| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/31/2001 | US6268632 Field effect transistor and power amplifier including the same |
| 07/31/2001 | US6268631 Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
| 07/31/2001 | US6268630 Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications |
| 07/31/2001 | US6268629 Field effect transistor with reduced narrow channel effect |
| 07/31/2001 | US6268628 Depletion type MOS semiconductor device and MOS power IC |
| 07/31/2001 | US6268626 DMOS field effect transistor with improved electrical characteristics and method for manufacturing the same |
| 07/31/2001 | US6268625 Trench-type thin film transistor |
| 07/31/2001 | US6268622 Non-volatile memory device and fabrication method thereof |
| 07/31/2001 | US6268621 Vertical channel field effect transistor |
| 07/31/2001 | US6268619 Integrated circuits |
| 07/31/2001 | US6268560 Pre-equilibrium chemical reaction energy converter |
| 07/31/2001 | US6268295 Method of manufacturing semiconductor device |
| 07/31/2001 | US6268286 Method of fabricating MOSFET with lateral resistor with ballasting |
| 07/31/2001 | US6268282 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks |
| 07/31/2001 | US6268273 Fabrication method of single electron tunneling device |
| 07/31/2001 | US6268272 Method of forming gate electrode with titanium polycide |
| 07/31/2001 | US6268256 Method for reducing short channel effect |
| 07/31/2001 | US6268254 Method and device for improved salicide resistance on polysilicon gates |
| 07/31/2001 | US6268253 Forming a removable spacer of uniform width on sidewalls of a gate of a field effect transistor during a differential rapid thermal anneal process |
| 07/31/2001 | US6268232 Method for fabricating a micromechanical component |
| 07/27/2001 | CA2332739A1 Process for formation of cap layer for semiconductor |
| 07/26/2001 | WO2001054204A1 A semiconductor device |
| 07/26/2001 | WO2001054202A1 Strained-silicon metal oxide semiconductor field effect transistors |
| 07/26/2001 | WO2001054201A1 Method for reducing junction capacitance using a halo implant photomask |
| 07/26/2001 | WO2001054200A1 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors and methods of fabricating same |
| 07/26/2001 | WO2001054199A1 Semiconductor device and manufacture thereof |
| 07/26/2001 | WO2001054197A1 Distributed reverse surge guard |
| 07/26/2001 | WO2001054177A1 Tungsten gate electrode method and device |
| 07/26/2001 | WO2001054174A1 Silicon on insulator circuit structure with buried semiconductor interconnect structure and method for forming same |
| 07/26/2001 | WO2001054171A1 A chemical sensor using chemically induced electron-hole production at a schottky barrier |
| 07/26/2001 | WO2001054168A2 Semiconductor component and corresponding testing method |
| 07/26/2001 | WO2001054167A2 Silicon/germanium bipolar transistor with an optimized germanium profile |
| 07/26/2001 | WO2001053887A2 An active matrix electro-optic display |
| 07/26/2001 | WO2001053565A1 Process for preparing metal nitride thin film employing amine-adduct single-source precursor |
| 07/26/2001 | WO2000060670A3 Integrated semiconductor device with one lateral power gate |
| 07/26/2001 | WO2000057481A3 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure |
| 07/26/2001 | US20010010043 Assistance method and apparatus |
| 07/26/2001 | US20010009813 Method for fabricating semiconductor integrated circuit device |
| 07/26/2001 | US20010009801 Method of making insulator for electrical structures |
| 07/26/2001 | US20010009800 Manufacture of trench-gate semiconductor devices |
| 07/26/2001 | US20010009799 Converting amorphous silicon layer into a hemispherical grained silicon film |
| 07/26/2001 | US20010009794 Method and system for emitter partitioning for SiGe RF power transistors |
| 07/26/2001 | US20010009793 Bipolar transistor formed by epitaxial growth or ion implantation that has an epitaxial silicon collector layer, a base region under an emitter defined as an intrinsic base and a peripheral region defined as an outer base region |
| 07/26/2001 | US20010009791 Forming a line of undoped semiconductive material, providing conductivity-enhancing impurity into the line and source/drain regions, rendering the undoped material of the line conductive |
| 07/26/2001 | US20010009790 Self-aligned lateral DMOS with spacer drift region |
| 07/26/2001 | US20010009789 Semiconductor device and manufacturing method thereof |
| 07/26/2001 | US20010009788 Layers of silicon carbide, silicon dioxide an insulating material, and a gate contact |
| 07/26/2001 | US20010009785 Forming n-type drain region in n-type silicon region, forming n-type source region in n-type silicon region, forming dielectric layer on n-type silicon region, forming a p-type polysilicon gate on dielectric layer |
| 07/26/2001 | US20010009784 Preparing substrate, isolating active region, depositing gate oxide, depositing first and second selective etchable layers over gate oxide layer, etching to undercut first etchable layer, implanting ions, etching, depositing oxide, metallizing |
| 07/26/2001 | US20010009783 Semiconductor device and fabrication method thereof |
| 07/26/2001 | US20010009775 Semiconductor substrate, gate insulating film formed on surface of semiconductor substrate, tunnel insulating film obtained by forming portion of gate insulating film into thin layer, floating gate formed on gate insulating film |
