| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/28/2001 | US6281057 Method of manufacturing a semiconductor device |
| 08/28/2001 | US6281055 Method of fabricating a thin film transistor |
| 08/28/2001 | US6281054 SOI device and method for fabricating the same |
| 08/28/2001 | US6281053 Thin film transistor with reduced hydrogen passivation process time |
| 08/28/2001 | US6281052 Method of manufacturing semiconductor device |
| 08/28/2001 | US6281051 Semiconductor device and manufacturing method thereof |
| 08/28/2001 | US6281037 Method for the targeted production of N-type conductive areas in diamond layers by means of ion implantation |
| 08/28/2001 | US6281033 Semiconductor dynamic quantity-sensor and method of manufacturing the same |
| 08/28/2001 | US6281032 Manufacturing method for nitride III-V compound semiconductor device using bonding |
| 08/28/2001 | US6281023 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer |
| 08/28/2001 | US6281022 Multi-phase lead germanate film deposition method |
| 08/28/2001 | US6279563 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 08/28/2001 | CA2241765C Solid-state relay |
| 08/23/2001 | WO2001061762A2 Punch-through diode and method of manufacturing the same |
| 08/23/2001 | WO2001061761A1 Polycrystalline thin film and semiconductor device |
| 08/23/2001 | WO2001061759A1 Semiconductor device for low voltage protection with low capacitance |
| 08/23/2001 | WO2001061758A1 Lateral dmos improved breakdown structure and method |
| 08/23/2001 | WO2001061755A1 Semiconductor devices |
| 08/23/2001 | WO2001061752A1 Rf power transistor having cascaded cells with phase matching between cells |
| 08/23/2001 | WO2001061749A1 SEMICONDUCTOR DEVICE WITH AN INTEGRATED CMOS CIRCUIT WITH MOS TRANSISTORS HAVING SILICON-GERMANIUM (Si1-xGex) GATE ELECTRODES, AND METHOD OF MANUFACTURING SAME |
| 08/23/2001 | WO2001061742A1 Method for annealing an integrated device using a radiant energy absorber layer |
| 08/23/2001 | WO2001061741A1 A method of manufacturing a semiconductor device |
| 08/23/2001 | WO2001061735A2 Implantation mask for high energy ion implantation |
| 08/23/2001 | WO2001061733A2 Double recessed transistor |
| 08/23/2001 | WO2001061298A1 Alternating voltage with resistance pressure sensor |
| 08/23/2001 | WO2001003199A3 Vertical semiconductor structure, controlled by field-effect |
| 08/23/2001 | US20010016826 Assistance method and apparatus |
| 08/23/2001 | US20010016429 Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
| 08/23/2001 | US20010016403 Semiconductor substrate with semi-insulating polysilicon gettering site layer and process of fabrication thereof |
| 08/23/2001 | US20010016399 Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method |
| 08/23/2001 | US20010016394 Manufacturing method of semiconductor device having tantalum oxide film |
| 08/23/2001 | US20010016393 Mosfet having doped regions with different impurity concentration |
| 08/23/2001 | US20010016392 Method of manufacturing a semiconductor device |
| 08/23/2001 | US20010016391 Method for fabricating a merged integrated circuit device |
| 08/23/2001 | US20010016389 Channel implant through gate polysilicon |
| 08/23/2001 | US20010016388 Method for fabricating semiconductor device |
| 08/23/2001 | US20010016377 Semiconductor device and its manufacturing method capable of reducing low frequency noise |
| 08/23/2001 | US20010016376 Method for fabricating semiconductor device |
| 08/23/2001 | US20010016375 Method of manufacturing a polycrystalline silicon layer |
| 08/23/2001 | US20010016226 Chemically treating the surface to affect dielectric constant by reacting with a gaseous chemical compound to modify the surface preferentially compared to the bulk portion of the object; for capacitors |
| 08/23/2001 | US20010015922 Semiconductor device with an integrated CMOS circuit with MOS transistors having silicon-germanium (Si1-xGex) gate electrodes, and method of manufacturing same |
| 08/23/2001 | US20010015920 Flash eprom memory cell having increased capacitive coupling and method of manufacture thereof |
| 08/23/2001 | US20010015854 Apparatus and method for laser radiation |
| 08/23/2001 | US20010015776 TFT active matrix liquid crystal display devices |
| 08/23/2001 | US20010015676 Wireless communication system |
| 08/23/2001 | US20010015483 Spherical shaped semiconductor device, a flexible printed wiring substrate, and mounting method thereof |
| 08/23/2001 | US20010015475 Semiconductor devices |
| 08/23/2001 | US20010015474 Method of manufacturing a double-heterojunction bipolar transistor on III-V material |
| 08/23/2001 | US20010015470 Trench isolated bipolar transistor structure integrated with CMOS technology |
| 08/23/2001 | US20010015467 Transistor for a semiconductor device and method for fabricating same |
| 08/23/2001 | US20010015463 Semiconductor device and method of manufacturing the same |
| 08/23/2001 | US20010015462 Manufacturing a transistor |
