| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/06/2001 | US20010019135 Sparse-carrier devices and method of fabrication |
| 09/06/2001 | US20010019132 Semi-insulating silicon carbide without vanadium domination |
| 09/06/2001 | US20010019131 Field effect transistor and manufacturing method thereof |
| 09/06/2001 | US20010019130 Semiconductor device |
| 09/06/2001 | US20010019129 Contact structure of wiring and a method for manufacturing the same |
| 09/06/2001 | US20010019128 Semiconductor device, display device, and method for producing a semiconductor device |
| 09/06/2001 | US20010019127 Etching method, thin film transistor matrix substrate, and its manufacture |
| 09/06/2001 | US20010019126 Methods of forming thin-film transistor display devices |
| 09/06/2001 | US20010019125 Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same |
| 09/06/2001 | US20010019123 Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same |
| 09/06/2001 | US20010018987 Interconnect structure |
| 09/06/2001 | US20010018923 Pre-equilibrium chemical reaction energy converter |
| 09/06/2001 | US20010018800 Method for forming interconnects |
| 09/06/2001 | DE10051579A1 Semiconductor device comprises sliced insulating oxide film to protect against dielectric strain |
| 09/06/2001 | DE10009346A1 Schreib-/Leseverstärker mit Vertikaltransistoren für DRAM-Speicher Read / Write Amplifier with vertical transistors for DRAM memory |
| 09/06/2001 | DE10007415A1 Semiconductor component with planar power switching cell - has lateral channel region with applied gate structure between front and rear electrodes and vertical trench electrode |
| 09/05/2001 | EP1130761A2 A motor driving circuit, a method for driving a motor, and a semiconductor integrated circuit device |
| 09/05/2001 | EP1130654A1 Integrated device including a metal- insulator-metal capacitor |
| 09/05/2001 | EP1130653A2 Field-effect transistor and method of making the same |
| 09/05/2001 | EP1130652A1 Semiconductor device with improved protection against electrostatic discharges |
| 09/05/2001 | EP1130651A2 Radio frequency modules and modules for moving target detection |
| 09/05/2001 | EP1130646A1 Chip-mounted enclosure |
| 09/05/2001 | EP1130645A2 Semiconductor chip with a thermal stress relief layer on the electrodes |
| 09/05/2001 | EP1130634A1 Semiconductor device, method for forming silicon oxide film, and apparatus for forming silicon oxide film |
| 09/05/2001 | EP1130389A1 Molecular recognition type chemical CCD sensor |
| 09/05/2001 | EP1129490A1 Thyristors and their manufacture |
| 09/05/2001 | EP1129489A1 Transistor array |
| 09/05/2001 | EP1129488A1 Thin-film transistors and method for producing the same |
| 09/05/2001 | EP1129487A1 High temperature transistor with reduced risk of electromigration |
| 09/05/2001 | EP1129477A1 Salicide process for mosfet integrated circuit |
| 09/05/2001 | EP1129476A1 Method for producing transistors |
| 09/05/2001 | EP1129473A2 Conductive isostructural compounds |
| 09/05/2001 | EP1129328A1 Integral stress isolation apparatus and technique for semiconductor devices |
| 09/05/2001 | EP0928485B1 Two-transistor flash eprom cell |
| 09/05/2001 | CN1311559A Electric motor driving circuit, motor driving method and semiconductor integrated circuit |
| 09/05/2001 | CN1311534A Semiconductor device and its mfg. method |
| 09/05/2001 | CN1311533A Solid camera head |
| 09/05/2001 | CN1311532A Write amplifier/read amplifier having vertical transistor used for DRAM memory |
| 09/05/2001 | CN1311529A Method for mfg. polycrystal silicon capacitor using FET tube and bipolar base pole polycrystal silicon layer |
| 09/05/2001 | CN1070642C Semiconductor memory device and its mfg. method |
| 09/04/2001 | US6285596 Multi-level type nonvolatile semiconductor memory device |
| 09/04/2001 | US6285577 Non-volatile memory using ferroelectric capacitor |
| 09/04/2001 | US6285574 Symmetric segmented memory array architecture |
| 09/04/2001 | US6285269 High-frequency semiconductor device having microwave transmission line being formed by a gate electrode source electrode and a dielectric layer in between |
| 09/04/2001 | US6285082 Soft metal conductor |
| 09/04/2001 | US6285072 Semiconductor device containing a porous structure and method of manufacturing the same |
| 09/04/2001 | US6285060 Barrier accumulation-mode MOSFET |
| 09/04/2001 | US6285059 Structure for laterally diffused metal-oxide semiconductor |
| 09/04/2001 | US6285058 Insulated gate semiconductor device and method of manufacturing the same |
| 09/04/2001 | US6285057 Semiconductor device combining a MOSFET structure and a vertical-channel trench-substrate field effect device |
