Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2001
09/18/2001US6291275 Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
09/18/2001US6291251 Method for fabricating ferroelectric memory
09/18/2001US6291242 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination
09/18/2001US6291085 Zinc oxide films containing P-type dopant and process for preparing same
09/18/2001US6290822 Sputtering high dielectric constant film onto a substrate to incorporate carbon into high dielectric constant film in addition to those elements included in formulation in ambiant gas comprisng argona nd carbon dioxide, removing carbon
09/18/2001US6290414 Method and apparatus for insertion and retainment of pomade within a dispenser
09/13/2001WO2001067570A2 Buried mesa semiconductor device
09/13/2001WO2001067568A1 Quantum well intermixing
09/13/2001WO2001067524A1 Iii nitride compound semiconductor device
09/13/2001WO2001067522A1 Metal-insulator-metal capacitor and a method for producing same
09/13/2001WO2001067521A1 Semiconductor device
09/13/2001WO2001067520A1 Semiconductor device
09/13/2001WO2001067519A1 Low noise and high yield data line structure for imager
09/13/2001WO2001067517A1 Semiconductor device and method of manufacturing the same.
09/13/2001WO2001067516A1 Rapid ramping anneal method for fabricating superlattice materials
09/13/2001WO2001067515A1 Monolithically integrated semiconductor component
09/13/2001WO2001067509A1 Semiconductor device and method of manufacture thereof
09/13/2001WO2001067498A1 Method for producing a field effect transistor with side wall oxidation
09/13/2001WO2001067497A1 Quantum well intermixing
09/13/2001WO2001067490A2 Single tunnel gate oxidation process for fabricating nand flash memory
09/13/2001WO2001067169A1 Electrooptical device and electronic device
09/13/2001WO2001066834A2 Chemical vapor deposition process for fabricating layered superlattice materials
09/13/2001WO2001066832A2 Graded thin films
09/13/2001WO2001038222A8 Silicon nanoparticle and method for producing the same
09/13/2001WO2001008226A3 Cellular trench-gate field-effect transistors
09/13/2001US20010021589 Forming a layer of suboxide material comprising hafnium, zirconium, lanthanum, scandium or cerium silicates on a semiconductor substrate and forming a structure on the suboxide; transistors
09/13/2001US20010021577 Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
09/13/2001US20010021575 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe
09/13/2001US20010021567 Method of forming device isolation structure
09/13/2001US20010021566 Anodic oxidization methods
09/13/2001US20010021564 Method for fabricating dielectric capacitor
09/13/2001US20010021561 Non-volatile memory device and fabrication method thereof
09/13/2001US20010021559 Integrated circuit, components thereof and manufacturing method
09/13/2001US20010021551 Process for manufacturing semiconductor integrated circuit device
09/13/2001US20010021549 Methods of enhancing data retention of a floating gate transistor, methods of forming floating gate transistors, and floating gate transistors
09/13/2001US20010021544 Semiconductor device and manufacturing method thereof
09/13/2001US20010021543 Integrated component, composite element comprising an integrated component and a conductor structure, chip card, and method of producing the integrated component
09/13/2001US20010021539 Process for formation of cap layer for semiconductor
09/13/2001US20010021133 Method for manufacturing non-volatile semiconductor memory and non-volatile semiconductor memory manufactured thereby
09/13/2001US20010020732 Vertical semiconductor component having a reduced electrical surface field
09/13/2001US20010020730 Integrated circuit configuration, method for producing it, and wafer including integrated circuit configurations
09/13/2001US20010020729 Semiconductor device having bent gate electrode and process for production thereof
09/13/2001US20010020726 Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
09/13/2001US20010020725 Structure and method for a large-permittivity gate using a germanium layer
09/13/2001US20010020723 Transistor having a transition metal oxide gate dielectric and method of making same
09/13/2001US20010020722 Step-like silicon on isolation structure
09/13/2001US20010020720 Field-effect semiconductor devices
09/13/2001US20010020719 Insulated gate bipolar transistor
09/13/2001US20010020718 Semiconductor integrated circuit device and a method of manufacturing thereof
09/13/2001US20010020717 Apparatus and method for container floating gate cell
09/13/2001US20010020716 High density memory cell assembly and methods
09/13/2001US20010020707 Semiconductor device and method for fabricating the same
09/13/2001US20010020704 Diode
09/13/2001US20010020702 Semiconductor device, display device and method of fabricating the same
09/13/2001US20010020700 Semiconductor device
09/13/2001US20010020694 Sensor measuring high pressure, high stresses; dielectric matrix containing piezoelectricity material
09/13/2001US20010020485 Silicon thin-film, integrated solar cell,module, and methods of manufacturing the same
09/13/2001US20010020408 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions
09/13/2001EP1145326A3 Cellular trench-gate field-effect transistors
09/13/2001DE4242669C2 Halbleiteranordnung mit einem vertikalen Halbleiterleistungsschalter und einer integrierten Schaltung A semiconductor device comprising a vertical power semiconductor switch and of an integrated circuit
09/13/2001DE10107012A1 Simultaneous formation of poly-poly capacitor, MOS transistor and bipolar transistor on substrate used in production of integrated circuits comprises using polycrystalline silicon to form electrodes
09/13/2001DE10054964A1 Acceleration sensor for e.g. airbag system, antilock braking system, navigation system in motor vehicle has acceleration detection chip that is arranged in through hole of signal processing chip
09/13/2001DE10051644A1 Semiconductor device has semiconductor substrate with two surfaces on which two P layers are formed without contacting each other respectively
09/13/2001DE10009347A1 Semiconductor device e.g. IGBT
09/13/2001DE10008572A1 Power semiconductor module for e.g. vehicular and industrial controls, contains substrate with sleeves connected to it, to grip pins making electrical connection with circuit board
09/13/2001DE10008570A1 Semiconductor device with compensation structure e.g. vertical FET
09/13/2001DE10008002A1 Split gate flash memory element arrangement has memory element in p-trough with shallower diffusion depth than n-trough, arranged in n-trough with no electrical contact to substrate
09/13/2001DE10004983C1 Schutzanordnung für Schottky-Diode Protection order for Schottky diode
09/13/2001CA2398359A1 Quantum well intermixing
09/13/2001CA2398301A1 Quantum well intermixing
09/12/2001EP1132973A1 Metal-insulator-metal capacitor and process for making the same
09/12/2001EP1132972A1 Negative resistance limiter device
09/12/2001EP1132971A2 Electrostatic discharge protection transistor
09/12/2001EP1132970A2 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same
09/12/2001EP1132969A2 Semiconductor device
09/12/2001EP1132960A2 Semiconductor device and manufacturing method thereof
09/12/2001EP1132954A2 Process for forming a silicon-germanium base of a heterojunction bipolar transistor
09/12/2001EP1132951A1 Process of cleaning silicon prior to formation of the gate oxide
09/12/2001EP1132765A2 Liquid crystal device
09/12/2001EP1131852A1 Semiconductor component with dielectric or semi-insulating shielding structures
09/12/2001EP1131850A2 Method for dicing mesa-diodes
09/12/2001EP1131849A2 Pseudomorphic high electron mobility transistors
09/12/2001EP1131848A1 Method for producing a power semiconductor device with a stop zone
09/12/2001EP1131842A2 High-efficiency heterostructure thermionic coolers
09/12/2001EP0898808A4 Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
09/12/2001EP0842538B1 Method for making a flat screen active matrix
09/12/2001CN2447941Y Button-type rectifier diode with improved structure
09/12/2001CN1312958A An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
09/12/2001CN1312955A Integrated circuit laying-out structure comprising vertical transistors and method for production thereof
09/12/2001CN1312591A Semiconductor device, liquid crystal display device and producing method thereof
09/12/2001CN1312589A Semiconductor and producing method thereof
09/12/2001CN1312588A Semiconductor storage device, its driving method and producing method
09/12/2001CN1312587A Semiconductor circuit for electronic optical device and producing method
09/12/2001CN1071032C Camara with internal supporting structure for preventing red-eye light
09/11/2001US6288949 Semiconductor memory device including an SOI substrate
09/11/2001US6288943 Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gate
09/11/2001US6288942 Nonvolatile semiconductor storage device and its manufacturing method
09/11/2001US6288938 Flash memory architecture and method of operation
09/11/2001US6288935 Nonvolatile semiconductor memory device for storing multivalued data
09/11/2001US6288597 Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same