| 08/23/2001 | US20010015461 SOI-structure MIS field-effect transistor and method of manufacturing the same |
| 08/23/2001 | US20010015459 Lateral high-breakdown-voltage transistor |
| 08/23/2001 | US20010015458 Semiconductor device having high breakdown voltage |
| 08/23/2001 | US20010015457 Trench MOS device and process for radhard device |
| 08/23/2001 | US20010015456 Method of forming a composite interpoly gate dielectric |
| 08/23/2001 | US20010015455 Method for shrinking array dimensions of split gate flash memory device using multilayer etching to define cell and source line and device manufactured thereby |
| 08/23/2001 | US20010015454 Nonvolatile semiconductor memory device and manufacturing method thereof |
| 08/23/2001 | US20010015452 Semiconductor device having contact hole and method of manufacturing the same |
| 08/23/2001 | US20010015450 Semiconductor integrated circuit and semiconductor integrated circuit device |
| 08/23/2001 | US20010015449 Semiconductor - oxide - semiconductor capacitor formed in intergtated circuit |
| 08/23/2001 | US20010015446 Semiconductor device |
| 08/23/2001 | US20010015445 Semiconductor device |
| 08/23/2001 | US20010015441 Semiconductor device and a method of manufacturing the same |
| 08/23/2001 | US20010015440 Thin film transistor |
| 08/23/2001 | US20010015438 Low temperature thin film transistor fabrication |
| 08/23/2001 | US20010015437 GaN field-effect transistor, inverter device, and production processes therefor |
| 08/23/2001 | US20010015436 Semiconductor device and method of manufacturing the same |
| 08/23/2001 | US20010015433 Insulated gate field effect device |
| 08/23/2001 | US20010015428 Solid-state image sensor and manufacturing method therefor |
| 08/23/2001 | US20010015319 Process for producing thin film gas sensors with dual ion beam sputtering |
| 08/23/2001 | US20010015170 SiC device and method for manufacturing the same |
| 08/23/2001 | US20010015106 Micromechanical sensor and method for its production |
| 08/23/2001 | US20010015101 Angular velocity sensor capable of preventing unnecessary oscillation |
| 08/23/2001 | DE10107327A1 Angular rate sensor, has device for suppressing unnecessary oscillations that applies external force to weight section to prevent weight section from oscillating in other than defined direction |
| 08/23/2001 | DE10006523A1 Implantationsmaske für Hochenergieionenimplantation Implantation mask for high energy ion implantation |
| 08/23/2001 | DE10005811A1 Lateral thyristor structure for electrostatic discharge prevention using CMOS technology has trough region and four highly doped regions, providing lower trigger voltage |
| 08/23/2001 | DE10005774A1 DMOS cell consists of a DMOS transistor and a Schottky diode formed in the contact hole between the source-contact layer and the drain zone of the transistor |
| 08/23/2001 | DE10005772A1 Trench-MOSFET arrangement esp. n-channel type - has gate electrode provided in trench and separated from semiconductor body and semiconductor layer by insulation layer |
| 08/23/2001 | DE10001865A1 Halbleiterbauelement und entsprechendes Prüfverfahren Semiconductor device and corresponding test methods |
| 08/23/2001 | CA2397535A1 Alternating voltage with resistance pressure sensor |
| 08/22/2001 | EP1126527A1 High-voltage semiconductor device |
| 08/22/2001 | EP1126525A2 Semiconductor memory device, method for driving the same and method for fabricating the same |
| 08/22/2001 | EP1126523A2 Soi-type semiconductor device with variable threshold voltages |
| 08/22/2001 | EP1126515A1 Method of manufacturing a III-V material double heterojunction bipolar transistor |
| 08/22/2001 | EP1126471A1 Method for reading or writing from or into a ferroelectric transistor of a memory cell and a memory matrix |
| 08/22/2001 | EP1125333A1 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers |
| 08/22/2001 | EP1125323A1 Deposition of oxide layer on the gate |
| 08/22/2001 | EP1125322A1 Method for self-adjusted tuning of thyristors with sequential triggering |
| 08/22/2001 | EP1125320A1 Low temperature formation of backside ohmic contacts for vertical devices |
| 08/22/2001 | EP1124467A2 Method and apparatus for insertion and retainment of pomade within a dispenser |
| 08/22/2001 | EP0815596B1 Improved non-destructively read ferroelectric memory cell |
| 08/22/2001 | CN1309816A Nitride based transistors on semi-insulating silicon carbide substrates |
| 08/22/2001 | CN1309428A Intelligent current equalizing method for exciting power cabinet |
| 08/22/2001 | CN1309423A Semiconductor device and mfg method thereof |
| 08/22/2001 | CN1309419A Semiconductor field effect metal oxide transistor with minimum covered capacitance |
| 08/22/2001 | CN1309401A Voltage-variable capacitor with improved C-V linearity |
| 08/21/2001 | US6278635 Storage method of semiconductor storage apparatus |
| 08/21/2001 | US6278504 Thin film transistor for liquid crystal display device having a semiconductor layer's width smaller than a width of the gate, drain and source electrodes |