| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/27/2001 | US20010023961 Trench DMOS transistor having a double gate structure |
| 09/27/2001 | US20010023960 Method for manufacturing semiconductor device and insulated gate type power transistor |
| 09/27/2001 | US20010023959 Vertical MOS transistor and method of manufacturing the same |
| 09/27/2001 | US20010023957 Trench-gate semiconductor devices |
| 09/27/2001 | US20010023947 Ultra high speed heterojunction bipolar transistor having a cantilevered base |
| 09/27/2001 | US20010023945 Semi-insulating silicon carbide without vanadium domination |
| 09/27/2001 | US20010023943 Quantum computing method using josephson junctions between s-wave and d-wave superconductors |
| 09/27/2001 | US20010023942 Semiconductor device of heterojunction structure having quantum dot buffer layer |
| 09/27/2001 | US20010023771 Metal line, method for fabricating the metal line, thin film transistor employing the metal line and display device |
| 09/27/2001 | DE10023871C1 Field effect transistor comprises an electrically non-conducting substrate, a channel region between source and drain regions, and a gate region for controlling the channel region |
| 09/27/2001 | DE10023101C1 Bipolar transistor for analogue applications has further region with same doping type as base region adjacent collector region |
| 09/27/2001 | DE10013904A1 Micromechanical pressure sensor has compensation resistors connected to measurement resistor for hysteresis compensation |
| 09/27/2001 | DE10012866A1 Resistor made of semiconductor material |
| 09/27/2001 | DE10012610A1 Vertical high voltage semiconductor device |
| 09/27/2001 | DE10012112A1 Bar-type field effect transistor (FET) used in electronic devices comprises a bar formed on a substrate, and a gate and a spacer formed over part of the bar |
| 09/27/2001 | DE10001128C1 Semiconducting component developed to considerably reduce collector-emitter voltage for forward conduction at rated current without reducing breakdown voltage - has first doping region with intermediate region dividing it into rear, front parts and designed to lead to considerable increase in minority carrier density in first part |
| 09/26/2001 | EP1137182A2 Semiconductor device for controlling semiconductor power switches |
| 09/26/2001 | EP1137158A1 AC switch device used for switching AC circuit and AC switch circuit having the AC switch device |
| 09/26/2001 | EP1137074A2 Power field effect transistor |
| 09/26/2001 | EP1137073A1 Heterojunction bipolar transistor having a T-shaped emitter contact and method of making the same |
| 09/26/2001 | EP1137072A2 Semiconductor device comprising a group III / nitride material and method of fabricating the same |
| 09/26/2001 | EP1137071A2 Fast-dump structure for full-frame image sensors with lateral overflow drain antiblooming structures |
| 09/26/2001 | EP1137070A2 Fast line dump structure for solid state image sensor |
| 09/26/2001 | EP1137068A2 Power semiconductor device having a protection circuit |
| 09/26/2001 | EP1137062A1 Method for forming an isolation region |
| 09/26/2001 | EP1137059A1 Semiconductor device, method for making the same and method for making electrical contacts between separated circuit elements |
| 09/26/2001 | EP1137055A1 Method for manufacturing a high-frequency semiconductor structure and high-frequency semiconductor structure |
| 09/26/2001 | EP1136920A2 Electric characteristic evaluating apparatus for a semiconductor device |
| 09/26/2001 | EP1135808A1 Power semiconductor and a corresponding production method |
| 09/26/2001 | EP1135806A1 Controllable semiconductor element with a gate series resistor |
| 09/26/2001 | EP1135805A1 Insulated channel field effect transistor with an electric field terminal region |
| 09/26/2001 | EP1135798A2 Method of making shallow junction semiconductor devices |
| 09/26/2001 | EP1135796A1 Process for forming a sion/teos interlevel dielectric with after-treatment of the cvd silicium oxynitride layer |
| 09/26/2001 | EP0916138B1 Method of operating a storage cell arrangement |
| 09/26/2001 | EP0847059B1 Semiconductor memory |
| 09/26/2001 | EP0806057B1 Mos transistor |
| 09/26/2001 | EP0763256B1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT |
| 09/26/2001 | EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials |
| 09/26/2001 | CN1314715A Semiconductor device and its producing method |
| 09/26/2001 | CN1314714A Vertical metal-oxide-semiconductor transistor |
| 09/26/2001 | CN1314713A Vertical metal-oxide-semiconductor transistor and its producing method |
| 09/26/2001 | CN1314712A Semiconductor device and its producing method |
| 09/26/2001 | CN1314608A Electrooptics device |
| 09/25/2001 | US6295630 Method and apparatus for measuring an overlap length of MISFET, and a recording medium and a device model each carrying an extraction program for determining the overlap length |
