Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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07/17/2001 | US6262461 Method and apparatus for creating a voltage threshold in a FET |
07/17/2001 | US6262459 High-voltage device and method for manufacturing high-voltage device |
07/17/2001 | US6262457 Method of producing a transistor structure |
07/17/2001 | US6262456 Integrated circuit having transistors with different threshold voltages |
07/17/2001 | US6262454 Protection structure for high-voltage integrated electronic devices |
07/17/2001 | US6262453 Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
07/17/2001 | US6262452 Nonvolatile semiconductor memory device and manufacturing method therefor |
07/17/2001 | US6262451 Electrode structure for transistors, non-volatile memories and the like |
07/17/2001 | US6262450 DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate |
07/17/2001 | US6262446 Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices |
07/17/2001 | US6262444 Field-effect semiconductor device with a recess profile |
07/17/2001 | US6262443 Monolithic protected rectifying bridge |
07/17/2001 | US6262442 Zener diode and RC network combination semiconductor device for use in integrated circuits |
07/17/2001 | US6262439 Silicon carbide semiconductor device |
07/17/2001 | US6262438 Active matrix type display circuit and method of manufacturing the same |
07/17/2001 | US6262436 Semiconductor device and method of making the same |
07/17/2001 | US6261976 Method of forming low pressure silicon oxynitride dielectrics having high reliability |
07/17/2001 | US6261972 Dual gate oxide process for uniform oxide thickness |
07/17/2001 | US6261971 Method of manufacturing a semiconductor device by thermal oxidation of amorphous semiconductor film |
07/17/2001 | US6261964 Material removal method for forming a structure |
07/17/2001 | US6261934 Dry etch process for small-geometry metal gates over thin gate dielectric |
07/17/2001 | US6261932 Method of fabricating Schottky diode and related structure |
07/17/2001 | US6261928 Producing microstructures or nanostructures on a support |
07/17/2001 | US6261920 N-channel MOSFET having STI structure and method for manufacturing the same |
07/17/2001 | US6261913 Method for using thin spacers and oxidation in gate oxides |
07/17/2001 | US6261910 Semiconductor device and method of manufacturing the same |
07/17/2001 | US6261909 Semiconductor device having ultra shallow junctions and a reduced channel length and method for making same |
07/17/2001 | US6261907 Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gate |
07/17/2001 | US6261906 Method for forming a flash memory cell with improved drain erase performance |
07/17/2001 | US6261904 Dual bit isolation scheme for flash devices |
07/17/2001 | US6261903 Floating gate method and device |
07/17/2001 | US6261902 Method of forming a transistor structure |
07/17/2001 | US6261889 Manufacturing method of semiconductor device |
07/17/2001 | US6261887 Transistors with independently formed gate structures and method |
07/17/2001 | US6261886 Increased gate to body coupling and application to DRAM and dynamic circuits |
07/17/2001 | US6261884 Method of fabricating and operating single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size |
07/17/2001 | US6261881 Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same |
07/17/2001 | US6261880 Process for manufacturing thin film transistors |
07/17/2001 | US6261878 Integrated circuit with dynamic threshold voltage |
07/17/2001 | US6261875 Transistor and process for fabricating the same |
07/17/2001 | US6261874 Fast recovery diode and method for its manufacture |
07/17/2001 | US6261705 Poly-si film and a semiconductor device wherein the poly-si film is applied |
07/17/2001 | US6261382 Wafer marking |
07/12/2001 | WO2001050558A1 Group iii-nitride semiconductor structures with reduced phase separation |
07/12/2001 | WO2001050557A1 Group iii-nitride semiconductor structures with reduced phase separation |
07/12/2001 | WO2001050538A1 A thin film transistor and a method for manufacturing thereof |
07/12/2001 | WO2001050537A1 Bipolar transistor that can be fabricated in cmos |
07/12/2001 | WO2001050536A1 Semiconductor device, method of manufacture thereof, and information processing device |
07/12/2001 | WO2001050535A2 Field effect transistor structure with partially isolated source/drain junctions and methods of making same |
07/12/2001 | WO2001050534A2 Qubit using a josephson junction between s-wave and d-wave superconductors |