| 09/04/2001 | US6285056 Conductivity enhanced MOS-gated semiconductor devices |
| 09/04/2001 | US6285055 Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device |
| 09/04/2001 | US6285054 Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings |
| 09/04/2001 | US6285052 Integrated capacitor |
| 09/04/2001 | US6285046 Controllable semiconductor structure with improved switching properties |
| 09/04/2001 | US6285044 InP-based heterojunction bipolar transistor with reduced base-collector capacitance |
| 09/04/2001 | US6285042 Active Matry Display |
| 09/04/2001 | US6285041 Thin-film transistor having a high resistance back channel region am) fabrication method thereof |
| 09/04/2001 | US6284669 Power transistor with silicided gate and contacts |
| 09/04/2001 | US6284663 Method for making field effect devices and capacitors with thin film dielectrics and resulting devices |
| 09/04/2001 | US6284662 Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process |
| 09/04/2001 | US6284637 Forming integrated circuits |
| 09/04/2001 | US6284636 Tungsten gate method and apparatus |
| 09/04/2001 | US6284635 Method for forming titanium polycide gate |
| 09/04/2001 | US6284634 Method for forming metal line in semiconductor device |
| 09/04/2001 | US6284620 Method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components |
| 09/04/2001 | US6284616 Circuit and method for reducing parasitic bipolar effects during electrostatic discharges |
| 09/04/2001 | US6284614 Method of manufacturing semiconductor device in which damage to gate insulating film can be reduced |
| 09/04/2001 | US6284613 Method for forming a T-gate for better salicidation |
| 09/04/2001 | US6284611 Method for salicide process using a titanium nitride barrier layer |
| 09/04/2001 | US6284610 Method to reduce compressive stress in the silicon substrate during silicidation |
| 09/04/2001 | US6284609 Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regions |
| 09/04/2001 | US6284608 Method for making accumulation mode N-channel SOI |
| 09/04/2001 | US6284605 Method for fabricating semiconductor power integrated circuit |
| 09/04/2001 | US6284604 Method for producing a field-effect-controllable, vertical semiconductor component |
| 09/04/2001 | US6284603 Flash memory cell structure with improved channel punch-through characteristics |
| 09/04/2001 | US6284586 Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following masking |
| 09/04/2001 | US6284585 Electronic memory device having bit lines with block selector switches |
| 09/04/2001 | US6284582 MOS-gate tunneling-injection bipolar transistor |
| 09/04/2001 | US6284580 Method for manufacturing a MOS transistor having multi-layered gate oxide |
| 09/04/2001 | US6284579 Drain leakage reduction by indium transient enchanced diffusion (TED) for low power applications |
| 09/04/2001 | US6284578 MOS transistors having dual gates and self-aligned interconnect contact windows |
| 09/04/2001 | US6284577 Overcoating substrate with electroconductive film; activation of argon plasma; anisotropic etching using halide |
| 09/04/2001 | US6284567 Microsensor, and packaging method therefor |
| 09/04/2001 | US6284562 Thin film transistors |
| 08/30/2001 | WO2001063765A1 Power module |
| 08/30/2001 | WO2001063764A1 Power module |
| 08/30/2001 | WO2001063677A1 Mos transistor for high density integration circuits |
| 08/30/2001 | WO2001063676A1 Charge-coupled device as well as a solid-state image pick-up device comprising a charge-coupled device |
| 08/30/2001 | WO2001063675A1 Field effect transistor structure for driving inductive loads |
| 08/30/2001 | WO2001063674A2 Supermolecular structures and devices made from same |
| 08/30/2001 | WO2001026137A3 Three dimensional device integration method and integrated device |
| 08/30/2001 | US20010018662 Assistance method and apparatus |
| 08/30/2001 | US20010018380 Control unit for a motor vehicle |
| 08/30/2001 | US20010018261 Method and apparatus for filling a gap between spaced layers of a semiconductor |
| 08/30/2001 | US20010018260 Semiconductor dynamic quantity-sensor and method of manufacturing the same |
| 08/30/2001 | US20010018259 Method for fabricating conductive line pattern for semiconductor device |
| 08/30/2001 | US20010018255 MOS transistor for high-speed and high-performance operation and manufacturing method thereof |
| 08/30/2001 | US20010018254 Semiconductor device manufacturing method and semiconductor device manufacturing by the same method |
| 08/30/2001 | US20010018246 Methods of forming conductive lines, methods of forming insulative spacers over conductive line sidewalls, methods of forming memory circuitry, and memory circuitry |