| 09/25/2001 | US6295227 Non-volatile semiconductor memory device |
| 09/25/2001 | US6295142 Semiconductor apparatus and method for producing it |
| 09/25/2001 | US6294909 Electro-magnetic lithographic alignment method |
| 09/25/2001 | US6294820 Metallic oxide gate electrode stack having a metallic gate dielectric metallic gate electrode and a metallic arc layer |
| 09/25/2001 | US6294819 CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET |
| 09/25/2001 | US6294818 Parallel-stripe type semiconductor device |
| 09/25/2001 | US6294817 Source/drain-on insulator (S/DOI) field effect transistor using oxidized amorphous silicon and method of fabrication |
| 09/25/2001 | US6294815 Semiconductor device |
| 09/25/2001 | US6294813 Information handling system having improved floating gate tunneling devices |
| 09/25/2001 | US6294811 Two transistor EEPROM cell |
| 09/25/2001 | US6294808 Non-volatile memory cell with field-enhancing floating gate and method for forming the same |
| 09/25/2001 | US6294805 Ferroelectric memory devices including capacitors located outside the active area and made with diffusion barrier layers |
| 09/25/2001 | US6294804 GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal |
| 09/25/2001 | US6294803 Semiconductor device having trench with vertically formed field oxide |
| 09/25/2001 | US6294802 Field effect transistor and method of manufacturing the same |
| 09/25/2001 | US6294801 Semiconductor device with Schottky layer |
| 09/25/2001 | US6294799 Semiconductor device and method of fabricating same |
| 09/25/2001 | US6294797 MOSFET with an elevated source/drain |
| 09/25/2001 | US6294796 Thin film transistors and active matrices including same |
| 09/25/2001 | US6294794 Non-linear optical device using quantum dots |
| 09/25/2001 | US6294481 Semiconductor device and method for manufacturing the same |
| 09/25/2001 | US6294446 Methods of manufacturing a high electron mobility transistor with a T-shaped gate electrode |
| 09/25/2001 | US6294445 Single mask process for manufacture of fast recovery diode |
| 09/25/2001 | US6294441 Method of manufacturing a semiconductor device |
| 09/25/2001 | US6294433 Gate re-masking for deeper source/drain co-implantation processes |
| 09/25/2001 | US6294432 Super halo implant combined with offset spacer process |
| 09/25/2001 | US6294430 Nitridization of the pre-ddi screen oxide |
| 09/25/2001 | US6294429 Method of forming a point on a floating gate for electron injection |
| 09/25/2001 | US6294427 Non-volatile semiconductor memory device and fabrication method thereof |
| 09/25/2001 | US6294418 Circuits and methods using vertical complementary transistors |
| 09/25/2001 | US6294414 Method of fabricating heterointerface devices having diffused junctions |
| 09/25/2001 | US6294401 Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same |
| 09/25/2001 | US6294400 Method for making micro-mechanical semiconductor accelerometer |
| 09/25/2001 | US6294399 Quantum thin line producing method and semiconductor device |
| 09/25/2001 | US6294274 Contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 ev. |
| 09/25/2001 | US6294219 Method of annealing large area glass substrates |
| 09/25/2001 | US6294133 Multiple detecting apparatus for physical phenomenon and/or chemical phenomenon |
| 09/25/2001 | US6294019 Method of making group III-V compound semiconductor wafer |
| 09/20/2001 | WO2001069686A1 Bar-type field effect transistor and method for the production thereof |
| 09/20/2001 | WO2001069685A2 Trench-gate semiconductor devices |
| 09/20/2001 | WO2001069684A2 Field-effect semiconductor devices |
| 09/20/2001 | WO2001069682A2 Vertical high-voltage semiconductor component |
| 09/20/2001 | WO2001069673A1 Flash memory device and method for manufacturing the same, and method for forming dielectric film |
| 09/20/2001 | WO2001069668A1 Method of manufacturing source/drain regions having a deep junction |
| 09/20/2001 | WO2001069667A1 Method for producing electrical connections in a semiconductor component |
| 09/20/2001 | WO2001069665A1 Method for forming dielectric film |
| 09/20/2001 | WO2001069657A2 Thermal diode for energy conversion |
| 09/20/2001 | WO2001069655A2 Spin transistor |
| 09/20/2001 | WO2001069654A2 Semiconductor device with light shield and corresponding etching method |
| 09/20/2001 | WO2001069607A2 Memory cell, method of formation, and operation |
| 09/20/2001 | WO2001069228A2 Mis hydrogen sensors |
| 09/20/2001 | US20010023133 Double recessed transistor |
| 09/20/2001 | US20010023124 Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device |
| 09/20/2001 | US20010023120 Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof |
| 09/20/2001 | US20010023116 Method for setting the threshold voltage of a MOS transistor |
| 09/20/2001 | US20010023115 Lower temperature method for forming high quality silicon-nitrogen dielectrics |