07/12/2001 | WO2001050516A1 Method of manufacturing a thin-film transistor |
07/12/2001 | WO2001050515A1 Thin-film transistor |
07/12/2001 | WO2001050514A1 Thin film transistor |
07/12/2001 | WO2001050513A1 Thin film transistor |
07/12/2001 | WO2001050512A1 Thin-film transistor and its manufacturing method |
07/12/2001 | WO2001050507A1 Methods of forming semiconductor structures |
07/12/2001 | WO2001050504A2 An improved method for buried anti-reflective coating removal |
07/12/2001 | WO2001050137A2 Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same |
07/12/2001 | WO2001050106A1 Grain growth of electrical interconnection for microelectromechanical systems (mems) |
07/12/2001 | WO2000077828A3 Method of manufacturing a variable work function gate mosfet using a dummy gate |
07/12/2001 | WO2000065636A8 A bipolar transistor |
07/12/2001 | US20010007779 Method for manufacturing fringe field switching mode liquid crystal display device |
07/12/2001 | US20010007718 Flat band structure |
07/12/2001 | US20010007521 Electrostatic discharge protection circuit with high triggering voltage |
07/12/2001 | US20010007432 Charge pump circuit |
07/12/2001 | US20010007369 Edge termination for silicon power devices |
07/12/2001 | US20010007368 Semiconductor devices and manufacturing methods thereof |
07/12/2001 | US20010007364 Semiconductor device |
07/12/2001 | US20010007362 Thin film transistor, liquid crystal display and fabricating methods thereof |
07/12/2001 | US20010007358 Liquid crystal display and manufacturing process of thin film transistor used therein |
07/12/2001 | US20010007357 Semiconductor device and a manufacturing method thereof |
07/12/2001 | US20010007348 Image-sensing apparatus |
07/12/2001 | US20010007254 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
07/12/2001 | DE19962231A1 Verfahren zur Herstellung mikromechanischer Strukturen A process for producing micromechanical structures |
07/12/2001 | DE10100321A1 Capacitive pressure sensor used in industrial measurement transducer, has dielectric section integrally formed in diaphragm, which is moved in gap between capacitor plates to output signal indicating pressure change |
07/12/2001 | DE10000368A1 Mikromechanische Struktur, insbesondere für einen Beschleunigungssensor oder Drehratensensor, und entsprechendes Herstellungsverfahren Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor, and manufacturing method thereof |
07/12/2001 | CA2396201A1 Qubit using a josephson junction between s-wave and d-wave superconductors |
07/11/2001 | EP1115159A1 Static induction transistor and its manufacturing method, and power converter |
07/11/2001 | EP1115158A1 Soi-misfet |
07/11/2001 | EP1115157A1 Power-switching semiconductor device |
07/11/2001 | EP1114791A2 Method of forming structure having surface roughness due to nano-sized surface features |
07/11/2001 | EP1114472A2 Sensor for measuring a magnetic field |
07/11/2001 | EP1114467A1 Ferroelectric transistor, its use in a storage cell system and its method of production |
07/11/2001 | EP1114466A1 High-voltage semiconductor component |
07/11/2001 | EP1114465A1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device |
07/11/2001 | EP1114463A1 A single polysilicon flash eeprom and method for making same |
07/11/2001 | EP1114462A1 Ternary nitride-carbide barrier layers |
07/11/2001 | EP1114461A1 Semiconductor circuit |
07/11/2001 | EP1114460A1 Semiconductor chip with surface coating |
07/11/2001 | EP1114448A1 A method of manufacturing a semiconductor device |
07/11/2001 | EP1114447A1 Semiconductor device having oxide-nitride gate insulating layer and method of manufacture thereof |
07/11/2001 | EP1114444A1 Semiconductor processing method, semiconductor circuitry and gate stack |
07/11/2001 | EP1114443A1 Voltage-cycling recovery of process-damaged ferroelectric films |
07/11/2001 | CN2439105Y Faced semi-conductor discharge tube |
07/11/2001 | CN1303127A Non volatile semi-conductor memory and its manufacturing method |
07/11/2001 | CN1068458C Body contact structure for semiconductor device |
07/10/2001 | US6259937 Implantable substrate sensor |
07/10/2001 | US6259618 Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup |
07/10/2001 | US6259494 Repairable thin film transistor matrix substrate having overlapping regions between auxiliary capacitance electrodes and drain bus |
07/10/2001 | US6259158 Semiconductor device utilizing an external electrode with a small pitch connected to a substrate |