| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 08/09/2001 | WO2001057915A2 Trenched schottky rectifiers |
| 08/09/2001 | WO2001057914A2 Process of manufacturing a semiconductor device including a buried channel field effect transistor |
| 08/09/2001 | WO2001057588A1 Insulated-gate transistor for liquid crystal display and method for fabricating the same |
| 08/09/2001 | WO2000071787A3 Semi-insulating silicon carbide without vanadium domination |
| 08/09/2001 | WO2000052750A3 Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor |
| 08/09/2001 | US20010012702 Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display (tft- lcd using the same |
| 08/09/2001 | US20010012693 Method for forming a silicide region on a silicon body |
| 08/09/2001 | US20010012677 Semiconductor element forming process having a step of separating film structure from substrate |
| 08/09/2001 | US20010012673 Mos transistor having self-aligned well bias area and method of fabricating the same |
| 08/09/2001 | US20010012671 Semiconductor device and a method of manufacturing the same |
| 08/09/2001 | US20010012670 Semiconductor device and method manufacturing same |
| 08/09/2001 | US20010012666 Electrostatic discharge protection for salicided devices |
| 08/09/2001 | US20010012665 Semiconductor device and method for fabricating the same |
| 08/09/2001 | US20010012663 Single feature size mos technology power device |
| 08/09/2001 | US20010012659 Method of manufacturing semiconductor device having capacitor |
| 08/09/2001 | US20010012658 Method for producing a semiconductor memory device |
| 08/09/2001 | US20010012656 Method of forming dram trench capacitor with metal layer over hemispherical grain polysilicon |
| 08/09/2001 | US20010012655 Bipolar transistor |
| 08/09/2001 | US20010012654 High density mos technology power device |
| 08/09/2001 | US20010012653 Method for fabricating mos transistors |
| 08/09/2001 | US20010012651 Laser illumination apparatus |
| 08/09/2001 | US20010012650 Method of manufacturing thin film transistor |
| 08/09/2001 | US20010012648 Thin film transistor and method of fabricating the same |
| 08/09/2001 | US20010012216 Semiconductor memory device for effecting erasing operation in block unit |
| 08/09/2001 | US20010012077 Array substrate for use in LCD device |
| 08/09/2001 | US20010011868 Light-emitting device and method of manufacturing the same |
| 08/09/2001 | US20010011772 Semiconductor device having a ball grid array and a fabrication process thereof |
| 08/09/2001 | US20010011753 Semiconductor integrated circuit device and method of manufacturing thereof |
| 08/09/2001 | US20010011752 High-voltage device and method for manufacturing high-voltage device |
| 08/09/2001 | US20010011751 Method and a circuit for improving the effectiveness of ESD protection in circuit structures formed in a semiconductor |
| 08/09/2001 | US20010011750 Semiconductor device |
| 08/09/2001 | US20010011748 Semiconductor thin film and thin film device |
| 08/09/2001 | US20010011747 Semiconductor device |
| 08/09/2001 | US20010011746 Semiconductor device |
| 08/09/2001 | US20010011745 Semiconductor device |
| 08/09/2001 | US20010011744 New poly spacer split gate cell with extremely small cell size |
| 08/09/2001 | US20010011743 Method for making ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material |
| 08/09/2001 | US20010011734 Semiconductor device having a library of standard cells and method of designing the same |
| 08/09/2001 | US20010011733 Epitaxial layer capable of exceeding critical thickness |
| 08/09/2001 | US20010011729 Self-aligned bipolar junction silicon carbide transistors |
| 08/09/2001 | US20010011728 LCD with increased pixel opening sizes |
| 08/09/2001 | US20010011726 Thin film semiconductor divice, display device using such thin film semiconductor device and manufacturing method thereof |
| 08/09/2001 | US20010011725 Semiconductor device and method of producing the same |
| 08/09/2001 | US20010011723 Semiconductor device with a tunnel diode and method of manufacturing same |
| 08/09/2001 | US20010011722 Nitride mask layer, silicide is formed on the gate and not in the diffusion region, which are in the cell array region; semiconductor device with lower resistance and decrease in the leakage defects |
| 08/09/2001 | US20010011717 Vertical power component manufacturing method |
| 08/09/2001 | US20010011705 X-ray detecting device and fabricating method thereof |
| 08/09/2001 | US20010011554 Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same |
| 08/09/2001 | DE19948906C2 Verfahren zum Herstellen tiefdiffundierter n-leitender Gebiete in einem p-dotierten Siliziumsubstrat A method of manufacturing tiefdiffundierter n-type regions in a p-doped silicon substrate |