| 07/26/2001 | US20010009527 Semiconductor memory device |
| 07/26/2001 | US20010009447 Liquid crystal display device |
| 07/26/2001 | US20010009292 Semiconductor device and method of manufacturing the same |
| 07/26/2001 | US20010009291 Semiconductor structure having reduced silicide resistance between closely spaced gates and method of fabrication |
| 07/26/2001 | US20010009289 Flash memory device and fabrication method thereof |
| 07/26/2001 | US20010009288 Semiconductor device and method of fabricating the same |
| 07/26/2001 | US20010009287 High breakdown voltage MOS type semiconductor apparatus |
| 07/26/2001 | US20010009279 Semiconductor device and manufacturing method of the same |
| 07/26/2001 | US20010009278 Sparse-carrier devices and method of fabrication |
| 07/26/2001 | US20010009112 Microsystem with a flexible membrane for a pressure sensor and manufacturing process |
| 07/26/2001 | US20010009059 Method and device for manufacturing pressure detecting apparatus |
| 07/26/2001 | DE10102355A1 Pressure detection unit has a housing section of injection molded plastics with glass fibers fitted to a second housing section to form a pressure detection chamber with a sensor and a sealed fit for the O-ring seal |
| 07/26/2001 | DE10100695A1 Halbleitervorrichtung Semiconductor device |
| 07/26/2001 | DE10064002A1 Vielschicht-Dünnschichtstruktur, ferroelektrisches Dünnschichtelement und Verfahren zur Herstellung derselben Multilayer thin film structure, the ferroelectric thin-film element and process for producing same |
| 07/26/2001 | DE10039166A1 Semiconductor device used as a MOSFET comprises a semiconductor substrate, a gate insulating layer formed on the substrate, and a gate electrode formed on the substrate with the gate insulating layer in between |
| 07/26/2001 | DE10002754A1 Semiconductor structural component for applying to a pre-structured semiconductor substrate applies a mask to a substrate with a distinctly reduced width at a definite point allowing epitaxial growth through MBE and MOVPE. |
| 07/26/2001 | DE10001869A1 Controllable semiconducting component that can block in both directions achieves higher blocking voltage between first and second conducting zones - has first conducting zone with strongly doped zone for connecting connection electrode and more weakly doped zone enclosing strongly doped zone |
| 07/25/2001 | EP1119055A1 Distributed reverse surge guard |
| 07/25/2001 | EP1119054A1 Electrostatic induction transistor |
| 07/25/2001 | EP1119053A2 Semiconductor, semiconductor device, and method for fabricating the same |
| 07/25/2001 | EP1119052A2 Vertical DMOS transistor device having a low on-resistance |
| 07/25/2001 | EP1119051A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119050A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119044A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119043A2 BiCDMOS process technology and structures |
| 07/25/2001 | EP1119036A1 BiCDMOS process technology and structures |
| 07/25/2001 | EP1118125A1 Lateral thin-film silicon-on-insulator (soi) device having a gate electrode and a field plate electrode |
| 07/25/2001 | EP1118124A1 Bipolar transistor and method for producing same |
| 07/25/2001 | EP1118109A1 Silicon carbide deposition method and use as a barrier layer and passivation layer |
| 07/25/2001 | EP1118107A1 In situ deposition of low k si carbide barrier layer, etch stop, and anti-reflective coating for damascene applications |
| 07/25/2001 | EP1118025A2 Silicon carbide for use as a low dielectric constant anti-reflective coating and its deposition method |
| 07/25/2001 | EP0904588B1 A device and method for multi-level charge/storage and reading out |
| 07/25/2001 | CN1305636A Planar electron emitter (PEE) |
| 07/25/2001 | CN1305593A Scintillator panel, radiation image sensor, and method for manufacturing the same |
| 07/25/2001 | CN1305232A MOSFET memory with composite nm-grain Ge/Si float grid structure |
| 07/25/2001 | CN1305231A Metallic oxide semiconductor field effect tube semiconductor device |
| 07/25/2001 | CN1305230A Tunnel transistor suitable for nonvolatile storage |
| 07/25/2001 | CN1305227A Actire matrix display device |
| 07/25/2001 | CN1305223A Method of manufacturing thin film transistor |
| 07/25/2001 | CN1305222A Method of manufacturing thin film transistor |
| 07/24/2001 | US6266800 System and method for eliminating effects of parasitic bipolar transistor action in dynamic logic using setup time determination |
| 07/24/2001 | US6266279 Nonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory device |
| 07/24/2001 | US6266276 Non-volatile semiconductor memory device and internal operation method for said non-volatile semiconductor memory device |
| 07/24/2001 | US6266275 Dual source side polysilicon select gate structure and programming method utilizing single tunnel oxide for nand array flash memory |
| 07/24/2001 | US6265777 Semiconductor device with a low resistance wiring layer composed of a polysilicon and a refractory metal |
| 07/24/2001 | US6265755 Semiconductor integrated circuit comprising MIS capacitors |
| 07/24/2001 | US6265754 Covered slit isolation between integrated circuit devices |
| 07/24/2001 | US6265752 Method of forming a HVNMOS with an N+ buried layer combined with N well and a structure of the same |
| 07/24/2001 | US6265749 Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant |