
08/21/2001US6278155 P-channel MOSFET semiconductor device having a low on resistance
08/21/2001US6278154 Semiconductor apparatus and solid state imaging device
08/21/2001US6278144 Field-effect transistor and method for manufacturing the field effect transistor
08/21/2001US6278143 Semiconductor device with bipolar and J-FET transistors
08/21/2001US6278142 Semiconductor image intensifier
08/21/2001US6278141 Enhancement-mode semiconductor device
08/21/2001US6278140 Insulated gate thyristor
08/21/2001US6278131 Pixel TFT and driver TFT having different gate insulation width
08/21/2001US6278130 Liquid crystal display and fabricating method thereof
08/21/2001US6278127 Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
08/21/2001US6277756 Method for manufacturing semiconductor device
08/21/2001US6277743 Method of fabricating self-aligned silicide
08/21/2001US6277719 Method for fabricating a low resistance Poly-Si/metal gate
08/21/2001US6277718 Semiconductor device and method for fabricating the same
08/21/2001US6277713 Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor
08/21/2001US6277708 Semiconductor structures for suppressing gate oxide plasma charging damage and methods for making the same
08/21/2001US6277702 Capacitor of a semiconductor device and a method of fabricating the same
08/21/2001US6277699 Method for forming a metal-oxide-semiconductor transistor
08/21/2001US6277691 Method to fabricate a robust and reliable memory device
08/21/2001US6277689 Nonvolatile memory
08/21/2001US6277684 Method of fabricating a SOI structure semiconductor device
08/21/2001US6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics
08/21/2001US6277679 Method of manufacturing thin film transistor
08/21/2001US6277678 Methods of manufacturing thin film transistors using insulators containing water
08/21/2001US6277677 Method of manufacturing a semiconductor device
08/21/2001US6277675 Method of fabricating high voltage MOS device
08/21/2001US6276207 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same
08/21/2001US6276205 Micro-machining
08/16/2001WO2001059850A2 Structures and methods for improved capacitor cells
08/16/2001WO2001059849A1 THIN-FILM TRANSISTOR COMPRISING GATE ELECTRODE OF MoW ALLOY
08/16/2001WO2001059848A2 Mos-gated semiconductor device having alternating conductivity type semiconductor regions and methods of making the same
08/16/2001WO2001059847A2 Insulated gate semiconductor device having field shaping regions
08/16/2001WO2001059846A1 Semiconductor device with voltage divider for increased reverse blocking voltage
08/16/2001WO2001059845A2 Bipolar transistor
08/16/2001WO2001059844A2 Semiconductor device with high reverse breakdown voltage and method of manufacturing the same
08/16/2001WO2001059843A1 An improved capacitor in semiconductor chips
08/16/2001WO2001059842A1 Vertical conduction flip-chip device with bump contacts on single surface
08/16/2001WO2001059838A1 Passive alignment using slanted wall pedestal
08/16/2001WO2001059837A1 Integrated circuit
08/16/2001WO2001059836A1 Communicating device
08/16/2001WO2001059835A1 Semiconductor devices
08/16/2001WO2001059822A1 A process for forming a semiconductor structure
08/16/2001WO2001059821A1 A process for forming a semiconductor structure
08/16/2001WO2001059820A1 Semiconductor structure
08/16/2001WO2001059819A1 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
08/16/2001WO2001059818A1 Method for producing defined polycrystalline silicon areas in an amorphous silicon layer
08/16/2001WO2001059814A2 Semiconductor structure
08/16/2001WO2001059789A1 Semiconductor integrated circuit device
08/16/2001WO2001059465A1 Acceleration sensor and method of manufacture
08/16/2001WO2001058803A2 Method for producing a micromechanical component, and a component produced according to said method
08/16/2001WO2001001484A3 Trench mos-transistor
08/16/2001WO2000057478A3 An electronic device comprising a trench gate field effect device
08/16/2001US20010014535 Electro-optical device and method for manufacturing the same
08/16/2001US20010014533 Method of fabricating salicide
08/16/2001US20010014530 Method for manufacturing a semiconductor device
08/16/2001US20010014522 Forming layer containing silicon, depositing metal layer over first layer, annealing metal layer in ambient having a composition selected from nitrogen, ammonia, and hydrazine, wherein a second silicide layer is formed
08/16/2001US20010014518 Method of forming a thin film transistor
08/16/2001US20010014517 Semiconductor device and fabrication met hod thereof
08/16/2001US20010014516 Method for manufacturing semiconductor device and ultrathin semiconductor device
08/16/2001US20010014515 Wafer grooves for reducing semiconductor wafer warping
08/16/2001US20010014503 Nonvolatile semiconductor memory device and its manufacturing method
08/16/2001US20010014502 Method of manufacturing nonvolatile semiconductor memory device
08/16/2001US20010014501 Flash memory structure using sidewall floating gate having one side thereof surrounded by control gate
08/16/2001US20010014496 Semiconductor device and a manufacturing method thereof
08/16/2001US20010014495 Method for forming super-steep retrograded channel (SSRC) for cmos transistor using rapid laser annealing to reduce thermal budget
08/16/2001US20010014494 Integrated circuit with dynamic threshold voltage
08/16/2001US20010014493 Thin film semiconductor device for display and method of producing same
08/16/2001US20010014487 Hybrid S.C. devices and method of manufacture thereof
08/16/2001US20010014483 Adhesive laminated tissue layers
08/16/2001US20010014449 The stabilizer, reporter, and target amplicons are hybridized using electronic assistance of the microchip system so that base-stacking energies are used in discerning among other indicators such as wildtype or polymorphism sequence
08/16/2001US20010014047 Semiconductor memory device including an SOI substrate
08/16/2001US20010013909 Electro-optical device and its manufacturing method
08/16/2001US20010013637 Iridium conductive electrode/barrier structure and method for same
08/16/2001US20010013635 Bipolar transistor with trenched-groove isolation regions
08/16/2001US20010013634 High-voltage integrated vertical resistor and manufacturing process thereof
08/16/2001US20010013629 Multi-layer gate dielectric
08/16/2001US20010013628 Asymmetric mosfet devices
08/16/2001US20010013627 Integrated photovoltaic switch with integrated power device
08/16/2001US20010013625 Diode structure compatible with silicide processes for esd protection
08/16/2001US20010013624 Semiconductor device and process for producing the same
08/16/2001US20010013623 Simplified method of patterning polysilicon gate in a semiconductor device
08/16/2001US20010013622 Field effect transistor, control method for controling such a field effect transistor and a frequency mixer means including such a field effect transistor
08/16/2001US20010013621 Memory Device
08/16/2001US20010013620 Semiconductor device and method for producing a semiconductor device
08/16/2001US20010013619 Capacitors and dram arrays
08/16/2001US20010013618 Semiconductor device and method of fabricating the same
08/16/2001US20010013616 Integrated circuit device with composite oxide dielectric
08/16/2001US20010013613 Semiconductor device and a method of fabricating material for a semiconductor device
08/16/2001US20010013611 Semiconductor integrated circuit device and method of manufacturing the same