| 08/09/2001 | DE10049354A1 Semiconductor component structure for suppressing voltage fluctuations without disadvantageous effects incorporates a diode with PN transition, high turnover voltage and fast reverse recovery characteristics. |
| 08/09/2001 | DE10005405A1 Layer stack used for a silicon-based pnp hetero bipolar transistor in integrated circuits comprises a p-conducting doped collector layer separated from a p-conducting emitter layer by a n-conducting base layer |
| 08/09/2001 | DE10004733A1 Thin film semiconductor element used in the production of a solar cell comprises a substrate and a chalcopyrite layer doped with silver |
| 08/09/2001 | DE10004111A1 Bipolartransistor Bipolar transistor |
| 08/09/2001 | DE10003703A1 Steuerbares, auf einem Isolationsmaterial gebildetes Halbleiterschaltelement Taxable, formed on an insulating material semiconductor switching element |
| 08/08/2001 | EP1122800A2 Light-emitting device and method of manufacturing the same |
| 08/08/2001 | EP1122796A2 Vertical semiconductor device with a source-down-design and corresponding fabrication process |
| 08/08/2001 | EP1122795A2 High dielectric constant gate oxides for silicon-based devices |
| 08/08/2001 | EP1122790A2 A conductive mesh bias connection for an array of elevated active pixel sensors |
| 08/08/2001 | EP1122771A2 Raised silicide source/drain MOS transistors and method |
| 08/08/2001 | EP1122567A1 Passive alignement using slanted wall pedestal |
| 08/08/2001 | EP1121718A1 Solar cell comprising a bypass diode |
| 08/08/2001 | EP1121716A2 Elevated channel mosfet |
| 08/08/2001 | EP1121713A1 Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
| 08/08/2001 | EP0939888B1 Micromechanical sensor |
| 08/08/2001 | EP0756758B1 Mosfet with reduced leakage current |
| 08/08/2001 | EP0639294B1 Semiconductor device with integrated rc network and schottky diode |
| 08/08/2001 | CN1307730A Thin-film transistor and method of manufacture thereof |
| 08/08/2001 | CN1307442A Luminescent device and its manufacture |
| 08/07/2001 | USRE37311 Parallel type nonvolatile semiconductor memory device and method of using the same |
| 08/07/2001 | USRE37308 EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
| 08/07/2001 | US6272050 Method and apparatus for providing an embedded flash-EEPROM technology |
| 08/07/2001 | US6272042 Nonvolatile semiconductor memory |
| 08/07/2001 | US6271897 Process of producing a semiconductor device |
| 08/07/2001 | US6271818 Semiconductor device |
| 08/07/2001 | US6271686 Method for elimination of parasitic bipolar action in silicon on insulator (SOI) dynamic logic circuits |
| 08/07/2001 | US6271594 Semiconductor device and method of manufacturing the same |
| 08/07/2001 | US6271590 Graded layer for use in semiconductor circuits and method for making same |
| 08/07/2001 | US6271577 Transistor and method |
| 08/07/2001 | US6271573 Semiconductor device with gate structure and method of manufacturing the same |
| 08/07/2001 | US6271572 Multi-voltage level semiconductor device and its manufacture |
| 08/07/2001 | US6271566 Semiconductor device having a carbon containing insulation layer formed under the source/drain |
| 08/07/2001 | US6271565 Asymmetrical field effect transistor |
| 08/07/2001 | US6271564 Semiconductor device and method of manufacturing the same |
| 08/07/2001 | US6271563 MOS transistor with high-K spacer designed for ultra-large-scale integration |
| 08/07/2001 | US6271562 Semiconductor component which can be controlled by a field effect |
| 08/07/2001 | US6271560 Single-poly EPROM cell with CMOS compatible programming voltages |
| 08/07/2001 | US6271559 Semiconductor memory with information storage capacitance including an electrode containing precious metal and an added element |
| 08/07/2001 | US6271552 Lateral RF MOS device with improved breakdown voltage |
| 08/07/2001 | US6271551 Si-Ge CMOS semiconductor device |
| 08/07/2001 | US6271550 Junction field effect transistor or JFET with a well which has graded doping directly beneath the gate electrode |
| 08/07/2001 | US6271549 Process for fabricating a metal silicide layer of a semiconductor and apparatus |
| 08/07/2001 | US6271547 Double recessed transistor with resistive layer |
| 08/07/2001 | US6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior |
| 08/07/2001 | US6271544 SiC/Si heterostructure semiconductor switch and fabrication thereof |
| 08/07/2001 | US6271543 Active matrix type display device and method of manufacturing the same |
| 08/07/2001 | US6271541 Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate |
| 08/07/2001 | US6271540 Thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect and a method for fabricating the same |
| 08/07/2001 | US6271537 Slotted quantum well sensor |
| 08/07/2001 | US6271526 Efficient radiation coupling to quantum-well radiation-sensing array via evanescent waves |
| 08/07/2001 | US6271145 Method for making a micromachine |