Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2001
07/17/2001US6262461 Method and apparatus for creating a voltage threshold in a FET
07/17/2001US6262459 High-voltage device and method for manufacturing high-voltage device
07/17/2001US6262457 Method of producing a transistor structure
07/17/2001US6262456 Integrated circuit having transistors with different threshold voltages
07/17/2001US6262454 Protection structure for high-voltage integrated electronic devices
07/17/2001US6262453 Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate
07/17/2001US6262452 Nonvolatile semiconductor memory device and manufacturing method therefor
07/17/2001US6262451 Electrode structure for transistors, non-volatile memories and the like
07/17/2001US6262450 DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate
07/17/2001US6262446 Methods of forming multilevel conductive interconnections including capacitor electrodes for integrated circuit devices
07/17/2001US6262444 Field-effect semiconductor device with a recess profile
07/17/2001US6262443 Monolithic protected rectifying bridge
07/17/2001US6262442 Zener diode and RC network combination semiconductor device for use in integrated circuits
07/17/2001US6262439 Silicon carbide semiconductor device
07/17/2001US6262438 Active matrix type display circuit and method of manufacturing the same
07/17/2001US6262436 Semiconductor device and method of making the same
07/17/2001US6261976 Method of forming low pressure silicon oxynitride dielectrics having high reliability
07/17/2001US6261972 Dual gate oxide process for uniform oxide thickness
07/17/2001US6261971 Method of manufacturing a semiconductor device by thermal oxidation of amorphous semiconductor film
07/17/2001US6261964 Material removal method for forming a structure
07/17/2001US6261934 Dry etch process for small-geometry metal gates over thin gate dielectric
07/17/2001US6261932 Method of fabricating Schottky diode and related structure
07/17/2001US6261928 Producing microstructures or nanostructures on a support
07/17/2001US6261920 N-channel MOSFET having STI structure and method for manufacturing the same
07/17/2001US6261913 Method for using thin spacers and oxidation in gate oxides
07/17/2001US6261910 Semiconductor device and method of manufacturing the same
07/17/2001US6261909 Semiconductor device having ultra shallow junctions and a reduced channel length and method for making same
07/17/2001US6261907 Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gate
07/17/2001US6261906 Method for forming a flash memory cell with improved drain erase performance
07/17/2001US6261904 Dual bit isolation scheme for flash devices
07/17/2001US6261903 Floating gate method and device
07/17/2001US6261902 Method of forming a transistor structure
07/17/2001US6261889 Manufacturing method of semiconductor device
07/17/2001US6261887 Transistors with independently formed gate structures and method
07/17/2001US6261886 Increased gate to body coupling and application to DRAM and dynamic circuits
07/17/2001US6261884 Method of fabricating and operating single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size
07/17/2001US6261881 Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same
07/17/2001US6261880 Process for manufacturing thin film transistors
07/17/2001US6261878 Integrated circuit with dynamic threshold voltage
07/17/2001US6261875 Transistor and process for fabricating the same
07/17/2001US6261874 Fast recovery diode and method for its manufacture
07/17/2001US6261705 Poly-si film and a semiconductor device wherein the poly-si film is applied
07/17/2001US6261382 Wafer marking
07/12/2001WO2001050558A1 Group iii-nitride semiconductor structures with reduced phase separation
07/12/2001WO2001050557A1 Group iii-nitride semiconductor structures with reduced phase separation
07/12/2001WO2001050538A1 A thin film transistor and a method for manufacturing thereof
07/12/2001WO2001050537A1 Bipolar transistor that can be fabricated in cmos
07/12/2001WO2001050536A1 Semiconductor device, method of manufacture thereof, and information processing device
07/12/2001WO2001050535A2 Field effect transistor structure with partially isolated source/drain junctions and methods of making same
07/12/2001WO2001050534A2 Qubit using a josephson junction between s-wave and d-wave superconductors
07/12/2001WO2001050516A1 Method of manufacturing a thin-film transistor
07/12/2001WO2001050515A1 Thin-film transistor
07/12/2001WO2001050514A1 Thin film transistor
07/12/2001WO2001050513A1 Thin film transistor
07/12/2001WO2001050512A1 Thin-film transistor and its manufacturing method
07/12/2001WO2001050507A1 Methods of forming semiconductor structures
07/12/2001WO2001050504A2 An improved method for buried anti-reflective coating removal
07/12/2001WO2001050137A2 Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same
07/12/2001WO2001050106A1 Grain growth of electrical interconnection for microelectromechanical systems (mems)
07/12/2001WO2000077828A3 Method of manufacturing a variable work function gate mosfet using a dummy gate
07/12/2001WO2000065636A8 A bipolar transistor
07/12/2001US20010007779 Method for manufacturing fringe field switching mode liquid crystal display device
07/12/2001US20010007718 Flat band structure
07/12/2001US20010007521 Electrostatic discharge protection circuit with high triggering voltage
07/12/2001US20010007432 Charge pump circuit
07/12/2001US20010007369 Edge termination for silicon power devices
07/12/2001US20010007368 Semiconductor devices and manufacturing methods thereof
07/12/2001US20010007364 Semiconductor device
07/12/2001US20010007362 Thin film transistor, liquid crystal display and fabricating methods thereof
07/12/2001US20010007358 Liquid crystal display and manufacturing process of thin film transistor used therein
07/12/2001US20010007357 Semiconductor device and a manufacturing method thereof
07/12/2001US20010007348 Image-sensing apparatus
07/12/2001US20010007254 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
07/12/2001DE19962231A1 Verfahren zur Herstellung mikromechanischer Strukturen A process for producing micromechanical structures
07/12/2001DE10100321A1 Capacitive pressure sensor used in industrial measurement transducer, has dielectric section integrally formed in diaphragm, which is moved in gap between capacitor plates to output signal indicating pressure change
07/12/2001DE10000368A1 Mikromechanische Struktur, insbesondere für einen Beschleunigungssensor oder Drehratensensor, und entsprechendes Herstellungsverfahren Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor, and manufacturing method thereof
07/12/2001CA2396201A1 Qubit using a josephson junction between s-wave and d-wave superconductors
07/11/2001EP1115159A1 Static induction transistor and its manufacturing method, and power converter
07/11/2001EP1115158A1 Soi-misfet
07/11/2001EP1115157A1 Power-switching semiconductor device
07/11/2001EP1114791A2 Method of forming structure having surface roughness due to nano-sized surface features
07/11/2001EP1114472A2 Sensor for measuring a magnetic field
07/11/2001EP1114467A1 Ferroelectric transistor, its use in a storage cell system and its method of production
07/11/2001EP1114466A1 High-voltage semiconductor component
07/11/2001EP1114465A1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device
07/11/2001EP1114463A1 A single polysilicon flash eeprom and method for making same
07/11/2001EP1114462A1 Ternary nitride-carbide barrier layers
07/11/2001EP1114461A1 Semiconductor circuit
07/11/2001EP1114460A1 Semiconductor chip with surface coating
07/11/2001EP1114448A1 A method of manufacturing a semiconductor device
07/11/2001EP1114447A1 Semiconductor device having oxide-nitride gate insulating layer and method of manufacture thereof
07/11/2001EP1114444A1 Semiconductor processing method, semiconductor circuitry and gate stack
07/11/2001EP1114443A1 Voltage-cycling recovery of process-damaged ferroelectric films
07/11/2001CN2439105Y Faced semi-conductor discharge tube
07/11/2001CN1303127A Non volatile semi-conductor memory and its manufacturing method
07/11/2001CN1068458C Body contact structure for semiconductor device
07/10/2001US6259937 Implantable substrate sensor
07/10/2001US6259618 Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup
07/10/2001US6259494 Repairable thin film transistor matrix substrate having overlapping regions between auxiliary capacitance electrodes and drain bus
07/10/2001US6259158 Semiconductor device utilizing an external electrode with a small pitch connected to a substrate